HV7361GA-G

## **HV7360/HV7361** 

## **High-Speed ±100V 2.5A Two-or-Three-Level Ultrasound Pulsers** 

## **Features** 

- High-Density Integration AC-coupled Pulser 

- 0V to ±100V Output Voltage 

- ±2.5A Source and Sink Minimum Pulse Current 

- Up to 35 MHz Operating Frequency 

- 2 ns Matched Delay Times 

- 2.5V, 3.3V or 5V CMOS Logic Interface 

- Built-in Two-terminal Low-noise Interface for HV7361 

- Low Power Consumption and No Floating Power Supply Rails or Decoupling Capacitors 

## **Applications** 

- Medical Ultrasound Imaging 

- Piezoelectric Transducer Drivers 

- Ultrasound Industrial NDT 

- Pulse Waveform Generator 

## **General Description** 

The HV7360/HV7361 are high-voltage and high-speed pulse generators with built-in, fast return-to-zero damping Field-Effect Transistors (FETs). An added feature to HV7361 is an integrated two-terminal low-noise T/R switch. These integrated circuits are designed not only for portable medical ultrasound image devices but also for NDT and test equipment applications. 

Both the HV7360/HV7361 are composed of controller logic interface circuits, level translators and AC-coupled Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) gate drivers. They also have high-voltage and high-current P-channel and N-channel MOSFETs as output stages. 

The peak output currents of each channel are guaranteed to be over ±2.5A with up to ±100V of pulse swing. The AC coupling topology for the gate drivers not only saves two floating voltage supplies but also makes the PCB layout easier. 

## **Package Type** 

**22-lead CABGA** (Top view) 

See Table 2-1 for pad information. 

DS20005570C-page 1 

 2017 Microchip Technology Inc. 

**HV7360/HV7361** 

## **HV7360 Typical Application Circuit** 

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+10V +10V<br>VDD VH VL3 0 to +100V<br>SP1<br>+2.5/3.3V VLL<br>PE DP1<br>HVOUT<br>DN1<br>INA<br>0 to -100V<br>INB<br>SN1<br>2.5/3.3V<br>Logic Input SP2<br>INC<br>DP2<br>IND<br>DN2<br>SN2<br>GND VSS VL1 VL2<br>**----- End of picture text -----**<br>


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+/-100V 2.5A Three-level RTZ Transmit Pulsers<br>**----- End of picture text -----**<br>


## **HV7361 Typical Application Circuit** 

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+10V +10V<br>0 to +100V<br>VDD VH VL3 SP1<br>+2.5/3.3V VLL<br>PE DP1<br>DN1<br>INA<br>0 to -100V<br>INB<br>SN1<br>2.5/3.3V<br>Logic Input SP2<br>INC<br>DP2<br>IND<br>DN2<br>SN2<br>XDCR<br>GND VSS VL1 VL2 RX T/R SW<br>to Rx LNA<br>**----- End of picture text -----**<br>


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+/-100V 2.5A Three-level RTZ Transmit Pulsers with T/R Switch<br>**----- End of picture text -----**<br>


DS20005570C-page 2 

 2017 Microchip Technology Inc. 

**HV7360/HV7361** 

## **1.0 ELECTRICAL CHARACTERISTICS** 

## **Absolute Maximum Ratings †** 

Chip Power Supply Voltage, VDD–VSS .................................................................................................... –0.5 to +12.5V Output High Supply Voltage, VH ......................................................................................................VL–0.5 to VDD+0.5V Output Low Supply Voltage, VL..................................................................................................... VSS–0.5V to VH+0.5V Low-side Supply Voltage, VSS.....................................................................................................................–6V to +0.5V Differential High Voltage, VSP1–VSN1, VSP2–VSN2 ............................................................................................... +220V Positive High Voltage, VSP1,2 ................................................................................................................. –0.5V to +110V Negative High Voltage, VSN1,2 ............................................................................................................... +0.5V to –110V All Logic Input Voltages.............................................................................................................VSS–0.5V to GND +5.5V Rx to XDCR Differential Drop ............................................................................................................................... ±140V Coupling Capacitor Breakdown Voltage................................................................................................................ ±110V Maximum Junction Temperature, TJ ......................................................................................................................125°C Operating Ambient Temperature, TA ......................................................................................................–40°C to +85°C 

**† Notice:** Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. 

## **OPERATING SUPPLY VOLTAGES AND CURRENT** 

**Electrical Specifications:** GND = 0V, VH = VDD = +10V, VL = VSS = 0V, VPE = 3.3V, VPP = +100V, VNN = –100V, TA = 25°C unless otherwise specified. 

