# IGBT, 54 A, 2.7 V, 167 W, 600 V, TO-247, 3 Pins ![Product image](https://novapart.co/image/farnell:1057677/) **URL**: https://novapart.co/products/HGTG12N60A4D/igbt-54-a-27-v-167-w-600-to-247-3-pins **SKU**: HGTG12N60A4D **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €2.3800 **Stock**: 10+ ## Description DC Collector Current:54A; Collector Emitter Saturation Voltage Vce(on):2.7V; Power Dissipation Pd:167W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Te ## Specifications | Parameter | Value | |---|---| | Msl | - | | No. Of Pins | 3Pins | | Product Range | - | | Power Dissipation | 167W | | Transistor Mounting | Through Hole | | Transistor Case Style | TO-247 | | Operating Temperature Max | 150°C | | Continuous Collector Current | 54A | | Collector Emitter Voltage Max | 600V | | Collector Emitter Saturation Voltage | 2.7V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1057677/) ## **Is Now Part of** **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. _**HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS**_ ## _**Data Sheet**_ ## _**December 2001**_ ## _**600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode**_ The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25[o] C and 150[o] C. The IGBT used is the development type TA49335. The diode used in anti-parallel is the development type TA49371. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49337. ## _**Ordering Information**_ **PART NUMBER PACKAGE BRAND** HGTG12N60A4D TO-247 12N60A4D HGTP12N60A4D TO-220AB 12N60A4D HGT1S12N60A4DS TO-263AB 12N60A4D ~~===~~ NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, e.g. HGT1S12N60A4DS9A. ## _**Symbol**_ **==> picture [51 x 84] intentionally omitted <==** **----- Start of picture text -----**
C
G
E
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## _**Features**_ - >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A - 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A - 600V Switching SOA Capability - Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125[o] C - Low Conduction Loss - _Temperature Compensating_ SABER™ Model www.fairchildsermi.com - Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards ## _**Packaging**_ **==> picture [181 x 71] intentionally omitted <==** **----- Start of picture text -----**
JEDEC TO-220AB ALTERNATE VERSION
COLLECTOR
(FLANGE)
E
sy C
G
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JEDEC TO-263AB
COLLECTOR
G (FLANGE)
E
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JEDEC STYLE TO-247
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E
C
G
COLLECTOR
(FLANGE)
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**Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS** 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ©2001 Fairchild Semiconductor Corporation HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B _**HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS**_ **Absolute Maximum Ratings** TC = 25[o] C, Unless Otherwise Specified |**Absolute Maximum Ratings** TC= 25oC, Unless Otherwise Specified||| |---|---|---| ||**HGTG12N60A4D,**|| ||**HGTP12N60A4D,**|| ||**HGT1S12N60A4DS**|**UNITS**| |Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES|600|V| |Collector Current Continuous||| |At TC= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25|54|A| |At TC= 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110|23|A| |Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM|96|A| |Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES|±20|V| |Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM|±30|V| |Switching Safe Operating Area at TJ= 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA|60A at 600V|| |Power Dissipation Total at TC= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD|167|W| |Power Dissipation Derating TC> 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|1.33|W/oC| |Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG|-55 to 150|oC| |Maximum Temperature for Soldering||| |Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL|300|oC| |Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg|260|oC| _CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied._ ## NOTE: 1. Pulse width limited by maximum junction temperature. |**Electrical Specifications**
TJ= 25oC, Unless Otherwise Specified|**Electrical Specifications**
TJ= 25oC, Unless Otherwise Specified|**Electrical Specifications**
TJ= 25oC, Unless Otherwise Specified|**Electrical Specifications**
