# Bipolar Transistor Array, Complementary NPN and PNP, 50 V, 50 V, 200 mA, 200 mA, 380 mW
**URL**: https://novapart.co/products/HN1B01FDW1T1G/bipolar-transistor-array-complementary-npn-and-pnp
**SKU**: HN1B01FDW1T1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT
**Price**: €0.0440
**Stock**: 1000+
**Lead Time**: 78 days (indicative)
## Description
Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:380mW; DC Collector Current:200mA; DC Current Gain hFE:200hFE; Transistor Case Style:SC
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Product Range | - |
| Qualification | - |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | Complementary NPN and PNP |
| Power Dissipation Npn | 380mW |
| Power Dissipation Pnp | 380mW |
| Transistor Case Style | SC-74 |
| Transition Frequency Npn | - |
| Transition Frequency Pnp | - |
| Operating Temperature Max | 150°C |
| Dc Current Gain Hfe Min Npn | 200hFE |
| Dc Current Gain Hfe Min Pnp | 200hFE |
| Continuous Collector Current Npn | 200mA |
| Continuous Collector Current Pnp | 200mA |
| Collector Emitter Voltage Max Npn | 50V |
| Collector Emitter Voltage Max Pnp | 50V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2724488RL/)
## HN1B01FDW1T1G, SHN1B01FDW1T1G
## Complementary Dual General Purpose Amplifier Transistor **PNP and NPN Surface Mount**
## **www.onsemi.com**
## **Features**
- High Voltage and High Current: VCEO = 50 V, IC = 200 mA
- High hFE: hFE = 200 400
**==> picture [44 x 25] intentionally omitted <==**
**----- Start of picture text -----**
SC−74
CASE 318F
STYLE 3
**----- End of picture text -----**
- Moisture Sensitivity Level: 1
- ESD Rating
**==> picture [122 x 206] intentionally omitted <==**
**----- Start of picture text -----**
(6) (5) (4)
Q1 Q2
abe
(1) (2) (3)
MARKING DIAGRAM
R9 M
R9 = Specific Device Code
M = Date Code
= Pb−Free Package
**----- End of picture text -----**
- ♦ Human Body Model: 3A
- ♦ Machine Model: C
- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant*
**MAXIMUM RATINGS** (TA = 25 ° C)
R9 M **Rating Symbol Value Unit** Collector−Base Voltage V(BR)CBO 60 Vdc Collector−Emitter Voltage V(BR)CEO 50 Vdc R9 = Specific Device Code Emitter−Base Voltage V(BR)EBO 7.0 Vdc M = Date Code Collector Current − Continuous IC 200 mAdc = Pb−Free Package ~~Ss~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be **ORDERING INFORMATION** assumed, damage may occur and reliability may be affected. **Device Package Shipping**[†] **THERMAL CHARACTERISTICS** HN1B01FDW1T1G SC−74 3,000/Tape & Reel **Characteristic Symbol Max Unit** (Pb−Free) Power Dissipation PD 380 mW SHN1B01FDW1T1G SC−74 3,000/Tape & Reel Junction Temperature TJ 150 ° C (Pb−Free) ~~===~~ Storage Temperature Tstg −55 to +150 ° C †For information on tape and reel specifications,including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Publication Order Number: **HN1B01FDW1T1/D**
© Semiconductor Components Industries, LLC, 2016 **June, 2016 − Rev. 4**
**HN1B01FDW1T1G, SHN1B01FDW1T1G**
## **Q1: PNP**
## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted)
|**ELECTRICAL CHARACTERISTICS **(TA= 25°C unless otherwise n|oted)||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|Collector−Emitter Breakdown Voltage
(IC= 2.0 mAdc, IB= 0)|V(BR)CEO|−50|−|Vdc|
|Collector−Base Breakdown Voltage
(IC= 10�Adc, IE= 0)|V(BR)CBO|−60|−|Vdc|
