# Silicon Carbide Schottky Diode, thinQ Gen V Series, Single, 650 V, 10 A, 15 nC, TO-263 (D2PAK)
**URL**: https://novapart.co/products/IDK10G65C5XTMA2/silicon-carbide-schottky-diode-thinq-gen-v-series
**SKU**: IDK10G65C5XTMA2
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €1.3000
**Stock**: 500+
**Lead Time**: 358 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3 Pin |
| Product Range | thinQ Gen V Series |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | TO-263 (D2PAK) |
| Diode Configuration | Single |
| Average Forward Current | 10A |
| Total Capacitive Charge | 15nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3625458RL/)
## SiC
Silicon Carbide Diode
5[th] Generation thinQ![TM] 650V SiC Schottky Diode IDK10G65C5
## Final Data Sheet
Rev. 2.0, 2013-07-20
> [Power Management & Multimarket ] eee
## Gafineon
## **5[th] Generation thinQ!™ SiC Schottky Diode**
## **IDK10G65C5**
## **1 Description**
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.
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1
2
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## **Features**
- Revolutionary semiconductor material - Silicon Carbide
- Benchmark switching behavior
- No reverse recovery/ No forward recovery
- Temperature independent switching behavior
- High surge current capability
- Pb-free lead plating; RoHS compliant
- Qualified according to JEDEC[1)] for target applications
- Breakdown voltage tested at 22 mA[2)]
- Optimized for high temperature operation
## **Benefits**
- System efficiency improvement over Si diodes
- System cost / size savings due to reduced cooling requirements
- Enabling higher frequency / increased power density solutions
- Higher system reliability due to lower operating temperatures
- Reduced EMI
## **Applications**
- Switch mode power supply
- Power factor correction
- Solar inverter
- Uninterruptible power supply
## **Table 1 Key Performance Parameters**
|**Parameter**|**Value**|**Unit**|
|---|---|---|
|_VDC_|650|V|
|_QC_;_V_R=400V|15|nC|
|_EC_;_V_R=400V|3.5|µJ|
|_IF @ T_C< 140°C|10|A|
**Table 2 Pin Definition Pin 1 Pin 2 Pin 3** ~~—~~ C A n.a.
**Type / ordering Code Package Marking Related links** ~~ee~~ IDK10G65C5 PG-TO263-2 D1065C5 www.infineon.com/sic
1) J-STD20 and JESD22 2) All devices tested under avalanche conditions for a time periode of 10ms
Final Data Sheet
2
Rev. 2.0, 2013-07-20
**5[th] Generation thinQ![TM] SiC Schottky Diode IDK10G65C5**
## **Table of contents**
## **Table of Contents**
|**1**|**Description .......................................................................................................................................... 2**|
|---|---|
|**2**|**Maximum ratings ................................................................................................................................ 4**|
|**3**|**Thermal characteristics ..................................................................................................................... 4**|
|**4**|**Electrical characteristics ................................................................................................................... 5**|
|**5**|**Electrical characteristics diagrams .................................................................................................. 6**|
|**6**|**Simplified Forward Characteristics Model ...................................................................................... 8**|
|**7**|**Package outlines ................................................................................................................................ 9**|
|**8**|**Revision History ............................................................................................................................... 10**|
Final Data Sheet
3
Rev. 2.0, 2013-07-20
**5[th] Generation thinQ![TM] SiC Schottky Diode IDK10G65C5**
## **Maximum ratings**
## **2 Maximum ratings**
|**Table 3**
**Maximum ratings**|**Table 3**
**Maximum ratings**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/Test Condition**|
|||**Min.**|**Typ. **|**Max.**|||