|**OPERATING SUPPLY VOLTAGES AND CURRENT**|**OPERATING SUPPLY VOLTAGES AND CURRENT**|**OPERATING SUPPLY VOLTAGES AND CURRENT**|**OPERATING SUPPLY VOLTAGES AND CURRENT**|**OPERATING SUPPLY VOLTAGES AND CURRENT**|**OPERATING SUPPLY VOLTAGES AND CURRENT**|**OPERATING SUPPLY VOLTAGES AND CURRENT**|
|---|---|---|---|---|---|---|
|**Electrical Specifications:**GND = 0V, VH= VDD= +10V, VL= VSS= 0V, VPE= 3.3V, VPP= +100V, VNN= –100V,<br>TA= 25°C unless otherwise specified.|||||||
|**Parameter**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**|
|Logic SupplyVoltage Range|VLL|2.25|—|3.63|V||
|SupplyVoltage|VDD-VSS|4.75|—|11.5|V|4V ≤ VDD≤ 11.5V|
|Low Side SupplyVoltage|VSS|–5.5|—|0|V||
|Gate Drive High-side Voltage|VH|VSS+4|—|VDD|V|VH–VL≥ 4V|
|Gate Drive Low-side Voltage|VL|VSS|—|VDD–4|V||
|Output Positive High Voltage|VSP1,2|0|—|100|V||
|Output Negative High Voltage|VSN1,2|–100|—|0|V||
|VDDQuiescent Current|IDDQ|—|50|—|μA|No input transitions, PE = 0|
|VHQuiescent Current|IHQ|—|2|—|μA||
|VDDQuiescent Current|IDDQ|—|1|—|mA|No input transitions, PE = 1|
|VHQuiescent Current|IHQ|—|2|—|μA||
|VDDAverage Current|IDD|—|4|—|mA|One channel on at 5 MHz, no<br>load|
|VHAverage Current|IH|—|10|—|mA||
|Input Logic Voltage High|VIH|VPE–0.3|—|VPE|V|For logic inputs INA, INB, INC<br>and IND|
|Input Logic Voltage Low|VIL|0|—|0.3|V||
|Input Logic Current High|IIH|—|—|1|μA||
|Input Logic Current Low|IIL|—|—|1|μA||
|PE Input Logic Voltage High|VPEH|1.7|3.3|5.25|V|For logic input PE|
|PE Input Logic Voltage Low|VPEL|0|—|0.3|V||
|PE Input Impedance to GND|RINPE|100|—|—|kΩ||



DS20005570C-page 3 

 2017 Microchip Technology Inc. 

## **HV7360/HV7361** 

## **AC ELECTRICAL CHARACTERISTICS** 

**Electrical Specifications** : GND = 0V, VH = VDD = +10V, VL = VSS = 0V, VPE = 3.3V, VPP = +100V, VNN = –100V, TA = 25°C unless otherwise specified. 

|**AC ELECTRICAL CHARACTERISTICS**|**AC ELECTRICAL CHARACTERISTICS**|**AC ELECTRICAL CHARACTERISTICS**|**AC ELECTRICAL CHARACTERISTICS**|**AC ELECTRICAL CHARACTERISTICS**|**AC ELECTRICAL CHARACTERISTICS**|**AC ELECTRICAL CHARACTERISTICS**|
|---|---|---|---|---|---|---|
|**Electrical Specifications**: GND = 0V, VH= VDD= +10V, VL= VSS= 0V, VPE= 3.3V, VPP= +100V, VNN= –100V,<br>TA= 25°C unless otherwise specified.|||||||
|**Parameter**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**|
|Input or PE Rise and Fall Time|tirf|—|—|10|ns|Logic input edge speed requirement|
|Input to Output Delay|td1–4|—|7.5|—|ns|RLOAD= 1Ω|
|Output Rise and Fall Time|tr/f1–2|—|9.5|—|ns|CLOAD= 330pF, RLOAD= 2.5 kΩ|
|Rise and Fall Time Matching|∆trf|—|2|—|ns|Channel to channel|
|Propagation Matching|∆tdC2C|—|1|—|||
|Propagation DelayMatching|∆tdD2D|—|±2|—|ns|Device to device delaymatch|
|PE On-time|tPE–ON|—|—|5|µs|VPE= 1.7 ~ 5.25V,<br>VDD= 7.5 ~ 11.5V,<br>–20 ~ 85°C|
|PE Off-time|tPE–OFF|—|—|4|||
|Output to MOSFET Gate Cap|COG|—|10|—|nF|100V X7S|
|VHto VL3DecouplingCap|CVH|—|0.22|—|µF|16V X7R|



## **ELECTRICAL CHARACTERISTICS** 

**Electrical Specifications** : GND = 0V, VH = VDD = +10V, VL = VSS = 0V, VPE = 3.3V, VPP = +100V, VNN = –100V, TA = 25°C unless otherwise specified. 

