# IGBT, 63 A, 1.8 V, 208 W, 600 V, TO-247, 3 Pins ![Product image](https://novapart.co/image/farnell:1838985/) **URL**: https://novapart.co/products/HGTG30N60C3D/igbt-63-a-18-v-208-w-600-to-247-3-pins **SKU**: HGTG30N60C3D **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €4.1700 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Power Dissipation | 208W | | Transistor Mounting | Through Hole | | Transistor Case Style | TO-247 | | Operating Temperature Max | 150°C | | Continuous Collector Current | 63A | | Collector Emitter Voltage Max | 600V | | Collector Emitter Saturation Voltage | 1.8V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1838985/) ## **Is Now Part of** **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. _**HGTG30N60C3D**_ **==> picture [139 x 44] intentionally omitted <==** ## _**Data Sheet**_ ## _**January 2009 File Number**_ **4041.2** ## _**63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes**_ The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25[o] C and 150[o] C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. ## _**Features**_ - 63A, 600V at TC = 25[o] C - Typical Fall Time . . . . . . . . . . . . . . . 230ns at TJ = 150[o] C - Short Circuit Rating - Low Conduction Loss - Hyperfast Anti-Parallel Diode ## _**Packaging**_ ## **JEDEC STYLE TO-247** **==> picture [33 x 21] intentionally omitted <==** **----- Start of picture text -----**
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C
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Formerly Developmental Type TA49014. ## _**Ordering Information**_ |**PART NUMBER**|**PACKAGE**|**BRAND**| |---|---|---| |HGTG30N60C3D|TO-247|G30N60C3D| NOTE: When ordering, use the entire part number. ## _**Symbol**_ **==> picture [60 x 84] intentionally omitted <==** **----- Start of picture text -----**
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**INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS** 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ©2009 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B ## _**HGTG30N60C3D**_ ## **Absolute Maximum Ratings** TC = 25[o] C, Unless Otherwise Specified |**Absolute Maximum Ratings** TC= 25oC, Unless Otherwise Specified||| |---|---|---| ||**HGTG30N60C3D**|**UNITS**| |Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES|600|V| |Collector Current Continuous||| |At TC= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25|63|A| |At TC= 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110|30|A| |Average Diode Forward Current at 110oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG)|25|A| |Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM|252|A| |Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES|±20|V| |Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM|±30|V| |Switching Safe Operating Area at TJ= 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA|60A at 600V|| |Power Dissipation Total at TC= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD|208|W| |Power Dissipation Derating TC> 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|1.67|W/oC| |Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG|-40 to 150|oC| |Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL|260|oC| |Short Circuit Withstand Time (Note 2) at VGE= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC|4|µs| |Short Circuit Withstand Time (Note 2) at VGE= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC|15|µs| _CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied._ ## NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125[o] C, RG = 25Ω. ## **Electrical Specifications** TC = 25[o] C, Unless Otherwise Specified |**Electrical Specifications**
