# IGBT, 34 A, 2.7 V, 125 W, 600 V, TO-220AB, 3 Pins ![Product image](https://novapart.co/image/farnell:1095121/) **URL**: https://novapart.co/products/HGTP7N60A4/igbt-34-a-27-v-125-w-600-to-220ab-3-pins **SKU**: HGTP7N60A4 **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €1.5300 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Power Dissipation | 125W | | Transistor Mounting | Through Hole | | Transistor Case Style | TO-220AB | | Operating Temperature Max | 150°C | | Continuous Collector Current | 34A | | Collector Emitter Voltage Max | 600V | | Collector Emitter Saturation Voltage | 2.7V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1095121/) ## **Is Now Part of** **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. _**HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4**_ _**Data Sheet**_ ## _**September 2004**_ ## _**600V, SMPS Series N-Channel IGBT**_ The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25[o] C and 150[o] C. ## _**Features**_ - >100kHz Operation at 390V, 7A - 200kHz Operation at 390V, 5A - 600V Switching SOA Capability - Typical Fall Time . . . . . . . . . . . . . . . . . . . 75ns at TJ = 125[o] C - Low Conduction Loss This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49331. ## _**Ordering Information**_ |**PART NUMBER**|**PACKAGE**|**BRAND**| |---|---|---| |HGT1S7N60A4S9A|TO-263AB|G7N60A4| |HGTG7N60A4|TO-247|G7N60A4| |HGTP7N60A4|TO-220AB|G7N60A4| NOTE: When ordering, use the entire part number. ## _**Symbol**_ **==> picture [45 x 85] intentionally omitted <==** **----- Start of picture text -----**
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## _**Packaging**_ **==> picture [445 x 209] intentionally omitted <==** **----- Start of picture text -----**
JEDEC STYLE TO-247 JEDEC TO-220AB
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COLLECTOR
(FLANGE)
COLLECTOR nig t—
(BOTTOM SIDE METAL)
JEDEC TO-263AB
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FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
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4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ©2004 Fairchild Semiconductor Corporation HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2 _**HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4**_ ## **Absolute Maximum Ratings** TC = 25[o] C, Unless Otherwise Specified |**Absolute Maximum Ratings** TC= 25oC, Unless Otherwise Specified||| |---|---|---| ||**ALL TYPES**|**UNITS**| |Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES|600|V| |Collector Current Continuous||| |At TC= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25|34|A| |At TC= 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110|14|A| |Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM|56|A| |Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES|±20|V| |Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM|±30|V| |Switching Safe Operating Area at TJ= 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA|35A at 600V|| |Single Pulse Avalanche Energy at TC= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS|25mJ at 7A|| |Power Dissipation Total at TC= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD|125|W| |Power Dissipation Derating TC> 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|1.0|W/oC| |Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG|-55 to 150|oC| |Maximum Lead Temperature for Soldering||| |Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL|300|oC| |Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG|260|oC| _CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied._ ## NOTE: ## 1. Pulse width limited by maximum junction temperature. |**Electrical Specifications**
TJ= 25oC, Unless Otherwise Specified|**Electrical Specifications**
