# IGBT, 50 A, 2.45 V, 240 W, 600 V, TO-3P, 3 Pins

![Product image](https://novapart.co/image/farnell:1300816/)

**URL**: https://novapart.co/products/GT50J325/igbt-50-a-245-v-240-w-600-to-3p-3-pins
**SKU**: GT50J325
**Manufacturer**: TOSHIBA
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €8.3700
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 240W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-3P |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 50A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 2.45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1300816/)

GT50J325 

TOSHIBA Insulated Gate Bipolar Transistor  Silicon N Channel IGBT 

## **GT50J325** 

## High Power Switching Applications Fast Switching Applications 

Unit: mm 

The 4[th] generation 

Enhancement-mode 

Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 µs (typ.) 

Low switching loss : Eon = 1.30 mJ (typ.) 

: Eoff = 1.34 mJ (typ.) 

Low saturation Voltage: VCE (sat) = 2.0 V (typ.) 

FRD included between emitter and collector 

## **Maximum Ratings (Ta** 

## **25°C)** 

|**Maximum Ratings (Ta (Ta**<br>**25°C)**<br>7|**Maximum Ratings (Ta (Ta**<br>**25°C)**<br>7|**25°C)**|||
|---|---|---|---|---|
|Characteristics||Symbol|Rating|Unit|
|Collector-emitter voltage<br>~~ey~~||VCES<br>~~ey~~|600<br>~~ey~~|V<br>~~ey~~|
|Gate-emitter voltage<br>~~ey~~||VGES<br>~~ey~~|20<br>~~ey~~|V<br>~~ey~~|
|Collector current|DC|IC|50|A|
||1 ms|ICP|100||
|Emitter-collector forward<br>current|DC|IF|50|A|
||1 ms|IFM|100||
|Collector power dissipation<br>(Tc  25°C)||PC|240|W|
|Junction temperature||Tj|150|°C|
|Storage temperature range||Tstg|55 to 150|°C|



|JEDEC|―|
|---|---|
|JEITA|―|
|TOSHIBA|2-21F2C|
|Weight: 9.75 g||



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|Characteristics|Symbol|Max|Unit|
|Thermal resistance (IGBT)|Rth (j-c)|0.521|°C/W|
|Thermal resistance (diode)|Rth (j-c)|2.30|°C/W|



## **Equivalent Circuit** 

Collector Gate Emitter 

1 

GT50J325 

## **Electrical Characteristics (Ta � 25°C)** 

|Characteristics|Characteristics|Symbol|Test Condition|Min|Typ.|Max|Unit|
|---|---|---|---|---|---|---|---|
|Gate leakage current||IGES|VGE � �20 V, VCE �0|�|�|�500|nA|
|Collector cut-off current||ICES|VCE �600 V, VGE �0|�|�|1.0|mA|
|Gate-emitter cut-off voltage||VGE (OFF)|IC �5 mA, VCE �5 V|3.5|�|6.5|V|
|Collector-emitter saturation voltage||VCE (sat)|IC �50 A, VGE �15 V|�|2.0|2.45|V|
|Input capacitance||Cies|VCE �10 V, VGE �0, f�1 MHz|�|7900|�|pF|
|Switching time|Turn-on delay time|td (on)|Inductive load<br>VCC �300 V, IC �50 A<br>VGG � �15 V, RG �13�<br>(Note 1)<br>(Note 2)|�|0.09|�|�s|
||Rise time|tr||�|0.07|�||
||Turn-on time|ton||�|0.24|�||
||Turn-off delay time|td (off)||�|0.30|�||
||Fall time|tf||�|0.05|�||
||Turn-off time|toff||�|0.43|�||
|Switching loss|Turn-on switching<br>loss|Eon||�|1.30|�|mJ|
||Turn-off switching<br>loss|Eoff||�|1.34|�||
|Peak forward voltage||VF|IF �50 A, VGE �0|�|�|4.2|V|
|Reverse recovery time||trr|IF �50 A, di/dt� �100 A/�s|�|65|�|ns|



Note 1: Switching time measurement circuit and input/output waveforms 

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**----- Start of picture text -----**<br>
VGE<br>90%<br>10%<br>0<br>�VGE<br>IC L VCC IC<br>90% 90%<br>RG<br>VCE VCE 10% 10% 10%  10%<br>0<br>td (off) td (on)<br>tf tr<br>toff ton<br>**----- End of picture text -----**<br>


