# Silicon Carbide Schottky Diode, CoolSiC 6G 650V, Single, 650 V, 24 A, 12.2 nC, HDSOP

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**URL**: https://novapart.co/products/IDDD08G65C6XTMA1/silicon-carbide-schottky-diode-coolsic-6g-650v
**SKU**: IDDD08G65C6XTMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €1.2300
**Stock**: 1000+
**Lead Time**: 358 days (indicative)

## Description

Product Range:CoolSiC 6G 650V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:24A; Total Capacitive Charge Qc:12.2nC; Di

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 10 Pin |
| Product Range | CoolSiC 6G 650V |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | HDSOP |
| Diode Configuration | Single |
| Average Forward Current | 24A |
| Total Capacitive Charge | 12.2nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2895604/)

IDDD08G65C6 ES Giteon 

## 6[th] Generation CoolSiC™ 

## 650V SiC Schottky Diode 

The CoolSiC™ generation 6 (G6) is the leading edge technology from Infineon for the SiC Schottky barrier diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a lower figure of merit ( _Qc_ x _VF_ ). The CoolSiC™ Schottky diode 650 V G6 

application requirements in this voltage range. 

|Parameter|Value|Unit|
|---|---|---|
|_VRRM_|650|V|
|_QC_(_VR_ = 400 V)|12.2|nC|
|_EC_(_VR_= 400 V)|2.2|µJ|
|_IF_ (_TC_<br>_D_= 1)<br>~~-~~|8|A|
|_VF_(_IF_= 8 A,_Tj _ = 25 °C)|1.25|V|



|Table 2|Package information|Package information||
|---|---|---|---|
|Type / ordering Code|Type / ordering Code|Package|Marking|
|IDDD08G65C6||PG-HDSOP-10-1|D0865C6|



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**----- Start of picture text -----**<br>
PG-HDSOP-10-1<br>Cathode<br>Pin 6-10 Pin 1-2: n.c.<br>Pin 3-5: Anode<br>Pin 3-5 Pin 6-10: Cathode<br>**----- End of picture text -----**<br>


## Features 

- Best in class forward voltage (1.25 V) 

- Best in class figure of merit ( _Qc_ x _VF_ ) 

- High dv/dt ruggedness (150 V/ns) 

## Benefits 

- System efficiency improvement 

- System cost and size savings due to the reduced cooling requirements 

- Enabling higher frequency and increased power density 

## Potential Applications 

- Power factor correction in SMPS 

- Solar inverter 

- Uninterruptible power supply 

## Product Validation 

- Qualified for industrial applications according to the relevant tests of JEDEC (J-STD20 and JESD22) 

Please read the Important Notice and Warnings at the end of this document 

Final Datasheet 

Rev. 2.0, 2018-02-06 

IDDD08G65C6 

## 6[th ] Generation CoolSiC[TM ] 

**==> picture [103 x 46] intentionally omitted <==**

## Table of Content 

|1|Maximum ratings ............................................................................................................................... 3|
|---|---|
|2|Thermal characteristics ..................................................................................................................... 3|
|3|Electrical characteristics .................................................................................................................... 4|
|3.1|Static characteristics ............................................................................................................................... 4|
|3.2|AC characteristics .................................................................................................................................... 4|
|4|Diagrams ............................................................................................................................................ 5|
|5|Simplified forward characteristic ....................................................................................................... 7|
|6|Package outlines ................................................................................................................................ 8|



