# Silicon Carbide Schottky Diode, CoolSiC 6G 650V, Single, 650 V, 43 A, 21.5 nC, HDSOP

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**URL**: https://novapart.co/products/IDDD16G65C6XTMA1/silicon-carbide-schottky-diode-coolsic-6g-650v
**SKU**: IDDD16G65C6XTMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €2.5300
**Stock**: 10+
**Lead Time**: 358 days (indicative)

## Description

Product Range:CoolSiC 6G 650V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:43A; Total Capacitive Charge Qc:21.5nC; Di

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 10 Pin |
| Product Range | CoolSiC 6G 650V |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | HDSOP |
| Diode Configuration | Single |
| Average Forward Current | 43A |
| Total Capacitive Charge | 21.5nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2895607/)

IDDD16G65C6 ES Giteon 

## 6[th] Generation CoolSiC™ 

## 650V SiC Schottky Diode 

The CoolSiC™ generation 6 (G6) is the leading edge technology from Infineon for the SiC Schottky barrier diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a lower figure of merit ( _Qc_ x _VF_ ). The CoolSiC™ Schottky diode 650 V G6 

application requirements in this voltage range. 

|Parameter|Value|Unit|
|---|---|---|
|_VRRM_|650|V|
|_QC_(_VR_ = 400 V)|21.5|nC|
|_EC_(_VR_= 400 V)|4.3|µJ|
|_IF_ (_TC_<br>_D_= 1)<br>~~-~~|16|A|
|_VF_(_IF_= 16 A,_Tj _ = 25 °C)|1.25|V|



|Table 2|Package information|Package information||
|---|---|---|---|
|Type / ordering Code|Type / ordering Code|Package|Marking|
|IDDD16G65C6||PG-HDSOP-10-1|D1665C6|



**==> picture [193 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
PG-HDSOP-10-1<br>Cathode<br>Pin 6-10 Pin 1-2: n.c.<br>Pin 3-5: Anode<br>Pin 3-5  Pin 6-10: Cathode<br>**----- End of picture text -----**<br>


## Features 

- Best in class forward voltage (1.25 V) 

- Best in class figure of merit ( _Qc_ x _VF_ ) 

- High dv/dt ruggedness (150 V/ns) 

## Benefits 

- System efficiency improvement 

- System cost and size savings due to the reduced cooling requirements 

- Enabling higher frequency and increased power density 

## Potential Applications 

- Power factor correction in SMPS 

- Solar inverter 

- Uninterruptible power supply 

## Product Validation 

- Qualified for industrial applications according to the relevant tests of JEDEC (J-STD20 and JESD22) 

Please read the Important Notice and Warnings at the end of this document 

Final Datasheet 

Rev. 2.0, 2018-02-06 

IDDD16G65C6 

## 6[th ] Generation CoolSiC[TM ] 

**==> picture [103 x 46] intentionally omitted <==**

## Table of Content 

|1|Maximum ratings ............................................................................................................................... 3|
|---|---|
|2|Thermal characteristics ..................................................................................................................... 3|
|3|Electrical characteristics .................................................................................................................... 4|
|3.1|Static characteristics ............................................................................................................................... 4|
|3.2|AC characteristics .................................................................................................................................... 4|
|4|Diagrams ............................................................................................................................................ 5|
|5|Simplified forward characteristic ....................................................................................................... 7|
|6|Package outlines ................................................................................................................................ 8|