|Continuous forward current|_I_F|–|–|10|A|_T_C< 140°C,D=1|
|Surge non-repetitive forward current,
sine halfwave|
_I_F,SM|–|–|82||_TC_= 25°C, _t_p=10 ms|
|||–|–|71||_T_C= 150°C, _t_p=10 ms|
|Non-repetitivepeak forward current|_I_F,max|–|–|431||_T_C= 25°C, _t_p=10µs|
|i²t value|_∫ i²dt_|–|–|34|A²s|_TC_= 25°C, _t_p=10 ms|
|||–|–|25||_T_C= 150°C, _t_p=10 ms|
|Repetitivepeak reverse voltage|_V_RRM|–|–|650|V|_Tj_= 25°C|
|Diode dv/dt ruggedness|_dv/dt_|–|–|100|V/ns|_V_R=0..480 V|
|Power dissipation|_P_tot|–|–|89|W|_TC_= 25°C|
|Operatingand storage temperature|_T_j_;T_stg|-55|–|175|°C||
|Mountingtorque||–|–|60|Ncm|M2.5 screws|
## **3 Thermal characteristics**
|**Table 4**
**Thermal characteristics TO-263-2 **|**Table 4**
**Thermal characteristics TO-263-2 **|**Table 4**
**Thermal characteristics TO-263-2 **|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/Test Condition**|
|||**Min.**|**Typ. **|**Max.**|||
|Thermal resistance, junction-case|_R_thJC|–|1.0|1.7|K/W||
|Thermal resistance, junction-
ambient1)|_R_thJA|–|–|62||SMD version, device on
PCB,minimal footprint|
||||35|||SMD version, device on
PCB,6cm² coolingarea|
1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection, PCB is vertical without air stream cooling.
Final Data Sheet
Rev. 2.0, 2013-07-20
4
**5[th] Generation thinQ![TM] SiC Schottky Diode IDK10G65C5**
## **Electrical characteristics**
## **4 Electrical characteristics**
|**Table 5**
**Static characteristics**|**Table 5**
**Static characteristics**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/Test Condition**|
|||**Min.**|**Typ. **|**Max.**|||
|DC blockingvoltage|_V_DC|650|–|–|V|_I_R= 1.7 mA, _T_j=25°C|
|Diode forward voltage|_V_F|–|1.5|1.8||_I_F= 10 A, _T_j=25°C|
|||–|1.8|2.2||_I_F= 10 A, _T_j=150°C|
|Reverse current|_I_R|–|0.5|1700|µA|_V_R=650 V, _T_j=25°C|
|||–|0.13|440||_V_R=600 V, _T_j=25°C|
|||–|2.0|6500||_V_R=650 V, _T_j=150°C|
|**Table 6**
**AC characteristics**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/Test Condition**|
|||**Min.**|**Typ. **|**Max.**|||
|Total capacitive charge|_Q_c|–|15||nC|_V_R=400 V,_di/dt_=200A/µs,
_I_F≤_I_F,MAX, _T_j=150°C.|
|Total Capacitance|_C_|–|300|–|pF|_V_R=1 V, _f_=1 MHz|
|||–|40|–||_V_R=300 V, _f_=1 MHz|
|||–|39|–||_V_R=600 V, _f_=1 MHz|
Final Data Sheet
Rev. 2.0, 2013-07-20
5
**5[th] Generation thinQ![TM] SiC Schottky Diode IDK10G65C5**
## **Electrical characteristics diagrams**
## **5 Electrical characteristics diagrams**
## **Table 7**
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Power dissipation Diode forward current
100
100
0.1
90 90 0.3
0.5
80
80
0.7
70 70 1
60
60
50 50
40 40
30 30
20 20
10 10
0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC[°C] TC[°C]
P tot=f( T C); R thJC,max I F=f( T C); T j≤175°C; R thJC,max; parameter D =duty cycle
[W]
P tot [A] I F
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**Table 8**
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Typical forward characteristics Typical forward characteristics in surge current
20 100
-55°C
18 90
25°C
16 80
-55°C
14 100°C 70
25°C
12 60
150°C 100°C
10 50
175°C
8
40
6
30
4
20
150°C
2
10
175°C
0
0
0 0.5 1 1.5 2 2.5 3
0 1 2 3 4 5 6
V F [V] V F [V]
I F=f( V F); tp=200 µs; parameter: T j I F=f( V F); tp=200 µs; parameter: T j
[A] [A]
I F I F
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Final Data Sheet
6
Rev. 2.0, 2013-07-20
## **5[th] Generation thinQ![TM] SiC Schottky Diode IDK10G65C5**
## **Electrical characteristics diagrams**
## **Table 9**
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Typ. capacitance charge vs. current slope [1)]
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Typ. reverse current vs. reverse voltage
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16 1.E-5
14
12 1.E-6
10
8 1.E-7 175°C
6 150°C
4 1.E-8 100°C
-55°C
2 25°C
0 1.E-9
100 400 700 1000 100 200 300 400 500 600
dIF/dt [A/µs] V R [V]
Q C=f(diF/dt); T j=150°C; V R=400 V; I F≤ I F,max I R=f( V R); parameter: T j
[A]
I R
Qc [nC]
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1) Only capacitive charge, guaranteed by design.
