# Silicon Carbide Schottky Diode, thinQ 2G 1200V Series, Single, 1.2 kV, 7.5 A, 27 nC, TO-220

![Product image](https://novapart.co/image/farnell:1844985/)

**URL**: https://novapart.co/products/IDH08S120AKSA1/silicon-carbide-schottky-diode-thinq-2g-1200v
**SKU**: IDH08S120AKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €1.2200
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 2 Pin |
| Product Range | thinQ 2G 1200V |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-220 |
| Diode Configuration | Single |
| Average Forward Current | 7.5A |
| Total Capacitive Charge | 27nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 1.2kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1844985/)

**IDH08S120** 

## **thinQ![TM] SiC Schottky Diode** 

## **Features** 

- Revolutionary semiconductor material - Silicon Carbide 

- Switching behavior benchmark 

- No reverse recovery / No forward recovery 

- Temperature independent switching behavior 

|**Product Summary**||||||
|---|---|---|---|---|---|
|**_V_DC**||**1200**<br>**600**|||**V**|
|||||||
|**_QC_**||**27**<br>**3.2**|||**nC**|
|||||||
|**_I_F;** **_T_C****_<_130 °C**||**7.5**<br>**3**|||**A**|



- High surge current capability 

- Pb-free lead plating; RoHS compliant 

## **PG-TO220-2** 

- Qualified according to JEDEC[1)] for target applications 

- Optimized for high temperature operation 

- Lowest Figure of Merit QC/IF 

## **thinQ![TM] Diode designed for fast switching applications like:** 

- SMPS e.g.; CCM PFC 

- Motor Drives; Solar Applications; UPS 

|**Type**|||**Package**||**Marking**||**Pin 1**|**Pin 1**||**Pin 2**|**Pin 2**|
|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||||||
|||||||||||||
|**IDH08S120**|||**PG-TO220-2**||**D08S120**||**C**|||**A**||



## **Maximum ratings** 

|**Parameter**|**Symbol **<br>~~De~~|**Conditions**<br>~~De~~|**Value**<br>~~De~~|**Unit**|
|---|---|---|---|---|
|Continuous forward current|_I_F<br>~~ee~~|_T_C<130 °C<br>~~ee~~|7.5<br>~~ee~~|A|
|Surge non-repetitive forward current,<br>sine halfwave|_I_F,SM<br>~~ee~~|_T_C=25 °C,_t_p=10 ms<br>~~ee~~|39<br>~~ee~~||
|||_T_C=150 °C,_t_p=10 ms<br>~~ee~~<br>~~a~~|33<br>~~ee~~<br>~~a~~||
|Non-repetitive peak forward current|_I_F,max<br>~~De~~|_T_C=25 °C,_t_p=10 µs<br>~~De~~|160<br>~~De~~||
|_i_²_t_value|∫_i_ 2d_t_<br>~~EE~~|_T_C=25 °C,_t_p=10 ms<br>~~EE~~|7<br>~~EE~~|A2s|
|||_T_C=150 °C,_t_p=10 ms<br>~~EE~~<br>~~i~~|5<br>~~EE~~<br>~~i~~||
|Repetitive peak reverse voltage|_V_RRM<br>~~ee~~|_T_j=25 °C<br>~~ee~~|1200<br>~~ee~~|V|
|Diode dv/dt ruggedness|d_v/_d_t_<br>~~De~~|VR= 0….960 V<br>~~De~~|50<br>~~De~~|V/ns|
|Power dissipation|_P_tot<br>~~ee~~|_T_C=25 °C<br>~~ee~~|100<br>~~ee~~|W|
|Operating and storage temperature|_T_j,_T_stg<br>~~De~~|~~De~~|-55 ... 175<br>~~De~~|°C|
|Soldering temperature,<br>wavesolderingonlyallowed at leads|_T_sold<br>~~i~~|1.6mm (0.063 in.)<br>from case for 10s<br>~~i~~|260<br>~~i~~||
|Mounting torque|~~ee~~|M3 and M3.5 screws<br>~~ee~~|60<br>~~ee~~|Mcm|



**Rev. 2.0** 

**page 1** 

**2010-04-20** 

**IDH08S120** 

|**IDH08S120**|**IDH08S120**|**IDH08S120**|**IDH08S120**|**IDH08S120**|**IDH08S120**|**IDH08S120**|**IDH08S120**|
|---|---|---|---|---|---|---|---|
|**Parameter**<br>**Symbol Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~ee~~<br>~~ee~~||||||||
|**Thermal characteristics**||||||||
|Thermal resistance, junction - case<br>_R_thJC<br>-<br>-<br>1,5<br>K/W<br>Thermal resistance,<br>junction - ambient<br>Thermal resistance,<br>junction- ambient,<br>leaded<br>-<br>-<br>62<br>_R_thJA<br>~~Tr~~||||||||
|**Electrical characteristics,**at_T_j=25 °C, unless otherwise specified|=25 °C, unless otherwise specified||=25 °C, unless otherwise specified|||||
|**Static characteristics**||||||||
|DC blocking voltage||_V_DC|_I_R=0.05 mA,_T_j=25 °C|1200|-|-|V|
|Diode forward voltage||_V_F|_I_F=7.5 A,_T_j=25 °C|-|1,65|1,8||
||||_I_F=7.5 A,_T_j=150 °C|-|2,55|-||
|Reverse current||_I_R|_V_R=1200 V,_T_j=25 °C|-|8|180|µA|
||||_V_R=1200 V,_T_j=150 °C|-|30|1000||
|**AC characteristics**||||||||
|Total capacitive charge||_Q_c|_V_R=400 V,_I_F≤_I_F,max,|-|27|-|nC|
||||d_i_F/d_t_=200 A/µs,|||||
|Switching time2)||_t c_|_T_j=150 °C|-|-|<10|ns|
|Total capacitance||_C_|_V_R=1 V,_f_=1 MHz|-|380|-|pF|
||||_V_R=300 V,_f_=1 MHz|-|30|-||
||||_V_R=600 V,_f_=1 MHz|-|27|-||