TJ= 25oC, Unless Otherwise Specified|**Electrical Specifications**
TJ= 25oC, Unless Otherwise Specified|**Electrical Specifications**
TJ= 25oC, Unless Otherwise Specified||||| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN**|**TYP**|**MAX**|**UNITS**| |Collector to Emitter Breakdown Voltage|BVCES|IC= 250µA, VGE= 0V||600|-|-|V| |Emitter to Collector Breakdown Voltage|BVECS|IC= -10mA, VGE= 0V||20|-|-|V| |Collector to Emitter Leakage Current|ICES|VCE= 600V|TJ= 25oC|-|-|250|µA| ||||TJ= 125oC|-|-|2|mA| |Collector to Emitter Saturation Voltage|VCE(SAT)|IC= 7A,
VGE= 15V|TJ= 25oC|-|1.9|2.7|V| ||||TJ= 125oC|-|1.6|2.2|V| |Gate to Emitter Threshold Voltage|VGE(TH)|IC= 250µA, VCE= 600V||4.5|5.9|7.0|V| |Gate to Emitter Leakage Current|IGES|VGE=±20V||-|-|±250|nA| |Switching SOA|SSOA|TJ= 150oC, RG= 25Ω,VGE= 15V
L = 100µH, VCE= 600V||35|-|-|A| |Pulsed Avalanche Energy|EAS|ICE= 7A, L = 500µH||25|-|-|mJ| |Gate to Emitter Plateau Voltage|VGEP|IC= 7A, VCE= 300V||-|9.0|-|V| |On-State Gate Charge|Qg(ON)|IC= 7A,
VCE= 300V|VGE= 15V|-|37|45|nC| ||||VGE= 20V|-|48|60|nC| |Current Turn-On Delay Time|td(ON)I|IGBT and Diode at TJ= 25oC
ICE= 7A
VCE= 390V
VGE= 15V
RG= 25Ω
L = 1mH
Test Circuit (Figure 20)||-|11|-|ns| |Current Rise Time|trI|||-|11|-|ns| |Current Turn-Off Delay Time|td(OFF)I|||-|100|-|ns| |Current Fall Time|tfI|||-|45|-|ns| |Turn-On Energy (Note 2)|EON1|||-|55|-|µJ| |Turn-On Energy (Note 2)|EON2|||-|120|150|µJ| |Turn-Off Energy (Note 3)|EOFF|||-|60|75|µJ| ©2004 Fairchild Semiconductor Corporation HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2 _**HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4**_ ## **Electrical Specifications** TJ = 25[o] C, Unless Otherwise Specified **(Continued)** |**Electrical Specifications**
TJ= 25o|C, Unless Otherw|ise Specified **(Continued)**||||| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN**|**TYP**|**MAX**|**UNITS**| |Current Turn-On Delay Time|td(ON)I|IGBT and Diode at TJ= 125oC
ICE= 7A
VCE= 390V
VGE= 15V
RG= 25Ω
L = 1mH
Test Circuit (Figure 20)|-|10|-|ns| |Current Rise Time|trI||-|7|-|ns| |Current Turn-Off Delay Time|td(OFF)I||-|130|150|ns| |Current Fall Time|tfI||-|75|85|ns| |Turn-On Energy (Note 2)|EON1||-|50|-|µJ| |Turn-On Energy (Note 2)|EON2||-|200|215|µJ| |Turn-Off Energy (Note 3)|EOFF||-|125|170|µJ| |Thermal Resistance Junction To Case|RθJC||-|-|1.0|oC/W| NOTES: 2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 20. 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. ## _**Typical Performance Curves**_ Unless Otherwise Specified **==> picture [234 x 374] intentionally omitted <==** **----- Start of picture text -----**
35
VGE = 15V
30
25
20
15
10
5
0
25 50 75 100 125 150
TC, CASE TEMPERATURE ( [o] C)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
500
T C V GE
75 [o] C 15V
200
100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
f MAX2 = (P D - P C ) / (E ON2 + E OFF )
P C = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 1.0 [o] C/W, SEE NOTES
TJ = 125 [o] C, RG = 25 Ω , L = 2mH, V CE = 390V
30
1 5 10 20
ICE, COLLECTOR TO EMITTER CURRENT (A)
, DC COLLECTOR CURRENT (A)
ICE
, OPERATING FREQUENCY (kHz)
fMAX
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**FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT** **==> picture [240 x 167] intentionally omitted <==** **----- Start of picture text -----**
40
TJ = 150 [o] C, RG = 25 Ω , VGE = 15V, L = 100 µ H
30
20
10
0
0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
, COLLECTOR TO EMITTER CURRENT (A)
ICE
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**FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA** **==> picture [239 x 175] intentionally omitted <==** **----- Start of picture text -----**
16 140
VCE = 390V, RG = 25 Ω , TJ = 125 [o] C
14 120
12 ISC 100
10 80
8 60
6 tSC 40
