# Dual MOSFET, Dual N Channel, 40 V, 100 A, 0.00504 ohm ![Product image](https://novapart.co/image/farnell:4800189/) **URL**: https://novapart.co/products/IAUCN04S7L025AHATMA1/dual-mosfet-n-channel-40-v-100-a-000504-ohm **SKU**: IAUCN04S7L025AHATMA1 **Manufacturer**: INFINEON **Category**: Semiconductors - Discretes || FETs || Dual MOSFETs **Price**: €0.5350 **Stock**: 1000+ **Lead Time**: 190 days (indicative) ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 8Pins | | Channel Type | Dual N Channel | | Product Range | OptiMOS 7 Series | | Qualification | AEC-Q101 | | Transistor Case Style | TDSON | | Operating Temperature Max | 175Β°C | | Power Dissipation N Channel | 75W | | Power Dissipation P Channel | - | | Drain Source Voltage Vds N Channel | 40V | | Drain Source Voltage Vds P Channel | - | | Continuous Drain Current Id N Channel | 100A | | Continuous Drain Current Id P Channel | - | | Drain Source On State Resistance N Channel | 0.00504ohm | | Drain Source On State Resistance P Channel | - | ## Datasheet πŸ“„ [Download PDF](https://novapart.co/datasheet/farnell:4800189/) **IAUCN04S7L025AH** ## Automotive MOSFET ## **Optimos[TM] 7 Power-Transistor** ## **Features** - OptiMOSTM power MOSFET for automotive applications **==> picture [67 x 8] intentionally omitted <==** **----- Start of picture text -----**
PG-TDSON-8-57
**----- End of picture text -----**
- N-channel – Enhancement mode – Logic Level - Extended qualification beyond AEC-Q101 - Enhanced electrical testing - Robust design - MSL1 up to 260Β°C peak reflow - 175Β°C operating temperature - RoHS compliant - 100% Avalanche tested ## **Potential Applications** General automotive applications. ## **Product Validation** Qualified for automotive applications. Product validation according to AEC-Q101. ## **Product Summary** |**Product Summary**||| |---|---|---| |_V_DS|40|V| |_R_DS(on), M1|2.56|mΞ©| |_R_DS(on), M2|5.04|mΞ©| |_I_D(chip limited) M1|127|A| |_I_D(chip limited) M2|65|A| ## **Pin Assignment** |**Pin Assignment**||| |---|---|---| |**Function**|**Symbol**|**Pin**| |Gate M1|G1|1| |Source M1, Drain M2|S1, D2|2, 3| |Gate M2|G2|4| |Source M2|S2|5, 6| |Drain M1|D1|7, 8| |**Type**|**Package**|**Marking**| |---|---|---| |IAUCN04S7L025AH|PG-TDSON-8-57|7N4L02AH| Please read the Important Notice and Warnings at the end of this document Data Sheet Rev. 1.0 2025-04-11 **www.infineon.com/mosfets** **Optimos[ TM] 7 Automotive Power MOSFET, 40 V** IAUCN04S7L025AH **==> picture [105 x 47] intentionally omitted <==** ## **Table of Contents** |Description
. . . . . . . . . . . .|. . .|. . . . . .|. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|1| |---|---|---|---|---| |Maximum ratings
. . . . . .|. . .|. . . . . .|. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|3| |Thermal characteristics
