# Standard Recovery Diode, 1.2 kV, 50 A, Single, 2.15 V, 243 ns, 102 A

![Product image](https://novapart.co/image/farnell:2212799/)

**URL**: https://novapart.co/products/IDB30E120ATMA1/standard-recovery-diode-12-kv-50-a-single-215-v
**SKU**: IDB30E120ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Standard Recovery Rectifier Diodes
**Price**: €0.5750
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Description

Repetitive Reverse Voltage Vrrm Max:1.2kV; Forward Current If(AV):50A; Diode Configuration:Single; Forward Voltage VF Max:2.15V; Reverse Recovery Time trr Max:243ns; Forward Surge Current Ifsm

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | IDB30 |
| Qualification | - |
| Diode Case Style | TO-263 (D2PAK) |
| Diode Configuration | Single |
| Forward Voltage Max | 2.15V |
| Forward Surge Current | 102A |
| Reverse Recovery Time | 243ns |
| Average Forward Current | 50A |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 1.2kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2212799/)

**IDB30E120** 

## **Fast Switching Emitter Controlled Diode               Product Summary** 

## **Feature** 

- 1200 V Emitter Controlled technology 

- Fast recovery 

- Soft switching 

- Low reverse recovery charge 

- Low forward voltage 

- Easy paralleling 

- ***** Qualified according to JEDEC” for target applications 

- RoHS compliant ROHS compliant 

|_V_RRM|||1200||V|
|---|---|---|---|---|---|
|_I_F|||30||A|
|_V_F|||1.65||V|
|_T_jmax|||150||°C|
||PG-TO263-3-2|||||
||1<br>1||2<br>a<br>3<br>3<br>2|||



|**Type**|**Package**|**Ordering Code**|**Marking**|**Pin 1**|**PIN 2**|**PIN 3**|
|---|---|---|---|---|---|---|
|IDB30E120|PG-TO263-3-2                    -|PG-TO263-3-2                    -|D30E120|NC|C|A|



## **Maximum Ratings** , at _T_ j = 25 °C, unless otherwise specified 

|j = 25 °C, unless otherwise specified<br>**Parameter**|j = 25 °C, unless otherwise specified<br>**Symbol**|j = 25 °C, unless otherwise specified<br>**Value**|**Unit**|
|---|---|---|---|
|Repetitive peak reverse voltage|_V_RRM|1200|V|
|Continous forward current<br>_T_C=25°C<br>_T_C=90°C|_I_F|50<br>30|A|
|Surge non repetitive forward current<br>_T_C=25°C,_t_p=10 ms, sine halfwave|_I_FSM|102||
|Maximum repetitive forward current<br>_T_C=25°C,_t_plimited by_T_jmax,_D_=0.5|_I_FRM|76.5||
|Power dissipation<br>_T_C=25°C<br>_T_C=90°C|_P_tot|138<br>66|W|
|Operating and storage temperature|_T_j ,_T_stg|-55...+150|°C|
|Soldering temperature<br>reflow soldering, MSL1|jstg<br>_T_S|260|°C|



Rev.2.3 

2013-07-02 

Page 1 

|**IDB30E120**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cinfineon~~Ee~~|**IDB30E120**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cinfineon~~Ee~~|**IDB30E120**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cinfineon~~Ee~~|**IDB30E120**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cinfineon~~Ee~~|**IDB30E120**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cinfineon~~Ee~~|**IDB30E120**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cinfineon~~Ee~~|
|---|---|---|---|---|---|
|**Characteristics**||||||
|Thermal resistance, junction - case|_R_thJC|-|-|0.9|K/W|
|Thermal resistance, junction - ambient, leaded|_R_thJA|-|-|62||
|SMD version, device on PCB:|_R_thJA|||||
|@ min. footprint||-|-|62||
|@ 6 cm2cooling area1)||-|35|-||



**Electrical Characteristics** , at _T_ j = 25 °C, unless otherwise specified **Parameter Symbol Values Unit** ~~|~~ **min. typ. max.** 

|Reverse leakage current<br>_V_R=1200V,_T_j=25°C<br>_V_R=1200V,_T_j=150°C|_I_R|-<br>-|-<br>-|100<br>2500|µA|
|---|---|---|---|---|---|
|Forward voltage drop<br>_I_F=30A,_T_j=25°C<br>_I_F=30A,_T_j=150°C|_V_F|-<br>-|1.65<br>1.7|2.15<br>-|V|



