# IGBT, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 Pins ![Product image](https://novapart.co/image/farnell:1057679/) **URL**: https://novapart.co/products/HGTG20N60A4D/igbt-70-a-27-v-290-w-600-to-247-3-pins **SKU**: HGTG20N60A4D **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €3.1700 **Stock**: 10+ ## Description DC Collector Current:70A; Collector Emitter Saturation Voltage Vce(on):2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Te ## Specifications | Parameter | Value | |---|---| | Msl | - | | No. Of Pins | 3Pins | | Power Dissipation | 290W | | Operating Temperature Max | 150°C | | Continuous Collector Current | 70A | | Collector Emitter Voltage Max | 600V | | Collector Emitter Saturation Voltage | 2.7V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1057679/) ## **Is Now Part of** **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. _**HGTG20N60A4D**_ ## _**Data Sheet**_ ## _**February 2009**_ ## _**600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode**_ The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25[o] C and 150[o] C. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. **This device has been optimized for high frequency switch mode power supplies** . ## _**Features**_ - >100kHz Operation At 390V, 20A - 200kHz Operation At 390V, 12A - 600V Switching SOA Capability - Typical Fall Time . . . . . . . . . . . . . . . . 55ns at TJ = 125[o] C - Low Conduction Loss - _Temperature Compensating_ SABER™ Model www.fairchildsemi.com ## _**Packaging**_ ## **JEDEC STYLE TO-247** Formerly Developmental Type TA49341. ## _**Ordering Information**_ |**PART NUMBER**|**PACKAGE**|**BRAND**| |---|---|---| |HGTG20N60A4D|TO-247|20N60A4D| NOTE: When ordering, use the entire part number. **==> picture [44 x 15] intentionally omitted <==** **----- Start of picture text -----**
COLLECTOR
(FLANGE)
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## _**Symbol**_ **==> picture [50 x 84] intentionally omitted <==** **----- Start of picture text -----**
C
G
E
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FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
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4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ©2009 Fairchild Semiconductor Corporation HGTG20N60A4D Rev. C1 ## _**HGTG20N60A4D**_ ## **Absolute Maximum Ratings** TC = 25[o] C, Unless Otherwise Specified |**Absolute Maximum Ratings** TC= 25oC, Unless Otherwise Specified||| |---|---|---| ||**HGTG20N60A4D**|**UNITS**| |Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES|600|V| |Collector Current Continuous||| |At TC= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25|70|A| |At TC= 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110|40|A| |Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM|280|A| |Diode Continuous Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFM110|20|A| |Diode Maximum Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IFM|80|A| |Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES|±20|V| |Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM|±30|V| |Switching Safe Operating Area at TJ= 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA|100A at 600V|| |Power Dissipation Total at TC= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD|290|W| |Power Dissipation Derating TC> 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|2.32|W/oC| |Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG|-55 to 150|oC| |Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL|260|oC| _CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied._ NOTE 1: Pulse width limited by maximum junction temperature. |**Electrical Specifications**
TJ= 25oC, Unless Otherwise Specified|**Electrical Specifications**
TJ= 25oC, Unless Otherwise Specified|**Electrical Specifications**
TJ= 25oC, Unless Otherwise Specified|**Electrical Specifications**
TJ= 25oC, Unless Otherwise Specified||||| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN**|**TYP**|**MAX**|**UNITS**| |Collector to Emitter Breakdown Voltage|BVCES|IC= 250μA, VGE= 0V||600|-|-|V| |Collector to Emitter Leakage Current|ICES|VCE= 600V|TJ= 25oC|-|-|250|μA| ||||TJ= 125oC|-|-|3.0|mA| |Collector to Emitter Saturation Voltage|VCE(SAT)|IC= 20A,