.|. . .|. . . . . .|. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|4| |Electrical characteristics|. . .|. . . . . .|. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|4| |Electrical characteristics|diagrams||. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|6| |Package outline & footprint||. . . . . .|. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|10| |Revision history
. . . . . . . .|. . .|. . . . . .|. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|11| |Disclaimer
. . . . . . . . . . . . .|. . .|. . . . . .|. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|12| Data Sheet Rev. 1.0 2025-04-11 2 **Optimos[ TM] 7 Automotive Power MOSFET, 40 V** IAUCN04S7L025AH **==> picture [105 x 47] intentionally omitted <==** ## **Maximum Ratings** at _T_ j = 25Β°C, unless otherwise specified |**Parameter**|**Symbol**|**Conditions**|**Value**|**Value**|**Unit**| |---|---|---|---|---|---| ||||**M1**|**M2**|| |Continuous drain current|_I_D|_V_GS= 10 V, Chip
limitation1,2)|127|65|A| |||_V_GS= 10 V, DC current|100|65|| |||_T_a= 100Β°C,_V_GS= 10 V,_R_thJA
on 2s2p2,3)|20|14|| |Pulsed drain current2)|_I_D,pulse|_T_C= 25Β°C,_t_p= 100 ΞΌs|349|149|| |Avalanche energy, single pulse2)|_E_AS|_I_D, M1= 38 A,_I_D, M2= 14 A|58|25|mJ| |Avalanche current, single pulse|_I_AS|–|75|27|A| |Gate source voltage|_V_GS|–|Β±16||V| |||Limited to duty factor of 1%|+20||| |Power dissipation|_P_tot|_T_C= 25Β°C|75|40|W| |Operating temperature|_T_j|–|-55 ... +175||Β°C| Data Sheet Rev. 1.0 2025-04-11 3 **Optimos[ TM] 7 Automotive Power MOSFET, 40 V** IAUCN04S7L025AH **==> picture [105 x 47] intentionally omitted <==** ## **Thermal Characteristics[2)]** |**Parameter**|**M1/M2**|**Symbol**|**Conditions**|**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**min.**|**typ.**|**max.**|| |Thermal resistance, junction -
case|M1|_R_thJC|–|–|–|2|K/W| ||M2|||–|–|3.7|| |Thermal resistance, junction -
ambient3)|M1|_R_thJA|–|–|41|–|| ||M2|||–|43|–|| ## **Electrical characteristics** at _T_ j=25 Β°C, unless otherwise specified |**Parameter**|**M1/M2**|**Symbol**|**Conditions**|**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**min.**|**typ.**|**max.**|| |**Static characteristics**|||||||| |Drain-source breakdown
voltage|M1|_V_(Br)DSS|_V_GS= 0 V,
_I_D= 1 mA|40|–|–|V| ||M2||||||| |Gate threshold voltage|M1|_V_GS(th)|_V_GS=_V_DS,_I_D= 25 ΞΌA|1.2|1.5|1.8|| ||M2||_V_GS=_V_DS,_I_D= 10 ΞΌA|1.2|1.5|1.8|| |Zero gate voltage drain current|M1|_I_DSS|_V_DS= 40 V,_V_GS= 0 V,
_T_j= 25Β°C2)|–|–|1|ΞΌA| ||M2||||||| ||M1||_V_DS= 40 V,_V_GS= 0 V,
_T_j= 100Β°C2)|–|–|6|| ||M2|||–|–|3|| |Gate-source leakage current|M1|_I_GSS|_V_GS= 16 V,_V_DS= 0 V|–|–|100|nA| ||M2||||||| |Drain-source on-state
resistance|M1|_R_DS(on)|_V_GS= 4.5 V,_I_D= 50 A|–|3.04|3.43|mΞ©| ||M2||_V_GS= 4.5 V,_I_D= 30 A|–|6.46|7.49|| ||M1||_V_GS= 10 V,_I_D= 50 A|–|2.34|2.56|| ||M2||_V_GS= 10 V,_I_D= 30 A|–|4.46|5.04|| |Gate resistance2)|M1|_R_G|–|–|1.4|–|Ξ©| ||M2||–|–|2|–|| - 1) Practically the current is limited by the overall system design including the customer-specific PCB. - 2) The parameter is not subject to production testing – specified by design. > 3) Device on 2s2p FR4 PCB defined in accordance with JEDEC standards (JESD51-5, -7). PCB is vertical in still air. Data Sheet Rev. 1.0 2025-04-11 4 **Optimos[ TM] 7 Automotive Power MOSFET, 40 V** IAUCN04S7L025AH **==> picture [105 x 47] intentionally omitted <==** |**Parameter**|**M1/M2 **|**Symbol**|**Conditions**|**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**min.