4 20
10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
s)
µ , PEAK SHORT CIRCUIT CURRENT (A)
, SHORT CIRCUIT WITHSTAND TIME (
tSC ISC
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©2004 Fairchild Semiconductor Corporation HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2 _**HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4**_ ## _**Typical Performance Curves**_ Unless Otherwise Specified **(Continued)** **==> picture [240 x 166] intentionally omitted <==** **----- Start of picture text -----**
30
DUTY CYCLE < 0.5%, VGE = 12V
PULSE DURATION = 250 µ s
25
TJ = 125 [o] C
20
15
10
TJ = 25 [o] C
5
TJ = 150 [o] C
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
, COLLECTOR TO EMITTER CURRENT (A)
ICE
**----- End of picture text -----**
**==> picture [234 x 168] intentionally omitted <==** **----- Start of picture text -----**
30
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250 µ s
25
20
15
10
TJ = 125 [o] C
5
TJ = 150 [o] C TJ = 25 [o] C
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
, COLLECTOR TO EMITTER CURRENT (A)
ICE
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**FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE** **FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE** **==> picture [234 x 390] intentionally omitted <==** **----- Start of picture text -----**
500
RG = 25 Ω , L = 1mH, VCE = 390V
400
TJ = 125 [o] C, VGE = 12V, VGE = 15V
300
200
100
TJ = 25 [o] C, VGE = 12V, VGE = 15V
0
0 2 4 6 8 10 12 14
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
16
RG = 25 Ω , L = 1mH, VCE = 390V
TJ = 25 [o] C, VGE = 12V
14 T J = 125 [o] C, V GE = 12V
12 T J = 25 [o] C, V GE = 15V
10
TJ = 125 [o] C, VGE = 15V
8
0 2 4 6 8 10 12 14
ICE, COLLECTOR TO EMITTER CURRENT (A)
J)
µ
, TURN-ON ENERGY LOSS (
ON2
E
(ns)
TURN-ON DELAY TIME
td(ON)I,
**----- End of picture text -----**
**==> picture [234 x 390] intentionally omitted <==** **----- Start of picture text -----**
350
RG = 25 Ω , L = 1mH, VCE = 390V
300
250
200
TJ = 125 [o] C, VGE = 12V OR 15V
150
100
50
TJ = 25 [o] C, VGE = 12V OR 15V
0
0 2 4 6 8 10 12 14
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
40
RG = 25 Ω , L = 1mH, VCE = 390V
30 T J = 25 [o] C, V GE = 12V, V GE = 15V
20
10
TJ = 125 [o] C, VGE = 12V, VGE = 15V
0
0 2 4 6 8 10 12 14
ICE , COLLECTOR TO EMITTER CURRENT (A)
J)
µ
, TURN-OFF ENERGY LOSS (
OFF
E
(ns)
RISE TIME
trI,
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**FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT** **FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT** ©2004 Fairchild Semiconductor Corporation HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2 _**HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4**_ ## _**Typical Performance Curves**_ Unless Otherwise Specified **(Continued)** **==> picture [234 x 163] intentionally omitted <==** **----- Start of picture text -----**
180
RG = 25 Ω , L = 1mH, VCE = 390V
160
140 V GE = 15V, T J = 125 [o] C
120
VGE = 12V, TJ = 125 [o] C
100
VGE = 15V, TJ = 25 [o] C
80
VGE = 12V, TJ = 25 [o] C
60
0 2 4 6 8 10 12 14
ICE, COLLECTOR TO EMITTER CURRENT (A)
(ns)
, TURN-OFF DELAY TIME
td(OFF)I
**----- End of picture text -----**
**==> picture [234 x 163] intentionally omitted <==** **----- Start of picture text -----**
90
RG = 25 Ω , L = 1mH, VCE = 390V
80
70
TJ = 125 [o] C, VGE = 12V OR 15V
60
50
40 TJ = 25 [o] C, VGE = 12V OR 15V
30
20
0 2 4 6 8 10 12 14
ICE, COLLECTOR TO EMITTER CURRENT (A)
(ns)
, FALL TIME
tfI
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**FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT** **FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT** **==> picture [234 x 381] intentionally omitted <==** **----- Start of picture text -----**
120
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250 µ s
