# Silicon Carbide Schottky Diode, CoolSiC 6G 650V, Single, 650 V, 51 A, 26.8 nC, HDSOP

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**URL**: https://novapart.co/products/IDDD20G65C6XTMA1/silicon-carbide-schottky-diode-coolsic-6g-650v
**SKU**: IDDD20G65C6XTMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €3.1300
**Stock**: 10+
**Lead Time**: 358 days (indicative)

## Description

Product Range:CoolSiC 6G 650V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:51A; Total Capacitive Charge Qc:26.8nC; Diod

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 10 Pin |
| Product Range | CoolSiC 6G 650V |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | HDSOP |
| Diode Configuration | Single |
| Average Forward Current | 51A |
| Total Capacitive Charge | 26.8nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2895608/)

IDDD20G65C6 ES Giteon 

## 6[th] Generation CoolSiC™ 

## 650V SiC Schottky Diode 

The CoolSiC™ generation 6 (G6) is the leading edge technology from Infineon for the SiC Schottky barrier diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a lower figure of merit ( _Qc_ x _VF_ ). The CoolSiC™ Schottky diode 650 V G6 

application requirements in this voltage range. 

|Table 1|Key performance parameters|Key performance parameters|Key performance parameters|Key performance parameters|
|---|---|---|---|---|
|Parameter||Value||Unit|
|_VRRM_||650||V|
|_QC_(_VR_ = 400 V)||26.8||nC|
|_EC_(_VR_= 400 V)||5.3||µJ|
|_IF_ (_TC_<br>~~-~~|_D_= 1)|20||A|
|_VF_(_IF_= 20 A,_Tj _ = 25 °C)||1.25||V|
|Table 2|Package information||||
|Type / ordering Code||Package||Marking|
|IDDD20G65C6|IDDD20G65C6|PG-HDSOP-10-1||D2065C6|



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PG-HDSOP-10-1<br>Cathode<br>Pin 6-10 Pin 1-2: n.c.<br>Pin 3-5: Anode<br>Pin 3-5 Pin 6-10: Cathode<br>**----- End of picture text -----**<br>


## Features 

- Best in class forward voltage (1.25 V) 

- Best in class figure of merit ( _Qc_ x _VF_ ) 

- High dv/dt ruggedness (150 V/ns) 

## Benefits 

- System efficiency improvement 

- System cost and size savings due to the reduced cooling requirements 

- Enabling higher frequency and increased power density 

## Potential Applications 

- Power factor correction in SMPS 

- Solar inverter 

- Uninterruptible power supply 

## Product Validation 

- Qualified for industrial applications according to the relevant tests of JEDEC (J-STD20 and JESD22) 

Please read the Important Notice and Warnings at the end of this document 

Final Datasheet 

Rev. 2.0, 2018-02-06 

IDDD20G65C6 

## 6[th] Generation CoolSiC™ 

**==> picture [103 x 46] intentionally omitted <==**

## Table of Content 

|1|Maximum ratings ............................................................................................................................... 3|
|---|---|
|2|Thermal characteristics ..................................................................................................................... 3|
|3|Electrical characteristics .................................................................................................................... 4|
|3.1|Static characteristics ............................................................................................................................... 4|
|3.2|AC characteristics .................................................................................................................................... 4|
|4|Diagrams ............................................................................................................................................ 5|
|5|Simplified forward characteristic ....................................................................................................... 7|
|6|Package outlines ................................................................................................................................ 8|



