# IGBT, 75 A, 2.6 V, 463 W, 600 V, TO-247, 3 Pins ![Product image](https://novapart.co/image/farnell:9846611/) **URL**: https://novapart.co/products/HGTG30N60A4D/igbt-75-a-26-v-463-w-600-to-247-3-pins **SKU**: HGTG30N60A4D **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €4.7100 **Stock**: 10+ ## Description DC Collector Current:75A; Collector Emitter Saturation Voltage Vce(on):2.6V; Power Dissipation Pd:463W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Te ## Specifications | Parameter | Value | |---|---| | Msl | - | | Svhc | Lead (23-Jan-2024) | | No. Of Pins | 3Pins | | Product Range | - | | Power Dissipation | 463W | | Transistor Mounting | Through Hole | | Transistor Case Style | TO-247 | | Operating Temperature Max | 150°C | | Continuous Collector Current | 75A | | Collector Emitter Voltage Max | 600V | | Collector Emitter Saturation Voltage | 2.6V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:9846611/) ## SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode **600 V** ## HGTG30N60A4D **www.onsemi.com** The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49343. The diode used in anti−parallel is the development type TA49373. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49345. ## **Features** - >100 kHz Operation 390 V, 30 A - 200 kHz Operation 390 V, 18 A - 600 V Switching SOA Capability **==> picture [104 x 187] intentionally omitted <==** **----- Start of picture text -----**
C
G
g E
E
C
G
COLLECTOR
L Y (FLANGE)
TO−247−3LD SHORT LEAD
CASE 340CK
JEDEC STYLE
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- Typical Fall Time 60 ns at TJ = 125°C - Low Conduction Loss ## **MARKING DIAGRAM** - _Temperature Compensating_ Saber™ Model - This is a Pb−Free Device **==> picture [42 x 17] intentionally omitted <==** **----- Start of picture text -----**
$Y&Z&3&K
30N60A4D
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$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
30N60A4D = Specific Device Code
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## **ORDERING INFORMATION** See detailed ordering and shipping information on page 8 of this data sheet. Publication Order Number: **HGTG30N60A4D/D** **1** © Semiconductor Components Industries, LLC, 2004 **April, 2020 − Rev. 2** **HGTG30N60A4D** ## **ABSOLUTE MAXIMUM RATINGS** (TC = 25 ° C unless otherwise specified) |**ABSOLUTE MAXIMUM RATINGS**(TC= 25°C unless otherwise specified)|||| |---|---|---|---| |**Parameter**|**Symbol**|**HGTG30N60A4D**|**Unit**| |Collector to Emitter Voltage|BVCES|600|V| |Collector Current Continuous
At TC= 25°C
At TC= 110°C|IC25
IC110|70
60|A