1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 

Rev.2.3 

2013-07-02 

Page 2 

**IDB30E120** 

|**Dynamic Characteristics**||||||
|---|---|---|---|---|---|
|Reverse recovery time<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=25°C<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=125°C<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=150°C|_t_rr|-<br>-<br>-|243<br>355<br>380|-<br>-<br>-|ns|
|Peak reverse current<br>_V_R=800V,_I_F= 30 A, d_i_F/d_t_=850A/µs,_T_j=25°C<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=125°C<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=150°C|_I_rrm|-<br>-<br>-|23.7<br>28.3<br>29.5|-<br>-<br>-|A|
|Reverse recovery charge<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=25°C<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=125°C<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=150°C|_Q_rr|-<br>-<br>-|2630<br>4700<br>5200|-<br>-<br>-|nC|
|Reverse recovery softness factor<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=25°C<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=125°C<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=150°C|_S_|-<br>-<br>-|6<br>7.4<br>7.5|-<br>-<br>-||



Rev.2.3 

2013-07-02 

Page 3 

**IDB30E120** 

## **1 Power dissipation** 

_P_ tot = _f_ ( _T_ C) 

parameter: Tj ≤ 150°C 

## **2 Diode forward current** 

_I_ F = f( _T_ C) 

parameter: _T_ j ≤ 150°C 

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Rev.2.3 

2013-07-02 

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**IDB30E120** 

## **5 Typ. reverse recovery time** 

_t_ rr = _f_ (d _i_ F/d _t_ ) 

parameter: _V_ R = 800V, _T_ j = 125°C 

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## **6 Typ. reverse recovery charge** 

_Q_ rr= _f_ (d _i_ F/d _t_ ) 

parameter: _V_ R = 800V, _T_ j = 125 °C 

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## **7 Typ. reverse recovery current** 

_I_ rr = _f_ (d _i_ F/d _t_ ) 

parameter: _V_ R = 800V, _T_ j = 125°C 

## **8 Typ. reverse recovery softness factor** 

S = f(d _i_ F/d _t_ ) 

parameter: _V_ R = 800V, _T_ j = 125°C 

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Rev.2.3 

2013-07-02 

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**IDB30E120** 

## **9 Max. transient thermal impedance** 

_Z_ thJC = _f_ ( _t_ p) 

parameter : _D_ = _t_ p/ _T_ 

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Rev.2.3 

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**IDB30E120** 

Rev.2.3 

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**IDB30E120** 

## **Published by** 

**Infineon Technologies AG** _**,**_ 

## **81726 München Published by © 2009 Infineon Technologies AG Infineon Technologies AG All Rights Reserved. 81726 Munich, Germany © 2013 Infineon Technologies AG Attention please! All Rights Reserved.** The information herein is given to describe certain components and shall not be considered as warranted characteristics. 

Terms of delivery and rights to technical change reserved. 

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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, The regarding circuits, descriptions and charts stated herein. information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information Infineon Technologies is an approved CECC manufacturer. regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. **Information** For further information on technology, delivery terms and conditions and prices please contact your nearest 

Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest **Warnings** Infineon Technologies Office ( Due to technical requirements components may contain dangerous substances. **www.infineon.com** ) **.** 

For information on the types in question please contact your nearest Infineon Technologies Office. 

## **Warnings** 

Infineon Technologies Components may only be used in life-support devices or systems  with the express 

written approval of Infineon Technologies, if a failure of such components can reasonably be expected to Due to technical requirements, components may contain dangerous substances. For information on the types cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device in question, please contact the nearest Infineon Technologies Office. or system Life support devices or systems are intended to be implanted in the human body, or to support The Infineon Technologies component described in this Data Sheet may be used in life-support devices or and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health systems and/or automotive, aviation and aerospace applications or systems only with the express written of the user or other persons may be endangered. approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

Rev.2.3 

2013-07-02 

Page 8 



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