TJ= 25oC, Unless Otherwise Specified||||| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN**|**TYP**|**MAX**|**UNITS**| |Collector to Emitter Breakdown Voltage|BVCES|IC= 250µA, VGE= 0V||600|-|-|V| |Collector to Emitter Leakage Current|ICES|VCE= 600V|TJ= 25oC|-|-|250|µA| ||||TJ= 125oC|-|-|2.0|mA| |Collector to Emitter Saturation Voltage|VCE(SAT)|IC= 12A,
VGE= 15V|TJ= 25oC|-|2.0|2.7|V| ||||TJ= 125oC|-|1.6|2.0|V| |Gate to Emitter Threshold Voltage|VGE(TH)|IC= 250µA, VCE= 600V||-|5.6|-|V| |Gate to Emitter Leakage Current|IGES|VGE=±20V||-|-|±250|nA| |Switching SOA|SSOA|TJ= 150oC, RG= 10Ω, VGE= 15V,
L = 100µH, VCE= 600V||60|-|-|A| |Gate to Emitter Plateau Voltage|VGEP|IC= 12A, VCE= 300V||-|8|-|V| |On-State Gate Charge|Qg(ON)|IC= 12A,
VCE= 300V|VGE= 15V|-|78|96|nC| ||||VGE= 20V|-|97|120|nC| |Current Turn-On Delay Time|td(ON)I|IGBT and Diode at TJ= 25oC,
ICE= 12A,
VCE= 390V,
VGE= 15V,
RG= 10Ω,
L = 500µH,
Test Circuit (Figure 24)||-|17|-|ns| |Current Rise Time|trI|||-|8|-|ns| |Current Turn-Off Delay Time|td(OFF)I|||-|96|-|ns| |Current Fall Time|tfI|||-|18|-|ns| |Turn-On Energy (Note 3)|EON1|||-|55|-|µJ| |Turn-On Energy (Note 3)|EON2|||-|160|-|µJ| |Turn-Off Energy (Note 2)|EOFF|||-|50|-|µJ| |Current Turn-On Delay Time|td(ON)I|IGBT and Diode at TJ= 125oC,
ICE= 12A,
VCE= 390V, VGE= 15V,
RG= 10Ω,
L = 500µH,
Test Circuit (Figure 24)||-|17|-|ns| |Current Rise Time|trI|||-|16|-|ns| |Current Turn-Off Delay Time|td(OFF)I|||-|110|170|ns| |Current Fall Time|tfI|||-|70|95|ns| |Turn-On Energy (Note3)|EON1|||-|55|-|µJ| |Turn-On Energy (Note 3)|EON2|||-|250|350|µJ| |Turn-Off Energy (Note 2)|EOFF|||-|175|285|µJ| ©2001 Fairchild Semiconductor Corporation HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B _**HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS**_ **Electrical Specifications** TJ = 25[o] C, Unless Otherwise Specified **(Continued)** |**Electrical Specifications**
TJ= 25o|C, Unless Otherw|ise Specified **(Continued)**||||| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN**|**TYP**|**MAX**|**UNITS**| |Diode Forward Voltage|VEC|IEC= 12A|-|2.2|-|V| |Diode Reverse Recovery Time|trr|IEC= 12A, dIEC/dt = 200A/µs|-|30|-|ns| |||IEC= 1A, dIEC/dt = 200A/µs|-|18|-|ns| |Thermal Resistance Junction To Case|RθJC|IGBT|-|-|0.75|oC/W| |||Diode|-|-|2.0|oC/W| ## NOTES: 2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 24. ## _**Typical Performance Curves**_ Unless Otherwise Specified **==> picture [234 x 162] intentionally omitted <==** **----- Start of picture text -----**
60
VGE = 15V,
50
40
30
20
10
0
25 50 75 100 125 150
TC, CASE TEMPERATURE ( [o] C)
, DC COLLECTOR CURRENT (A)
ICE
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70
TJ = 150 [o] C, RG = 10 Ω , VGE = 15V, L = 200 µ H
60
50
40
30
20
10
0
0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
, COLLECTOR TO EMITTER CURRENT (A)
ICE
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**FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE** **FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA** **==> picture [236 x 165] intentionally omitted <==** **----- Start of picture text -----**
500
300 TC VGE
75 [o] C 15V
100
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.75 [o] C/W, SEE NOTES
TJ = 125 [o] C, RG = 10 Ω , L = 500 µ H, V CE = 390V
10
1 3 10 20 30
ICE, COLLECTOR TO EMITTER CURRENT (A)
, OPERATING FREQUENCY (kHz)
fMAX
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20 300
VCE = 390V, RG = 10 Ω , TJ = 125 [o] C
18 275
16 250
14 225
ISC
12 200
10 175
8 150
6 125
tSC
4 100
2 75
0 50
9 10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
s)
µ
, PEAK SHORT CIRCUIT CURRENT (A)
, SHORT CIRCUIT WITHSTAND TIME (tSC ISC
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**FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT** **FIGURE 4. SHORT CIRCUIT WITHSTAND TIME** ©2001 Fairchild Semiconductor Corporation HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B _**HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS**_ ## _**Typical Performance Curves**_ Unless Otherwise Specified **(Continued)** **==> picture [228 x 169] intentionally omitted <==** **----- Start of picture text -----**
24
DUTY CYCLE < 0.5%, VGE = 12V
PULSE DURATION = 250 µ s
20
16
T J = 150 [o] C
12
TJ = 125 [o] C
8
4
TJ = 25 [o] C
0
0 0.5 1.0 1.5 2 2.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
, COLLECTOR TO EMITTER CURRENT (A)
ICE
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**==> picture [230 x 168] intentionally omitted <==** **----- Start of picture text -----**
24