A| |Collector Current Pulsed (Note 1)|ICM|240|A| |Gate to Emitter Voltage Continuous|VGES|±20|V| |Gate to Emitter Voltage Pulsed|VGEM|±30|V| |Switching Safe Operating Area at TJ= 150°C, (Figure 2)|SSOA|150 A at 600 V|| |Power Dissipation Total at TC= 25°C|PD|463|W| |Power Dissipation Derating TC> 25°C||3.7|W/°C| |Operating and Storage Junction Temperature Range|TJ, TSTG|−55 to 150|°C| |Maximum Temperature for Soldering|TL|260|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width limited by maximum junction temperature. ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**Parameter**|**Symbol**|**Test Condition**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---|---| |Collector to Emitter Breakdown Voltage|BVCES|IC= 250�A, VGE= 0 V||600|−|−|V| |Collector to Emitter Leakage Current|ICES|VCE= 600 V|TJ= 25°C|−|−|250|�A| ||||TJ= 125°C|−|−|2.8|mA| |Collector to Emitter Saturation Voltage|VCE(SAT)|IC= 30 A, VGE= 15 V|TJ= 25°C|−|1.8|2.6|V| ||||TJ= 125°C|−|1.6|2.0|V| |Gate to Emitter Threshold Voltage|VGE(TH)|IC= 250�A, VCE= VGE||4.5|5.2|7.0|V| |Gate to Emitter Leakage Current|IGES|VGE=±20 V||−|−|±250|nA| |Switching SOA|SSOA|TJ= 150°C, RG= 3�, VGE= 15 V,
L = 100�H, VCE= 600 V||150|−|−|A| |Gate to Emitter Plateau Voltage|VGEP|IC= 30 A, VCE= 300 V||−|8.5|−|V| |On−State Gate Charge|Qg(ON)|IC= 30 A, VCE= 300 V|VGE= 15 V|−|225|270|nC| ||||VGE= 20 V|−|300|360|nC| |Current Turn−On Delay Time|td(ON)I|IGBT and Diode at TJ= 25°C,
ICE= 30 A,
VCE= 390 V,
VGE= 15 V,
RG= 3�,
L = 200�H,
Test Circuit (Figure 24)||−|25|−|ns| |Current Rise Time|trI|||−|12|−|ns| |Current Turn−Off Delay Time|td(OFF)I|||−|150|−|ns| |Current Fall Time|tfI|||−|38|−|ns| |Turn−On Energy (Note 2)|EON1|||−|280|−|�J| |Turn−On Energy (Note 2)|EON2|||−|600|−|�J| |Turn−Off Energy (Note 3)|EOFF|||−|240|350|�J| |Current Turn−On Delay Time|td(ON)I|IGBT and Diode at TJ= 125°C,
ICE= 30 A,
VCE= 390 V,
VGE= 15 V,
RG= 3�,
L = 200�H,
Test Circuit (Figure 24)||−|24|−|ns| |Current Rise Time|trI|||−|11|−|ns| |Current Turn−Off Delay Time|td(OFF)I|||−|180|200|ns| |Current Fall Time|tfI|||−|58|70|ns| |Turn−On Energy (Note 2)|EON1|||−|280|−|�J| |Turn−On Energy (Note 2)|EON2|||−|1000|1200|�J| |Turn−Off Energy (Note 3)|EOFF|||−|450|750|�J| |Diode Forward Voltage|VEC|IEC= 30 A||−|2.2|2.5|V| |Diode Reverse Recovery Time|trr|IEC= 30 A, dIEC/dt = 200 A/�s||−|40|55|ns| |||IEC= 1 A, dIEC/dt = 200 A/�s||−|30|42|ns| **www.onsemi.com** **2** **HGTG30N60A4D** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) (continued) |**Parameter**|**Symbol**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |Thermal Resistance Junction To Case|R�JC|IGBT|−|−|0.27|°C/W| |||Diode|−|−|0.65|°C/W| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Values for two Turn−On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn−on loss of the IGBT only. EON2 is the turn−on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 24. 3. Turn−Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0 A). All devices were tested per JEDEC Standard No. 24−1 Method for Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss. ## **TYPICAL PERFORMANCE CURVES** (unless otherwise specified) **==> picture [475 x 360] intentionally omitted <==** **----- Start of picture text -----**
