# SIC SCHOTTKY DIODE, 650V, 11A, TO-252
**URL**: https://novapart.co/products/GE04MPS06E-TR/sic-schottky-diode-650v-11a-to-252
**SKU**: GE04MPS06E-TR
**Manufacturer**: GENESIC
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €0.9660
**Stock**: 10+
**Lead Time**: 152 days (indicative)
## Description
Product Range:MPS Gen V Series; Diode Configuration:Single; Repetitive Peak Reverse Voltage:650V; Average Forward Current:11A; Total Capacitive Charge:10nC; Diod 14AM5520
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (17-Dec-2015) |
| No. Of Pins | 2 Pin |
| Product Range | MPS Gen V Series |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | TO-252 (DPAK) |
| Diode Configuration | Single |
| Average Forward Current | 11A |
| Total Capacitive Charge | 10nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:4603329/)
**GE04MPS06E TM 650V 4A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode VRRM = 650 V IF (TC = 162°C) = 4 A QC = 10 nC Features Package** • Revolutionary Low Built-In Voltage (VBI) **Case** • Gen5 Thin Chip Technology for Low VF • Superior Figure of Merit QC * VF • Enhanced Surge Current Robustness **RoHS** • Low Thermal Resistance • Zero Reverse Recovery • 100% Avalanche (UIL) Tested • Excellent dV/dt Ruggedness **TO-252-2 K A REACH Advantages Applications**
- Low Conduction Losses for All Load Conditions • Optimal Price Performance
- Switched Mode Power Supply (SMPS) • Solar Inverter
• Increased System Power Density • Server and Telecom Power Supply • High System Reliability • Battery Charger • Reduced Cooling Requirements • Uninterruptible Power Supply (UPS) • Temperature Independent Fast Switching • Easy to Parallel without Thermal Runaway **Absolute Maximum Ratings** (At TC = 25°C Unless Otherwise Stated) **Parameter Symbol Conditions Values Unit Note** Repetitive Peak Reverse Voltage VRRM 650 V TC = 100°C, D = 1 11 Continuous Forward Current I F TC = 135°C, D = 1 8 A Fig. 4 TC = 162°C, D = 1 4 Non-Repetitive Peak Forward Surge Current, Half Sine TC = 25°C, tP = 10 ms 28 Wave IF,SM TC = 150°C, tP = 10 ms 22 A TC = 25°C, tP = 10 ms 16 Repetitive Peak Forward Surge Current, Half Sine Wave IF,RM A TC = 150°C, tP = 10 ms 11 Non-Repetitive Peak Forward Surge Current IF,MAX TC = 25°C, tP = 10 µs 140 A i2t Value ∫i2dt TC = 25°C, tP = 10 ms 3.92 A s 2 Non-Repetitive Avalanche Energy EAS L = 6.5 mH, IAS = 4 A 53 mJ Diode Ruggedness dV/dt VR = 0 ~ 520 V 200 V/ns Power Dissipation PTOT TC = 25°C 82 W Fig. 3 Operating and Storage Temperature T , Tj stg -55 to 175 °C
**Rev 21/Jun Latest Version at: www.genesicsemi.com/sic-schottky-mps/GE04MPS06E/GE04MPS06E.pdf Page 1 of 7**
**GE04MPS06E 650V 4A SiC Schottky MPS™ Diode**
**TM**
## **Electrical Characteristics**
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Values
Parameter Symbol Conditions Unit Note
Min. Typ. Max.
I = 4 A, T = 25°C F j 1.25 1.4
Diode Forward Voltage V F V Fig. 1
I = 4 A, T = 175°C F j 1.75
VR = 650 V, T = 25°C j 1 10
Reverse Current IR µA Fig. 2
VR = 650 V, T = 175°C j 78
VR = 200 V 7
Total Capacitive Charge QC nC Fig. 7
I ≤ IF F,MAX VR = 400 V 10
dI /dt = 200 A/µs F VR = 200 V
Switching Time tS < 10 ns
VR = 400 V
VR = 1 V, f = 1MHz 186
Total Capacitance C pF Fig. 6
VR = 400 V, f = 1MHz 13
Thermal/Package Characteristics
Values
Parameter Symbol Conditions Unit Note
Min. Typ. Max.
