# Dual MOSFET, Dual N Channel, 40 V, 100 A, 0.00246 ohm ![Product image](https://novapart.co/image/farnell:4800188/) **URL**: https://novapart.co/products/IAUCN04S7N024HATMA1/dual-mosfet-n-channel-40-v-100-a-000246-ohm **SKU**: IAUCN04S7N024HATMA1 **Manufacturer**: INFINEON **Category**: Semiconductors - Discretes || FETs || Dual MOSFETs **Price**: €0.5340 **Stock**: 10+ **Lead Time**: 190 days (indicative) ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 8Pins | | Channel Type | Dual N Channel | | Product Range | OptiMOS 7 Series | | Qualification | AEC-Q101 | | Transistor Case Style | TDSON | | Operating Temperature Max | 175°C | | Power Dissipation N Channel | 75W | | Power Dissipation P Channel | - | | Drain Source Voltage Vds N Channel | 40V | | Drain Source Voltage Vds P Channel | - | | Continuous Drain Current Id N Channel | 100A | | Continuous Drain Current Id P Channel | - | | Drain Source On State Resistance N Channel | 0.00246ohm | | Drain Source On State Resistance P Channel | - | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:4800188/) **IAUCN04S7N024H** ## Automotive MOSFET ## **OptiMOS[TM] 7 Power-Transistor** ## **Features** - OptiMOSTM power MOSFET for automotive applications **==> picture [67 x 8] intentionally omitted <==** **----- Start of picture text -----**
PG-TDSON-8-56
**----- End of picture text -----**
- N-channel – Enhancement mode – Normal Level - Extended qualification beyond AEC-Q101 - Enhanced electrical testing - Robust design - MSL1 up to 260°C peak reflow - 175°C operating temperature - RoHS compliant - 100% Avalanche tested ## **Potential Applications** General automotive applications. ## **Product Validation** Qualified for automotive applications. Product validation according to AEC-Q101. ## **Product Summary** |**Product Summary**||| |---|---|---| |_V_DS|40|V| |_R_DS(on)|2.46|mΩ| |_I_D(chip limited)|129|A| |**Type**|**Package**|**Marking**| |---|---|---| |IAUCN04S7N024H|PG-TDSON-8-56|7N4N024H| Please read the Important Notice and Warnings at the end of this document Data Sheet **www.infineon.com/mosfets** Rev. 1.0 2025-04-11 **OptiMOS[ TM] 7 Automotive Power MOSFET, 40 V** IAUCN04S7N024H **==> picture [105 x 47] intentionally omitted <==** ## **Table of Contents** |Description
. . . . . . . . . . . .|. . .|. . . . . .|. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|1| |---|---|---|---|---| |Maximum ratings
. . . . . .|. . .|. . . . . .|. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|3| |Thermal characteristics
.|. . .|. . . . . .|. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|4| |Electrical characteristics|. . .|. . . . . .|. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|4| |Electrical characteristics|diagrams||. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|6| |Package outline & footprint||. . . . . .|. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|10| |Revision history
. . . . . . . .|. . .|. . . . . .|. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|11| |Disclaimer
. . . . . . . . . . . . .|. . .|. . . . . .|. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|12| Data Sheet Rev. 1.0 2025-04-11 2 **OptiMOS[ TM] 7 Automotive Power MOSFET, 40 V** IAUCN04S7N024H **==> picture [105 x 47] intentionally omitted <==** ## **Maximum Ratings** at _T_ j = 25°C, unless otherwise specified |**Parameter**|**Symbol**|**Conditions**|**Value**|**Unit**| |---|---|---|---|---| |Continuous drain current|_I_D|_V_GS= 10 V, Chip limitation1,2)|129|A| |||_V_GS= 10 V, DC current|100|| |||_T_a= 100°C,_V_GS= 10 V,_R_thJA
on 2s2p2,3)|20|| |Pulsed drain current2)|_I_D,pulse|_T_C= 25°C,_t_p= 100 μs|349|| |Avalanche energy, single pulse2)|_E_AS|_I_D= 38 A|58|mJ| |Avalanche current, single pulse|_I_AS|–|75|A| |Gate source voltage|_V_GS|–|±20|V| |Power dissipation|_P_tot|_T_C= 25°C|75|W| |Operating temperature|_T_ j|–|-55 ... +175|°C| Data Sheet Rev. 1.0 2025-04-11 3 **OptiMOS[ TM] 7 Automotive Power MOSFET, 40 V** IAUCN04S7N024H **==> picture [105 x 47] intentionally omitted <==** ## **Thermal Characteristics[2)]** |**Thermal Characteristics2)**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Conditions**|**Values**|||**Unit**| ||||**min.**|**typ.**|**max.**|| |Thermal resistance, junction - case|_R_thJC|–|–|–|2|K/W| |Thermal resistance, junction - ambient3)|_R_thJA|–|–|41|–|| ## **Electrical Characteristics** at _T_ j=25 °C, unless otherwise specified |**Parameter**|**Symbol**|**Conditions**|**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**Static Characteristics**||||||| |Drain-source breakdown voltage|_V_(Br)DSS|_V_GS= 0 V,
_I_D= 1 mA|40|–|–|V| |Gate threshold voltage|_V_GS(th)|_V_DS=_V_GS,_I_D= 25 μA|2.2|2.6|3.0|| |Zero gate voltage drain current|_I_DSS|_V_DS= 40 V,_V_GS= 0 V,_T_j= 25°C|–|–|1|μA| |||_V_DS= 40 V,_V_GS= 0 V,
