# Silicon Carbide Schottky Diode, CoolSiC 5G Series, Single, 1.2 kV, 22.8 A, 28 nC, TO-263 (D2PAK)

![Product image](https://novapart.co/image/farnell:3577323RL/)

**URL**: https://novapart.co/products/IDK08G120C5XTMA1/silicon-carbide-schottky-diode-coolsic-5g-series
**SKU**: IDK08G120C5XTMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €1.7600
**Stock**: 1000+
**Lead Time**: 218 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3 Pin |
| Product Range | CoolSiC 5G Series |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | TO-263 (D2PAK) |
| Diode Configuration | Single |
| Average Forward Current | 22.8A |
| Total Capacitive Charge | 28nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 1.2kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3577323RL/)

**IDK08G120C5** 

## **5[th] Generation CoolSiC[TM] 1200V Schottky Diode** 

## **SiC Diode** 

## **Features** 

- Revolutionary semiconductor material - Silicon Carbide 

- No reverse recovery current / no forward recovery 

- Temperature independent switching behaviour 

- Low forward voltage even at high operating temperature 

- Tight forward voltage distribution 

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- Excellent thermal performance 

- Extended surge current capability 

- Specified dv/dt ruggedness 

- Pb-free lead plating; RoHS compliant 

**Pin definition** | 1 Pin 1 and backside: Cathode CASE Pin 2: Anode 2 ~~=~~ 

## **Potential applications** 

- Drives 

- Industrial power supplies: Industrial UPS 

- Solar central inverters and Solar string inverter 

## **Product validation** 

- Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22 

## **Description** 

- System efficiency improvement over Si diodes 

- Enabling higher frequency / increased power density solutions 

- System size/cost savings due to reduced heatsink requirements and smaller magnetics 

- Reduced EMI 

- Highest efficiency across the entire load range 

- Robust diode operation during surge events 

- High reliability 

- Related Links: www.infineon.com/SiC 

**Key performance parameters** 

**Type** _**V**_ **DC** _**I**_ **F** _**Q**_ **C Tvj,max Marking Package** IDK08G120C5 1200 V 8 A 28nC 175°C D8512C5 PG-TO263-2 ~~i —~~ 

Please read the Important Notice and Warnings at the end of this document page 1 of 12 

Datasheet **www.infineon.com** 

V 2.0 2019-10-28 

**5[th] Generation CoolSiC[TM] 1200V Schottky Diode SiC Diode Table of contents** 

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## **Table of contents** 

|**Features ........................................................................................................................................ 1**|
|---|
|**Potential applications ..................................................................................................................... 1**|
|**Product validation .......................................................................................................................... 1**|
|**Description .................................................................................................................................... 1**|
|**Key performance parameters ........................................................................................................... 1**|
|**Table of contents ............................................................................................................................ 2**|
|**1**<br>**Maximum ratings ................................................................................................................... 3**|
|**2**<br>**Thermal resistances ............................................................................................................... 5**|
|**3**<br>**Electrical Characteristics ........................................................................................................ 6**|
|**4**<br>**Electrical Characteristics Diagrams .......................................................................................... 7**|
|**5**<br>**Package Drawing .................................................................................................................. 10**|
|**Revision history............................................................................................................................. 11**|



Please read the Important Notice and Warnings at the end of this document page 2 of 12 

