# IGBT, 60 A, 2.15 V, 348 W, 1.35 kV, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:3941898/)

**URL**: https://novapart.co/products/GT30N135SRA,S1E(S/igbt-60-a-215-v-348-w-135-kv-to-247-3-pins
**SKU**: GT30N135SRA,S1E(S
**Manufacturer**: TOSHIBA
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €2.1800
**Stock**: 10+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 348W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 60A |
| Collector Emitter Voltage Max | 1.35kV |
| Collector Emitter Saturation Voltage | 2.15V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3941898/)

GT30N135SRA 

Discrete IGBTs Silicon N-Channel IGBT 

## GT30N135SRA 

## 1. Applications 

- Dedicated to Voltage-Resonant Inverter Switching Applications 

- Dedicated to Soft Switching Applications 

- Dedicated to Induction Cooktops and Home Appliance Applications 

Note: The product(s) described herein should not be used for any other application. Note 1: This transistor is sensitive to electrostatic discharge and should be handled with care. 

## 2. Features 

- (1) 6.5th generation 

- (2) The RC-IGBT consists of a freewheeling diode (FWD) monolithically integrated in an IGBT chip. 

- (3) Enhancement mode 

- (4) High-speed switching: 

   - IGBT  tf = 0.25 µs (typ.) (IC = 60 A) 

- (5) Low saturation voltage: VCE(sat) = 1.65 V (typ.) (IC = 30 A, Ta = 25 °C ) 

- (6) High junction temperature: Tj = 175 °C (max) 

## 3. Packaging and Internal Circuit 

**==> picture [334 x 75] intentionally omitted <==**

**----- Start of picture text -----**<br>
1: Gate<br>2: Collector(Heatsink)<br>3: Emitter<br>\ "5 3 Emitter<br>TO-247<br>**----- End of picture text -----**<br>


Start of commercial production 

2021-07 

©2021 Toshiba Electronic Devices & Storage Corporation 

2021-04-28 Rev.1.0 

1 

GT30N135SRA 

## 4. Absolute Maximum Ratings (Note) (Ta = 25 °C , unless otherwise specified) 

|Characteristics|Symbol|Rating|Unit|
|---|---|---|---|
|Collector-emitter voltage<br>(Note 2)<br>~~ee~~|VCES<br>~~ee~~|1350<br>~~ee~~|V<br>~~ee~~|
|Gate-emitter voltage<br>~~a~~|VGES<br>~~a~~<br>~~A~~|±25<br>~~a~~<br>~~ee~~|V<br>~~a~~<br>~~a~~|
|Collector current (DC)<br>(Tc= 25<br>)<br>~~oe~~|IC<br>~~oe~~<br>~~A~~|60<br>~~—~~<br>~~oe~~<br>~~ee~~|A<br>~~—~~<br>~~oe~~<br>~~a~~|
|Collector current (DC)<br>(Tc= 100<br>)<br>~~oe~~||30<br>~~oe~~<br>~~ee~~||
|Collector current (1 ms)<br>~~a~~|ICP<br>~~A ~~<br>~~a~~|120<br> ~~ee ~~<br>~~a~~|A<br> ~~a~~<br>~~a~~|
|Non-repetitive peak collector current<br>(Note 1)<br>~~a~~|ICSM<br>~~a~~<br>~~a~~|260<br>~~a~~<br>~~ee~~|A<br>~~a~~|
|Diode forward current (DC)<br>(Tc= 25<br>)<br>~~ee~~|IF<br>~~ee~~<br>~~a~~|60<br>~~oo~~<br>~~ee~~<br>~~ee~~|A<br>~~ee~~|
|Diode forward current (DC)<br>(Tc= 100<br>)<br>~~ee~~||30<br>~~ee~~<br>~~ee~~||
|Diode forward current (100µs)<br>~~a~~|IFP<br>~~a ~~<br>~~a~~|120<br> ~~ee~~<br>~~a~~|A<br>~~a~~|
|Collector power dissipation<br>(Tc= 25<br>)<br>~~a~~|PC<br>~~a~~|348<br>~~a~~|W<br>~~a~~|
|Junction temperature<br>(Note 2)<br>~~a~~|Tj<br>~~a~~|175<br>~~a~~|~~a~~|
|Storage temperature<br>~~a~~|Tstg<br>~~a~~|-55 to 175<br>~~a~~|~~a~~|
|Mounting torque<br>~~a~~|TOR<br>~~a~~|0.8<br>~~a~~|N<br>m<br>~~a~~|



Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. 

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 

In general, loss of IGBT increases more when it has positive temperature coefficient and gets higher temperature. 

In case that the temperature rise due to loss of IGBT exceeds the heat release capacity of a device, it leads to thermorunaway and results in destruction. 

Therefore, please design heat release of a device with due consideration to the temperature rise of IGBT. Note 1: The maximum value of the capacitor charging current limited on Tj < 175 °C and t < 3 µs Note 2: To perform derating ensures the device reliability. 

