# Power MOSFET, P Channel, 20 V, 4.1 A, 0.039 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:4295182/)

**URL**: https://novapart.co/products/HMV4P1P02S/power-mosfet-p-channel-20-v-41-a-0039-ohm-sot-23
**SKU**: HMV4P1P02S
**Manufacturer**: MULTICOMP PRO
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1370
**Stock**: 1000+
**Lead Time**: 197 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | P Channel |
| Product Range | Multicomp Pro P Channel MOSFETs |
| Qualification | - |
| Power Dissipation | 1.1W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4.1A |
| Drain Source On State Resistance | 0.039ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4295182/)

## **P Channel Enhancement Mode Field Effect Transistor** 

**==> picture [379 x 96] intentionally omitted <==**

**----- Start of picture text -----**<br>
Schematic Diagram<br>Pin Assignment<br>1 G Gate<br>2 S Source<br>3 D Drain<br>\ ee a<br>**----- End of picture text -----**<br>


## **Applications** 

- PWM Applications 

- Power Management 

- Load Switch for Portable Devices 

## **Features** 

- Advanced Trench Technology 

- Lead Free Product is Acquired 

- ESD Rating : HBM 2.0KV 

- Excellent RDS(ON) and Low Gate Charge 

## **Maximum Ratings @TA = +25°C** 

|**Maximum Ratings @TA = +25°C**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|VDS|-20|V|
|Gate-Source Voltage|VGS|±10|V|
|Continuous Drain Current|ID|-4.1|A|
|Pulsed Drain Current(Note1.)|IDM|-16.4|A|
|Power Dissipation|PD|1.1|W|
|Thermal Resistance from Junction to Ambient|RθJA|114|°C/W|
|Operatingand Storage Temperature Range|TJ, TSTG|-55 to +150|°C|



Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro 

27/11/23 V1.0 

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## **P Channel Enhancement Mode Field Effect Transistor** 

## **Electrical Characteristics @TA = +25°CZ** 

|**Parameter**|**Test Conditions**|**Symbol**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Drain-Source Breakdown Voltage|VGS= 0V, ID= -250μA|VDSS|-20|--|--|V|
|Gate-Threshold Voltage|VDS= VGS, ID= 250μA|Vth(GS)|-0.4|-0.7|-1||
|Gate-BodyLeakage Current|VDS= 0V, VGS= ±10V|IGSS|--|--|±10|nA|
|Zero Gate Voltage Drain Current|VDS= 20V, VGS= 0V|IDSS|||-1|μA|
|Drain-Source On-Resistance<br>(Note2.)|VGS= 4.5V, ID= -4A|RDS(ON)||30|39|mΩ|
||VGS= 2.5V, ID= 3A|||40|56||
|Diode Forward Voltage|IS= -4.1A, VGS= 0V|VSD||--|-1.2|V|
|Continuous Diode Forward Voltage||IS||--|-4.1||
|Input Capacitance|VDS= -10V, VGS=0V, F = 1MHz|Ciss||289|--|pF|
|Output Capacitance||Coss||98|||
|Reverse Transfer Capacitance||Crss||22|||
|Total Gate Charge|VDS= 10V, ID= 4.1A, VGS= 4.5V|Qg||9||nC|
|Gate Source Charge||Qgs||1|||
|Gate-Drain(“Miller” Charge)||Qgd||2.6|||
|Turn-on DelayTime|VDD=-10V, RG= 1Ω, VGEN=-4.5V,<br>RL= 1.2Ω,|td(ON)||12||ns|
|Turn-on Rise Time||tR||35|||
|Turn-of DelayTime||td(Of)||30|||
|Turn-of Fall Time||tF||10|||
|Notes:  1.Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature.<br>2.Pulse Test : Pulse Width ≤300μs,DutyCycle≤2%.|||||||



Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro 

27/11/23 V1.0 

Page <2> 

## **P Channel Enhancement Mode Field Effect Transistor** 

## **Outline Dimensions** 

**==> picture [269 x 265] intentionally omitted <==**

||||
|---|---|---|
|**SOT-23-6L Package**|||
|**Dim**|**Min**|**Max**|
|A|--|1.2|
|A1|0|0.1|
|A2|1|1.2|
|b|0.3|0.5|
|c|0.119|0.135|
|D|2.8|3|
|E|1.5|1.7|
|E1|2.6|3|
|e|0.95 typ||
|e1|1.8|2|
|L|0.3|0.6|



Dimensions : Millimetres 

## **Part Number Table** 

|**Part Number Table**||
|---|---|
|**Description**|**Part Number**|
|P Channel Enhancement Mode FET, 20V, -4.1A, SOT-23-6L|HMV4P1P02S|



**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019. 

Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro 

27/11/23 V1.0 

Page <3> 



## Links

- [View this product on Novapart](https://novapart.co/products/HMV4P1P02S/power-mosfet-p-channel-20-v-41-a-0039-ohm-sot-23)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/multicomp-pro/hmv4p1p02s/mosfet-p-ch-20v-4-1a-sot-23/dp/4295182)
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