# Silicon Carbide Schottky Diode, CoolSiC 6G 650V, Single, 650 V, 24 A, 14.7 nC, TO-220

![Product image](https://novapart.co/image/farnell:2779280/)

**URL**: https://novapart.co/products/IDH10G65C6XKSA1/silicon-carbide-schottky-diode-coolsic-6g-650v
**SKU**: IDH10G65C6XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €1.7600
**Stock**: 500+
**Lead Time**: 358 days (indicative)

## Description

Product Range:CoolSiC 6G 650V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:24A; Total Capacitive Charge Qc:14.7nC; Dio

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2 Pin |
| Product Range | CoolSiC 6G 650V |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-220 |
| Diode Configuration | Single |
| Average Forward Current | 24A |
| Total Capacitive Charge | 14.7nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2779280/)

IDH10G65C6 

## 6[th] Generation CoolSiC™ 

## 650V SiC Schottky Diode 

The CoolSiC™ generation 6 (G6) is the leading edge technology from Infineon for the SiC Schottky barrier diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a lower figure of merit ( _Qc_ x _VF_ ). The CoolSiC™ Schottky diode 650 V G6 has been designed to complement our 600 V and 650 V CoolMOS™ 7 families, meeting the most stringent application requirements in this voltage range. 

Table 1 Key performance parameters Parameter Value Unit _VRRM_ 650 V _QC_ ( _VR_ = 400 V) 14.7 nC _EC_ ( _VR_ = 400 V) 2.7 µJ _IF_ ( _TC_ ≤ 140 °C, _D_ = 1) 10 A _VF_ ( _IF_ = 10 A, _Tj_ = 25 °C) 1.25 V ~~———~~ Table 2 Package information Type / ordering Code Package Marking IDH10G65C6 PG-TO220-2 D1065C6 ~~—~~ 

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PG-TO220-2<br>CASE<br>1) Cathode<br>1  2) Anode<br>2<br>**----- End of picture text -----**<br>


## Features 

- Best in class forward voltage (1.25 V) 

- Best in class figure of merit ( _Qc_ x _VF_ ) 

- High dv/dt ruggedness (150 V/ns) 

## Benefits 

- System efficiency improvement 

- System cost and size savings due to the reduced cooling requirements 

- Enabling higher frequency and increased power density 

## Potential Applications 

- Power factor correction in SMPS 

- Solar inverter 

- Uninterruptible power supply 

## Product Validation 

- Qualified for industrial applications according to the relevant tests of JEDEC (J-STD20 and JESD22) 

Please read the Important Notice and Warnings at the end of this document 

Final Datasheet 

Rev. 2.0, 2017-05-23 

IDH10G65C6 

## 6[th ] Generation CoolSiC[TM ] 

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## Table of Content 

|1|Maximum ratings ............................................................................................................................... 3|
|---|---|
|2|Thermal characteristics ..................................................................................................................... 3|
|3|Electrical characteristics .................................................................................................................... 4|
|3.1|Static characteristics ............................................................................................................................... 4|
|3.2|AC characteristics .................................................................................................................................... 4|
|4|Diagrams ............................................................................................................................................ 5|
|5|Simplified forward characteristic ....................................................................................................... 7|
|6|Package outlines ................................................................................................................................ 8|



Final Datasheet 

Rev. 2.0, 2017-05-23 

2 

6[th ] Generation CoolSiC[TM ] IDH10G65C6 

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## 1 Maximum ratings 

## Table 3 Maximum ratings 

|Table 3<br>Maximum ratings|||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Values|||Unit|Note/Test condition|
|||Min.|Typ.|Max.|||
|Continuous forward current|_IF_|–|–|10|A|_TC_≤ 140 °C, _D_= 1|
|||–|–|13||_TC_≤ 125 °C, _D_= 1|
|||–|–|24||_TC_≤ 25 °C, _D_= 1|
|Surge-repetitive forward current,<br>sine halfwave1|_IF,RM_|–|–|44||_TC_= 25 °C,_tp _= 10 ms|
|Surge non-repetitive forward<br>current, sine halfwave|_IF,SM_|–|–|55||_TC_= 25 °C, _tp_ = 10 ms|
|||–|–|44||_TC_= 150 °C, _tp_ = 10 ms|
|Non-repetitive peak forward<br>current|_IF,max_|–|–|600||_TC_= 25 °C,_tp _= 10 µs|
|i²t value|_∫ i²dt_|–|–|15|A²s|_TC_= 25 °C, _tp _= 10 ms|
|||–|–|10||_TC_= 150 °C, _tp _= 10 ms|
|Repetitivepeak reverse voltage|_VRRM_|–|–|650|V|_TC_= 25 °C|
|Diode dv/dt ruggedness|_dv/dt_|–|–|150|V/ns|_VR _= 0..480 V|
|Power dissipation|_Ptot_|–|–|72|W|_TC_= 25°C, _RthJC,max_|
|Operating and storage<br>temperature|_Tj_<br>_Tstg_|-55|–|175|°C|–|
|Mountingtorque|–|–|–|70|Ncm|M3 screw|