|**ELECTRICAL CHARACTERISTICS**|**ELECTRICAL CHARACTERISTICS**|**ELECTRICAL CHARACTERISTICS**|**ELECTRICAL CHARACTERISTICS**|**ELECTRICAL CHARACTERISTICS**|**ELECTRICAL CHARACTERISTICS**|**ELECTRICAL CHARACTERISTICS**|
|---|---|---|---|---|---|---|
|**Electrical Specifications**: GND = 0V, VH= VDD= +10V, VL= VSS= 0V, VPE= 3.3V, VPP= +100V, VNN= –100V,<br>TA= 25°C unless otherwise specified.|||||||
|**Parameter**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**|
|**PULSER AND DAMPING P-CHANNEL MOSFET**|||||||
|**DC PARAMETER**|||||||
|Drain-to-source Breakdown Voltage|BVDSS|–200|—|—|V|VGS= 0V, ID= –2 mA|
|Gate Threshold Voltage|VGS(th)|–1|—|–2.4|V|VGS= VDS, ID= –1 mA|
|Change in VGS(th)with Temperature|∆VGS(th)|—|—|4.5|mV/°C|VGS= VDS, ID= –1 mA|
|Gate-to-source Shunt Resistor|RGS|10|—|50|kΩ|IGS= 100µA, if applied|
|Gate-to-source Zener Voltage|VZGS|13.2|—|25|V|IGS= –2 mA, if applied|
|Zero-gate Voltage Drain Current|IDSS|—|—|–10|μA|VDS= Maximum rating,<br>VGS= 0V|
|||—|—|–1|mA|VDS= 0.8 maximum rating,<br>VGS= 0V, TA= 125°C|
|ON-state Drain Current|ID(ON)|–1.2|—|—|A|VGS= –5V, VDS= –25V|
|||–2.3|–2.5|—||VGS= –10V, VDS= –50V|
|Static Drain-to-source ON-state<br>Resistance|RDS(ON)|—|—|8.5|Ω|VGS= –5V, ID= –150 mA|
|||—|—|7||VGS= –10V, ID= –1A|
|Change in RDS(ON)with Temperature|∆RDS(ON)|—|—|1|%/°C|VGS= –10V, ID= –1 mA|
|**AC PARAMETER**|||||||
|Forward Transconductance|GFS|400|—|—|mmho|VDS= –25V, ID= –500 mA|
|Input Capacitance|CISS|—|75|—|pF|VGS= 0V,<br>VDS= –25V,<br>f = 1 MHz|
|Common Source Output Capacitance|COSS|—|21|—|||
|Reverse Transfer Capacitance|CRSS|—|6.5|—|||
|**DIODE PARAMETER**|||||||
|Diode Forward Voltage Drop|VSBD|—|—|1.8|V|VGS= 0V, ISD= 500 mA|
|Reverse RecoveryTime of BodyDiode|trrBD|—|300|—|ns||
|**PULSER AND DAMPING N-CHANNEL MOSFET**|||||||
|**DC PARAMETER**|||||||
|Drain-to-source Breakdown Voltage|BVDSS|200|—|—|V|VGS= 0V, ID= 2 mA|
|Gate Threshold Voltage|VGS(th)|1|—|2.4|V|VGS= VDS, ID= 1 mA|



DS20005570C-page 4 

 2017 Microchip Technology Inc. 

**HV7360/HV7361** 

## **ELECTRICAL CHARACTERISTICS (CONTINUED)** 

**Electrical Specifications** : GND = 0V, VH = VDD = +10V, VL = VSS = 0V, VPE = 3.3V, VPP = +100V, VNN = –100V, TA = 25°C unless otherwise specified. 

|**ELECTRICAL CHARACTERISTICS(CONTINUED)**|**ELECTRICAL CHARACTERISTICS(CONTINUED)**|**ELECTRICAL CHARACTERISTICS(CONTINUED)**|**ELECTRICAL CHARACTERISTICS(CONTINUED)**|**ELECTRICAL CHARACTERISTICS(CONTINUED)**|**ELECTRICAL CHARACTERISTICS(CONTINUED)**|**ELECTRICAL CHARACTERISTICS(CONTINUED)**|
|---|---|---|---|---|---|---|
|**Electrical Specifications**: GND = 0V, VH= VDD= +10V, VL= VSS= 0V, VPE= 3.3V, VPP= +100V, VNN= –100V,<br>TA= 25°C unless otherwise specified.|||||||
|**Parameter**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**|
|Change in VGS(th)with Temperature|∆VGS(th)|—|—|–4.5|mV/°C|VGS= VDS, ID= 1 mA|
|Gate-to-source Shunt Resistor|RGS|10|—|50|kΩ|IGS= 100µA|
|Gate-to-source Zener Voltage|VZGS|13.2|—|25|V|IGS= 2 mA|
|Zero Gate Voltage Drain Current|IDSS|—|—|10|μA|VDS= Maximum rating,<br>VGS= 0V|
|||—|—|1|mA|VDS= 0.8 maximum rating,<br>VGS= 0V, TA= 125°C|
|ON-state Drain Current|ID(ON)|1.3|—|—|A|VGS= 5V, VDS= 25V|
|||2.3|2.5|—||VGS= 10V, VDS= 50V|
|Static Drain-to-source ON-state<br>Resistance|RDS(ON)|—|—|6.5|Ω|VGS= 5V, ID= 150 mA|
|||—|—|6||VGS= 10V, ID= 1A|
|Change in RDS(ON)with Temperature|∆RDS(ON)|—|—|1|%/°C|VGS= 10V, ID= 1A|
|**AC PARAMETER**|||||||
|Forward Transconductance|GFS|400|—|—|mmho|VDS= 25V, ID= 500 mA|
|Input Capacitance|CISS|—|56|—|pF|VGS= 0V,<br>VDS= 25V,<br>f = 1 MHz|
|Common Source Output Capacitance|COSS|—|13|—|||
|Reverse Transfer Capacitance|CRSS|—|2|—|||
|**DIODE PARAMETER**|||||||
|Diode Forward Voltage Drop|VSBD|—|—|1.8|V|VGS= 0V, ISD= 500 mA|
|Reverse RecoveryTime of BodyDiode|trrBD|—|300|—|ns||



