# Power MOSFET, N Channel, 650 V, 4 A, 2.4 ohm, TO-220F, Through Hole

![Product image](https://novapart.co/image/farnell:4295176/)

**URL**: https://novapart.co/products/HMF04N65S/power-mosfet-n-channel-650-v-4-a-24-ohm-to-220f
**SKU**: HMF04N65S
**Manufacturer**: MULTICOMP PRO
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3110
**Stock**: 1000+
**Lead Time**: 145 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | Multicomp Pro N Channel SUPERFETs |
| Qualification | - |
| Power Dissipation | 36W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220F |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4A |
| Drain Source On State Resistance | 2.4ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4295176/)

## **N Channel MOSFET** 

## **Device Schematic** 

## **Applications** 

- Electronic Ballasts 

- Electronic Transformer 

- High Efficiency Switch Mode Power Supplies 

## **Features** 

- RDS(ON) = 2Ω @ VGS = 10V 

- High Input Resistance 

- Low on Resistance 

## **Maximum Ratings @TA = +25°C** 

|**Maximum Ratings @TA = +25°C**||||
|---|---|---|---|
|**Parameter**<br>~~es~~|**Symbol**<br>~~es~~|**Value**<br>~~es~~|**Unit**<br>~~es~~|
|Drain-Source Voltage<br>~~a~~|VDSS<br>~~a~~|650<br>~~a~~|V<br>~~ee~~|
|Gate-Source Voltage<br>~~es~~|VGSS<br>~~es~~|±30<br>~~es~~<br>~~ee~~||
|Avalanche Current(Note 2.)<br>~~ec~~|IAR<br>~~ec~~|4<br>~~ec~~<br>~~ee~~|A<br>~~ec~~<br>~~ee~~<br>~~a~~<br>~~a~~|
|Continuous Drain Current<br>~~ec~~<br>~~a~~|ID<br>~~ec~~<br>~~a~~|4<br>~~ec~~<br>~~ee~~<br>~~a~~||
|Pulsed Drain Current(Note 2.)<br>~~ec~~<br>~~a~~|IDM<br>~~ec~~<br>~~a~~|16<br>~~ec~~<br>~~ee~~<br>~~a~~||
|Single Pulsed Avalanche Energy (Note 3.)<br>~~i~~|EAS<br>~~i~~|260<br>~~ee~~<br>~~i~~|mJ<br>~~ee~~<br>~~i~~|
|Repetitive Avalanche Energy (Note 2.)<br>~~i~~<br>~~es~~|EAR<br>~~i~~<br>~~es~~|10.6<br>~~i~~<br>~~es~~||
|Peak Diode Recoverydv/dt(Note 4.)<br>~~a~~|dv/dt|4.5|V/ns|
|Power Dissipation<br>~~GC~~|PD<br>~~GC~~|36<br>~~GC~~|W<br>~~GC~~|
|Junction Temperature<br>~~ee~~|Tj|150|°C<br>~~_~~|
|OperatingTemperature Range<br>~~ee~~<br>~~oes~~|TOPR<br>~~oes~~|-55 to +150<br>~~oes~~||
|Storage Temperature Range<br>~~ee~~<br>~~oes~~|TSTG<br>~~oes~~|||
|Notes:  1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.<br>2. Absolute maximum ratings are stress ratings only and functional device operation is not implied.<br>3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°c<br>4. ISD ≤ 4.4A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, StartingTJ = 25°c||||



4. ISD ≤ 4.4A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°c 

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## **N Channel MOSFET** 

## **Electrical Characteristics @TA = +25°C** 

|**Parameter**|**Test Conditions**|**Sym-**<br>**bol**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Drain-Source Breakdown Voltage|VGS=0V, ID=250μA|VDSS|650|--|--|V|
|Forward Gate-Source Leakage Current|VDS=0V, VGS=30V|IGSS|--||100|nA|
|Reverse Gate-Source Leakage Current|VDS=0V, VGS=-30V||--||-100||
|Drain-Source Leakage Current|VDS=650V, VGS=0V|IDSS|--||10|μA|
|**ON Characteristics**|||||||
|Gate-Threshold Voltage|VDS=VGS, ID=250μA|Vth(GS)|2|--|4|V|
|Static Drain-Source On-State Resistance|VGS=10V, ID=2A|RDS(ON)|--|2|2.4|Ω|
|**Dynamic Characteristics**|||||||
|Input Capacitance|VDS=25V, VGS=0V, F=1MHz|CISS|-|570|670|pF|
|Output Capacitance||COSS|-|70|90||
|Reverse Transfer Capacitance||CRSS|-|8|11||
|**Switching Characteristics**|||||||
|Turn-On DelayTime|VDD=325V, VGS=4V,<br>RG=25Ω, (Note 1,2)|tD(ON)|-|13|35|ns|
|Turn-On Rise Time||tR||45|100||
|Turn-Of DelayTime||tD(OFF)||25|60||
|Turn-Of Fall Time||tF||35|80||
|**Switching Characteristics**|||||||
|Total Gate Charge|VDS=520V, VGS=10V,ID=4A,<br>(Note 1,2)|QG|--|15|20|nC|
|Gate-Source Charge||QGS||3.4|--||
|Gate-Drain Charge||QGD||7.1|--||
|**Drain-Source Diode Characteristics And Maximum Ratings**|||||||
|Drain-Source Diode Forward Volta|IS=4A, VGS=0V|VSD|-|--|1.4|V|
|Continuous Drain-Source Diode Forward<br>Current||IS||--|4.4|A|
|Pulsed Drain-Source Diode Forward Current||ISM||--|17.6||
|Reverse RecoveryTime|VGS=0V, IS=4A,<br>dIF/dt=-100A/μs (Note 1)|tRR||250|--|ns|
|Reverse RecoveryCharge||QRR||1.5|--|μC|
|Notes: 1. Pulse Test:Pulse Width ≤300us,Duty Cycle≤2%.<br>2. Essentiallyindependent of operatingtemperature|||||||



Dimensions : Millimetres 

Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro 

27/11/23 V1.0 

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## **N Channel MOSFET** 

## **Outline Dimensions** 

## **Part Number Table** 

|**Part Number Table**||
|---|---|
|**Description**|**Part Number**|
|N Channel MOSFET, 650V, 4A, TO-220F|HMF04N65S|



**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019. 

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27/11/23 V1.0 

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## Links

- [View this product on Novapart](https://novapart.co/products/HMF04N65S/power-mosfet-n-channel-650-v-4-a-24-ohm-to-220f)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/multicomp-pro/hmf04n65s/mosfet-n-ch-650v-4a-to-220f/dp/4295176)
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