- 1) J-STD20 and JESD22 

> 2) _t_ c is the time constant for the capacitive displacement current waveform (independent from _T_ j, ILOAD and di/dt), different from _t_ rr which is dependent on _T_ j, ILOAD and di/dt. No reverse recovery time constant _t_ rr due to absence of minority carrier injection 

- 3) Under worst case Zth conditions. 

- 4) Only capacitive charge occuring, guaranteed by design 

**Rev. 2.0** 

**page 2** 

**2010-04-20** 

**IDH08S120** 

**1 Power dissipation** 

_P_ tot=f( _T_ C) 

## **2 Diode forward current** 

_I_ F=f( _T_ C)[3)] ; _T_ j≤175 °C; parameter: _D = t_ p _/T_ 

**==> picture [226 x 266] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>25 75 125 175<br>T C [°C]<br> [W]<br>tot<br>P<br>**----- End of picture text -----**<br>


**==> picture [225 x 267] intentionally omitted <==**

**----- Start of picture text -----**<br>
70<br>0.1<br>60<br>50<br>40<br>0.3<br>30<br>0.5<br>0.7<br>20<br>1<br>10<br>0<br>25 75 125 175<br>T C [°C]<br> [A]<br>I F<br>**----- End of picture text -----**<br>


## **3 Typ. forward characteristic** 

_I_ F=f( _V_ F); _t_ p=400 µs parameter: _T_ j 

## **4 Typ. Reverse current vs. reverse voltage** 

EC=f(VR) 

**==> picture [460 x 267] intentionally omitted <==**

**----- Start of picture text -----**<br>
16 10 [2]<br>150 °C<br>-55 °C 25 °C<br>14<br>100 °C<br>10 [1]<br>175 °C<br>12<br>10<br>10 [0]<br>8 175 °C<br>10 [-1] 150 °C<br>6<br>100 °C<br>4 25 °C<br>10 [-2]<br>-55 °C<br>2<br>0 y) 10 [-3]<br>0 1 2 3 4 5 200 400 600 800 1000 1200<br>V SD [V] V R[V]<br>[µA]<br> [A] I F I R<br>**----- End of picture text -----**<br>


**Rev. 2.0** 

**page 3** 

**2010-04-20** 

**IDH08S120** 

## **5 Typ. capacitance charge vs. current slope** 

_Q_ C=f(d _i_ F/d _t_ )[4)] ; _T_ j=150 °C; _I_ F≤ _I_ F,max 

## **6 Transient thermal impedance** 

_Z_ thJC=f( _t_ p) 

parameter: _D_ = _t_ p/ _T_ 

**==> picture [465 x 610] intentionally omitted <==**

**----- Start of picture text -----**<br>
30 10 [1]<br>25<br>10 [0]<br>0.5<br>20<br>0.2<br>0.1<br>15 10 [-1] 0.05<br>0.02<br>10<br>0<br>10 [-2]<br>5<br>0 le 10 [-3]<br>100 400 700 1000 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1]<br>di F/d t  [A/µs] t  [s]<br>7 Typ. capacitance vs. reverse voltage 8 Typ.  C   stored energy<br> =f( V  R); );  T  C=25 °C, =25 °C,  f  =1 MHz E  C=f( V  R)<br>400 7<br>6<br>300<br>5<br>4<br>200<br>3<br>2<br>100<br>1<br>0 MZ 0<br>1 10 100 1000 0 200 400 600<br>V R [V] V R [V]<br>[nC]  [K/W]<br>C<br>Q thJC<br>Z<br> [pF]  [µC]c<br>C E<br>**----- End of picture text -----**<br>


## **7 Typ. capacitance vs. reverse voltage** 

_C_ =f( _V_ R); ); _T_ C=25 °C, =25 °C, _f_ =1 MHz 

**Rev. 2.0** 

**2010-04-20** 

**page 4** 

**IDH08S120** 

## **PG-TO220-2: Outline** 

**==> picture [301 x 13] intentionally omitted <==**

**----- Start of picture text -----**<br>
thinQ! [TM]  2G Diode designed for fast switching applications like:<br>**----- End of picture text -----**<br>


Dimensions in mm/inches 

**Rev. 2.0** 

**2010-04-20** 

**page 5** 

**IDH08S120** 

## **Published by** 

## **Infineon Technologies AG** 

## **81726 Munich, Germany** 

**© 2010 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights **thinQ![TM] 2G Diode designed for fast switching applications like:** 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

**Rev. 2.0** 

**page 6** 

**2010-04-20** 



## Links

- [View this product on Novapart](https://novapart.co/products/IDH08S120AKSA1/silicon-carbide-schottky-diode-thinq-2g-1200v)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/idh08s120aksa1/diode-schottk-1200v-7-5a-to220/dp/1844985)
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