Note 2: Switching loss measurement waveforms 

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VGE<br>90%<br>10%<br>0<br>IC<br>VCE 5%<br>0<br>Eoff Eon<br>**----- End of picture text -----**<br>


2 

GT50J325 

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**----- Start of picture text -----**<br>
IC – VCE<br>100<br>Common emitter<br>Tc � 25°C<br>20  15  10<br>80<br>60<br>40<br>8<br>20<br>VGE � 7 V<br>0<br>0  1  2  3  4  5<br>Collector-emitter voltage  VCE  (V)<br>  (A)<br>C<br>Collector current  I<br>**----- End of picture text -----**<br>


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VCE – VGE<br>20<br>Common emitter<br>Tc � 25°C<br>16<br>12<br>8 100<br>30  50<br>4<br>IC � 10 A<br>0<br>0  4  8  12  16  20<br>Gate-emitter voltage  VGE  (V)<br>IC – VGE<br>100<br>Common emitter<br>VCE � 5 V<br>80<br>60<br>40<br>20<br>Tc � 125°C  �40<br>25<br>0<br>0  4  8  12  16  20<br>Gate-emitter voltage  VGE  (V)<br>  (V)<br>CE<br>Collector-emitter voltage  V<br>  (A)<br>C<br>Collector current  I<br>**----- End of picture text -----**<br>


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VCE – VGE<br>20<br>Common emitter<br>Tc � �40°C<br>16<br>12<br>8 100<br>30 50<br>4<br>IC � 10 A<br>0<br>0 4 8 12  16  20<br>Gate-emitter voltage  VGE  (V)<br>  (V)<br>CE<br>Collector-emitter voltage  V<br>**----- End of picture text -----**<br>


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VCE – VGE<br>20<br>Common emitter<br>Tc � 125°C<br>16<br>12<br>100<br>8<br>30 50<br>4<br>IC � 10 A<br>0<br>0 4 8 12  16  20<br>Gate-emitter voltage  VGE  (V)<br>VCE (sat) – Tc<br>5<br>Common emitter<br>VGE � 15 V<br>4<br>100<br>70<br>3<br>50<br>30<br>2<br>IC � 10 A<br>1<br>0<br>�60 �20 20 60  100  140<br>Case temperature  Tc  (°C)<br>  (V)<br>CE<br>Collector-emitter voltage  V<br>  (V)<br>CE (sat)<br>  V<br>Collector-emitter saturation voltage<br>**----- End of picture text -----**<br>


3 

GT50J325 

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Switching time  ton, tr, td (on) – RG Switching time  ton, tr, td (on) – IC<br>10 10<br>Common emitter  Common emitter<br>3 VGG IC VCC � 50 A �� 300 V  15 V  3 RG VCC VGG � 13 ��: Tc  300 V  15 V �� 25°C<br>: Tc : Tc �� 25°C  125°C  : Tc � 125°C<br>1 (Note 1)<br>(Note 1)  1<br>ton<br>0.3 0.3<br>ton<br>0.1 0.1<br>td (on)  td (on)<br>tr<br>0.03 0.03 tr<br>0.01 0.01<br>1  3  10  30 100  300  1000 0 10 20 30  40  50<br>Gate resistance  RG  (�)  Collector current  IC  (A)<br>s)<br>s)  �<br>�   (<br>  ( d (on)<br>, t, td (on)r , t, tron<br>on Switching time  t<br>Switching time  t<br>**----- End of picture text -----**<br>


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Switching time  toff, tf, td (off) – RG<br>10<br>Common emitter<br>VCC � 300 V<br>VGG � 15 V<br>3 IC � 50 A<br>: Tc � 25°C<br>: Tc � 125°C<br>1 (Note 1)<br>toff<br>0.3<br>td (off)<br>0.1<br>tf<br>0.03<br>0.01<br>1  3  10  30 100  300  1000<br>Gate resistance  RG  (�)<br>Switching loss  Eon, Eoff – RG<br>30<br>Common emitter<br>VCC � 300 V<br>VGG � 15 V<br>10 I C � 50 A<br>: Tc � 25°C<br>: Tc � 125°C<br>(Note 2)<br>3 Eon<br>1 Eoff<br>0.3<br>0.1<br>1  3  10  30 100  300  1000<br>Gate resistance  RG  (�)<br>s)<br>�<br>  (<br>d (off)<br>, t, tf<br>off<br>Switching time  t<br>  (mJ)<br>off<br>, E<br>on<br>Switching loss  E<br>**----- End of picture text -----**<br>