## **HV7361 T/R SWITCH CHARACTERISTICS** 

|**Parameter**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**|
|---|---|---|---|---|---|---|
|Breakdown Voltage from XDCR to Rx|BVA–B|±130|—|—|V|IA–B= ±1 mA|
|Switch-on Resistance from XDCR to Rx|RSW|—|15|—|Ω|IA–B= ±5 mA|
|VA–BTripPoint to Turn Off|VTRIP|—|±1|±2|V||
|Switch Turn-off Voltage|VOFF|—|±2|—|V|IA–B= ±1 mA|
|Switch-off Current|IA–B(OFF)|—|±200|±300|µA|VA–B= ±130V|
|Peak SwitchingCurrent|IPEAK|—|±60|—|mA||
|Turn-off Time|TOFF|—|—|20|ns||
|Turn-on Time|TON|—|—|20|ns||
|Switch-on Capacitance from A to B or<br>B to A|CSW(ON)|—|21|—|pF|SW = On|
|Switch-off Capacitance from A to B or<br>B to A|CSW(OFF)|—|15|—|pF|VSW= 25V|
|Small Signal Bandwidth|BW|—|100|—|MHz|RLOAD= 50Ω|



DS20005570C-page 5 

 2017 Microchip Technology Inc. 

**HV7360/HV7361** 

## **TEMPERATURE SPECIFICATIONS** 

|**TEMPERATURE SPECIFICATIONS**|**TEMPERATURE SPECIFICATIONS**|**TEMPERATURE SPECIFICATIONS**|**TEMPERATURE SPECIFICATIONS**|**TEMPERATURE SPECIFICATIONS**|**TEMPERATURE SPECIFICATIONS**|**TEMPERATURE SPECIFICATIONS**|
|---|---|---|---|---|---|---|
||||||||
|**Electrical Characteristics:**Unless otherwise noted, for all specifications TA= TJ= +25°C.|||||||
|**Parameter**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**|
|**TEMPERATURE RANGE**|||||||
|Maximum Junction Temperature|TJ|—|—|125|°C||
|OperatingTemperature|TA|–40|—|+85|°C||
|**PACKAGE THERMAL RESISTANCE**|||||||
|22-Lead CABGA|JA|—|106|—|°C/W||



## **POWER-UP AND POWER-DOWN SEQUENCE 1** 

|**Power-up**|**Power-up**|**Power-down**|**Power-down**|
|---|---|---|---|
|**Step**|**Description**|**Step**|**Description**|
|1|VLL|1|PE inactive|
|2|VDD, VH, VSSand VLwith signal logic low|2|VPPand VNNoff|
|3|VPPand VNN|3|VDD, VH, VSSand VLoff|
|4|PE active|4|VLLoff|



**Note 1:** Powering up or down in any arbitrary sequence will not cause any damage to the device. The power-up sequence and power-down sequence are only recommended to minimize possible inrush current. 

## **LOGIC CONTROL TABLE** 

|**PE**|**Input Pulse**|**Input Pulse**|**Input Pulse**|**Input Pulse**|**Output MOSFETs**|**Output MOSFETs**|**Output MOSFETs**|**Output MOSFETs**|
|---|---|---|---|---|---|---|---|---|
||**INA**|**INB**|**INC**|**IND**|**SP1 to DP1**|**DN1 to SN1**|**SP2 to DP2 **|**DN2 to SN2**|
|**1**|**1**|X|X|X|**ON**|X|X|X|
||X|**1**|X|X|X|**ON**|X|X|
||X|X|**1**|X|X|X|**ON**|X|
||X|X|X|**1**|X|X|X|**ON**|
||**0**|X|X|X|**OFF**|X|X|X|
||X|**0**|X|X|X|**OFF**|X|X|
||X|X|**0**|X|X|X|**OFF**|X|
||X|X|X|**0**|X|X|X|**OFF**|
|**0**|X|X|X|X|OFF|OFF|OFF|OFF|



DS20005570C-page 6 

 2017 Microchip Technology Inc. 

**HV7360/HV7361** 

## **2.0 PAD DESCRIPTION** 

Table 2-1 details the description of pads in HV7360/HV7361. Refer to **Package Type** for the location of pads. 