VGE= 15V|TJ= 25oC|-|1.8|2.7|V| ||||TJ= 125oC|-|1.6|2.0|V| |Gate to Emitter Threshold Voltage|VGE(TH)|IC= 250μA, VCE= 600V||4.5|5.5|7.0|V| |Gate to Emitter Leakage Current|IGES|VGE=±20V||-|-|±250|nA| |Switching SOA|SSOA|TJ= 150oC, RG= 3Ω, VGE= 15V,
L = 100μH, VCE= 600V||100|-|-|A| |Gate to Emitter Plateau Voltage|VGEP|IC= 20A, VCE= 300V||-|8.6|-|V| |On-State Gate Charge|Qg(ON)|IC= 20A,
VCE= 300V|VGE= 15V|-|142|162|nC| ||||VGE= 20V|-|182|210|nC| |Current Turn-On Delay Time|td(ON)I|IGBT and Diode at TJ= 25oC,
ICE= 20A,
VCE= 390V,
VGE= 15V,
RG= 3Ω,
L = 500μH,
Test Circuit Figure 24||-|15|-|ns| |Current Rise Time|trI|||-|12|-|ns| |Current Turn-Off Delay Time|td(OFF)I|||-|73|-|ns| |Current Fall Time|tfI|||-|32|-|ns| |Turn-On Energy (Note 3)|EON1|||-|105|-|μJ| |Turn-On Energy (Note 3)|EON2|||-|280|350|μJ| |Turn-Off Energy (Note 2)|EOFF|||-|150|200|μJ| |Current Turn-On Delay Time|td(ON)I|IGBT and Diode at TJ= 125oC,
ICE= 20A,
VCE= 390V, VGE= 15V,
RG= 3Ω,
L = 500μH,
Test Circuit Figure 24||-|15|21|ns| |Current Rise Time|trI|||-|13|18|ns| |Current Turn-Off Delay Time|td(OFF)I|||-|105|135|ns| |Current Fall Time|tfI|||-|55|73|ns| |Turn-On Energy (Note 3)|EON1|||-|115|-|μJ| |Turn-On Energy (Note 3)|EON2|||-|510|600|μJ| |Turn-Off Energy (Note 2)|EOFF|||-|330|500|μJ| ©2009 Fairchild Semiconductor Corporation HGTG20N60A4D Rev. C1 _**HGTG20N60A4D**_ **Electrical Specifications** TJ = 25[o] C, Unless Otherwise Specified **(Continued)** |**Electrical Specifications**
TJ= 25o|C, Unless Otherw|ise Specified **(Continued)**||||| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN**|**TYP**|**MAX**|**UNITS**| |Diode Forward Voltage|VEC|IEC= 20A|-|2.3|-|V| |Diode Reverse Recovery Time|trr|IEC= 20A, dIEC/dt = 200A/μs|-|35|-|ns| |||IEC= 1A, dIEC/dt = 200A/μs|-|26|-|ns| |Thermal Resistance Junction To Case|RθJC|IGBT|-|-|0.43|oC/W| |||Diode|-|-|1.9|oC/W| ## NOTE: 1. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 20. ## _**Typical Performance Curves**_ Unless Otherwise Specified **==> picture [231 x 164] intentionally omitted <==** **----- Start of picture text -----**
100
DIE CAPABILITY V GE = 15V
80
PACKAGE LIMIT
60
40
20
0
25 50 75 100 125 150
TC, CASE TEMPERATURE ( [o] C)
, DC COLLECTOR CURRENT (A)
ICE
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**FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE** **==> picture [229 x 166] intentionally omitted <==** **----- Start of picture text -----**
120
TJ = 150 [o] C, RG = 3 Ω , VGE = 15V, L = 100 μ H
100
80
60
40
20
0
0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
, COLLECTOR TO EMITTER CURRENT (A)
ICE
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**FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA** **==> picture [231 x 165] intentionally omitted <==** **----- Start of picture text -----**
500
TC VGE
75 [o] C 15V
300
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
100 fMAX2 = (PD - PC) / (EON2 + EOFF)
P C = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RÐêÐðJC = 0.43 [o] C/W, SEE NO
TJ = 125 [o] C, RG = 3 Ω , L = 500 μ H, V CE = 390V
40
5 10 20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
, OPERATING FREQUENCY (kHz)
fMAX
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**==> picture [230 x 166] intentionally omitted <==** **----- Start of picture text -----**
14 450
VCE = 390V, RG = 3 Ω , TJ = 125 [o] C
12 400
ISC
10 350
8 300
6 250
4 200
tSC
2 150
0 100
10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
s)
μ , PEAK SHORT CIRCUIT CURRENT (A)
, SHORT CIRCUIT WITHSTAND TIME (
tSC ISC
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**FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT** **FIGURE 4. SHORT CIRCUIT WITHSTAND TIME** ©2009 Fairchild Semiconductor Corporation HGTG20N60A4D Rev. C1 _**HGTG20N60A4D**_ ## _**Typical Performance Curves**_ Unless Otherwise Specified **(Continued)** **==> picture [229 x 167] intentionally omitted <==** **----- Start of picture text -----**
100
DUTY CYCLE < 0.5%, VGE = 12V
PULSE DURATION = 250 μ s
80
60
40
TJ = 125 [o] C
20
TJ = 150 [o] C TJ = 25 [o] C
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
, COLLECTOR TO EMITTER CURRENT (A)
ICE
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**==> picture [229 x 166] intentionally omitted <==** **----- Start of picture text -----**
100
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250 μ s
80
60
40
TJ = 125 [o] C
20
TJ = 150 [o] C TJ = 25 [o] C