## 2 Thermal characteristics 

## Table 4 Thermal characteristics (PG-TO-220-2) 

|Symbol||Values||Unit|Note/Test condition||
|---|---|---|---|---|---|---|
||Min.|Typ.|Max.||||
|_R_thJC|–|1.3|2.1|K/W|–||
|_R_thJA|–|–|62||leaded||
|_T_sold|–|–|260|°C|1.6 mm (0.063 in.) from<br>case for 10 s||



> 1 The surge-repetitive forward current test was performed with 1000 pulses (half-wave rectified sine with the 10 ms period). 

Final Datasheet 

Rev. 2.0, 2017-05-23 

3 

6[th ] Generation CoolSiC[TM ] IDH10G65C6 

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## 3 Electrical characteristics 

## 3.1 Static characteristics 

## Table 5 Static characteristics 

|Parameter|Symbol||Values||Unit|Note/Test condition|
|---|---|---|---|---|---|---|
|||Min.|Typ.|Max.|||
|DC blockingvoltage|_VDC_|650|–|–|V|_Tj _= 25 °C|
|Diode forward voltage|_VF_|–|1.25|1.35||_IF_ = 10 A, _Tj _= 25 °C|
|||–|1.5|–||_IF_ = 10 A, _Tj_ = 150 °C|
|Reverse current|_IR_|–|1.0|33|µA|_VR_ = 420 V, _Tj_ = 25 °C|
|||–|33|–||_VR_ = 420 V, _Tj_ = 125 °C|
|||–|77|–||_VR_ = 420 V, _Tj _= 150 °C|



## 3.2 AC characteristics 

## Table 6 AC characteristics 

|Table 6<br>AC characteristics|||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol||Values||Unit|Note/Test Condition|
|||Min.|Typ.|Max.|||
|Total capacitive charge|_Qc_|–|14.7|–|nC|_VR_ = 400 V,_Tj_= 150 °C,<br>di/dt = 200 A/µs,IF≤ IF,MAX|
|Total capacitance|_C_|–|495|–|pF|_VR _= 1 V_, f_= 1 MHz,<br>_Tj_ = 25 °C|
|||–|29|–||_VR _= 300 V,_f_= 1 MHz,<br>_Tj_ = 25 °C|
|||–|28|–||_VR _= 600 V,_f_= 1 MHz,<br>_Tj_ = 25 °C|



Final Datasheet 

Rev. 2.0, 2017-05-23 

4 

6[th ] Generation CoolSiC[TM ] IDH10G65C6 

## 4 Diagrams 

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~ oo (ot s+ D=0.10<br>=-=-RthJC, max 70 — -D=0.50<br>120 5 ——RthJC, typ 80 ---D=0.30<br>100<br>60<br>5 80 | | < 50 -. ——D=1.00“re-- D=0.70<br>o<br>60 ae = — 40 a *e ~<br>es 30 = Fe<br>20 10 as‘:<br>” PAN) ” “ESS<br>55 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T. [°C] T, PC]<br>eG Ptot = f( TC )  IF  = f( TC );  RthJC,max ;  Tj  ≤ 175 °C; parameter:  D  =  t P/ T<br>**----- End of picture text -----**<br>


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Figure 1 Power dissipation<br>**----- End of picture text -----**<br>


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Figure 2 Max. forward current<br>**----- End of picture text -----**<br>


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14 t) 7 AG<br>i Ne<br>- WA 175°C<br>: | Y /W<br>4<br>an Os 1 #15 2 25<br>Ve [VI<br>IF   =  f(VF) ;  tp = 10 µs; parameter:  Tj<br>a<br>**----- End of picture text -----**<br>