## **TABLE 2-1: PAD FUNCTION TABLE** 

|**Pad**<br>**Location**|<br>**HV7360**<br>**Symbol**|**HV7361**<br>**Symbol**|**Description**|
|---|---|---|---|
|A1|GND|GND|Driver and level translator circuitground return(0V)|
|A2|IND|IND|DampingN-FET control signal logic input, controllingN-FET2|
|A3|INC|INC|DampingP-FET control signal logic input, controllingP-FET2|
|A4|VSS|VSS|Negative voltagepower supply (0V)|
|A6|VDD|VDD|Positive voltage supply (+10V), should connect to an external decoupling cap to<br>VSS (0V)|
|A7|INB|INB|PulsingN-FET control signal logic input, controllingN-FET1|
|A8|INA|INA|PulsingP-FET control signal logic input, controllingP-FET1|
|A9|PE|PE|Drive power enable Hi = On, Low = Off, logic‘1’voltage reference input (+2.5V to<br>+3.3V)|
|B2|VL2|VL2|Gate-drive negative voltagepower supply (0V)|
|B8|VL1|VL1|Gate-drive negative voltagepower supply (0V)|
|F4|VH|VH|Gate-drivepositive voltagepower supply (+10V)|
|F7|VL3|VL3|VHto VLdecoupling cap. The trace connecting VL1, VL2, and VL3(0V) to ground<br>plane should be as short aspossible.|
|G4|NC|—|No connection for HV7360|
||—|RX|T/R switch output for HV7361|
|P1|SP2|SP2|Source of P-FET2,positive high voltagepower supply (0V to +100V)or GND|
|P2|DP2|DP2|Drain of P-FET2, transmitpulser output|
|P3|DN2|DN2|Drain of N-FET2, transmitpulser output|
|P4|SN2|SN2|Source of N-FET2, negative high voltagepower supply (0V to –100V)or GND|
|P5|NC|—|No connection for HV7360|
||—|XDCR|T/R switch input for HV7361|
|P6|SP1|SP1|Source of P-FET1,positive high voltagepower supply (0V to +100V)|
|P7|DP1|DP1|Drain of P-FET1, transmitpulser output|
|P8|DN1|DN1|Drain of N-FET1, transmitpulser output|
|P9|SN1|SN1|Source of N-FET1, negative high voltagepower supply (0V to –100V)|



DS20005570C-page 7 

 2017 Microchip Technology Inc. 

**HV7360/HV7361** 

## **3.0 FUNCTIONAL DESCRIPTION** 

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**----- Start of picture text -----**<br>
50% 50%<br>INB INA INB<br>td1 td3<br>INA IOUT td2 td4<br>50%<br>TX + DMP 0A 0A<br>tr1 tf2 50%<br>90%<br>IOUT<br>TX + DMP 10% tf1 tr2 +10V +10V<br>10% +100V<br>VDD VH VL3 SP1<br>+2.5/3.3V VLL<br>PE DP1<br>90%<br>INA DN1<br>R1<br>2.5/3.3V INB -100V<br>Logic Input SN1SP2<br>INC<br>IND DP2<br>DN2<br>SN2<br>XDCR<br>GND VSS VL1 VL2 RX T/R SW<br>FIGURE 3-1: Pulser Timing Test for HV7360/HV7361.<br>+IPEAK<br>IA-B<br>IA-B = +200μA<br>+1.0mA<br>-130V -VOFF     -VTRIP<br>+VTRIP        +VOFF VA-B +130V<br>+1.0mA<br>IA-B = -200μA<br>RSW = 15Ω<br>-IPEAK<br>**----- End of picture text -----**<br>


_**FIGURE 3-2:** T/R Switch I-V curve for HV7361._ 

DS20005570C-page 8 

 2017 Microchip Technology Inc. 

**HV7360/HV7361** 

**==> picture [380 x 248] intentionally omitted <==**

**----- Start of picture text -----**<br>
+10V +10V<br>VDD VH VL3  0 to +100V<br>SP1<br>+2.5/3.3V VLL<br>PE DP1<br>HVOUT<br>DN1<br>INA<br>0 to -100V<br>INB<br>SN1<br>2.5/3.3V<br>Logic Input SP2<br>INC<br>DP2<br>IND<br>DN2<br>SN2<br>GND VSS VL1 VL2<br>**----- End of picture text -----**<br>


_**FIGURE 3-3:** Typical Bipolar One-channel Three-level Ultrasound Transmitter Application Circuit for HV7360/HV7361._ 

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**----- Start of picture text -----**<br>
+10V +10V<br>0 to +100V<br>VDD VH VL3 SP1<br>+2.5/3.3V VLL<br>PE DP1<br>TX1<br>DN1<br>INA<br>INB SN1<br>2.5/3.3V SP2<br>Logic Input INC<br>0 to +100V<br>DP2<br>IND<br>TX2<br>DN2<br>SN2<br>GND VSS VL1 VL2<br>**----- End of picture text -----**<br>


_**FIGURE 3-4:** Typical Unipolar Two-channel Two-level Ultrasound Transmitter Application Circuit for HV7360/HV7361._ 

DS20005570C-page 9 

 2017 Microchip Technology Inc. 

**HV7360/HV7361** 

## **4.0 PACKAGING INFORMATION** 

## **4.1 Package Marking Information** 

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**----- Start of picture text -----**<br>
XXXXXX HV7360<br>XX e3 GA e3<br>YYWWNNN 1724111<br>XXXXXX HV7361<br>XX e3 GA e3<br>YYWWNNN 1718555<br>**----- End of picture text -----**<br>