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250 µ s
20
16
T J = 150 [o] C
12
TJ = 125 [o] C
8
TJ = 25 [o] C
4
0
0 0.5 1.0 1.5 2 2.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
, COLLECTOR TO EMITTER CURRENT (A)
ICE
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**FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE** **FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE** **==> picture [232 x 165] intentionally omitted <==** **----- Start of picture text -----**
700
RG = 10 Ω , L = 500 µ H, VCE = 390V
600
TJ = 125 [o] C, VGE = 12V, VGE = 15V
500
400
300
200
100 TJ = 25 [o] C, VGE = 12V, VGE = 15V
0
2 4 6 8 10 12 14 16 18 20 22 24
ICE , COLLECTOR TO EMITTER CURRENT (A)
J)
µ
, TURN-ON ENERGY LOSS (
ON2
E
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**==> picture [234 x 164] intentionally omitted <==** **----- Start of picture text -----**
400
RG = 10 Ω , L = 500 µ H, VCE = 390V
350
300
250 TJ = 125 [o] C, VGE = 12V OR 15V
200
150
100
50
TJ = 25 [o] C, VGE = 12V OR 15V
0
2 4 6 8 10 12 14 16 18 20 22 24
ICE, COLLECTOR TO EMITTER CURRENT (A)
J)
µ
, TURN-OFF ENERGY LOSS (
OFF
E
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**FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT** **FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT** **==> picture [232 x 164] intentionally omitted <==** **----- Start of picture text -----**
18
RG = 10 Ω , L = 500 µ H, VCE = 390V
17
16
15 TJ = 25 [o] C, TJ = 125 [o] C, VGE = 12V
14
13
12
TJ = 25 [o] C, TJ = 125 [o] C, VGE = 15V
11
10
2 4 6 8 10 12 14 16 18 20 22 24
ICE, COLLECTOR TO EMITTER CURRENT (A)
(ns)
TURN-ON DELAY TIME
td(ON)I,
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**==> picture [234 x 162] intentionally omitted <==** **----- Start of picture text -----**
32
RG = 10 Ω , L = 500 µ H, VCE = 390V
28
24
TJ = 125 [o] C OR TJ = 25 [o] C, VGE = 12V
20
16
12
8
TJ = 25 [o] C OR TJ = 125 [o] C, VGE = 15V
4
0
2 4 6 8 10 12 14 16 18 20 22 24
ICE, COLLECTOR TO EMITTER CURRENT (A)
(ns)
RISE TIME
trI,
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**FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT** **FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT** ©2001 Fairchild Semiconductor Corporation HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B _**HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS**_ ## _**Typical Performance Curves**_ Unless Otherwise Specified **(Continued)** **==> picture [234 x 164] intentionally omitted <==** **----- Start of picture text -----**
115
RG = 10 Ω , L = 500 µ H, VCE = 390V
110
VGE = 12V, VGE = 15V, TJ = 125 [o] C
105
100
95
VGE = 12V, VGE = 15V, TJ = 25 [o] C
90
85
2 4 6 8 10 12 14 16 18 20 22 24
ICE, COLLECTOR TO EMITTER CURRENT (A)
(ns)
, TURN-OFF DELAY TIME
td(OFF)I
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90
RG = 10 Ω , L = 500 µ H, VCE = 390V
80
70
TJ = 125 [o] C, VGE = 12V OR 15V
60
50
40
30
TJ = 25 [o] C, VGE = 12V OR 15V
20
10
2 4 6 8 10 12 14 16 18 20 22 24
ICE, COLLECTOR TO EMITTER CURRENT (A)
(ns)
, FALL TIME
tfI
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## **FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT** **FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT** **==> picture [232 x 167] intentionally omitted <==** **----- Start of picture text -----**
250
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250 µ s
200 TJ = 25 [o] C
150 TJ = -55 [o] C
100 TJ = 125 [o] C
50
0
6 7 8 9 10 11 12 13 14 15 16
VGE, GATE TO EMITTER VOLTAGE (V)
, COLLECTOR TO EMITTER CURRENT (A)
ICE
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**FIGURE 13. TRANSFER CHARACTERISTIC** **==> picture [234 x 156] intentionally omitted <==** **----- Start of picture text -----**
1.2
RG = 10 Ω , L = 500 µ H, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
1.0
0.8
ICE = 24A
0.6
0.4
ICE = 12A
0.2
ICE = 6A
0
25 50 75 100 125 150
TC, CASE TEMPERATURE ( [o] C)
, TOTAL SWITCHING
ENERGY LOSS (mJ)
TOTAL
E
**----- End of picture text -----**
**==> picture [234 x 372] intentionally omitted <==** **----- Start of picture text -----**
16
IG(REF) = 1mA, RL = 25 Ω , TC = 25 [o] C
14
12
VCE = 600V
10 V CE = 400V
8
6 VCE = 200V
4
2
0
0 10 20 30 40 50 60 70 80
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
10
TJ = 125 [o] C, L = 500 µ H,
VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
ICE = 24A
1
ICE = 12A
I CE = 6A
0.1
5 10 100 1000
RG, GATE RESISTANCE ( Ω )
, GATE TO EMITTER VOLTAGE (V)
GE
V
, TOTAL SWITCHING
ENERGY LOSS (mJ)
TOTAL
E