In operation, the collector emitter voltage(VCES) should be below 1150 V, as well as junction temperature(Tj) should be below 140 °C . 

## 5. Thermal Characteristics 

|Characteristics|Symbol|Max|Unit|
|---|---|---|---|
|Junction-to-case thermal resistance<br>~~a~~|Rth(j-c)<br>~~a~~|0.43<br>~~a~~|/W<br>~~a~~|



©2021 Toshiba Electronic Devices & Storage Corporation 

2021-04-28 Rev.1.0 

2 

GT30N135SRA 

## 6. Electrical Characteristics 

6.1. Static Characteristics (Ta = 25 °C , unless otherwise specified) 

|Characteristics<br>~~ee~~<br>~~a~~|Symbol<br>~~ee~~<br>~~ee~~|Test Condition<br>~~ee~~<br>~~ee~~|Min<br>~~ee~~<br>~~ee~~|Typ.<br>~~ee~~|Max<br>~~ee~~|Unit<br>~~ee~~|
|---|---|---|---|---|---|---|
|Gate leakage current<br>~~a~~|IGES<br>~~ee~~|VGE=±25 V, VCE= 0 V<br>~~ee ~~|~~ee~~||±100|nA|
|Collector cut-off current<br>~~a~~|ICES<br>~~a~~|VCE= 1350 V, VGE= 0 V<br>~~a~~|~~a~~|~~a~~|100<br>~~a~~|µA<br>~~a~~|
|Collector-emitter breakdown voltage<br>~~a~~|V(BR)CES<br>~~a~~|IC= 0.5 mA, VGE= 0 V<br>~~a~~|1350<br>~~a~~|~~a~~|~~a~~|V<br>~~a~~|
|Gate-emitter cut-off voltage<br>~~a~~|VGE(OFF)<br>~~a~~<br>~~re~~|IC= 60 mA, VCE= 5 V<br>~~a~~<br>~~re~~|5.3<br>~~a~~<br>~~ee~~|~~a~~<br>~~ee~~|7.3<br>~~a~~<br>~~ee~~|V<br>~~a~~|
|Collector-emitter saturation voltage<br>~~Pe~~|VCE(sat)(1)<br>~~re~~<br>~~ee~~<br>~~re~~|IC= 30 A, VGE= 15 V<br>(pulse test)<br>~~re~~<br>~~ee~~<br>~~re~~|~~ee~~<br>~~ee~~<br>~~ee~~<br>|1.65<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|1.95<br>~~ee~~<br>~~ee~~<br>|V<br>|
||VCE(sat)(2)<br>~~re~~<br>~~ee~~<br>~~re~~|IC= 30 A, VGE= 15 V,<br>Tc= 125<br> (pulse test)<br>~~re ~~<br>~~ee~~<br>~~re~~|~~ee~~<br>~~ee~~<br>~~ee~~<br>|1.90<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|~~ee~~<br>~~ee~~<br>||
||VCE(sat)(3)<br>~~ee~~<br>~~re~~|IC= 60 A, VGE= 15 V<br>(pulse test)<br>~~ee~~<br>~~re ~~|~~ee~~<br>~~ee~~<br> ~~ee~~|2.15<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.60<br>~~ee~~<br>~~ee~~||
||VCE(sat)(4)<br>~~re~~<br>~~ee~~<br>|IC= 60 A, VGE= 15 V,<br>Tc= 125<br> (pulse test)<br>~~re ~~<br>~~ee~~<br>|~~ee~~<br> <br>~~eee~~<br>|2.60<br>~~ee~~<br><br>~~eee~~<br>|~~eee~~<br>||
|Diode forward voltage<br>~~Pe ~~|VF(1)<br>~~ee~~<br>~~See~~<br>~~ee~~|IF= 30 A, VGE= 0 V<br>(pulse test)<br>~~ee~~<br>~~See~~<br>~~ee~~|~~eee~~<br>~~See~~<br>~~ee~~|1.75<br>~~eee~~<br>~~See~~<br>~~ee~~|2.40<br>~~eee~~<br>~~See~~<br>~~ee~~|V<br>~~See~~|
||VF(2)<br>~~ee~~<br> ~~See~~<br>~~ee~~|IF= 30 A, VGE= 0 V,<br>Tc= 125<br> (pulse test)<br>~~ee~~<br>~~See~~<br>~~ee~~|~~eee~~<br>~~See~~<br>~~ee~~|1.85<br>~~eee~~<br>~~See~~<br>~~ee~~|~~eee~~<br>~~See~~<br>~~ee~~||