TC= 25o|C, Unless Otherwi|se Specified|se Specified||||| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN**|**TYP**|**MAX**|**UNITS**| |Collector to Emitter Breakdown Voltage|BVCES|IC= 250µA, VGE= 0V||600|-|-|V| |Emitter to Collector Breakdown Voltage|BVECS|IC= 10mA, VGE= 0V||15|25|-|V| |Collector to Emitter Leakage Current|ICES|VCE= BVCES|TC= 25oC|-|-|250|µA| |||VCE= BVCES|TC= 150oC|-|-|3.0|mA| |Collector to Emitter Saturation Voltage|VCE(SAT)|IC= IC110,
VGE= 15V|TC= 25oC|-|1.5|1.8|V| ||||TC= 150oC|-|1.7|2.0|V| |Gate to Emitter Threshold Voltage|VGE(TH)|IC= 250µA,
VCE= VGE|TC= 25oC|3.0|5.2|6.0|V| |Gate to Emitter Leakage Current|IGES|VGE=±20V||-|-|±100|nA| |Switching SOA|SSOA|TJ= 150oC,
VGE= 15V,
RG= 3Ω,
L = 100µH|VCE(PK)= 480V|200|-|-|A| ||||VCE(PK)= 600V|60|-|-|A| |Gate to Emitter Plateau Voltage|VGEP|IC= IC110, VCE= 0.5 BVCES||-|8.1|-|V| |On-State Gate Charge|QG(ON)|IC= IC110,
VCE= 0.5 BVCES|VGE= 15V|-|162|180|nC| ||||VGE= 20V|-|216|250|nC| |Current Turn-On Delay Time|td(ON)I|TJ= 150oC,
ICE= IC110,
VCE(PK)= 0.8 BVCES,
VGE= 15V,
RG= 3Ω,
L = 100µH||-|40|-|ns| |Current Rise Time|trI|||-|45|-|ns| |Current Turn-Off Delay Time|td(OFF)I|||-|320|400|ns| |Current Fall Time|tfI|||-|230|275|ns| |Turn-On Energy|EON|||-|1050|-|µJ| |Turn-Off Energy (Note 3)|EOFF|||-|2500|-|µJ| |Diode Forward Voltage|VEC|IEC= 30A||-|1.75|2.2|V| ©2009 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B _**HGTG30N60C3D**_ **Electrical Specifications** TC = 25[o] C, Unless Otherwise Specified |**Electrical Specifications**
TC= 25o|C, Unless Otherw|ise Specified||||| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN**|**TYP**|**MAX**|**UNITS**| |Diode Reverse Recovery Time|trr|IEC= 30A, dIEC/dt = 100A/µs|-|52|60|ns| |||IEC= 1.0A, dIEC/dt = 100A/µs|-|42|50|ns| |Thermal Resistance|RθJC|IGBT|-|-|0.6|oC/W| |||Diode|-|-|1.3|oC/W| NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTG30N60C3D was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses. ## _**Typical Performance Curves**_ **==> picture [505 x 388] intentionally omitted <==** **----- Start of picture text -----**
150 PULSE DURATION = 250 µ s, DUTY CYCLE <0.5%, TC = 25 [o] C
PULSE DURATION = 250 µ s 150
125 DUTY CYCLE <0.5%, VCE = 10V VGE = 15.0V 12.0V 10.0V
125
9.5V
100
100
TC = 150 [o] C
75 9.0V
75
TC = 25 [o] C
50 8.5V
TC = -40 [o] C 50
7.0V
8.0V
25
25
7.5V
0
0
4 6 8 10 12 0 2 4 6 8 10
VGE, GATE TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS
150 150
PULSE DURATION = 250DUTY CYCLE <0.5%, VGE µ = 10Vs TC = -40 [o] C DUTY CYCLE <0.5%PULSE DURATION = 250 µ s
125 125 V GE = 15V
TC = 150 [o] C
100 100
TC = 25 [o] C TC = -40 [o] C TC = 25 [o] C
75 75
TC = 150 [o] C
50 50
25 25
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V)
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
ICE ICE
, COLLECTOR TO EMITTER CURRENT (A) , COLLECTOR TO EMITTER CURRENT (A)
ICE ICE
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**FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE** **FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE** ©2009 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B _**HGTG30N60C3D**_ ## _**Typical Performance Curves**_ **(Continued)** **==> picture [230 x 166] intentionally omitted <==** **----- Start of picture text -----**
70
VGE = 15V
60
50
40
30
20
10
0
25 50 75 100 125 150
TC, CASE TEMPERATURE ( [o] C)
, DC COLLECTOR CURRENT (A)
ICE
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**FIGURE 5. MAX. DC COLLECTOR CURRENT vs CASE TEMPERATURE** **==> picture [230 x 166] intentionally omitted <==** **----- Start of picture text -----**
200
TJ = 150 [o] C, RG = 3 Ω , L = 100 µ H, VCE(PK) = 480V