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Switching time  toff, tf, td (off) – IC<br>10<br>Common emitter<br>VCC � 300 V<br>VGG � 15 V<br>3 RG � 13 �<br>: Tc � 25°C<br>: Tc � 125°C<br>(Note 1)<br>1<br>toff<br>0.3 td (off)<br>0.1<br>tf<br>0.03<br>0.01<br>0 10 20 30  40  50<br>Collector current  IC  (A)<br>Switching loss  Eon, Eoff – IC<br>10<br>Common emitter<br>VCC � 300 V<br>VGG � 15 V<br>RG � 13 �<br>: Tc � 25°C<br>3 : Tc � 125°C<br>(Note 2)<br>Eon<br>1<br>Eoff<br>0.3<br>0.1<br>0 10 20 30  40  50<br>Collector current  IC  (A)<br>s)<br>�<br>  (<br>d (off)<br>, t, tf<br>off<br>Switching time  t<br>  (mJ)<br>off<br>, E<br>on<br>Switching loss  E<br>**----- End of picture text -----**<br>


4 

GT50J325 

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C – VCE<br>30000<br>10000 Cies<br>3000<br>1000<br>300<br>Coes<br>100<br>Cres<br>Common emitter<br>30 VGE � 0<br>f � 1 MHz<br>Tc � 25°C<br>10<br>0.1  0.3  1  3  10 30  100  300  1000<br>Capacitance  C  (pF)<br>**----- End of picture text -----**<br>


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Collector-emitter voltage  VCE  (V)<br>**----- End of picture text -----**<br>


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IF – VF<br>100<br>Common collector<br>VGE � 0<br>80<br>60<br>Tc � 125°C  �40<br>40<br>25<br>20<br>0<br>0  1  2  3  4  5<br>Forward voltage  VF  (V)<br>  (A)<br>F<br>Forward current  I<br>**----- End of picture text -----**<br>


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Safe operating area<br>300<br>IC max (pulse)*<br>100 IC max (continuous)  50  � s*<br>30 100 �s*<br>10 DC operation<br>1 ms*<br>3<br>*: Single pulse<br>1 Tc � 25°C  10 ms*<br>Curves must be<br>derated linearly with<br>0.3 increase in<br>temperature.<br>0.1<br>1  3  10  30 100  300  1000<br>Collector-emitter voltage  VCE  (V)<br>  (A)<br>C<br>Collector current  I<br>**----- End of picture text -----**<br>


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VCE, VGE – QG<br>500 20<br>Common emitter<br>RL � 6 �<br>Tc � 25°C<br>400 16<br>300 12<br>300<br>200 8<br>200<br>VCE � 100 V<br>100 4<br>0 0<br>0 100 200  300  400<br>Gate charge  QG  (nC)<br>trr, Irr – IF<br>100 10000<br>Common collector<br>di/dt � �100 A/�s<br>VGE � 0<br>30 : Tc � 25°C  3000<br>: Tc � 125°C<br>10 1000<br>Irr<br>3 300<br>trr<br>1 100<br>0.3 30<br>0.1 10<br>0 10 20 30  40  50<br>Forward current  IF  (A)<br>Reverse bias SOA<br>300<br>100<br>30<br>10<br>3<br>1<br>0.3 Tj � [�] 125°C<br>VGE � 15 V<br>RG � 13 �<br>0.1<br>1 3 10 30 100  300  1000<br>Collector-emitter voltage  VCE  (V)<br>  (V)<br>CE   (V)<br>GE<br>Gate-emitter voltage  V<br>Collector-emitter voltage  V<br>  (A)<br>rr   (ns)<br>rr<br>Reverse recovery current  I Reverse recovery time  t<br>  (A)<br>C<br>Collector current  I<br>**----- End of picture text -----**<br>


5 

GT50J325 

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rth (t) – tw<br>10 [2] Tc � 25°C<br>10 [1]<br>FRD<br>10 [0]<br>IGBT<br>10 [�][1]<br>10 [�][2]<br>10 [�][3]<br>10 [�][4]<br>10 [�][5] 10 [�][4] 10 [�][3] 10 [�][2] 10 [�][1] 10 [0] 10 [1] 10 [2]<br>Pulse width  tw  (s)<br> (t)  (°C/W)<br>th<br>Transient thermal resistance  r<br>**----- End of picture text -----**<br>


6 

GT50J325 

## **RESTRICTIONS ON PRODUCT USE** 

000707EAA 

- �� TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. 

- In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. 

- �� The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. 

- �� The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. 

- �� The information contained herein is subject to change without notice. 

7 

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