©2021 Toshiba Electronic Devices & Storage Corporation 

2021-04-28 Rev.1.0 

3 

GT30N135SRA 

## ~~a~~ 6.2. Dynamic Characteristics (Ta = 25 

## , unless otherwise specified) 

**==> picture [461 x 250] intentionally omitted <==**

**----- Start of picture text -----**<br>
Characteristics Symbol Test Condition Min Typ. Max Unit<br>Input capacitance Cies VCE = 25 V, VGE = 0 V,  3700 pF<br>ee ee p- [| [| - |<br>f = 100 kHz<br>Reverse transfer capacitance Cres 40<br>ee p- | [- |<br>Output capacitance Coes 55<br>Total gate charge Qg VCE = 600 V, IC = 60 A,  270 nC<br>ee VGE = 15 V<br>Switching time (rise time) tr Resistive load P| 0.14 µs<br>ee ee ee ee ee<br>Switching time (turn-on time) ton VCE = 600 V, IC = 60 A,  0.21<br>ee VGE = +15 V, RG = 10 Ω [| - |<br>Switching time (fall time) tf See Fig. 6.2.1, 6.2.2 0.25 0.35<br>ee ee p- | [| - |<br>Switching time (turn-off time) toff 0.50<br>ee P- | |[| - |<br>Switching loss (turn-off switching loss) Eoff(1) Inductive load 0.80 mJ<br>VCE = 300 V, IC = 60 A,<br>VGE = +15 V, RG = 39 Ω<br>L = 30 µH, C = 0.33 µF<br>See Fig. 6.2.3, 6.2.4<br>Eoff(2) Inductive load 1.30<br>VCE = 300 V, IC = 60 A,<br>VGE = +15 V, RG = 39 Ω,<br>L = 30 µH, C = 0.33 µF<br>Tc = 125<br>See Fig. 6.2.3, 6.2.4<br>**----- End of picture text -----**<br>


Fig. 6.2.1 Test Circuit of Switching Time 

Fig. 6.2.2 Timing Chart of Switching Time 

Fig. 6.2.3 Test Circuit of Switching Loss 

Fig. 6.2.4 Timing Chart of Switching Loss 

©2021 Toshiba Electronic Devices & Storage Corporation 

2021-04-28 

4 

Rev.1.0 

GT30N135SRA 

## 7. Marking (Note) 

## Fig. 7.1 Marking 

Note: A line under a Lot No. identifies the indication of product Labels. 

[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] 

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. 

The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 

©2021 

2021-04-28 

5 

Toshiba Electronic Devices & Storage Corporation 

Rev.1.0 

GT30N135SRA 

## 8. Characteristics Curves (Note) 

Fig. 8.1 IC - VCE 

Fig. 8.3 IC - VCE 

**==> picture [100 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 8.5 VCE(sat) - Tc<br>**----- End of picture text -----**<br>


Fig. 8.2 IC - VCE 

**==> picture [82 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 8.4 IC - VCE<br>**----- End of picture text -----**<br>


**==> picture [83 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 8.6 IC - VGE<br>**----- End of picture text -----**<br>


©2021 Toshiba Electronic Devices & Storage Corporation 

2021-04-28 

6 

Rev.1.0 

GT30N135SRA 

**==> picture [86 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 8.7 VGE - Qg<br>**----- End of picture text -----**<br>


Fig. 8.9 rth(j-c) - tw (Guaranteed Maximum) 

Fig. 8.11 IF - VF 

Fig. 8.8 C -VCE 

Fig. 8.10 Safe Operating Area (Guaranteed Maximum) 

Fig. 8.12 VF - Tc 

©2021 Toshiba Electronic Devices & Storage Corporation 

2021-04-28 

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Rev.1.0 

GT30N135SRA 

Fig. 8.13 PC - Tc 

Fig. 8.14 Eoff - VCE 

Fig. 8.15 Eoff - IC 

Fig. 8.16 Eoff - RG 

Fig. 8.17 Eoff - Tc 

Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 

©2021 Toshiba Electronic Devices & Storage Corporation 

2021-04-28 

8 

Rev.1.0 

GT30N135SRA 

## Package Dimensions 

Unit: mm 

Weight: 6.15 g (typ.) 

|||Package Name(s)|
|---|---|---|
|TOSHIBA: 2-16L1A|TOSHIBA: 2-16L1A||
|Nickname: TO-247|Nickname: TO-247||



©2021 Toshiba Electronic Devices & Storage Corporation 

2021-04-28 

9 

Rev.1.0 

GT30N135SRA 

## RESTRICTIONS ON PRODUCT USE 

Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". Hardware, software and systems described in this document are collectively referred to as "Product". 

- TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. 

- This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. 

- Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. 

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- ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. 

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- Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. 

https://toshiba.semicon-storage.com/ 

©2021 Toshiba Electronic Devices & Storage Corporation 

2021-04-28 

10 

Rev.1.0 



## Links

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- [Supplier page](https://es.farnell.com/toshiba/gt30n135sra-s1e-s/transistor-igbt-1-35kv-60a-to/dp/3941898)
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