## **Table 10**
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Max. transient thermal impedance Typ. capacitance vs. reverse voltage
400
350
1
300
250
0.5
0.2 200
0.1
0.1
0.05 150
0.02
0.01 100
single pulse
50
0.01 0
1.E-06 1.E-03 1.E+00 0 1 10 100 1000
t p [s] V R [V]
Zth,jc =f( t P); parameter: D= t P/ T ; C= f( V R); T j=25°C; f =1 MHz
[K/W]
th,jc [pF]
Z C
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Final Data Sheet
Rev. 2.0, 2013-07-20
7
**5[th] Generation thinQ![TM] SiC Schottky Diode IDK10G65C5**
## **Electrical characteristics diagrams**
## **Table 11**
## **Typ. capacitance stored energy**
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9
8
7
6
5
4
3
2
1
0
0 200 400 600
V R [V]
E C=f( V R)
[µJ]
C
E
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## **6 Simplified Forward Characteristics Model**
## **Table 12**
**Equivalent forward current curve Mathematical Equation** _V_ _V_ _R_ _I F TH DIFF F VTH_ _T j_ .0001 _T j_ .104 V _RDIFF_ _T j_ 1.29 10-6 _T j_ 2 1.29 10-4 _T j_ 0.047 **1/R diff V th** _**V**_ **F [V]** _V_ F=f( _I_ F) _T_ j in °C; -55°C < _T_ j < 175°C; _I_ F < 20 A
Final Data Sheet
8
Rev. 2.0, 2013-07-20
**5[th] Generation thinQ![TM] SiC Schottky Diode IDK10G65C5**
## Cnfineon
## **Package outlines**
**7**
## **Package outlines**
**Figure 1 Outlines TO-263, dimensions in mm/inches**
Final Data Sheet
9
Rev. 2.0, 2013-07-20
**5[th] Generation thinQ![TM] SiC Schottky Diode IDK10G65C5**
## Gafineon
## **Revision History**
## **8 Revision History**
## **5** ~~**[th]**~~ **Generation thinQ!** ~~**[TM]**~~ **SiC Schottky Diode**
**Revision History: 2013-07-20, Rev. 2.0**
**Previous Revision:**
|**Revision**|**Subjects(major changes since last version)**|
|---|---|
|2.0|Release of final data sheet|
## **We Listen to Your Comments**
Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to: **erratum@infineon.com** Edition 2013-07-20
Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved.
## **Legal Disclaimer**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
## **Information**
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( **www.infineon.com** ).
## **Warnings**
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Final Data Sheet
10
Rev. 2.0, 2013-07-20
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
## Links
- [View this product on Novapart](https://novapart.co/products/IDK10G65C5XTMA2/silicon-carbide-schottky-diode-thinq-gen-v-series)
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- [Supplier page](https://es.farnell.com/infineon/idk10g65c5xtma2/sic-diode-650v-10a-to-263/dp/3625458RL)
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