60 200
VGE = 15 V TJ = 150 ° C, RG = 3 � , VGE = 15 V, L = 500 � H
70
60 150
50
40 100
30
20 50
10
0 0
25 50 75 100 125 150 0 100 200 300 400 500 600 700
TC, CASE TEMPERATURE ( ° C) VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 1. DC COLLECTOR CURRENT vs. Figure 2. MINIMUM SWITCHING SAFE
CASE TEMPERATURE OPERATING AREA
500 18 900
T75C ° C 15 V VGE VCE = 390 V, RG = 3 � , TJ = 125 ° C
16 800
300
14 700
I SC
12 600
100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) 10 500
fMAX2 = (PD − PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION 8 400
(DUTY FACTOR = 50%) t SC
R ØJC = 0.27 ° C/W, SEE NOTES 6 300
TJ = 125 ° C, RG = 3 � , L = 200 � H, VCE = 390 V
30 4 200
3 10 30 60 10 11 12 13 14 15
ICE, COLLECTOR TO EMITTER CURRENT (A) VGE, GATE TO EMITTER VOLTAGE (V)
CURRENT (A)
, COLLECTOR TO EMITTER
, DC COLLECTOR CURRENT (A)ICE ICE
s)
�
TIME (
, OPERATING FREQUENCY (kHz) , SHORT CIRCUIT WITHSTAND
tSC
fMAX , PEAK SHORT CIRCUIT CURRENT (A)ISC
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**Figure 3. OPERATING FREQUENCY vs. COLLECTOR TO EMITTER CURRENT** **Figure 4. SHORT CIRCUIT WITHSTAND TIME** **www.onsemi.com** **3** **HGTG30N60A4D** ## **TYPICAL PERFORMANCE CURVES** (unless otherwise specified) (continued) **==> picture [229 x 555] intentionally omitted <==** **----- Start of picture text -----**
50
DUTY CYCLE < 0.5%, VGE = 12 V
PULSE DURATION = 250 � s
40
30
20
TJ = 125 ° C
10 TJ = 150 ° C TJ = 25 ° C
0
0 0.5 1.0 1.5 2.0 2.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. COLLECTOR TO EMITTER ON−STATE
VOLTAGE
3500
RG = 3 � , L = 200 � H, VCE = 390 V
3000
2500 TJ = 125 ° C, VGE = 12 V, VGE = 15 V
2000
1500
1000
500
TJ = 25 ° C, VGE = 12 V, VGE = 15 V
0
0 10 20 30 40 50 60
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 7. TURN−ON ENERGY LOSS vs.
COLLECTOR TO EMITTER CURRENT
34
RG = 3 � , L = 200 � H, VCE = 390 V
32 T J = 25 ° C, T J = 125 ° C, V GE = 12 V
30
28
26
24
22 TJ = 25 ° C, TJ = 125 ° C, VGE = 15 V
20
0 10 20 30 40 50 60
ICE, COLLECTOR TO EMITTER CURRENT (A)
CURRENT (A)
, COLLECTOR TO EMITTER
ICE
J)
�
, TURN−ON ENERGY LOSS (
ON2
E
, TURN−ON DELAY TIME (ns)
td(ON)I
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**Figure 9. TURN−ON DELAY TIME vs. COLLECTOR TO EMITTER CURRENT** **==> picture [235 x 554] intentionally omitted <==** **----- Start of picture text -----**
50
DUTY CYCLE < 0.5%, VGE = 15 V
PULSE DURATION = 250 � s
40
30
20
TJ = 125 ° C
10 TJ = 150 ° C TJ = 25 ° C
0
0 0.5 1.0 1.5 2.0 2.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. COLLECTOR TO EMITTER ON−STATE
VOLTAGE
1400
RG = 3 � , L = 200 � H, VCE = 390 V
1200
1000
800
TJ = 125 ° C, VGE = 12 V or 15 V
600
400
200
TJ = 25 ° C, VGE = 12 V or 15 V
0
0 10 20 30 40 50 60
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 8. TURN−OFF ENERGY LOSS vs.