**----- End of picture text -----**
**FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE** **FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE** ©2001 Fairchild Semiconductor Corporation HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B _**HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS**_ ## _**Typical Performance Curves**_ Unless Otherwise Specified **(Continued)** **==> picture [233 x 163] intentionally omitted <==** **----- Start of picture text -----**
3.0
FREQUENCY = 1MHz
2.5
2.0
CIES
1.5
1.0
COES
0.5
CRES
0
0 5 10 15 20 25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
C, CAPACITANCE (nF)
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**==> picture [233 x 168] intentionally omitted <==** **----- Start of picture text -----**
2.4
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250 µ s, TJ = 25 [o] C
2.3
2.2
I CE = 18A
2.1
ICE = 12A
2.0
ICE = 6A
1.9
8 9 10 11 12 13 14 15 16
VGE, GATE TO EMITTER VOLTAGE (V)
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
V
**----- End of picture text -----**
## **FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE** **FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs GATE TO EMITTER VOLTAGE** **==> picture [234 x 377] intentionally omitted <==** **----- Start of picture text -----**
14
DUTY CYCLE < 0.5%,
12 PULSE DURATION = 250 µ s
125 [o] C 25 [o] C
10
8
6
4
2
0
0 0.5 1.0 1.5 2.0 2.5
VEC, FORWARD VOLTAGE (V)
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
65
60 IEC = 12A, VCE = 390V
55 125 [o] C tb
50
45
40
35 125 [o] C ta
30
25
20
25 [o] C ta
15
10 25 [o] C t b
5
200 300 400 500 600 700 800 900 1000
diEC/dt, RATE OF CHANGE OF CURRENT (A/ µ s)
, FORWARD CURRENT (A)
IEC
, RECOVERY TIMES (ns)
trr
**----- End of picture text -----**
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90
dIEC/dt = 200A/ µ s
80
70 125 [o] C t rr
60 125 [o] C t b
50
40
125 [o] C ta
30
20 25 [o] C trr
25 [o] C t a
10
25 [o] C tb
0
1 2 3 4 5 6 7 8 9 10 11 12
IEC, FORWARD CURRENT (A)
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
400
VCE = 390V
350 125 [o] C IEC = 12A
300
125 [o] C IEC = 6A
250
200
150 25 [o] C IEC = 12A
100
50 25 [o] C IEC = 6A
0
200 300 400 500 600 700 800 900 1000
diEC/dt, RATE OF CHANGE OF CURRENT (A/ µ s)
, RECOVERY TIMES (ns)
trr
, REVERSE RECOVERY CHARGE (nc)
rr
Q
**----- End of picture text -----**
**FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF CURRENT** **FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF CURRENT** ©2001 Fairchild Semiconductor Corporation HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B _**HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS**_ ## _**Typical Performance Curves**_ Unless Otherwise Specified **(Continued)** **==> picture [478 x 164] intentionally omitted <==** **----- Start of picture text -----**
10 [0]
0.50
0.20
0.10 t1
10 [-1]
0.05 PD
t2
0.02
0.01 DUTY FACTOR, D = t1 / t2
PEAK T J = (P D X Z θ JC X R θ JC ) + T C
SINGLE PULSE
10 [-2]
10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1]
t1, RECTANGULAR PULSE DURATION (s)
NORMALIZED THERMAL RESPONSE
JC,
θ
Z
**----- End of picture text -----**
**FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE** ## _**Test Circuit and Waveforms**_ **==> picture [203 x 150] intentionally omitted <==** **----- Start of picture text -----**
HGTP12N60A4D
DIODE TA49371
L = 500 µ H
RG = 10 Ω
DUT
+
VDD = 390V
-
**----- End of picture text -----**
**==> picture [236 x 152] intentionally omitted <==** **----- Start of picture text -----**
90%
VGE 10%
EON2
EOFF
VCE
90%
ICE 10%
td(OFF)I trI
tfI
td(ON)I
**----- End of picture text -----**
**FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT** **FIGURE 25. SWITCHING TEST WAVEFORMS** ©2001 Fairchild Semiconductor Corporation HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B _**HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS**_ ## _**Handling Precautions for IGBTs**_ Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. **Gate Voltage Rating** - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. **Gate Termination** - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. **Gate Protection** - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ## _**Operating Frequency Information**_ Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 25. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 25. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). ©2001 Fairchild Semiconductor Corporation HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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