_T_j= 100°C2)|–|–|6|| |Gate-source leakage current|_I_GSS|_V_GS= 20 V,_V_DS= 0 V|–|–|100|nA| |Drain-source on-state resistance|_R_DS(on)|_V_GS= 7 V,_I_D= 25 A|–|2.62|3.01|mΩ| |||_V_GS= 10 V,_I_D= 50 A|–|2.17|2.46|| |Gate resistance2)|_R_G|–|–|1.4|–|Ω| Data Sheet Rev. 1.0 2025-04-11 4 **OptiMOS[ TM] 7 Automotive Power MOSFET, 40 V** IAUCN04S7N024H **==> picture [105 x 47] intentionally omitted <==** |**Parameter**|**Symbol**|**Conditions**|**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---| ||||min.|typ.|max.|| |**Dynamic Characteristics2)**||||||| |Input capacitance|_C_iss|_V_GS= 0 V,_V_DS= 20 V,_f_= 1 MHz|–|1712|2226|pF| |Output capacitance|_C_oss||–|997|1296|| |Reverse transfer capacitance|_C_rss||–|36|54|| |Turn-on delay time|_t_d(on)|_V_DD= 20 V,_V_GS= 10 V,
_I_D= 50 A,_R_G= 3.5 Ω|–|6|–|ns| |Rise time|_t_r||–|12|–|| |Turn-off delay time|_t_d(off)||–|13|–|| |Fall time|_t_f||–|15|–|| ## **Gate Charge Characteristics[2)]** |**Gate Charge Characteristics2)**||||||| |---|---|---|---|---|---|---| |Gate to source charge|_Q_gs|_V_DD= 20 V,_I_D= 50 A,
_V_GS= 0 to 10 V|–|7.4|9.6|nC| |Gate to drain charge|_Q_gd||–|5.1|7.7|| |Gate charge total|_Q_g||–|25|32|| |Gate plateau voltage|_V_plateau||–|4.3|–|V| ## **Reverse Diode** |**Reverse Diode**||||||| |---|---|---|---|---|---|---| |Diode continuous forward current2)|_I_S|_T_C= 25°C|–|–|100|A| |Diode pulse current2)|_I_S,pulse|_T_C= 25°C,_t_ p= 100 μs|–|–|349|| |Diode forward voltage|_V_SD|_V_GS= 0 V,_I_F= 50 A,_T_ j= 25°C|–|0.87|1.02|V| |Reverse recovery time2)|_t_rr|_V_R= 20 V,_I_F= 50 A
d_i_F/dt = 100 A/μs|–|24|36|ns| |Reverse recovery charge2)|_Q_rr||–|9|18|nC| 1) Practically the current is limited by the overall system design including the customer-specific PCB. 2) The parameter is not subject to production testing – specified by design. 3) Device on 2s2p FR4 PCB defined in accordance with JEDEC standards (JESD51-5, -7). PCB is vertical in still air. Data Sheet Rev. 1.0 5 2025-04-11 **OptiMOS[ TM] 7 Automotive Power MOSFET, 40 V** IAUCN04S7N024H **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics diagrams 1 Power dissipation 2 Drain current** **==> picture [507 x 316] intentionally omitted <==** **3 Safe operating area 4 Max. transient thermal impedance** **==> picture [507 x 316] intentionally omitted <==** Data Sheet Rev. 1.0 2025-04-11 6 **OptiMOS[ TM] 7 Automotive Power MOSFET, 40 V** IAUCN04S7N024H **==> picture [105 x 47] intentionally omitted <==** ## **5 Typ. output characteristics** ## **6 Typ. drain-source on-state resistance** **==> picture [507 x 316] intentionally omitted <==** ## **7 Typ. transfer characteristics** ## **8 Typ. drain-source on-state resistance** **==> picture [507 x 316] intentionally omitted <==** Data Sheet Rev. 1.0 7 2025-04-11 **OptiMOS[ TM] 7 Automotive Power MOSFET, 40 V** IAUCN04S7N024H **==> picture [105 x 47] intentionally omitted <==** ## **9 Typ. gate threshold voltage 10 Typ. capacitances** **==> picture [507 x 316] intentionally omitted <==** ## **11 Typ. forward diode characteristics 12 Typ. avalanche characteristics** **==> picture [507 x 316] intentionally omitted <==** Data Sheet Rev. 1.0 2025-04-11 8 **OptiMOS[ TM] 7 Automotive Power MOSFET, 40 V** IAUCN04S7N024H ## **13 Typical avalanche energy** ## **15 Typ. gate charge** ## **14 Drain-source breakdown voltage** ## **16 Gate charge waveforms** Data Sheet Rev. 1.0 2025-04-11 9 **OptiMOS[ TM] 7 Automotive Power MOSFET, 40 V** IAUCN04S7N024H ## **Package Outline** ## **Footprint** ## **Packaging** Data Sheet Rev. 1.0 2025-04-11 10 **OptiMOS[ TM] 7 Automotive Power MOSFET, 40 V** IAUCN04S7N024H **==> picture [105 x 47] intentionally omitted <==** ## **Revision History** |**Revision History**||| |---|---|---| |**Revision**|**Date**|**Changes**| |Revision 1.0|2025-04-11|Final Data Sheet| Data Sheet Rev. 1.0 2025-04-11 11 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. ## **Edition 2025-04-11** ## **IMPORTANT NOTICE** **Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics **Infineon Technologies AG** ("Beschaffenheitsgarantie"). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby **© 2025 Infineon Technologies AG** disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of **All Rights Reserved.** intellectual property rights of any third party. In addition, any information given in this document is subject **Do you have any questions about any** to customer's compliance with its obligations stated in this **aspect of this document?** document and any applicable legal requirements, norms and standards concerning customer's products and any use of the **Email: erratum@infineon.com** product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended **Document reference** for technically trained staff. It is the responsibility of **IAUCN04S7N024H-Data-Sheet-10-Infineon** customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 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