COLLECTOR TO EMITTER CURRENT
100
RG = 3 � , L = 200 � H, VCE = 390 V
80
TJ = 125 ° C, VGE = 15 V, VGE = 12 V
60
TJ = 25 ° C, VGE = 12 V
40
20
TJ = 25 ° C, VGE = 15 V
0
0 10 20 30 40 50 60
ICE, COLLECTOR TO EMITTER CURRENT (A)
CURRENT (A)
, COLLECTOR TO EMITTER
ICE
J)
�
, TURN−OFF ENERGY LOSS (
OFF
E
, RISE TIME (ns)
trI
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**Figure 10. TURN−ON RISE TIME vs. COLLECTOR TO EMITTER CURRENT** **www.onsemi.com** **4** **HGTG30N60A4D** ## **TYPICAL PERFORMANCE CURVES** (unless otherwise specified) (continued) **==> picture [224 x 363] intentionally omitted <==** **----- Start of picture text -----**
220
RG = 3 � , L = 200 � H, VCE = 390 V
200
VGE = 12 V, VGE = 15 V, TJ = 125 ° C
180
160
140
VGE = 12 V, VGE = 15 V, TJ = 25 ° C
120
0 10 20 30 40 50 60
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 11. TURN−OFF DELAY TIME vs.
COLLECTOR TO EMITTER CURRENT
350
DUTY CYCLE < 0.5%, VCE = 10 V
300 PULSE DURATION = 250 � s
TJ = 25 ° C
250
200
150
TJ = 125 ° C
100
TJ = −55 ° C
50
0
6 7 8 9 10 11 12
VGE, GATE TO EMITTER VOLTAGE (V)
, TURN−OFF DELAY TIME (ns)
td(OFF)I
CURRENT (A)
, COLLECTOR TO EMITTER
ICE
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**Figure 13. TRANSFER CHARACTERISTIC** **==> picture [218 x 359] intentionally omitted <==** **----- Start of picture text -----**
70
RG = 3 � , L = 200 � H, VCE = 390 V
60
TJ = 125 ° C, VGE = 12 V or 15 V
50
40
TJ = 25 ° C, VGE = 12 V or 15 V
30
20
0 10 20 30 40 50 60
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 12. FALL TIME vs. COLLECTOR TO
EMITTER CURRENT
15.0
IG(REF) = 1 mA, RL = 15 � , TJ = 25 ° C
12.5
VCE = 600 V
10.0 V CE = 400 V
7.5
VCE = 200 V
5.0
2.5
0
0 50 100 150 200 250
QG, GATE CHARGE (nC)
, FALL TIME (ns)
tfI
, GATE TO EMITTER VOLTAGE (V)
GE
V
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**Figure 14. GATE CHARGE WAVEFORMS** **==> picture [225 x 143] intentionally omitted <==** **----- Start of picture text -----**
5
RG = 3 � , L = 200 � H, VCE = 390 V, VGE = 15 V
ETOTAL = EON2 + EOFF
4
ICE = 60 A
3
2
ICE = 30 A
1 ICE = 15 A
0
25 50 75 100 125 150
TC, CASE TEMPERATURE ( ° C)
, TOTAL SWITCHING
ENERGY LOSS (mJ)
TOTAL
E
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**Figure 15. TOTAL SWITCHING LOSS vs. CASE TEMPERATURE** **==> picture [226 x 142] intentionally omitted <==** **----- Start of picture text -----**
20 TJ = 125 ° C L = 200 � H, VCE = 390 V, VGE = 15 V
ETOTAL = EON2 + EOFF
16
12
8
ICE = 60 A
4
ICE = 30 A
ICE = 15 A
0
3 10 100 300
RG, GATE RESISTANCE ( � )
, TOTAL SWITCHING
ENERGY LOSS (mJ)
TOTAL
E
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**Figure 16. TOTAL SWITCHING LOSS vs. GATE RESISTANCE** **www.onsemi.com** **5** **HGTG30N60A4D** ## **TYPICAL PERFORMANCE CURVES** (unless otherwise specified) (continued) **==> picture [219 x 554] intentionally omitted <==** **----- Start of picture text -----**
10
FREQUENCY = 1 MHz
8
6
CIES
4
2 COES
CRES
0
0 5 10 15 20 25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 17. CAPACITANCE vs. COLLECTOR TO
EMITTER VOLTAGE
35
DUTY CYCLE < 0.5%
30 PULSE DURATION = 250 � s
25
125 ° C 25 ° C
20
15
10
5
0
0 0.5 1.0 1.5 2.0 2.5
VEC, FORWARD VOLTAGE (V)
Figure 19. DIODE FORWARD CURRENT vs.