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
, COLLECTOR TO EMITTER CURRENT (A)
ICE
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**FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE** **FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE** **==> picture [227 x 164] intentionally omitted <==** **----- Start of picture text -----**
1400
R G = 3 Ω , L = 500 μ H, V CE = 390V
1200
1000
TJ = 125 [o] C, VGE = 12V, VGE = 15V
800
600
400
200
TJ = 25 [o] C, VGE = 12V, VGE = 15V
0
5 10 15 20 25 30 35 40
ICE, COLLECTOR TO EMITTER CURRENT (A)
J)
μ
, TURN-ON ENERGY LOSS (
ON2
E
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**==> picture [229 x 163] intentionally omitted <==** **----- Start of picture text -----**
800
RG = 3 Ω , L = 500 μ H, VCE = 390V
700
600
500
TJ = 125 [o] C, VGE = 12V OR 15V
400
300
200
100 TJ = 25 [o] C, VGE = 12V OR 15V
0
5 10 15 20 25 30 35 40
ICE, COLLECTOR TO EMITTER CURRENT (A)
J)
μ
, TURN-OFF ENERGY LOSS (
OFF
E
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**FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT** **FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT** **==> picture [229 x 163] intentionally omitted <==** **----- Start of picture text -----**
22
RG = 3 Ω , L = 500 μ H, VCE = 390V
20
T J = 25 [o] C, T J = 125 [o] C, V GE = 12V
18
16
14
12
TJ = 25 [o] C, TJ = 125 [o] C, VGE = 15V
10
8
5 10 15 20 25 30 35 40
ICE, COLLECTOR TO EMITTER CURRENT (A)
(ns)
TURN-ON DELAY TIME
td(ON)I,
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**==> picture [227 x 163] intentionally omitted <==** **----- Start of picture text -----**
36
RG = 3 Ω , L = 500 μ H, VCE = 390V
32
28 T J = 25 [o] C, T J = 125 [o] C, V GE = 12V
24
20
16
12
8 T J = 25 [o] C OR T J = 125 [o] C, V GE = 15V
4
5 10 15 20 25 30 35 40
ICE, COLLECTOR TO EMITTER CURRENT (A)
(ns)
RISE TIME
trI,
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**FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT** **FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT** ©2009 Fairchild Semiconductor Corporation HGTG20N60A4D Rev. C1 _**HGTG20N60A4D**_ ## _**Typical Performance Curves**_ Unless Otherwise Specified **(Continued)** **==> picture [505 x 165] intentionally omitted <==** **----- Start of picture text -----**
120 80
R G = 3 Ω , L = 500 μ H, V CE = 390V RG = 3 Ω , L = 500 μ H, VCE = 390V
72
110
VGE = 12V, VGE = 15V, TJ = 125 [o] C 64 TJ = 125 [o] C, VGE = 12V OR 15V
100
56
90 48
40 TJ = 25 [o] C, VGE = 12V OR 15V
80
V GE = 12V, V GE = 15V, T J = 25 [o] C 32
70
24
60 16
5 10 15 20 25 30 35 40 5 10 15 20 25 30 35 40
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
(ns)
(ns)
, FALL TIME
tfI
, TURN-OFF DELAY TIME
td(OFF)I
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## **FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT** ## **FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT** **==> picture [229 x 374] intentionally omitted <==** **----- Start of picture text -----**
240
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250 μ s
200
160
120
TJ = 25 [o] C
80
TJ = 125 [o] C
40 TJ = -55 [o] C
0
6 7 8 9 10 11 12
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
1.8
RG = 3 Ω , L = 500 μ H, VCE = 390V, VGE = 15V
1.6
ETOTAL = EON2 + EOFF
1.4
1.2
ICE = 30A
1.0
0.8
ICE = 20A
0.6
0.4
ICE = 10A
0.2
0
25 50 75 100 125 150
TC, CASE TEMPERATURE ( [o] C)
, COLLECTOR TO EMITTER CURRENT (A)
ICE
, TOTAL SWITCHING ENERGY LOSS (mJ)
TOTAL
E
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**==> picture [231 x 374] intentionally omitted <==** **----- Start of picture text -----**
16
IG(REF)IG(REF) = 1mA, R = 1mA, RLL = 15 = 15 ΩΩ , T, TJJ = 25 = 25 [o][o] CC
14
12 VCE = 600V
VCE = 400V
10
8
6 VCE = 200V
4
2
0
0 20 40 60 80 100 120 140 160
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
T J = 125 [o] C, L = 500 μ H, V CE = 390V, V GE = 15V
ETOTAL = EON2 + EOFF
10
ICE = 30A
1
ICE = 20A
ICE = 10A
0.1
3 10 100 1000
RG, GATE RESISTANCE ( Ω )
, GATE TO EMITTER VOLTAGE (V)
GE
V
, TOTAL SWITCHING ENERGY LOSS (mJ)
TOTAL
E
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**FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE** **FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE** ©2009 Fairchild Semiconductor Corporation HGTG20N60A4D Rev. C1 _**HGTG20N60A4D**_ ## _**Typical Performance Curves**_ Unless Otherwise Specified **(Continued)** **==> picture [231 x 163] intentionally omitted <==** **----- Start of picture text -----**