100
TJ = 25 [o] C
80
60 T J = 125 [o] C T J = -55 [o] C
40
20
0
7 8 9 10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
800
RG = 25 Ω , L = 1mH, VCE = 390V, VGE = 15V
E TOTAL = E ON2 + E OFF
600
ICE = 14A
400
ICE = 7A
200
ICE = 3.5A
0
25 50 75 100 125 150
TC, CASE TEMPERATURE ( [o] C)
, COLLECTOR TO EMITTER CURRENT (A)
ICE
J)
µ
, TOTAL SWITCHING ENERGY LOSS (
TOTAL
E
**----- End of picture text -----**
**==> picture [234 x 380] intentionally omitted <==** **----- Start of picture text -----**
15
IG(REF) = 1mA, RL = 43 Ω , TJ = 25 [o] C
12 VCE = 600V
VCE = 400V
9
VCE = 200V
6
3
0
0 5 10 15 20 25 30 35 40
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
10
TJ = 125 [o] C, L = 1mH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
1 ICE = 14A
I CE = 7A
I CE = 3.5A
0.1
10 100 1000
RG, GATE RESISTANCE ( Ω )
, GATE TO EMITTER VOLTAGE (V)
GE
V
, TOTAL SWITCHING ENERGY LOSS (mJ)
TOTAL
E
**----- End of picture text -----**
**FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE** **FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE** ©2004 Fairchild Semiconductor Corporation HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2 _**HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4**_ ## _**Typical Performance Curves**_ Unless Otherwise Specified **(Continued)** **==> picture [511 x 168] intentionally omitted <==** **----- Start of picture text -----**
1.4 2.8
FREQUENCY = 1MHz DUTY CYCLE < 0.5%, TJ = 25 [o] C
PULSE DURATION = 250 µ s,
1.2
2.6
1.0
2.4
0.8 CIES
ICE = 14A
0.6
2.2
0.4
COES 2.0 I CE = 7A
0.2
CRES ICE = 3.5A
0 1.8
0 20 40 60 80 100 9 10 11 12 13 14 15 16
VCE, COLLECTOR TO EMITTER VOLTAGE (V) VGE, GATE TO EMITTER VOLTAGE (V)
C, CAPACITANCE (nF)
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
V
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**FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE** **FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs GATE TO EMITTER VOLTAGE** **==> picture [478 x 167] intentionally omitted <==** **----- Start of picture text -----**
10 [0]
0.5
0.2
0.1 t1
10 [-1]
0.05 PD
0.02 t2
0.01 DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X Z θ JC X R θ JC) + TC
SINGLE PULSE
10 [-2]
10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1]
t1, RECTANGULAR PULSE DURATION (s)
NORMALIZED THERMAL RESPONSE
JC,
θ
Z
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**FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE** ## _**Test Circuit and Waveforms**_ **==> picture [494 x 151] intentionally omitted <==** **----- Start of picture text -----**
RHRP660
90%
VGE 10%
EON2
L = 1mH EOFF
VCE
RG = 25 Ω
90%
+ ICE 10%
VDD = 390V td(OFF)I trI
- tfI
td(ON)I
**----- End of picture text -----**
**FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT** **FIGURE 21. SWITCHING TEST WAVEFORMS** ©2004 Fairchild Semiconductor Corporation HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2 _**HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4**_ ## _**Handling Precautions for IGBTs**_ Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. **Gate Voltage Rating** - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. **Gate Termination** - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. ## _**Operating Frequency Information**_ Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 21. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). 7. **Gate Protection** - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ©2004 Fairchild Semiconductor Corporation HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2 ## **TRADEMARKS** The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. |ACEx™|FAST|ISOPLANAR™|Power247™|Stealth™| |---|---|---|---|---| |ActiveArray™|
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