Datasheet 

V 2.0 2019-10-28 

**www.infineon.com** 

**5[th] Generation CoolSiC[TM] 1200V Schottky Diode SiC Diode** 

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## **Maximum ratings** 

## **1 Maximum ratings** 

_Note: For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet._ 

|**Parameter**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Repetitive peak reverse voltage<br>_T_C ≥25°C|_V_RRM|1200|V|
|Continuous forward current for Rth(j-c,max)<br>_T_C= 161°C, D=1<br>_T_C= 135°C, D=1<br>_T_C= 25°C, D=1|_I_F|8.0<br>11.0<br>22.8|A|
|Surge repetitive forward current, sine halfwave1<br>_T_C=25°C, tp=10ms<br>_T_C=100°C, tp=10ms|_IF,RM_|32<br>24|A|
|Surge non-repetitive forward current, sine halfwave<br>_T_C=25°C, tp=10ms<br>_T_C=150°C, tp=10ms|_I_F,SM|70<br>60|A|
|Non-repetitive peak forward current<br>_T_C= 25°C,_t_p=10 µs|_I_F,max|530|A|
|i²t value<br>_T_C= 25°C,_t_p=10 ms<br>_T_C= 150°C,_t_p=10 ms|_∫ i²dt_|25<br>18|A²s|
|Diode d_v_/d_t_ruggedness<br>_V_R=0...960 V|d_v_/d_t_|80|V/ns|
|Power dissipation for Rth(j-c,max)<br>_T_C= 25°C|_P_tot|126|W|



> 1 Not subject to production test. The test was performed with 20000 pulses (two consecutive half-wave rectified sines with 10 ms period). 

Please read the Important Notice and Warnings at the end of this document 

Datasheet 

V 2.0 

**www.infineon.com** 

page 3 of 12 

2019-10-28 

## **5[th] Generation CoolSiC[TM] 1200V Schottky Diode SiC Diode** 

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## **Maximum ratings** 

|**SiC Diode**<br>**Maximum ratings**||||
|---|---|---|---|
|Operating temperature|_T_vj|-55…175|°C|
|Storage temperature|_T_stg|-55…150|°C|
|Soldering temperature, reflow soldering (MSL1<br>according to JEDEC J-STD-020)|_T_sold|260|°C|



Please read the Important Notice and Warnings at the end of this document page 4 of 12 

Datasheet 

V 2.0 

**www.infineon.com** 

2019-10-28 

## **5[th] Generation CoolSiC[TM] 1200V Schottky Diode SiC Diode Thermal resistances** 

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## **2 Thermal resistances** 

|**Parameter**|**Symbol**|**Conditions**|**Value**|||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**Characteristic**|||||||
|Diode thermal resistance,<br>junction – case|Rth(j-c)||-|0.92|1.19|K/W|
|Thermal resistance,<br>junction – ambient|Rth(j-a)|Leaded|-|-|62|K/W|



Please read the Important Notice and Warnings at the end of this document page 5 of 12 

Datasheet 

V 2.0 

**www.infineon.com** 

2019-10-28 

**5[th] Generation CoolSiC[TM] 1200V Schottky Diode SiC Diode Electrical Characteristics** 

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## **3 Electrical Characteristics** 

## **Static Characteristics, at Tvj=25°C, unless otherwise specified** 

|**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|DC blocking voltage|_V_DC|_T_vj= 25°C, IR=50µA|1200|-|-|V|
|Diode forward voltage|_V_F|_I_F= 8A,_Tvj_=25°C<br>_I_F= 8A,_Tvj_=150°C|-<br>-|1.65<br>2.25|1.95<br>-|V|
|Reverse current|_I_R|_V_R=1200V,_T_vj=25°C<br>_V_R=1200V,_T_vj=150°C||3<br>14|40<br>-|µA|



## **Dynamic Characteristics, at Tvj=25°C, unless otherwise specified** 

|**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|Total capacitive charge|_Q_C|_V_R= 800V,_T_vj=150°C<br><br><br>_R_<br>_V_<br>_C_<br>_dV_<br>_V_<br>_C_<br>_Q_<br>0<br>)<br>(|-|28|-|nC|
|Total Capacitance|_C_|_V_R=1 V,_f_=1 MHz<br>_V_R=400 V,_f_=1 MHz<br>_V_R=800 V,_f_=1 MHz|-<br>-<br>-|365<br>26<br>20|-<br>-<br>-|pF|



Please read the Important Notice and Warnings at the end of this document page 6 of 12 