5
FREQUENCY = 1MHz
4
3
CIES
2
1 C OES
CRES
0
0 20 40 60 80 100
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
C, CAPACITANCE (nF)
**----- End of picture text -----**
**==> picture [229 x 170] intentionally omitted <==** **----- Start of picture text -----**
2.2
DUTY CYCLE < 0.5%, TJ = 25 [o] C
PULSE DURATION = 250 μ s
2.1
2.0
ICE = 30A
1.9 ICE = 20A
1.8
ICE = 10A
1.7
8 9 10 11 12 13 14 15 16
VGE, GATE TO EMITTER VOLTAGE (V)
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
V
**----- End of picture text -----**
## **FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE** **FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs GATE TO EMITTER VOLTAGE** **==> picture [231 x 165] intentionally omitted <==** **----- Start of picture text -----**
30
DUTY CYCLE < 0.5%,
PULSE DURATION = 250 μ s
25
20
125 [o] C
15
25 [o] C
10
5
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VEC, FORWARD VOLTAGE (V)
, FORWARD CURRENT (A)
IEC
**----- End of picture text -----**
**==> picture [227 x 165] intentionally omitted <==** **----- Start of picture text -----**
90
dIEC/dt = 200A/ μ s
80
125 [o] C trr
70
60 125 [o] C tb 125 [o] C ta
50
40
30
25 [o] C t rr
20
25 [o] C ta
10
25 [o] C tb
0
0 4 8 12 16 20
IEC, FORWARD CURRENT (A)
, RECOVERY TIMES (ns)
trr
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**FIGURE 19. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP** **FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT** **==> picture [231 x 166] intentionally omitted <==** **----- Start of picture text -----**
50
IEC = 20A, VCE = 390V
40
125 [o] C ta
30
125 [o] C tb
20
25 [o] C ta
10
25 [o] C tb
0
200 300 400 500 600 700 800 900 1000
diEC/dt, RATE OF CHANGE OF CURRENT (A/ μ s)
, RECOVERY TIMES (ns)
trr
**----- End of picture text -----**
**==> picture [233 x 164] intentionally omitted <==** **----- Start of picture text -----**
800
VCE = 390V
125 [o] C, IEC = 20A
600
125 [o] C, IEC = 10A
400
25 [o] C, IEC = 20A
200
25 [o] C, IEC = 10A
0
200 300 400 500 600 700 800 900 1000
diEC/dt, RATE OF CHANGE OF CURRENT (A/ μ s)
Qrr, REVERSE RECOVERY CHARGE (nC)
**----- End of picture text -----**
**FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF CURRENT** **FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF CURRENT** ©2009 Fairchild Semiconductor Corporation HGTG20N60A4D Rev. C1 _**HGTG20N60A4D**_ ## _**Typical Performance Curves**_ Unless Otherwise Specified **(Continued)** **==> picture [469 x 165] intentionally omitted <==** **----- Start of picture text -----**
10 [0]
0.5
0.2
0.1
10 [-1]
0.05
0.02
0.01 t 1
PD
10 [-2] DUTY FACTOR, D = t1 / t2
SINGLE PULSE PEAK TJ = (PD X Z θ JC X R θ JC) + TC t2
10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]
t1, RECTANGULAR PULSE DURATION (s)
NORMALIZED THERMAL RESPONSE
JC,
θ
Z
**----- End of picture text -----**
**FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE** ## _**Test Circuit and Waveforms**_ **==> picture [203 x 150] intentionally omitted <==** **----- Start of picture text -----**
HGTG20N60A4D
DIODE TA49372
L = 500 μ H
RG = 3 Ω
DUT
+
VDD = 390V
-
**----- End of picture text -----**
**FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT** **==> picture [235 x 151] intentionally omitted <==** **----- Start of picture text -----**
90%
VGE 10%
EON2
EOFF
VCE
90%
ICE 10%
td(OFF)I trI
tfI
td(ON)I
**----- End of picture text -----**
**FIGURE 25. SWITCHING TEST WAVEFORMS** ©2009 Fairchild Semiconductor Corporation HGTG20N60A4D Rev. C1 _**HGTG20N60A4D**_ ## _**Handling Precautions for IGBTs**_ Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. **Gate Voltage Rating** - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. **Gate Termination** - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. **Gate Protection** - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ## _**Operating Frequency Information**_ Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 25. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 25. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). ©2009 Fairchild Semiconductor Corporation HGTG20N60A4D Rev. C1 ## **TRADEMARKS** The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. |ACEx™
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