FORWARD VOLTAGE DROP
60
125 ° C ta IEC = 30 A, VCE = 390 V
50
40
125 ° C tb
30 25 ° C t a
20
25 ° C tb
10
0
200 300 400 500 600 700 800 900 1000
diEC/dt, RATE OF CHANGE OF CURRENT (A/ � s)
C, CAPACITANCE (nF)
, FORWARD CURRENT (A)
IEC
, RECOVERY TIMES (ns)
trr
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**Figure 21. RECOVERY TIMES vs. RATE OF CHANGE OF CURRENT** **==> picture [230 x 555] intentionally omitted <==** **----- Start of picture text -----**
2.3
DUTY CYCLE < 0.5%, VGE = 15 V
PULSE DURATION = 250 � s, TJ = 25 ° C
2.2
2.1
2.0 ICE = 60 A
1.9 I CE = 30 A
1.8 I CE = 15 A
1.7
9 10 11 12 13 14 15 16
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 18. COLLECTOR TO EMITTER ON−STATE
VOLTAGE vs. GATE TO EMITTER VOLTAGE
100
90 dIEC/dt = 200 A/ � s 125 ° C trr
80
70
60
125 ° C ta
50
25 ° C trr
40 125 ° C tb
30
20 25 ° C t a
10 25 ° C tb
0
0 5 10 15 20 25 30
IEC, FORWARD CURRENT (A)
Figure 20. RECOVERY TIMES vs.
FORWARD CURRENT
1400
VCE = 390 V 125 ° C ICE = 30 A
1200
1000 125 ° C ICE = 15 A
800
600
25 ° C ICE = 30 A
400
200 25 ° C I CE = 15 A
0
200 300 400 500 600 700 800 900 1000
diEC/dt, RATE OF CHANGE OF CURRENT (A/ � s)
VOLTAGE (V)
, COLLECTOR TO EMITTER
CE
V
, RECOVERY TIMES (ns)
trr
CHARGE (nc)
, REVERSE RECOVERY
rr
Q
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**Figure 22. STORED CHARGE vs. RATE OF CHANGE OF CURRENT** **www.onsemi.com** **6** **HGTG30N60A4D** ## **TYPICAL PERFORMANCE CURVES** (unless otherwise specified) (continued) **==> picture [475 x 174] intentionally omitted <==** **----- Start of picture text -----**
10 [0]
0.50
0.20
0.10
10 [−1] t1
0.05
PD
0.02 t 2
0.01 DUTY FACTOR, D = t 1 / t 2
SINGLE PULSE PEAK TJ = (PD x Z � JC x R � JC) + TC
10 [−2]
10 [−5] 10 [−4] 10 [−3] 10 [−2] 10 [−1] 10 [0] 10 [1]
t1, RECTANGULAR PULSE DURATION (s)
, NORMALIZED THERMAL RESPONSE
JC
�
Z
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**Figure 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE** ## **TEST CIRCUIT AND WAVEFORMS** **==> picture [201 x 151] intentionally omitted <==** **----- Start of picture text -----**
HGTP30N60A4D
DIODE TA49373
L = 200 � H
RG = 3 �
DUT
+
VDD = 390 V
−
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**Figure 24. INDUCTIVE SWITCHING TEST CIRCUIT** **==> picture [235 x 143] intentionally omitted <==** **----- Start of picture text -----**
90%
VGE 10%
EON2
EOFF
VCE
90%
ICE 10%
td(OFF)I trI
tfI
td(ON)I
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**Figure 25. SWITCHING TEST WAVEFORMS** **www.onsemi.com** **7** **HGTG30N60A4D** ## **HANDLING PRECAUTIONS FOR IGBTs** Insulated Gate Bipolar Transistors are susceptible to gate− insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD� LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means − for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. _Gate Voltage Rating_ − Never exceed the gate−voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. _Gate Termination_ − The gates of these devices are essentially capacitors. Circuits that leave the gate open− circuited or floating should be avoided. These conditions can result in turn−on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. _Gate