Datasheet 

V 2.0 

**www.infineon.com** 

2019-10-28 

**5[th] Generation CoolSiC[TM] 1200V Schottky Diode SiC Diode Electrical Characteristics Diagrams** 

## **4 Electrical Characteristics Diagrams** 

**Figure 1. Power dissipation as function of case temperature, Ptot=f(TC), Rth(j-c),max** 

**Figure 2. Diode forward current as function of temperature, parameter:** _**T**_ **vj≤175°C, Rth(j-c),max,** _**D**_ **=duty cycle, Vth,** _**R**_ **diff @** _**T**_ **vj=175°C** 

**Figure 3. Typical forward characteristics,** _**I**_ **F=f(** _**V**_ **F),** _**t**_ **p= 10 µs, parameter:** _**T**_ **vj** 

**Figure 4. Typical forward characteristics in surge current,** _**I**_ **F=f(** _**V**_ **F),** _**t**_ **p= 10 µs, parameter:** _**T**_ **vj** 

Please read the Important Notice and Warnings at the end of this document page 7 of 12 

Datasheet 

V 2.0 

**www.infineon.com** 

2019-10-28 

## **5[th] Generation CoolSiC[TM] 1200V Schottky Diode SiC Diode Electrical Characteristics Diagrams** 

**Figure 5. Typical capacitive charge as function of current slope,** _**Q**_ **C=f(** _**dI**_ **F/** _**dt**_ **),** _**T**_ **vj=150°C** 

**Figure 6. Typical reverse characteristics,** _**I**_ **R=f(** _**V**_ **R), parameter:** _**T**_ **vj** 

**Figure 7. Max. transient thermal impedance, Zth,j-c=f(tP), parameter: D=tP/T** 

**Figure 8. Typical capacitance as function of reverse voltage, C=f(VR); Tvj=25°C; f=1 MHz** 

Please read the Important Notice and Warnings at the end of this document page 8 of 12 

Datasheet **www.infineon.com** 

V 2.0 

2019-10-28 

## **5[th] Generation CoolSiC[TM] 1200V Schottky Diode SiC Diode Electrical Characteristics Diagrams** 

**Figure 9. Typical capacitively stored energy as function of reverse voltage,** _**E**_ **C=f(** _**V**_ **R)** 

Please read the Important Notice and Warnings at the end of this document page 9 of 12 

Datasheet **www.infineon.com** 

V 2.0 

2019-10-28 

**5[th] Generation CoolSiC[TM] 1200V Schottky Diode SiC Diode** 

## **Package Drawing** 

## **5 Package Drawing** 

## **PG-TO263-2** 

- 1) Typical 

Metal surface min. X = 7.25, y = 6.9 All metal surfaces: tin plated, except area of cut 

All dimensions do not include mold flash or protrusions All dimensions are in units mm 

> The drawings is in complicance with ISO 128-30, Projection Method 1 [ ~~ao~~ ] 

Please read the Important Notice and Warnings at the end of this document page 10 of 12 

Datasheet 

V 2.0 

**www.infineon.com** 

2019-10-28 

## **5[th] Generation CoolSiC[TM] 1200V Schottky Diode SiC-Diode Revision history** 

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## **Revision history** 

|**Document**<br>**version**|**Date of release**|**Description of changes**|
|---|---|---|
|V 1.0|2019-01-25|PreliminaryDatasheet|
|V 2.0|2019-10-28|Final Datasheet|
||||



Please read the Important Notice and Warnings at the end of this document page 11 of 12 

Datasheet **www.infineon.com** 

V 2.0 

2019-10-28 

## **Trademarks** 

All referenced product or service names and trademarks are the property of their respective owners. 

## **IMPORTANT NOTICE** 

**Edition 2017-09-05** The information given in this document shall in no event be regarded as a guarantee of conditions or **Published by** characteristics  (“Beschaffenheitsgarantie”) . **Infineon Technologies AG** With respect to any examples, hints or any typical **81726 München, Germany** values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all **© 2019 Infineon Technologies AG.** warranties and liabilities of any kind, including without limitation warranties of non-infringement of **All Rights Reserved.** intellectual property rights of any third party. 

**Do you have a question about this** In addition, any information given in this document **document?** is subject to customer’s compliance with its obligations stated in this document and any **Email: erratum@infineon.com** applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s **Document reference** applications. **n.a.** 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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