|Emitter−Base Breakdown Voltage
(IE= 10�Adc, IC= 0)|V(BR)EBO|−7.0|−|Vdc|
|Collector−Base Cutoff Current
(VCB= 45 Vdc, IE= 0)|ICBO|−|−0.1|�Adc|
|Collector−Emitter Cutoff Current
(VCE= 10 Vdc, IB= 0)
(VCE= 30 Vdc, IB= 0)
(VCE= 30 Vdc, IB= 0, TA= 80°C)|ICEO|−
−
−|−0.1
−2.0
−1.0|�Adc
�Adc
mAdc|
|DC Current Gain (Note 1)
(VCE= 6.0 Vdc, IC= 2.0 mAdc)|hFE|−200|−400|−|
|Collector−Emitter Saturation Voltage
(IC= 100 mAdc, IB= 10 mAdc)|VCE(sat)|−|−0.3|Vdc|
## **Q2: NPN**
**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted)
|**ELECTRICAL CHARACTERISTICS **(TA= 25°C unless otherwise n|oted)||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|Collector−Emitter Breakdown Voltage
(IC= 2.0 mAdc, IB= 0)|V(BR)CEO|50|−|Vdc|
|Collector−Base Breakdown Voltage
(IC= 10�Adc, IE= 0)|V(BR)CBO|60|−|Vdc|
|Emitter−Base Breakdown Voltage
(IE= 10�Adc, IC= 0)|V(BR)EBO|7.0|−|Vdc|
|Collector−Base Cutoff Current
(VCB= 45 Vdc, IE= 0)|ICBO|−|0.1|�Adc|
|Collector−Emitter Cutoff Current
(VCE= 10 Vdc, IB= 0)
(VCE= 30 Vdc, IB= 0)
(VCE= 30 Vdc, IB= 0, TA= 80°C)|ICEO|−
−
−|0.1
2.0
1.0|�Adc
�Adc
mAdc|
|DC Current Gain (Note 1)
(VCE= 6.0 Vdc, IC= 2.0 mAdc)|hFE|200|400|−|
|Collector−Emitter Saturation Voltage
(IC= 100 mAdc, IB= 10 mAdc)|VCE(sat)|−|0.25|Vdc|
1. Pulse Test: Pulse Width ≤ 300 � s, D.C. ≤ 2%.
**www.onsemi.com**
**2**
**HN1B01FDW1T1G, SHN1B01FDW1T1G**
## **TYPICAL ELECTRICAL CHARACTERISTICS: PNP Transistor**
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**----- Start of picture text -----**
−200 1000
−2.0 mA −1.5 mA
−160 −1.0 mA TA = 100 ° C
−120 25 ° C −25 ° C
−0.5 mA
100
−80
IB = −0.2 mA
−40
TA = 25 ° C VCE = −1.0 V
0 10
0 −1 −2 −3 −4 −5 −6 −1 −10 −100 −1000
VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mA)
Figure 1. Collector Saturation Region Figure 2. DC Current Gain
1000 −1
IC/IB = 10
TA = 100 ° C
TA = 100 ° C
25 ° C −25 ° C 25 ° C −25 ° C
100 −0.1
VCE = −6.0 V
10 −0.01
−1 −10 −100 −1000 −1 −10 −100 −1000
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain Figure 4. VCE(sat) versus IC
−10 −10,000
COMMON EMITTER 25 ° C
VCE = 6 V TA = 100 ° C
−1000
−25 ° C
−100
−1
−10
TA = 25 ° C −1
IC/IB = 10
−0.1 −0.1
−1 −10 −100 −1000 0 −0.1 −0.2 −0.3 −0.4 −0.5 −0.6 −0.7 −0.8 −0.9 −1
IC, COLLECTOR CURRENT (mA) VBE, BASE−EMITTER VOLTAGE (V)
, DC CURRENT GAIN
FE
h
, COLLECTOR CURRENT (mA)
IC
, DC CURRENT GAIN
FE
h
, MAXIMUM COLLECTOR VOLTAGE (V)
CE(sat)
V
A)
�
VOLTAGE (V)
, BASE CURRENT (
IB
BASE−EMITTER SATURATION
**----- End of picture text -----**
**Figure 5. VBE(sat) versus IC**
**Figure 6. Base−Emitter Voltage**
**www.onsemi.com**
**3**
**HN1B01FDW1T1G, SHN1B01FDW1T1G**
## **TYPICAL ELECTRICAL CHARACTERISTICS: NPN Transistor**
**==> picture [488 x 173] intentionally omitted <==**
**----- Start of picture text -----**
280 1000
6.0 mA 3.0 mA 2.0 mA
240 5.0 mA
TA = 100 ° C
200 25 ° C
1.0 mA −25 ° C
160
100
120 0.5 mA
80
IB = 0.2 mA
40
0 TA = 25 ° C 10 VCE = 1.0 V
0 1 2 3 4 5 6 1 10 100 1000
VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mA)
, DC CURRENT GAIN
FE
h
, COLLECTOR CURRENT (mA)
IC
**----- End of picture text -----**
**Figure 7. Collector Saturation Voltage**
**Figure 8. DC Current Gain**
**==> picture [488 x 407] intentionally omitted <==**
**----- Start of picture text -----**
1000 1
IC/IB = 10
TA = 100 ° C
25 ° C
−25 ° C TA = 100 ° C
25 ° C