Final Datasheet 

Rev. 2.0, 2018-02-06 

2 

6[th ] Generation CoolSiC[TM ] IDDD16G65C6 

**==> picture [103 x 46] intentionally omitted <==**

## 1 Maximum ratings 

## Table 3 Maximum ratings 

|Table 3<br>Maximum ratings|||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Values|||Unit|Note/Test condition|
|||Min.|Typ.|Max.|||
|Continuous forward current|_IF_|–|–|16|A|_TC_≤ 145 °C, _D_= 1|
|||–|–|23||_TC_≤ 125 °C, _D_= 1|
|||–|–|43||_TC_≤ �� °C, _D_= 1|
|Surge-repetitive forward current,<br>sine halfwave1|_IF,RM_|–|–|70||_TC_= 25 °C,_tp _= 10 ms|
|Surge non-repetitive forward<br>current, sine halfwave|_IF,SM_|–|–|82||_TC_= 25 °C, _tp_ = 10 ms|
|||–|–|65||_TC_= 150 °C, _tp_ = 10 ms|
|Non-repetitive peak forward<br>current|_IF,max_|–|–|710||_TC_= 25 °C,_tp _= 10 µs|
|i²t value|_∫ i²dt_|–|–|33|A²s|_TC_= 25 °C, _tp _= 10 ms|
|||–|–|21||_TC_= 150 °C, _tp _= 10 ms|
|Repetitivepeak reverse voltage|_VRRM_|–|–|650|V|_TC_= 25 °C|
|Diode dv/dt ruggedness|_dv/dt_|–|–|150|V/ns|_VR _= 0..480 V|
|Power dissipation|_Ptot_|–|–|141|W|_TC_= 25°C, _RthJC,max_|
|Operating and storage<br>temperature|_Tj_<br>_Tstg_|-55|–|175|°C|–|



## 2 Thermal characteristics 

## Table 4 Thermal characteristics 

|tics|||||||
|---|---|---|---|---|---|---|
|Symbol||Values||Unit|Note/Test condition||
||Min.|Typ.|Max.||||
|_R_thJC|–|0.6|1.0|K/W|–||
|_R_thJA|–|–|62||Device on PCB, minimal<br>footprint||
|_R_thJA|–|35|45||Device on 40*40*1.5 mm<br>epoxy PCB FR4  (one layer,<br>70 µm thickness) with 6<br>cm2copper for cathode<br>connection and cooling,<br>PCB vertically placed<br>without air stream cooling||
|_Tsold_|–|–|260|°C|Allowed only reflow<br>soldering||



1 The surge-repetitive forward current test was performed with 1000 pulses (half-wave rectified sine with the 10 ms period). Final Datasheet 3 

Rev. 2.0, 2018-02-06 

6[th ] Generation CoolSiC[TM ] IDDD16G65C6 

**==> picture [103 x 46] intentionally omitted <==**

## 3 Electrical characteristics 

## 3.1 Static characteristics 

## Table 5 Static characteristics 

|Parameter|Symbol||Values||Unit|Note/Test condition|
|---|---|---|---|---|---|---|
|||Min.|Typ.|Max.|||
|DC blockingvoltage|_VDC_|650|–|–|V|_Tj _= 25 °C|
|Diode forward voltage|_VF_|–|1.25|1.35||_IF_ = 16 A, _Tj _= 25 °C|
|||–|1.5|–||_IF_ = 16 A, _Tj_ = 150 °C|
|Reverse current|_IR_|–|1.6|53|µA|_VR_ = 420 V, _Tj_ = 25 °C|
|||–|53|–||_VR_ = 420 V, _Tj_ = 125 °C|
|||–|123|–||_VR_ = 420 V, _Tj _= 150 °C|



## 3.2 AC characteristics 

## Table 6 AC characteristics 

|Table 6<br>AC characteristics|||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol||Values||Unit|Note/Test Condition|
|||Min.|Typ.|Max.|||
|Total capacitive charge|_Qc_|–|21.5|–|nC|_VR_ = 400 V,_Tj_= 150 °C,<br>di/dt = 200 A/µs,IF≤ IF,MAX|
|Total capacitance|_C_|–|783|–|pF|_VR _= 1 V_, f_= 1 MHz,<br>_Tj_ = 25 °C|
|||–|46|–||_VR _= 300 V,_f_= 1 MHz,<br>_Tj_ = 25 °C|
|||–|44|–||_VR _= 600 V,_f_= 1 MHz,<br>_Tj_ = 25 °C|



Final Datasheet 

Rev. 2.0, 2018-02-06 

4 

6[th ] Generation CoolSiC[TM ] IDDD16G65C6 

## 4 Diagrams 

**==> picture [511 x 19] intentionally omitted <==**

**----- Start of picture text -----**<br>
Ge Ptot = f( TC )  IF  = f( TC );  RthJC,max ;  Tj  ≤ 175 °C; parameter:  D  =  t P/ T<br>**----- End of picture text -----**<br>