100
VGE = 10V
50
40
VGE = 15V
30
20
10
10 20 30 40 50 60
ICE, COLLECTOR TO EMITTER CURRENT (A)
, TURN-ON DELAY TIME (ns)
td(ON)I
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**FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT** **==> picture [229 x 166] intentionally omitted <==** **----- Start of picture text -----**
500
TJ = 150 [o] C, RG = 3 Ω , L = 100 µ H, VCE(PK) = 480V
VGE = 10V
100
V GE = 15V
10
10 20 30 40 50 60
ICE, COLLECTOR TO EMITTER CURRENT (A)
(ns)
TURN-ON RISE TIME
trI,
**----- End of picture text -----**
**FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT** **==> picture [231 x 168] intentionally omitted <==** **----- Start of picture text -----**
25 500
VCE = 360V, RG = 25 Ω , TJ = 125 [o] C
450
20 400
ISC
350
15 300
250
10 200
tSC
150
5 100
10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
s)
µ , PEAK SHORT CIRCUIT CURRENT (A)
, SHORT CIRCUIT WITHSTAND TIME (
tSC ISC
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**FIGURE 6. SHORT CIRCUIT WITHSTAND TIME** **==> picture [232 x 167] intentionally omitted <==** **----- Start of picture text -----**
500
TJ = 150 [o] C, RG = 3 Ω , L = 100 µ H, VCE(PK) = 480V
400
300 VGE = 15V
VGE = 10V
200
100
10 20 30 40 50 60
ICE, COLLECTOR TO EMITTER CURRENT (A)
, TURN-OFF DELAY TIME (ns)
td(OFF)I
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**FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT** **==> picture [231 x 167] intentionally omitted <==** **----- Start of picture text -----**
500
TJ = 150 [o] C, RG = 3 Ω , L = 100 µ H, VCE(PK) = 480V
400
300
VGE = 10V
200
VGE = 15V
100
10 20 30 40 50 60
ICE, COLLECTOR TO EMITTER CURRENT (A)
(ns)
FALL TIME
tfI,
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**FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO EMITTER CURRENT** ©2009 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B _**HGTG30N60C3D**_ ## _**Typical Performance Curves**_ **(Continued)** **==> picture [230 x 167] intentionally omitted <==** **----- Start of picture text -----**
8.0
TJ = 150 [o] C, RG = 3 Ω , L = 100 µ H, VCE(PK) = 480V
7.0
6.0
5.0
VGE = 10V
4.0
3.0
2.0
1.0
VGE = 15V
0
10 20 30 40 50 60
ICE, COLLECTOR TO EMITTER CURRENT (A)
(mJ)
, TURN-ON ENERGY LOSS
ON
E
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## **FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT** **==> picture [229 x 166] intentionally omitted <==** **----- Start of picture text -----**
500
T J = 150 [o] C, T C = 75 [o] C
RG = 3 Ω , L = 100 µ H
100
V GE = 15V
fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)
10 fMAX2 = (PD - PC)/(EON + EOFF)
PD = ALLOWABLE DISSIPATION VGE = 10V
P C = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R θ JC = 0.6 [o] C/W
1
5 10 20 30 40 60
ICE, COLLECTOR TO EMITTER CURRENT (A)
, OPERATING FREQUENCY (kHz)
fMAX
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**FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT** **==> picture [230 x 165] intentionally omitted <==** **----- Start of picture text -----**
8000
FREQUENCY = 400kHz
7000 CIES
6000
5000
4000
3000
2000
COES
1000
CRES
0
0 5 10 15 20 25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
C, CAPACITANCE (pF)
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**FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE** **==> picture [229 x 166] intentionally omitted <==** **----- Start of picture text -----**
6.0
TJ = 150 [o] C, RG = 3 Ω , L = 100 µ H, VCE(PK) = 480V
5.0
4.0
VGE = 10V or 15V
3.0
2.0
1.0
0
10 20 30 40 50 60
ICE, COLLECTOR TO EMITTER CURRENT (A)
(mJ)
, TURN-OFF ENERGY LOSS
OFF
E