**==> picture [353 x 141] intentionally omitted <==**

**----- Start of picture text -----**<br>
Legend: XX...X Product Code or Customer-specific information<br>Y Year code (last digit of calendar year)<br>YY Year code (last 2 digits of calendar year)<br>WW Week code (week of January 1 is week ‘01’)<br>NNN Alphanumeric traceability code<br>e3 Pb-free JEDEC [®]  designator for Matte Tin (Sn)<br>* This package is Pb-free. The Pb-free JEDEC designator (     ) e3<br>can be found on the outer packaging for this package.<br>Note : In the event the full Microchip part number cannot be marked on one line, it will<br>be carried over to the next line, thus limiting the number of available<br>characters for product code or customer-specific information. Package may or<br>not include the corporate logo.<br>**----- End of picture text -----**<br>


DS20005570C-page 10 

 2017 Microchip Technology Inc. 

**HV7360/HV7361** 

## **22-Ball Chip Array Ball Grid Array (JY) - 5x7 mm Body [CABGA]** 

**==> picture [441 x 564] intentionally omitted <==**

**----- Start of picture text -----**<br>
Note: For the most current package drawings, please see the Microchip Packaging Specification located at<br>http://www.microchip.com/packaging<br>0.10 C<br>22X<br>NOTE 1 D A 0.08 C<br>B<br>E<br>(DATUM B)<br>(DATUM A)<br>2X<br>0.10 C<br>2X<br>0.10 C TOP VIEW A1<br>A2<br>A<br>SEATING<br>eD C<br>2X (0.25) PLANE<br>SIDE VIEW<br>eE<br>eE<br>2<br>e<br>2X (0.50) 22X Øb<br>0.15 C A B<br>e 0.08 C<br>BOTTOM VIEW<br>Microchip Technology Drawing  C04-414A Sheet 1 of 2<br>**----- End of picture text -----**<br>


DS20005570C-page 11 

 2017 Microchip Technology Inc. 

**HV7360/HV7361** 

## **22-Ball Chip Array Ball Grid Array (JY) - 5x7 mm Body [CABGA]** 

**Note:** For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging 

**==> picture [306 x 252] intentionally omitted <==**

|Units|Units|MILLIMETERS|MILLIMETERS|MILLIMETERS|
|---|---|---|---|---|
|Dimension Limits||MIN|NOM|MAX|
|Number of Terminals|-|22|||
|Pitch|e|0.50 BSC|||
|Overall Height|A|0.91|0.98|1.05|
|Ball Height|A1|0.12|0.15|-|
|Package Thickness|A2|0.66|0.70|0.74|
|Overall Length|D|5.00 BSC|||
|Overall Terminal Pitch|eD|4.00 BSC|||
|Overall Width|E|7.00 BSC|||
|Overall Terminal Pitch|eE|6.50 BSC|||
|Ball Diameter|b|0.20|0.25|0.30|



Notes: 

1. Pin 1 visual index feature may vary, but must be located within the hatched area. 

2. Dimensioning and tolerancing per ASME Y14.5M BSC: Basic Dimension. Theoretically exact value shown without tolerances. REF: Reference Dimension, usually without tolerance, for information purposes only. 

Microchip Technology Drawing  C04-414A Sheet 2 of 2 

DS20005570C-page 12 

 2017 Microchip Technology Inc. 

**HV7360/HV7361** 

## **22-Ball Chip Array Ball Grid Array (JY) - 5x7 mm Body [CABGA]** 

**Note:** For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging 

|||||||||C1|||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||||||||||
||||||||||||||||
||||G||||||||||<br>E<br>ØX||
||C2||||||||||||||
|||||E|||||||||||
|||||||||||G|||||
||||||||||||||||
||||||||||||||||
|||Units|||||||MILLIMETERS||||||
|||Dimension Limits|||||||MIN|||NOM||MAX|
|Contact||Pitch||||||E|0.50 BSC||||||
|Contact||Pad Spacing||||||C1||||4.00|||
|Contact||Pad Spacing||||||C2||||6.50|||
|Contact||Pad Diameter(X22)||||||X||||0.25|||
|Contact||Pad to Contact Pad||||||G|0.20||||||



Notes: 

1. Dimensioning and tolerancing per ASME Y14.5M BSC: Basic Dimension. Theoretically exact value shown without tolerances. 