Final Datasheet 

Rev. 2.0, 2018-02-06 

2 

6[th ] Generation CoolSiC[TM ] IDDD20G65C6 

**==> picture [103 x 46] intentionally omitted <==**

## 1 Maximum ratings 

## Table 3 Maximum ratings 

|Table 3<br>Maximum ratings|||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Values|||Unit|Note/Test condition|
|||Min.|Typ.|Max.|||
|Continuous forward current|_IF_|–|–|20|A|_TC_≤ 145 °C, _D_= 1|
|||–|–|27||_TC_≤ 125 °C, _D_= 1|
|||–|–|51||_TC_≤ �� °C, _D_= 1|
|Surge-repetitive forward current,<br>sine halfwave1|_IF,RM_|–|–|87||_TC_= 25 °C,_tp _= 10 ms|
|Surge non-repetitive forward<br>current, sine halfwave|_IF,SM_|–|–|99||_TC_= 25 °C, _tp_ = 10 ms|
|||–|–|79||_TC_= 150 °C, _tp_ = 10 ms|
|Non-repetitive peak forward<br>current|_IF,max_|–|–|780||_TC_= 25 °C,_tp _= 10 µs|
|i²t value|_∫ i²dt_|–|–|49|A²s|_TC_= 25 °C, _tp _= 10 ms|
|||–|–|31||_TC_= 150 °C, _tp _= 10 ms|
|Repetitivepeak reverse voltage|_VRRM_|–|–|650|V|_TC_= 25 °C|
|Diode dv/dt ruggedness|_dv/dt_|–|–|150|V/ns|_VR _= 0..480 V|
|Power dissipation|_Ptot_|–|–|169|W|_TC_= 25°C, _RthJC,max_|
|Operating and storage<br>temperature|_Tj_<br>_Tstg_|-55|–|175|°C|–|



## 2 Thermal characteristics 

## Table 4 Thermal characteristics 

|tics|||||||
|---|---|---|---|---|---|---|
|Symbol||Values||Unit|Note/Test condition||
||Min.|Typ.|Max.||||
|_R_thJC|–|0.5|0.9|K/W|–||
|_R_thJA|–|–|62||Device on PCB, minimal<br>footprint||
|_R_thJA|–|35|45||Device on 40*40*1.5 mm<br>epoxy PCB FR4  (one layer,<br>70 µm thickness) with 6<br>cm2copper for cathode<br>connection and cooling,<br>PCB vertically placed<br>without air stream cooling||
|_Tsold_|–|–|260|°C|Allowed only reflow<br>soldering||



1 The surge-repetitive forward current test was performed with 1000 pulses (half-wave rectified sine with the 10 ms period). Final Datasheet 3 

Rev. 2.0, 2018-02-06 

6[th ] Generation CoolSiC[TM ] IDDD20G65C6 

**==> picture [103 x 46] intentionally omitted <==**

## 3 Electrical characteristics 

## 3.1 Static characteristics 

## Table 5 Static characteristics 

|Parameter|Symbol||Values||Unit|Note/Test condition|
|---|---|---|---|---|---|---|
|||Min.|Typ.|Max.|||
|DC blockingvoltage|_VDC_|650|–|–|V|_Tj _= 25 °C|
|Diode forward voltage|_VF_|–|1.25|1.35||_IF_ = 20 A, _Tj _= 25 °C|
|||–|1.5|–||_IF_ = 20 A, _Tj_ = 150 °C|
|Reverse current|_IR_|–|2.0|67|µA|_VR_ = 420 V, _Tj_ = 25 °C|
|||–|66|–||_VR_ = 420 V, _Tj_ = 125 °C|
|||–|153|–||_VR_ = 420 V, _Tj _= 150 °C|



## 3.2 AC characteristics 

## Table 6 AC characteristics 

|Table 6<br>AC characteristics|||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol||Values||Unit|Note/Test Condition|
|||Min.|Typ.|Max.|||
|Total capacitive charge|_Qc_|–|26.8|–|nC|_VR_ = 400 V,_Tj_= 150 °C,<br>di/dt = 200 A/µs,IF≤ IF,MAX|
|Total capacitance|_C_|–|970|–|pF|_VR _= 1 V_, f_= 1 MHz,<br>_Tj_ = 25 °C|
|||–|57|–||_VR _= 300 V,_f_= 1 MHz,<br>_Tj_ = 25 °C|
|||–|55|–||_VR _= 600 V,_f_= 1 MHz,<br>_Tj_ = 25 °C|



Final Datasheet 

Rev. 2.0, 2018-02-06 

4 

6[th ] Generation CoolSiC[TM ] IDDD20G65C6 

## 4 Diagrams 

_Ptot_ = f( _TC_ ) _IF_ = f( _TC_ ); _RthJC,max_ ; _Tj_ ≤ 175 °C; parameter: _D_ = _t_ P/ _T_ 