100 0.1 −25 ° C
VCE = 6.0 V
10 0.01
1 10 100 1000 1 10 100 1000
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 9. DC Current Gain Figure 10. VCE(sat) versus IC
10 10,000
COMMON EMITTER 25 ° C
VCE = 6 V TA = 100 ° C
1000
−25 ° C
100
1
10
TA = 25 ° C 1
IC/IB = 10
0.1 0.1
1 10 100 1000 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
IC, COLLECTOR CURRENT (mA) VBE, BASE−EMITTER VOLTAGE (V)
(V)
, DC CURRENT GAIN
FE
h
, MAXIMUM COLLECTOR VOLTAGE
CE(sat)
V
A)
�
VOLTAGE (V)
, BASE CURRENT (
IB
BASE−EMITTER SATURATION
**----- End of picture text -----**
**Figure 11. VBE(sat) versus IC**
**Figure 12. Base−Emitter Voltage**
**www.onsemi.com**
**4**
**HN1B01FDW1T1G, SHN1B01FDW1T1G**
## **TYPICAL ELECTRICAL CHARACTERISTICS**
**==> picture [242 x 173] intentionally omitted <==**
**----- Start of picture text -----**
10
PNP
100 ms 10 ms
1 1 ms
Thermal Limit
0.1
0.01
Single Pulse Test at TA = 25 ° C
0.001
0.1 1 10 100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR CURRENT (A)
IC
**----- End of picture text -----**
**Figure 13. PNP Safe Operating Area**
**==> picture [240 x 173] intentionally omitted <==**
**----- Start of picture text -----**
10
NPN
100 ms 10 ms 1 ms
1
Thermal Limit
0.1
0.01
Single Pulse Test at TA = 25 ° C
0.001
0.1 1 10 100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR CURRENT (A)
IC
**----- End of picture text -----**
**Figure 14. NPN Safe Operating Area**
**www.onsemi.com**
**5**
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
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**----- Start of picture text -----**
SC−74
6 CASE 318F
ISSUE P
1
DATE 07 OCT 2021
SCALE 2:1
**----- End of picture text -----**
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## **GENERIC MARKING DIAGRAM***
XXX M � � XXX = Specific Device Code M = Date Code � = Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking.
STYLE 1: STYLE 2: STYLE 3: PIN 1. CATHODE PIN 1. NO CONNECTION PIN 1. EMITTER 1 2. ANODE 2. COLLECTOR 2. BASE 1 3. CATHODE 3. EMITTER 3. COLLECTOR 2 4. CATHODE 4. NO CONNECTION 4. EMITTER 2 5. ANODE 5. COLLECTOR 5. BASE 2 6. CATHODE 6. BASE 6. COLLECTOR 1 STYLE 7: STYLE 8: STYLE 9: PIN 1. SOURCE 1 PIN 1. EMITTER 1 PIN 1. EMITTER 2 2. GATE 1 2. BASE 2 2. BASE 2 3. DRAIN 2 3. COLLECTOR 2 3. COLLECTOR 1 4. SOURCE 2 4. EMITTER 2 4. EMITTER 1 5. GATE 2 5. BASE 1 5. BASE 1 6. DRAIN 1 6. COLLECTOR 1 6. COLLECTOR 2
STYLE 4: STYLE 5: STYLE 6: PIN 1. COLLECTOR 2 PIN 1. CHANNEL 1 PIN 1. CATHODE 2. EMITTER 1/EMITTER 2 2. ANODE 2. ANODE 3. COLLECTOR 1 3. CHANNEL 2 3. CATHODE 4. EMITTER 3 4. CHANNEL 3 4. CATHODE 5. BASE 1/BASE 2/COLLECTOR 3 5. CATHODE 5. CATHODE 6. BASE 3 6. CHANNEL 4 6. CATHODE STYLE 10: STYLE 11: PIN 1. ANODE/CATHODE PIN 1. EMITTER 2. BASE 2. BASE 3. EMITTER 3. ANODE/CATHODE 4. COLLECTOR 4. ANODE 5. ANODE 5. CATHODE 6. CATHODE 6. COLLECTOR
## **DOCUMENT NUMBER: 98ASB42973B**
**DESCRIPTION: SC−74**
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
**PAGE 1 OF 1**
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© Semiconductor Components Industries, LLC, 2019
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## **PUBLICATION ORDERING INFORMATION**
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◊
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---
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