Microchip Technology Drawing C04-2414A 

DS20005570C-page 13 

 2017 Microchip Technology Inc. 

**HV7360/HV7361** 

## **NOTES:** 

DS20005570C-page 14 

 2017 Microchip Technology Inc. 

**HV7360/HV7361** 

## **APPENDIX A: REVISION HISTORY** 

## **Revision C (June 2017)** 

The following is the list of modifications: 

- Updated the operating ambient temperature in Absolute Maximum Ratings † and in the Temperature Specifications table 

- Made minor text changes throughout the document 

## **Revision B (April 2017)** 

- Removed the INC to IND connection line and changed the typical high voltage supply from +200V to +100V in Figure 3-4 

- Removed “HVCMOS[®] Technology for High Performance” from the Features Section 

- Made minor text changes throughout the document 

## **Revision A (June 2016)** 

- Converted Supertex Doc# DSFP-HV7360 and Supertex Doc# DSFP-HV7361 to Microchip DS20005570C 

- Meged HV7360 and HV7361 into one document 

- Replaced the 22-lead LFGA “LA” package with 22-lead CABGA “GA” package 

- Made minor text changes throughout the document 

DS20005570C-page 15 

 2017 Microchip Technology Inc. 

**HV7360/HV7361** 

## **PRODUCT IDENTIFICATION SYSTEM** 

To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office. 

||**PART NO.**|**XX**|**XX**||**-X**<br> **- X**||**Examples:**|**Examples:**||
|---|---|---|---|---|---|---|---|---|---|
||**Device**<br> <br>|**Package**<br> <br>**Options**|||**Environmental**<br>**Media Type**||a)|HV7360GA-G:|High-Voltage High-Speed Pulse<br>Generator with Built-in Fast RTZ|
||||||||||Damping FET, 22-lead CABGA|
||||||||||Package, 364/Tray|
||Devices:|HV7360||=|High-Voltage High-Speed Pulse Generator|||||
||||||with Built-in Fast RTZ Damping FETs||b)|HV7361GA-G:|High-Voltage High-Speed Pulse|
|||HV7361||=|High-Voltage High-Speed Pulse Generator||||Generator with Built-in Fast RTZ|
||||||with Built-in Fast RTZ Damping FETs and<br>an Integrated Two-Terminal Low-Noise T/R||||Damping FET and an Integrated<br>Two-Terminal Low-Noise T/R|
||||||Switch||||Switch, 22-lead CABGA Package,|
||||||||||364/Tray|
||Package:|GA||=|22-lead CABGA|||||
||Environmental:|G||=|Lead (Pb)-free/RoHS-compliant Package|||||
||Media Type:|(blank)||=|364/Tray for GA Package|||||
|||||||||||



DS20005570C-page 16 

 2017 Microchip Technology Inc. 

## **Note the following details of the code protection feature on Microchip devices:** 

- Microchip products meet the specification contained in their particular Microchip Data Sheet. 

- Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. 

- There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. 

- Microchip is willing to work with the customer who is concerned about the integrity of their code. 

- Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” 

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. 

Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE **.** Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated. 

_Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC[®] MCUs and dsPIC[®] DSCs, KEELOQ[®] code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified._ 

## **QUALITY MANAGEMENT  SYSTEM** 

## **CERTIFIED BY DNV** 

## **Trademarks** 

The Microchip name and logo, the Microchip logo, AnyRate, AVR, AVR logo, AVR Freaks, BeaconThings, BitCloud, CryptoMemory, CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KEELOQ, KEELOQ logo, Kleer, LANCheck, LINK MD, maXStylus, maXTouch, MediaLB, megaAVR, MOST, MOST logo, MPLAB, OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, Prochip Designer, QTouch, RightTouch, SAM-BA, SpyNIC, SST, SST Logo, SuperFlash, tinyAVR, UNI/O, and XMEGA are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. 

ClockWorks, The Embedded Control Solutions Company, EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS, mTouch, Precision Edge, and Quiet-Wire are registered trademarks of Microchip Technology Incorporated in the U.S.A. 

Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo, CodeGuard, CryptoAuthentication, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial Programming, ICSP, Inter-Chip Connectivity, JitterBlocker, KleerNet, KleerNet logo, Mindi, MiWi, motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PureSilicon, QMatrix, RightTouch logo, REAL ICE, Ripple Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI, SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. 

SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. 

Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. 

GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. 

All other trademarks mentioned herein are property of their respective companies. 

- © 2017, Microchip Technology Incorporated, All Rights Reserved. ISBN: 978-1-5224-1804-7 

## == == **ISO/TS 16949** 

DS20005570C-page 17 

 2017 Microchip Technology Inc. 

## **Worldwide Sales and Service** 

## **AMERICAS** 

**Corporate Office** 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: http://www.microchip.com/ support Web Address: www.microchip.com 