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## **FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT** **==> picture [230 x 169] intentionally omitted <==** **----- Start of picture text -----**
250
TJ = 150 [o] C, VGE = 15V, L = 100 µ H
200
150
LIMITED BY
100 CIRCUIT
50
0
0 100 200 300 400 500 600
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
, COLLECTOR TO EMITTER CURRENT (A)
ICE
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**FIGURE 14. SWITCHING SAFE OPERATING AREA** **==> picture [228 x 169] intentionally omitted <==** **----- Start of picture text -----**
IG (REF) = 3.54mA, RL = 20 Ω , TC = 25 [o] C
600 15
480 12
VCE = 600V
360 9
240 V CE = 400V 6
VCE = 200V
120 3
0 0
0 40 80 120 160 200
QG, GATE CHARGE (nC)
VOLTAGE (V)
, GATE TO EMITTER VOLTAGE (V)
GE
, COLLECTOR TO EMITTER V
CE
V
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**FIGURE 16. GATE CHARGE WAVEFORMS** ©2009 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B _**HGTG30N60C3D**_ ## _**Typical Performance Curves**_ **(continued)** **==> picture [206 x 181] intentionally omitted <==** **----- Start of picture text -----**
500
10 µ s
100 100 µ s
1ms
10 10ms
DC
1
*Notes:
0.1 1. TC = 25 [o] C
2. TJ = 150 [o] C
3. Single Pulse
0.01
1 10 100 1000
Collector-Emitter Voltage, VCE [V]
[A]
c
Collector Current, I
**----- End of picture text -----**
**Figure 17. SOA Characteristics** **==> picture [467 x 177] intentionally omitted <==** **----- Start of picture text -----**
10 [0]
0.5
0.2
t 1
0.1
10 [-1] PD
0.05
t2
0.02
0.01
DUTY FACTOR, D = t1 / t2
SINGLE PULSE
10 [-2] PEAK T J = (P D X Z θ JC X R θ JC ) + T C
10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1]
t1, RECTANGULAR PULSE DURATION (s)
NORMALIZED THERMAL RESPONSE
JC,
θ
Z
**----- End of picture text -----**
**Figure 18. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE** ©2009 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B _**HGTG30N60C3D**_ ## _**Typical Performance Curves**_ **(continued)** **==> picture [230 x 166] intentionally omitted <==** **----- Start of picture text -----**
200
100 [o] C
10
150 [o] C 25 [o] C
1
0 0.5 1.0 1.5 2.0 2.5 3.0
VEC, FORWARD VOLTAGE (V)
, FORWARD CURRENT (A)
IEC
**----- End of picture text -----**
**Figure 19. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP** ## _**Test Circuit and Waveforms**_ **==> picture [204 x 154] intentionally omitted <==** **----- Start of picture text -----**
L = 100 µ H
RHRP3060
RG = 3 Ω
+
VDD = 480V
-
**----- End of picture text -----**
**Figure 21. INDUCTIVE SWITCHING TEST CIRCUIT** **==> picture [238 x 410] intentionally omitted <==** **----- Start of picture text -----**
60
TC = 25 [o] C, dIEC/dt = 100A/ µ s
50
trr
40
30 t a
20 t b
10
0
1 5 10 30
IEC, FORWARD CURRENT (A)
Figure 20. RECOVERY TIME vs FORWARD CURRENT
90%
10%
VGE
EOFF EON
VCE
90%
10%
ICE
td(OFF)I trI
tfI td(ON)I
, RECOVERY TIMES (ns)tr
**----- End of picture text -----**
**Figure 22. SWITCHING TEST WAVEFORMS** ©2009 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B _**HGTG30N60C3D**_ ## _**Handling Precautions for IGBTs**_ Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. **Gate Voltage Rating** - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. **Gate Termination** - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. **Gate Protection** - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. ## _**Operating Frequency Information**_ Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. tD(OFF)I and tD(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss during turn-off. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0). ©2009 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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