**==> picture [142 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 1 Power dissipation<br>**----- End of picture text -----**<br>


**==> picture [156 x 12] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 2 Max. forward current<br>**----- End of picture text -----**<br>


**==> picture [470 x 250] intentionally omitted <==**

**----- Start of picture text -----**<br>
+ } Gace 128 25 ] if}<br>20 ff WS iY<br><= 16 //, / 175°C = 8096 E Y/Y// / f-<br>2 Wi we | LZ Po<br>‘A * ARP EE<br>an 0.5 1 15 2 25 3 ° 1 2 3 4 5 6<br>Vz [V] Ve [V]<br>IF   =  f(VF) ;  tp = 10 µs; parameter:  Tj IF   =  f(VF) ;  tp  = 10 µs; parameter:  Tj<br>Cn<br>Figure 3 Typ. forward characteristics  Figure 4<br>**----- End of picture text -----**<br>


Figure 4 Typ. forward characteristics in surge  current 

Final Datasheet 

Rev. 2.0, 2018-02-06 

5 

## 6[th ] Generation CoolSiC[TM ] 

## IDDD16G65C6 

0 

_QC_ = _f(diF/dt_ ); _Tj_ = 150 °C; _VR_ = 400 V; _IF_ ≤ _IF,max_ 

Figure 5 Typ. cap. charge  vs. current slope 

**==> picture [215 x 275] intentionally omitted <==**

**----- Start of picture text -----**<br>
es  Hee<br>175°C | [__]<br>—<br>4E-4 = ———<br>1E-5. L _ |<br>gaase= ===<br>1E-9 100 200 300 400 500 600<br>IR = f(VR); parameter:  Tj<br>**----- End of picture text -----**<br>


Figure 6 Typ. reverse current vs. reverse voltage 

**==> picture [386 x 35] intentionally omitted <==**

**----- Start of picture text -----**<br>
t, [s] Ve [V]<br>Zth,jc  =  f( t P); parameter:  D  =  t P/ T C = f(VR); Tj =  25 °C ; f =  1 MHz<br>**----- End of picture text -----**<br>


Figure 7 Max. transient thermal impedance 

Figure 8 Typ. capacitance vs. reverse voltage 

Final Datasheet 

Rev. 2.0, 2018-02-06 

6 

6[th ] Generation CoolSiC[TM ] IDDD16G65C6 

**==> picture [120 x 85] intentionally omitted <==**

**----- Start of picture text -----**<br>
Lee<br>0 100 200 300<br>Ver<br>E C = f( V R)<br>**----- End of picture text -----**<br>


Figure 9 Typ. capacitance stored energy 

## 5 Simplified forward characteristic 

**==> picture [135 x 27] intentionally omitted <==**

**----- Start of picture text -----**<br>
DIFF<br>TH<br>**----- End of picture text -----**<br>


_V_  _V_  _R_  _I F TH DIFF F_ Treshold voltage ( _VTH_ ): _VTH_  _Tj_  .0001 _Tj_  .0766 V Differential resistance ( _RDIFF_ ): 2 _RDIFF_  _T j_  _A_  _T j_  _B_  _T j_  _C_  -7 _A_  7.7110 -5 _B_  .560 10 -2 _C_  .29510 

**==> picture [518 x 31] intentionally omitted <==**

**----- Start of picture text -----**<br>
V F = f( I F)  T j [°C]; -55 °C ≤  T j ≤ 175 °C;  I F<br>ee<br>**----- End of picture text -----**<br>


Figure 10 Equivalent forward current curve 

Figure 11 Mathematical Equation 

Final Datasheet 

Rev. 2.0, 2018-02-06 

7 

6[th ] Generation CoolSiC[TM ] IDDD16G65C6 

## 6 Package outlines 

## Figure 12 

## Outlines of the package PG-HDSOP-10-1, dimensions in milimeters 

Final Datasheet 

Rev. 2.0, 2018-02-06 

8 

**6[th] IDDD16G65C6** 

## IDDD16G65C6 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2018-02-26|Release of final version|



## **erratum@infineon.com** 

## **Information** 

## **www.infineon.com** ). 

## **Warnings** 

9 



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