Protection_ - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ## **OPERATING FREQUENCY INFORMATION** Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05 / (td(OFF)I + td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on−state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 25. Device turn−off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD − PC) / (EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM − TC) / R�JC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE) / 2. EON2 and EOFF are defined in the switching waveforms shown in Figure 25. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn−on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn−off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). ## **ORDERING INFORMATION** |**ORDERING INFORMATION**|||| |---|---|---|---| |**Part Number**|**Package**|**Brand**|**Shipping**†| |HGTG30N60A4D|TO−247|30N60A4D|450 Units / Tube| NOTE: When ordering, use the entire part number. Saber is a registered trademark of Sabremark Limited Partnership. All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders. **www.onsemi.com** **8** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [116 x 29] intentionally omitted <==** **----- Start of picture text -----**
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
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DATE 31 JAN 2019 A P1 | A E A2 @ P 0) D2 ~~1 + _~~ Q E2 ) ! S C ~~R OG )~~ D1 D B E1 2 1 2 3 ~~|~~ Oo | ~~N77~~ L1 A1 b4 L c (3X) b (2X) b2 0.25[M] B A[M] MILLIMETERS (2X) e DIM MIN NOM MAX A ~~eee~~ A 4.58 4.70 4.82 NOTES: UNLESS OTHERWISE SPECIFIED. ~~|~~ A1 2.20 2.40 2.60 A. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD ~~a~~ A2 1.40 ~~ee~~ 1.50 ~~ee~~ 1.60 ~~ee~~ b 1.17 1.26 1.35 ©. FLASH,DRAWING ANDCONFORMS TIE BAR EXTRUSIONS.TO ASME Y14.5 - 2009. ~~eeee~~ b2 1.53 ~~ee~~ 1.65 ~~ee~~ 1.77 D. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BYL1. ~~[—~~ b4 ~~[|~~ 2.42 2.54 ~~ss~~ 2.66 c 0.51 0.61 0.71 E. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. ~~ee ee ee eee~~ **GENERIC** D 20.32 20.57 20.82 **MARKING DIAGRAM*** ~~ee ee ee ee~~ D1 13.08 ~ ~ ~~ee ee eee eee~~ AYWWZZ ~~ee~~ D2 ~~ee~~ 0.51 0.93 1.35 XXXXXXX ~~a~~ E ~~ee~~ 15.37 15.62 15.87 ~~eee~~ XXXXXXX ~~a~~ E1 ~~ee~~ 12.81 ~ ~~eee~~ ~ ~~a~~ E2 ~~ee~~ 4.96 5.08 ~~eee~~ 5.20 XXXX = Specific Device Code ~~a~~ e ~~ee~~ ~ 5.56 ~~eee~~ ~ A = Assembly Location Y = Year ~~ee~~ L ~~ee~~ 15.75 16.00 ~~**eee**~~ 16.25 WW = Work Week L1 3.69 3.81 3.93 ZZ = Assembly Lot Code P 3.51 3.58 3.65 *This information is generic. Please refer to ~~po |~~ ~~**|**~~ P1 6.60 6.80 7.00 device data sheet for actual part marking. ~~fo |~~ ~~**|**~~ Pb−Free indicator, “G” or microdot “ . ”, may ~~a~~ Q ~~ee~~ 5.34 5.46 5.58 or may not be present. Some products may not follow the Generic Marking. ~~a~~ S ~~ee~~ 5.34 5.46 eee 5.58 ~~ee~~ Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON13851G** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. ## **DOCUMENT NUMBER: 98AON13851G** **DESCRIPTION: TO−247−3LD SHORT LEAD** **PAGE 1 OF 1** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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