**|**typ.**|**max.**|| |**Dynamic Characteristics2)**|||||||| |Input capacitance|M1|_C_iss|_V_GS= 0 V,_V_DS= 20 V,
_f_= 1 MHz|–|1937|2518|pF| ||M2|||–|704|915|| |Output capacitance|M1|_C_oss||–|970|1261|| ||M2|||–|349|454|| |Reverse transfer capacitance|M1|_C_oss||–|35|53|| ||M2|||–|16|24|| |Turn-on delay time|M1|_t_d(on)|_V_DD= 20 V,_V_GS= 10 V,
_I_D, M1= 50 A,_I_D, M2= 30 A,
_R_G= 3.5 Ξ©|–|4.5|–|ns| ||M2|||–|2.5|–|| |Rise time|M1|_t_r||–|10|–|| ||M2|||–|6|–|| |Turn-off delay time|M1|_t_d(off)||–|21|–|| ||M2|||–|9|–|| |Fall time|M1|_t_f||–|25|–|| ||M2|||–|12|–|| |**Gate Charge Characteristics2)**|||||||| |Gate to source charge|M1|_Q_gs|_V_DD= 20 V,_I_D, M1= 50 A,
_I_D, M2= 30 A,_V_GS= 0 to 10 V|–|5.5|7.2|nC| ||M2|||–|2.1|2.7|| |Gate to drain charge|M1|_Q_gd||–|5.1|7.7|| ||M2|||–|1.9|2.9|| |Gate charge total|M1|_Q_g||–|29|38|| ||M2|||–|11|14|| |Gate plateau voltage|M1|_V_plateau||–|2.8|–|V| ||M2|||–|3|–|| |**Reverse Diode**|||||||| |Diode continuous forward
current2)|M1|_I_S|_T_C= 25Β°C|–|–|100|A| ||M2|||–|–|65|| |Diode pulse current2)|M1|_I_S,pulse|_T_C= 25Β°C,_t_p= 100 ΞΌs|–|–|349|| ||M2|||–|–|149|| |Diode forward voltage|M1|_V_SD|_V_GS= 0 V,_I_F, M1= 50 A,
_I_F, M2= 30 A,_T_j= 25Β° C|–|0.87|1.02|V| ||M2|||–|0.87|1.02|| |Reverse recovery time2)|M1|_t_rr|_V_R= 20 V,_I_F= 50 A
d_i_F/dt = 100 A/ΞΌs|–|23|35|ns| |Reverse recovery charge2)||_Q_rr||–|8|16|nC| |Reverse recovery time2)|M2|_t_rr|_V_R= 20 V,_I_F= 50 A
d_i_F/dt = 100 A/ΞΌs|–|6|9|ns| |Reverse recovery charge2)||_Q_rr||–|0.5|1|nC| Data Sheet Rev. 1.0 2025-04-11 5 **Optimos[ TM] 7 Automotive Power MOSFET, 40 V** IAUCN04S7L025AH **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics diagrams 1 Power dissipation M1 2 Power dissipation M2** **==> picture [507 x 316] intentionally omitted <==** ## **3 Drain current M1** ## **4 Drain current M2** **==> picture [507 x 316] intentionally omitted <==** Data Sheet Rev. 1.0 2025-04-11 6 **Optimos[ TM] 7 Automotive Power MOSFET, 40 V** IAUCN04S7L025AH **==> picture [105 x 47] intentionally omitted <==** ## **5 Safe operating area M1 6 Safe operating area M2** **==> picture [507 x 316] intentionally omitted <==** ## **7 Max. transient thermal impedance M1 8 Max. transient thermal impedance M2** **==> picture [507 x 316] intentionally omitted <==** Data Sheet 7 Rev. 1.0 2025-04-11 **Optimos[ TM] 7 Automotive Power MOSFET, 40 V** IAUCN04S7L025AH **==> picture [105 x 47] intentionally omitted <==** ## **9 Typ. output characteristics M1 10 Typ. output characteristics M2** **==> picture [507 x 316] intentionally omitted <==** ## **11 Typ. drain-source on-state resistance M1 12 