**Atlanta** Duluth, GA Tel: 678-957-9614 Fax: 678-957-1455 

**Austin, TX** Tel: 512-257-3370 

**Boston** Westborough, MA Tel: 774-760-0087 Fax: 774-760-0088 

**Chicago** Itasca, IL Tel: 630-285-0071 Fax: 630-285-0075 

**Dallas** Addison, TX Tel: 972-818-7423 Fax: 972-818-2924 

**Detroit** Novi, MI Tel: 248-848-4000 

**Houston, TX** Tel: 281-894-5983 

**Indianapolis** Noblesville, IN Tel: 317-773-8323 Fax: 317-773-5453 Tel: 317-536-2380 

**Los Angeles** Mission Viejo, CA Tel: 949-462-9523 Fax: 949-462-9608 Tel: 951-273-7800 

**Raleigh, NC** Tel: 919-844-7510 

**New York, NY** Tel: 631-435-6000 

**San Jose, CA** Tel: 408-735-9110 Tel: 408-436-4270 

**Canada - Toronto** Tel: 905-695-1980 Fax: 905-695-2078 

## **ASIA/PACIFIC** 

## **ASIA/PACIFIC** 

**Asia Pacific Office** Suites 3707-14, 37th Floor Tower 6, The Gateway Harbour City, Kowloon 

**China - Xiamen** Tel: 86-592-2388138 Fax: 86-592-2388130 

**China - Zhuhai** Tel: 86-756-3210040 Fax: 86-756-3210049 

**Hong Kong** Tel: 852-2943-5100 Fax: 852-2401-3431 

**India - Bangalore** Tel: 91-80-3090-4444 Fax: 91-80-3090-4123 

**Australia - Sydney** Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 

**India - New Delhi** Tel: 91-11-4160-8631 Fax: 91-11-4160-8632 

**China - Beijing** Tel: 86-10-8569-7000 Fax: 86-10-8528-2104 

**India - Pune** Tel: 91-20-3019-1500 

**China - Chengdu** Tel: 86-28-8665-5511 Fax: 86-28-8665-7889 

**Japan - Osaka** Tel: 81-6-6152-7160 Fax: 81-6-6152-9310 

**China - Chongqing** Tel: 86-23-8980-9588 Fax: 86-23-8980-9500 

**Japan - Tokyo** Tel: 81-3-6880- 3770 Fax: 81-3-6880-3771 

**China - Dongguan** Tel: 86-769-8702-9880 

**Korea - Daegu** Tel: 82-53-744-4301 Fax: 82-53-744-4302 

**China - Guangzhou** Tel: 86-20-8755-8029 

**Korea - Seoul** Tel: 82-2-554-7200 Fax: 82-2-558-5932 or 82-2-558-5934 

**China - Hangzhou** Tel: 86-571-8792-8115 Fax: 86-571-8792-8116 

**China - Hong Kong SAR** Tel: 852-2943-5100 Fax: 852-2401-3431 

**Malaysia - Kuala Lumpur** Tel: 60-3-6201-9857 Fax: 60-3-6201-9859 

**China - Nanjing** Tel: 86-25-8473-2460 Fax: 86-25-8473-2470 

**Malaysia - Penang** Tel: 60-4-227-8870 Fax: 60-4-227-4068 

**China - Qingdao** Tel: 86-532-8502-7355 Fax: 86-532-8502-7205 

**Philippines - Manila** Tel: 63-2-634-9065 Fax: 63-2-634-9069 

**China - Shanghai** Tel: 86-21-3326-8000 Fax: 86-21-3326-8021 

**Singapore** Tel: 65-6334-8870 Fax: 65-6334-8850 

**China - Shenyang** Tel: 86-24-2334-2829 Fax: 86-24-2334-2393 

**Taiwan - Hsin Chu** Tel: 886-3-5778-366 Fax: 886-3-5770-955 

**China - Shenzhen** Tel: 86-755-8864-2200 Fax: 86-755-8203-1760 

**Taiwan - Kaohsiung** Tel: 886-7-213-7830 

**China - Wuhan** Tel: 86-27-5980-5300 Fax: 86-27-5980-5118 

**Taiwan - Taipei** Tel: 886-2-2508-8600 Fax: 886-2-2508-0102 

**China - Xian Thailand - Bangkok** Tel: 86-29-8833-7252 Tel: 66-2-694-1351 Fax: 86-29-8833-7256 Fax: 66-2-694-1350 

**Thailand - Bangkok** Tel: 66-2-694-1351 

## **EUROPE** 

**Austria - Wels** Tel: 43-7242-2244-39 Fax: 43-7242-2244-393 

**Denmark - Copenhagen** Tel: 45-4450-2828 Fax: 45-4485-2829 

**Finland - Espoo** Tel: 358-9-4520-820 

**France - Paris** Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 

**France - Saint Cloud** Tel: 33-1-30-60-70-00 

**Germany - Garching** Tel: 49-8931-9700 **Germany - Haan** Tel: 49-2129-3766400 

**Germany - Heilbronn** Tel: 49-7131-67-3636 

**Germany - Karlsruhe** Tel: 49-721-625370 

**Germany - Munich** Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 

**Germany - Rosenheim** Tel: 49-8031-354-560 

**Israel - Ra’anana** Tel: 972-9-744-7705 

**Italy - Milan** Tel: 39-0331-742611 Fax: 39-0331-466781 

**Italy - Padova** Tel: 39-049-7625286 

**Netherlands - Drunen** Tel: 31-416-690399 Fax: 31-416-690340 

**Norway - Trondheim** Tel: 47-7289-7561 

**Poland - Warsaw** Tel: 48-22-3325737 

**Romania - Bucharest** Tel: 40-21-407-87-50 

**Spain - Madrid** Tel: 34-91-708-08-90 Fax: 34-91-708-08-91 

**Sweden - Gothenberg** Tel: 46-31-704-60-40 

**Sweden - Stockholm** Tel: 46-8-5090-4654 

**UK - Wokingham** Tel: 44-118-921-5800 

Fax: 44-118-921-5820 

DS20005570C-page 18 

 2017 Microchip Technology Inc. 11/07/16