Final Datasheet 

Rev. 2.0 , 2018-02-06 

2 

6[th ] Generation CoolSiC[TM ] IDDD08G65C6 

**==> picture [103 x 46] intentionally omitted <==**

## 1 Maximum ratings 

## Table 3 Maximum ratings 

|Table 3<br>Maximum ratings|||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Values|||Unit|Note/Test condition|
|||Min.|Typ.|Max.|||
|Continuous forward current|_IF_|–|–|8|A|_TC_≤ 150 °C, _D_= 1|
|||–|–|13||_TC_≤ 125 °C, _D_= 1|
|||–|–|24||_TC_≤ �� °C, _D_= 1|
|Surge-repetitive forward current,<br>sine halfwave1|_IF,RM_|–|–|35||_TC_= 25 °C,_tp _= 10 ms|
|Surge non-repetitive forward<br>current, sine halfwave|_IF,SM_|–|–|47||_TC_= 25 °C, _tp_ = 10 ms|
|||–|–|37||_TC_= 150 °C, _tp_ = 10 ms|
|Non-repetitive peak forward<br>current|_IF,max_|–|–|530||_TC_= 25 °C,_tp _= 10 µs|
|i²t value|_∫ i²dt_|–|–|11|A²s|_TC_= 25 °C, _tp _= 10 ms|
|||–|–|6.9||_TC_= 150 °C, _tp _= 10 ms|
|Repetitivepeak reverse voltage|_VRRM_|–|–|650|V|_TC_= 25 °C|
|Diode dv/dt ruggedness|_dv/dt_|–|–|150|V/ns|_VR _= 0..480 V|
|Power dissipation|_Ptot_|–|–|90|W|_TC_= 25°C, _RthJC,max_|
|Operating and storage<br>temperature|_Tj_<br>_Tstg_|-55|–|175|°C|–|



## 2 Thermal characteristics 

## Table 4 Thermal characteristics 

|tics|||||||
|---|---|---|---|---|---|---|
|Symbol||Values||Unit|Note/Test condition||
||Min.|Typ.|Max.||||
|_R_thJC|–|1.0|1.6|K/W|–||
|_R_thJA|–|–|62||Device on PCB, minimal<br>footprint||
|_R_thJA|–|35|45||Device on 40*40*1.5 mm<br>epoxy PCB FR4  (one layer,<br>70 µm thickness) with 6<br>cm2copper for cathode<br>connection and cooling,<br>PCB vertically placed<br>without air stream cooling||
|_Tsold_|–|–|260|°C|Allowed only reflow<br>soldering||



1 The surge-repetitive forward current test was performed with 1000 pulses (half-wave rectified sine with the 10 ms period). Final Datasheet 3 

Rev. 2.0 , 2018-02-06 

6[th ] Generation CoolSiC[TM ] IDDD08G65C6 

**==> picture [103 x 46] intentionally omitted <==**

## 3 Electrical characteristics 

## 3.1 Static characteristics 

## Table 5 Static characteristics 

|Parameter|Symbol||Values||Unit|Note/Test condition|
|---|---|---|---|---|---|---|
|||Min.|Typ.|Max.|||
|DC blockingvoltage|_VDC_|650|–|–|V|_Tj _= 25 °C|
|Diode forward voltage|_VF_|–|1.25|1.35||_IF_ = 8 A, _Tj _= 25 °C|
|||–|1.5|–||_IF_ = 8 A, _Tj_ = 150 °C|
|Reverse current|_IR_|–|0.8|27|µA|_VR_ = 420 V, _Tj_ = 25 °C|
|||–|27|–||_VR_ = 420 V, _Tj_ = 125 °C|
|||–|62|–||_VR_ = 420 V, _Tj _= 150 °C|



## 3.2 AC characteristics 

## Table 6 AC characteristics 

|Table 6<br>AC characteristics|||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol||Values||Unit|Note/Test Condition|
|||Min.|Typ.|Max.|||
|Total capacitive charge|_Qc_|–|12.2|–|nC|_VR_ = 400 V,_Tj_= 150 °C,<br>di/dt = 200 A/µs,IF≤ IF,MAX|
|Total capacitance|_C_|–|401|–|pF|_VR _= 1 V_, f_= 1 MHz,<br>_Tj_ = 25 °C|
|||–|24|–||_VR _= 300 V,_f_= 1 MHz,<br>_Tj_ = 25 °C|
|||–|23|–||_VR _= 600 V,_f_= 1 MHz,<br>_Tj_ = 25 °C|