Typ. drain-source on-state resistance M2** **==> picture [507 x 316] intentionally omitted <==** Data Sheet Rev. 1.0 2025-04-11 8 **Optimos[ TM] 7 Automotive Power MOSFET, 40 V** IAUCN04S7L025AH **==> picture [105 x 47] intentionally omitted <==** ## **13 Typ. transfer characteristics M1 14 Typ. transfer characteristics M2** **==> picture [507 x 316] intentionally omitted <==** ## **15 Typ. drain-source on-state resistance M1 16 Typ. drain-source on-state resistance M2** **==> picture [507 x 316] intentionally omitted <==** Data Sheet Rev. 1.0 2025-04-11 9 **Optimos[ TM] 7 Automotive Power MOSFET, 40 V** IAUCN04S7L025AH **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics diagrams** ## **17 Typ. gate threshold voltage M1** ## **18 Typ. gate threshold voltage M2** **==> picture [507 x 316] intentionally omitted <==** **19 Typ. capacitances M1 20 Typ. capacitances current M2** **==> picture [507 x 316] intentionally omitted <==** Data Sheet Rev. 1.0 2025-04-11 10 **Optimos[ TM] 7 Automotive Power MOSFET, 40 V** IAUCN04S7L025AH **==> picture [105 x 47] intentionally omitted <==** ## **21 Typ. forward diode characteristics M1** ## **22 Typ. forward diode characteristics M2** **==> picture [507 x 316] intentionally omitted <==** ## **23 Typ. avalanche characteristics M1 24 Typ. avalanche characteristics M2** **==> picture [507 x 316] intentionally omitted <==** Data Sheet Rev. 1.0 2025-04-11 11 **Optimos[ TM] 7 Automotive Power MOSFET, 40 V** IAUCN04S7L025AH **==> picture [105 x 47] intentionally omitted <==** ## **25 Typical avalanche energy M1** ## **26 Typical avalanche energy M2** **==> picture [507 x 316] intentionally omitted <==** ## **27 Drain-source breakdown voltage M1** ## **28 Drain-source breakdown voltage M2** **==> picture [507 x 316] intentionally omitted <==** Data Sheet Rev. 1.0 2025-04-11 12 **Optimos[ TM] 7 Automotive Power MOSFET, 40 V** IAUCN04S7L025AH ## **29 Typ. gate charge M1** ## **30 Typ. gate charge M2** ## **31 Gate charge waveforms M1, M2** Data Sheet Rev. 1.0 2025-04-11 13 **Optimos[ TM] 7 Automotive Power MOSFET, 40 V** IAUCN04S7L025AH ## **Package Outline** ## **Footprint** ## **Packaging** Data Sheet Rev. 1.0 2025-04-11 14 **Optimos[ TM] 7 Automotive Power MOSFET, 40 V** IAUCN04S7L025AH **==> picture [105 x 47] intentionally omitted <==** ## **Revision History** |**Revision History**||| |---|---|---| |**Revision**|**Date**|**Changes**| |Revision 1.0|2025-04-11|Final Data Sheet| Data Sheet Rev. 1.0 2025-04-11 15 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. ## **Edition 2025-04-11** ## **IMPORTANT NOTICE** **Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics **Infineon Technologies AG** ("Beschaffenheitsgarantie"). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby **Β© 2025 Infineon Technologies AG** disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of **All Rights Reserved.** intellectual property rights of any third party. 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