Thermal Resistance, Junction - Case RthJC 1.84 °C/W Fig. 9
Weight WT 0.3 g
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**Latest Version at: www.genesicsemi.com/sic-schottky-mps/GE04MPS06E/GE04MPS06E.pdf**
**Page 2 of 7**
**Rev 21/Jun**
**GE04MPS06E 650V 4A SiC Schottky MPS™ Diode**
**TM**
**Figure 1: Typical Forward Characteristics**
IF = f(VF,T); tj P = 250 µs
**Figure 3: Power Derating Curves**
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PTOT = f(TC); T = 175°C j
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**Figure 2: Typical Reverse Characteristics**
IR = f(VR,T)j
**Figure 4: Current Derating Curves (Typical VF)**
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IF = f(TC); D = tP/T; T ≤ 175°C; fj SW > 10kHz
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**Latest Version at: www.genesicsemi.com/sic-schottky-mps/GE04MPS06E/GE04MPS06E.pdf**
**Page 3 of 7**
**Rev 21/Jun**
**GE04MPS06E 650V 4A SiC Schottky MPS™ Diode**
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TM
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Figure 5: Current Derating Curves (Maximum VF)
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IF = f(TC); D = tP/T; T ≤ 175°C; fj SW > 10kHz
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**Figure 7: Typical Capacitive Charge vs Reverse Voltage Characteristics**
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QC = f(VR); f = 1MHz
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**Figure 6: Typical Junction Capacitance vs Reverse Voltage Characteristics**
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C = f(VR); f = 1MHz
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**Figure 8: Typical Capacitive Energy vs Reverse Voltage Characteristics**
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EC = f(VR); f = 1MHz
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**Latest Version at: www.genesicsemi.com/sic-schottky-mps/GE04MPS06E/GE04MPS06E.pdf**
**Page 4 of 7**
**Rev 21/Jun**
**GE04MPS06E 650V 4A SiC Schottky MPS™ Diode**
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TM
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**Figure 9: Transient Thermal Impedance**
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Zth,jc = f(tP,D); D = tP/T
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**Figure 10: Forward Curve Model**
## **Forward Curve Model Equation:**
IF = (VF - VBI)/RDIFF (A) eel **Built-In Voltage (VBI):** VBI(T) = j m × T + j n (V) m = -0.00124 (V/°C) n = 0.72 (V)
**Differential Resistance (RDIFF):**
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1/RDIFF
ann enn
VBI
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- RDIFF(T) = j a × Tj[2] + b × T + j c (Ω) a = 2.41e-06 (Ω/°C2) b = 0.000681 (Ω/°C) c = 0.12 (Ω)
**Forward Power Loss Equation:**
PLOSS = VBI(T) × Ij AVG + RDIFF(T) × Ij RMS[2]
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IF = f(VF,T)j
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**Latest Version at: www.genesicsemi.com/sic-schottky-mps/GE04MPS06E/GE04MPS06E.pdf**
**Page 5 of 7**
**Rev 21/Jun**
**GE04MPS06E 650V 4A SiC Schottky MPS™ Diode**
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TM
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## **Package Dimensions**
## **TO-252-2 Package Outline**
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0.265 (6.73)
0.094 (2.38)
0.252 (6.40)
0.087 (2.20)
0.173 (4.40)
0.215 (5.46) 0.050 (1.27) min
0.035 (0.89)
0.205 (5.21) 0.023 (0.58)
JL
0.018 (0.46)
ae
SEATING
0.409 (10.40) PLANE 0.205 (5.21)min
0.245 (6.22) 0.370 (9.40)
0.236 (6.00)
0.005 (0.127) max
—
0.1080 REF
0.070 (1.77)
(2.743 REF)
0.045 (1.14) 0.055 (1.40)
0.023 (0.58)
0.030 (0.77) - iT | (24.
0.035 (0.88) 0.018 (0.46)
0.090 BSC 0.025 (0.64) 0.020 BSC
(2.286 BSC)
(0.508 BSC)
0.180 BSC
(4.572 BSC)
ani “TE 4 fr
eee aoe Recommended Solder Pad Layout Package View
0.236 (6.00)
Case (K) Case (K)
0.256 (6.50)
0.246 (6.25)
~~ a
0.118 (3.00 )
A
0.055 (1.40) 0.055 (1.40) K
0.090 (2.29) 0.090 (2.29)
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## **NOTE**
1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS.
**Latest Version at: www.genesicsemi.com/sic-schottky-mps/GE04MPS06E/GE04MPS06E.pdf**
**Page 6 of 7**
**Rev 21/Jun**
**GE04MPS06E 650V 4A SiC Schottky MPS™ Diode**
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TM
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## **Compliance**
## **RoHS Compliance**
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS 2), as adopted by EU member states on January 2, 2013 and amended on March 31, 2015 by EU Directive 2015/863. RoHS Declarations for this product can be obtained from your GeneSiC representative.
## **REACH Compliance**
REACH substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a GeneSiC representative to insure you get the most up-to-date REACH SVHC Declaration. REACH banned substance information (REACH Article 67) is also available upon request.
## **Disclaimer**
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage.
## **Related Links**
- SPICE Models: https://www.genesicsemi.com/sic-schottky-mps/GE04MPS06E/GE04MPS06E_SPICE.zip
- PLECS Models: https://www.genesicsemi.com/sic-schottky-mps/GE04MPS06E/GE04MPS06E_PLECS.zip
- CAD Models: https://www.genesicsemi.com/sic-schottky-mps/GE04MPS06E/GE04MPS06E_3D.zip
- Evaluation Boards: https://www.genesicsemi.com/technical-support
- Reliability: https://www.genesicsemi.com/reliability
- Compliance: https://www.genesicsemi.com/compliance
- Quality Manual: https://www.genesicsemi.com/quality
## **Revision History**
- Rev 21/Jun: Updated with most recent test data
- Supersedes: Rev 20/Jul
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## **www.genesicsemi.com/sic-schottky-mps/**
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**Rev 21/Jun Copyright© 2021 GeneSiC Semiconductor Inc. All Rights Reserved.**
**Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155, Dulles, VA 20166; USA Page 7 of 7**
## Links
- [View this product on Novapart](https://novapart.co/products/GE04MPS06E-TR/sic-schottky-diode-650v-11a-to-252)
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- [Supplier page](https://es.farnell.com/genesic-semiconductor/ge04mps06e-tr/sic-schottky-diode-650v-11a-to/dp/4603329)
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