# Bipolar (BJT) Single Transistor, NPN, 800 V, 24 A, 75 W, ISOWATT-218FX, Through Hole

![Product image](https://novapart.co/image/farnell:2341715/)

**URL**: https://novapart.co/products/HD1750FX/bipolar-bjt-single-transistor-npn-800-v-24-a-75-w
**SKU**: HD1750FX
**Manufacturer**: STMICROELECTRONICS
**Price**: €2.1000
**Stock**: 10+
**Lead Time**: 113 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:800V; Transition Frequency ft:-; Power Dissipation Pd:75W; DC Collector Current:24A; DC Current Gain hFE:6.5hFE; Transistor Cas

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 75W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | - |
| Transistor Case Style | ISOWATT-218FX |
| Dc Current Gain Hfe Min | 6.5hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 24A |
| Collector Emitter Voltage Max | 800V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2341715/)

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## **HD1750FX** 

## HIGH VOLTAGE NPN POWER TRANSISTOR FOR HIGH DEFINITION AND NEW SUPER-SLIM CRT DISPLAYS 

- STATE-OF-THE-ART TECHNOLOGY: DIFFUSED COLLECTOR "ENHANCED GENERATION" EHVS1 

- WIDER RANGE OF OPTIMUM DRIVE CONDITIONS 

- LESS SENSITIVE TO OPERATING TEMPERATURE VARIATION 

- FULLY INSULATED POWER PACKAGE U.L. COMPLIANT 

## **APPLICATIONS** 

## **Figure 1: Package** 

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**ISOWATT218FX** 

- HORIZONTAL DEFLECTION OUTPUT FOR DIGITAL TV, HDTV AND HIGH-END MONITORS 

## **Figure 2: Internal Schematic Diagram** 

## **DESCRIPTION** 

The device is manufactured using Diffused Collector in Planar technology adopting "Enhance High Voltage Structure" (EHVS1) developed to fit High-Definition CRT displays. 

The new HD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. 

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**Table 1: Order Codes** 

|**Table 1: Order Codes**||||
|---|---|---|---|
|**Part Number**|**Marking**|**Package**|**Packaging**|
|HD1750FX|HD1750FX|ISOWATT218FX|TUBE|



Rev. 2 

December 2005 

1/8 

**HD1750FX** 

**Table 2: Absolute Maximum Ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCES|Collector-Emitter Voltage  (VBE= 0)|1700|V|
|VCEO|Collector-Emitter Voltage (IB= 0)|800|V|
|VEBO|Emitter-Base Voltage (IC= 0)|10|V|
|IC|Collector Current|24|A|
|ICM|Collector Peak Current (tp< 5ms)|36|A|
|IB|Base Current|12|A|
|IBM|Base Peak Current (tp< 5ms)|18|A|
|Ptot|Total Dissipation at TC= 25oC|75|W|
|Vins|Insulation Withstand Voltage (RMS) from All Three Leads to<br>External Heatsink|2500|V|
|Tstg|Storage Temperature|-65 to 150|°C|
|TJ|Max. Operating Junction Temperature|150|°C|



## **Table 3: Thermal Data** 

Rthj-case Thermal Resistance Junction-Case                     Max 1.67 oC/W 

**Table 4: Electrical Characteristics (Tcase = 25[o] C unless otherwise specified)** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ICES|Collector Cut-off Current<br>(VBE= 0)|VCE= 1700 V<br>VCE= 1700 V                 TC= 125oC|||0.2<br>2|mA<br>mA|
|IEBO|Emitter Cut-off Current<br>(IC= 0)|VEB= 5 V|||10|µA|
|VCEO(sus)*|Collector-Emitter<br>Sustaining Voltage<br>(IB= 0 )|IC= 10 mA|800|||V|
|VEBO|Emitter-Base Voltage<br>(IC= 0 )|IE= 10 mA|10|||V|
|VCE(sat)*|Collector-Emitter<br>Saturation Voltage|IC= 12 A                         IB= 3 A|||3|V|
|VBE(sat)*|Base-Emitter Saturation<br>Voltage|IC= 12 A                         IB= 3 A||0.95|1.5|V|
|hFE|DC Current Gain|IC= 1 A                           VCE= 5 V<br>IC= 12 A                         VCE= 5 V|6.5|30|9.5||
|ts<br>tf|INDUCTIVE LOAD<br>Storage Time<br>Fall Time|IC= 12 A                         fh= 31250 Hz<br>IB(on)= 1.9 A                   IB(off)= -8.1 A<br>VCE(fly)= 1320 V             VBE(off)= -2.7 V<br>LBB(off)= 0.8 µH||3.1<br>350|3.8<br>500|µs<br>ns|
|ts<br>tf|INDUCTIVE LOAD<br>Storage Time<br>Fall Time|IC= 6.5 A                        fh= 100 kHz<br>IB(on)= 1.2 A                    IB(off)= -5.85 A<br>VCE(fly)= 1220 V             VBE(off)= -2.7 V<br>LBB(off)= 0.25 µH||1.7<br>180|2<br>250|µs<br>ns|



* Pulsed: Pulsed duration = 300 m s, duty cycle ≤ 1.5 %. 

2/8 

**HD1750FX** 

**Figure 3: Safe Operating Area** 

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**Figure 4: Output Chatacterisctics** 

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**Figure 5: DC Current Gain** 

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**Figure 6: Derating Curve** 

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**Figure 7: Reverse Biased SOA** 

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**Figure 8: DC Current Gain** 

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3/8 

**HD1750FX** 

**Figure 9: Collector-Emitter Saturation Voltage** 

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**Figure 10: Power Losses** 

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**Figure 11:  Inductive Load Switching Time** 

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**Figure 12: Base-Emitter Saturation Voltage** 

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**Figure 13: Power Losses** 

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**Figure 14: Inductive Load Switching Time** 

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4/8 

**HD1750FX** 

**Figure 15: Power Losses and Inductive Load Switching Test Circuit** 

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**Figure 16: Reverse Biased Safe Operating Area Test Circuit** 

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5/8 

**HD1750FX** 

## **ISOWATT218FX MECHANICAL DATA** 

|||||
|---|---|---|---|
|**DIM.**|**mm.**|||
||**MIN.**|**TYP**|**MAX.**|
|A|5.30||5.70|
|C|2.80||3.20|
|D|3.10||3.50|
|D1|1.80||2.20|
|E|0.80||1.10|
|F|0.65||0.95|
|F2|1.80||2.20|
|G|10.30||11.50|
|G1||5.45||
|H|15.30||15.70|
|L|9||10.20|
|L2|22.80||23.20|
|L3|26.30||26.70|
|L4|43.20||44.40|
|L5|4.30||4.70|
|L6|24.30||24.70|
|L7|14.60||15|
|N|1.80||2.20|
|R|3.80||4.20|
|Dia|3.40||3.80|
|||||



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6/8 

**HD1750FX** 

**Figure 5: Revision History** 

|**Release Date**|**Version**|**Change Designator**|
|---|---|---|
|30-May-2005|1|Initial Release.|
|19-Dec-2005|2|New hFEvalue in table 4|



7/8 

**HD1750FX** 

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 

The ST logo is a registered trademark of STMicroelectronics 

All other names are the property of their respective owners 

© 2005 STMicroelectronics - All Rights Reserved 

STMicroelectronics group of companies 

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**www.st.com** 

8/8 



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