Figure 3 Typ. forward characteristics 

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Y, y<br>Y,<br>**----- End of picture text -----**<br>


_IF_ = _f(VF)_ ; _tp_ = 10 µs; parameter: _Tj_ 

Figure 4 Typ. forward characteristics in surge  current 

Final Datasheet 

Rev. 2.0, 2017-05-23 

5 

## 6[th ] Generation CoolSiC[TM ] IDH10G65C6 

_QC_ = _f(diF/dt_ ); _Tj_ = 150 °C; _VR_ = 400 V; _IF_ ≤ _IF,max_ 

Figure 5 Typ. cap. charge  vs. current slope 

_Zth,jc_ =  f( _t_ P); parameter: _D_ = _t_ P/ _T_ 

Figure 7 Max. transient thermal impedance 

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**----- Start of picture text -----**<br>
(ee<br>1E-3<br>1E-4 = ee<br>_, 1E-5 amesst: i<br>= 250<br>|_ —— [|]<br>—~ 4E-6 Eaere<br>. ace seo<br>_.1E-9 eRe<br>100 200 300 400 500 600<br>Ver [V]<br>IR = f(VR); parameter:  Tj<br>Figure 6 Typ. reverse current vs. reverse voltage<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Ve [V]<br>C =  f( V R); T j = 25 °C; f  = 1 MHz<br>**----- End of picture text -----**<br>


Figure 8 Typ. capacitance vs. reverse voltage 

Final Datasheet 

Rev. 2.0, 2017-05-23 

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6[th ] Generation CoolSiC[TM ] 

IDH10G65C6 

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**----- Start of picture text -----**<br>
"TELE<br>PE / ‘A<br>5 EE<br>9 SSR eney 4enee<br>g ES eEey #eEEEEe<br>| ae<br>EEE<br>0 100 200 300 400 500 600<br>Ver [V]<br>E C = f( V R)<br>Figure 9 Typ. capacitance stored energy<br>**----- End of picture text -----**<br>


## 5 Simplified forward characteristic 

_V_  _V_  _R_  _I F TH DIFF F_ 

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DIFF<br>TH<br>**----- End of picture text -----**<br>


Treshold voltage ( _VTH_ ): _VTH_  _Tj_   .0001  _Tj_  .0766  V Differential resistance ( _RDIFF_ ): 2 _RDIFF_  _T j_  _A_  _T j_  _B_  _T j_  _C_  -6 _A_  1.24  10 -5 _B_  .899  10 -2 _C_  .475  10 

_V_ F = f( _I_ F) 

_T_ j [°C]; -55 °C ≤ _T_ j ≤ 175 °C; _I_ F ≤ 10 A 

Figure 10 Equivalent forward current curve 

Figure 11 Mathematical Equation 

Final Datasheet 

Rev. 2.0, 2017-05-23 

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6[th ] Generation CoolSiC[TM ] IDH10G65C6 

## 6 Package outlines 

Figure 12 Outlines of the package PG-TO220-2, dimensions in mm/inches 

Final Datasheet 

Rev. 2.0, 2017-05-23 

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IDH10G65C6 

## 6[th ] Generation CoolSiC[TM ] 

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## Revision History 

## Major changes since the last revision 

|Revision|Date|Subject(major changes since last revision)|
|---|---|---|
|2.0|2017-05-23|Release of final version|
||||
||||



Final Datasheet 

Rev. 2.0, 2017-05-23 

9 

## Other Trademarks 

All referenced product or service names and trademarks are the property of their respective owners. 

## IMPORTANT NOTICE 

Edition 2017-05-23 The information given in this document shall in no event be regarded as a guarantee of conditions or Published by characteristics (“Beschaffenheitsgarantie”). Infineon Technologies AG With respect to any examples, hints or any typical 81726 München, Germany values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all © 2017 Infineon Technologies AG. warranties and liabilities of any kind, including without limitation warranties of non-infringement All Rights Reserved. of intellectual property rights of any third party. Do you have a question about this In addition, any information given in this document document? is subject to customer’s compliance with its obligations stated in this document and any Email: erratum@infineon.com applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in Document reference customer’s applications. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( www.infineon.com ). 

## WARNINGS 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 



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