Figure 1 Power dissipation 

Figure 2 Max. forward current 

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**----- Start of picture text -----**<br>
FE aATLL[~A 180 ssoway,<br>} [P10 460 ec HY<br>| / [Tiso-c YA<br>[/ JN 140 / L<br>/ 175°C<br>120 lf ff<br>WY We / Al<br>// = 100 / Oe<br>4 fy, ~ 80 Y, JA<br>Yi VA 175°<br> f “0 Ye<br>0iL<br>005 1 #15 2 25 3 0 1 2 3 4 5 6<br>V; IV] V; [V]<br>IF   =  f(VF) ;  tp = 10 µs; parameter:  Tj IF   =  f(VF) ;  tp  = 10 µs; parameter:  Tj<br>**----- End of picture text -----**<br>


Figure 3 Typ. forward characteristics 

Figure 4 Typ. forward characteristics in surge  current 

Final Datasheet 

Rev. 2.0, 2018-02-06 

5 

## 6[th ] Generation CoolSiC[TM ] IDDD20G65C6 

0 

_QC_ = _f(diF/dt_ ); _Tj_ = 150 °C; _VR_ = 400 V; _IF_ ≤ _IF,max_ 

Figure 5 Typ. cap. charge  vs. current slope 

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**----- Start of picture text -----**<br>
—_ _<br>|-— T50°c|_<br>me<br>=<br>mre<br>a<br> aace acl [_]<br>-<br>200 300 400 500 600<br>Ve [V]<br>IR = f(VR); parameter:  Tj<br>**----- End of picture text -----**<br>


Figure 6 Typ. reverse current vs. reverse voltage 

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**----- Start of picture text -----**<br>
isa<br>**----- End of picture text -----**<br>


_Zth,jc_ =  f( _t_ P); parameter: _D_ = _t_ P/ _T_ Figure 7 Max. transient thermal impedance 

_C = f(VR); Tj = 25 °C; f = 1 MHz_ 

Figure 8 Typ. capacitance vs. reverse voltage 

Final Datasheet 

Rev. 2.0, 2018-02-06 

6 

6[th ] Generation CoolSiC[TM ] IDDD20G65C6 

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**----- Start of picture text -----**<br>
~ FLEE<br>12<br>10 Gee<br>5=8<br>s<br>PEELE<br>TEA; Z|<br>[et<br>0 100 200 300 400 500<br>Ver [V]<br>E C = f( V R)<br>Figure 9 Typ. capacitance stored energy<br>**----- End of picture text -----**<br>


## 5 Simplified forward characteristic 

_V_  _V_  _R_  _I F TH DIFF F_ Treshold voltage ( _VTH_ ): _VTH_  _Tj_  .0001 _Tj_  .0766 V 

Differential resistance ( _RDIFF_ ): 

2 _RDIFF_  _T j_  _A_  _T j_  _B_  _T j_  _C_  -7 DIFF _A_  6.19 10 -5 TH _B_  .450 10 -2 _C_  .238 10 V; [V] _V_ F = f( _I_ F) _T_ j [°C]; -55 °C ≤  [°C]; -55 °C ≤ _T_ j ≤ 175 °C;  ≤ 175 °C; 

_T_ j [°C]; -55 °C ≤  [°C]; -55 °C ≤ _T_ j ≤ 175 °C;  ≤ 175 °C; _I_ F ≤ 20 A 

Figure 10 Equivalent forward current curve 

Figure 11 Mathematical Equation 

Final Datasheet 

Rev. 2.0, 2018-02-06 

7 

6[th ] Generation CoolSiC[TM ] 

IDDD20G65C6 

## 6 Package outlines 

**==> picture [182 x 111] intentionally omitted <==**

**----- Start of picture text -----**<br>
--|0.25@)]a)B|C<br>GAUGE<br>NOTES:<br>1. INDUSTRIAL QUALITY GRADE<br>2. ALL DIMENSIONS REFER TO JEDEC STANDARD TO-252<br>AND DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.<br>**----- End of picture text -----**<br>


Figure 12 Outlines of the package PG-HDSOP-10-1, dimensions in milimeters 

Final Datasheet 

Rev. 2.0, 2018-02-06 

8 

**6[th] IDDD20G65C6** 

## IDDD20G65C6 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2018-02-26|Release of final version|



## **erratum@infineon.com** 

## **Information** 

## **www.infineon.com** ). 

## **Warnings** 

9 



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