Final Datasheet 

Rev. 2.0 , 2018-02-06 

4 

6[th ] Generation CoolSiC[TM ] IDDD08G65C6 

## 4 Diagrams 

**==> picture [511 x 35] intentionally omitted <==**

**----- Start of picture text -----**<br>
a Ptot = f( TC )  IF  = f( TC );  RthJC,max ;  Tj  ≤ 175 °C; parameter:  D  =  t P/ T<br>Figure 1 Power dissipation  Figure 2 Max. forward current<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
14 EY) Toe<br>2 we ain 6a psec)J / le |<br>10 /// hse | 56 LL Jive<br>|I Y//, + 48 Sf] A Z)M<br>~<br>6 WY on ~ 32 oo We,<br>y<br>‘ Y/ 24 YO |<br>]<br>2 16 Yj<br>Mm ; aa P|<br>P=] |) & EERE<br>0 05 1 145 2 25 38 0 1 2 3 4 5 6 7 8<br>Ve [V] Ve [V]<br>Ge IF   =  f(VF) ;  tp = 10 µs; parameter:  Tj IF   =  f(VF) ;  tp  = 10 µs; parameter:  Tj<br>Figure 3 Typ. forward characteristics  Figure 4 Typ. forward characteristics<br>**----- End of picture text -----**<br>


Figure 4 Typ. forward characteristics in surge  current 

Final Datasheet 

Rev. 2.0 , 2018-02-06 

5 

## 6[th ] Generation CoolSiC[TM ] IDDD08G65C6 

0 

_QC_ = _f(diF/dt_ ); _Tj_ = 150 °C; _VR_ = 400 V; _IF_ ≤ _IF,max_ 

Figure 5 Typ. cap. charge  vs. current slope 

_Zth,jc_ =  f( _t_ P); parameter: _D_ = _t_ P/ _T_ 

Figure 7 Max. transient thermal impedance 

**==> picture [229 x 220] intentionally omitted <==**

**----- Start of picture text -----**<br>
1E-4 =e<br>EL ee<br>1E-7 == =<br>Po 5<br>1E-9<br>100 200 300 400 500 600<br>Vr [V]<br>IR = f(VR); parameter:  Tj<br>**----- End of picture text -----**<br>


Figure 6 Typ. reverse current vs. reverse voltage 

**==> picture [124 x 36] intentionally omitted <==**

**----- Start of picture text -----**<br>
Vp [V]<br>C = f(VR); Tj = 25 °C; f = 1 MHz<br>**----- End of picture text -----**<br>


Figure 8 Typ. capacitance vs. reverse voltage 

Final Datasheet 

Rev. 2.0 , 2018-02-06 

6 

6[th ] Generation CoolSiC[TM ] IDDD08G65C6 

**==> picture [256 x 258] intentionally omitted <==**

**----- Start of picture text -----**<br>
AE<br>5 4<br>Et Sf[|<br>— 4<br>2)ul 3 000Uf/<br>Hope<br>Lee TE<br>0 100 200 300 400 500 600<br>Ver [V]<br>Ps E C = f( V R)<br>**----- End of picture text -----**<br>


Figure 9 Typ. capacitance stored energy 

## 5 Simplified forward characteristic 

_V_  _V_  _R_  _I F TH DIFF F_ Treshold voltage ( _VTH_ ): _VTH_  _T j_  .0001 _T j_  .0766 V 

**==> picture [135 x 110] intentionally omitted <==**

**----- Start of picture text -----**<br>
DIFF<br>TH<br>V; [V]<br>V F = f( I F)<br>**----- End of picture text -----**<br>


Differential resistance ( _RDIFF_ ): 2 _RDIFF_  _T j_  _A_  _T j_  _B_  _T j_  _C_  -6 _A_  1.54 10 -4 _B_  .112 10 -2 _C_  .589 10 

_T_ j [°C]; -55 °C ≤ _T_ j ≤ 175 °C; _I_ F ≤ 8 A 

Figure 10 Equivalent forward current curve 

Figure 11 Mathematical Equation 

Final Datasheet 

Rev. 2.0 , 2018-02-06 

7 

6[th ] Generation CoolSiC[TM ] IDDD08G65C6 

## 6 Package outlines 

**==> picture [73 x 24] intentionally omitted <==**

**----- Start of picture text -----**<br>
--|0.25@)]a)B|C<br>**----- End of picture text -----**<br>


Figure 12 Outlines of the package PG-HDSOP-10-1, dimensions in milimeters 

Final Datasheet 

Rev. 2.0 , 2018-02-06 

8 

**6[th] IDDD08G65C6** 

## IDDD08G65C6 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2018-02-26|Release of final version|



## **erratum@infineon.com** 

## **Information** 

## **www.infineon.com** ). 

## **Warnings** 

9 



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