# IGBT Module, Dual Common Emitter Common Gate, 800 A, 2.3 V, 5.75 kW, 150 °C
**URL**: https://novapart.co/products/GD800SGX170C3S/igbt-module-dual-common-emitter-gate-800-a-23-v
**SKU**: GD800SGX170C3S
**Manufacturer**: STARPOWER
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €234.6000
**Stock**: 10+
**Lead Time**: 162 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| Product Range | - |
| Igbt Technology | Trench Field Stop |
| Igbt Termination | Tab |
| Power Dissipation | 5.75kW |
| Igbt Configuration | Dual Common Emitter Common Gate |
| Transistor Mounting | Panel |
| Transistor Case Style | - |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 800A |
| Collector Emitter Voltage Max | 1.7kV |
| Collector Emitter Saturation Voltage | 2.3V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3912081/)
GD800SGX170C3S IGBT Module
## **STARPOWER**
##
## **IGBT**
## **GD800SGX170C3S**
## **1700V/800A 1 in one-package**
## **General Description**
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS.
## **Features**
- Low VCE(sat) Trench IGBT technology
- 10μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
## **Typical Applications**
- AC inverter drives
- Switching mode power supplies
- Electronic welders
## **Equivalent Circuit Schematic**
**==> picture [83 x 35] intentionally omitted <==**
**==> picture [129 x 44] intentionally omitted <==**
©2021 STARPOWER Semiconductor Ltd. 6/1/2021 1/9 B01
GD800SGX170C3S IGBT Module
## **Absolute Maximum Ratings** TC=25[o] C unless otherwise noted
## **IGBT**
|**IGBT**||||
|---|---|---|---|
|**Symbol **|**Description **|**Value**|**Unit**|
|VCES|Collector-EmitterVoltage|1700|V|
|VGES|Gate-Emitter Voltage|±20|V|
|IC|CollectorCurrent|800|A|
|ICM|Pulsed Collector Current tp=1ms|1600|A|
|PD|Maximum Power Dissipation@Tj=175oC|5.75|kW|
|**Diode**||||
|**Symbol**|**Description**|**Value**|**Unit**|
|VRRM|Repetitive Peak Reverse Voltage|1700|V|
|IF|Diode ContinuousForward Current|800|A|
|IFM|Diode Maximum Forward Current tp=1ms|1600|A|
## **Module**
|**Module**||||
|---|---|---|---|
|**Symbol**|**Description**|**Value**|**Unit**|
|Tjmax|MaximumJunction Temperature|175|oC|
|Tjop|OperatingJunction Temperature|-40 to +150|oC|
|TSTG|StorageTemperatureRange|-40to+125|oC|
|VISO|IsolationVoltageRMS,f=50Hz,t=1min|4000|V|
©2021 STARPOWER Semiconductor Ltd. 6/1/2021 2/9 B01
GD800SGX170C3S IGBT Module
**IGBT Characteristics** TC=25[o] C unless otherwise noted
|**IGBT**|**Characteristics**TC|=25oC unless otherwise n|oted||||
|---|---|---|---|---|---|---|
|**Symbol **|**Parameter **|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|VCE(sat)|Collector to Emitter
Saturation Voltage|IC=800A,VGE=15V,
Tj=25oC||1.85|2.30|V|
|||IC=800A,VGE=15V,
Tj=125oC||2.25|||
|||IC=800A,VGE=15V,
Tj=150oC||2.35|||
|VGE(th)|Gate-Emitter Threshold
Voltage|IC=32.0mA,VCE=VGE,
Tj=25oC|5.6|6.2|6.8|V|
|ICES|Collector Cut-Off
Current|VCE=VCES,VGE=0V,
Tj=25oC|||1.0|mA|
|IGES|Gate-Emitter Leakage
Current|VGE=VGES,VCE=0V,
Tj=25oC|||400|nA|
|RGint|InternalGateResistance|||1.1||Ω|
|Cies|Input Capacitance|VCE=25V,f=1MHz,
VGE=0V||96.3||nF|
|Cres|Reverse Transfer
Capacitance|||2.34||nF|
|QG|Gate Charge|VGE=-15…+15V||7.54||μC|
|td(on)|Turn-On DelayTime|VCC=900V,IC=800A,
RG=2.4Ω,
VGE=-9/+15V,
LS=65nH, Tj=25oC||457||ns|
|tr|RiseTime|||104||ns|
|td(off)|Turn-Off DelayTime|||1250||ns|
|tf|Fall Time|||66||ns|
|Eon|Turn-On Switching
Loss|||265||mJ|
|Eoff|Turn-Off Switching
Loss|||124||mJ|
|td(on)|Turn-On DelayTime|VCC=900V,IC=800A,
RG=2.4Ω,
VGE=-9/+15V,
LS=65nH, Tj=125oC||502||ns|
|tr|Rise Time|||133||ns|
|td(off)|Turn-Off DelayTime|||1404||ns|
|tf|Fall Time|||113||ns|
|Eon|Turn-On Switching
Loss|||385||mJ|
|Eoff|Turn-Off Switching
Loss|||157||mJ|
|td(on)|Turn-On DelayTime|VCC=900V,IC=800A,
RG=2.4Ω,
VGE=-9/+15V,
LS=65nH, Tj=150oC||515||ns|
|tr|Rise Time|||141||ns|
|td(off)|Turn-Off DelayTime|||1446||ns|
|tf|Fall Time|||116||ns|
|Eon|Turn-On Switching
Loss|||421||mJ|
|Eoff|Turn-Off Switching
Loss|||169||mJ|
|ISC|SC Data|tP≤10μs,VGE=15V,
Tj=150oC,VCC=1000V,
VCEM≤1700V||3200||A|
©2021 STARPOWER Semiconductor Ltd. 6/1/2021 3/9 B01
## **Diode Characteristics** TC=25[o] C unless otherwise noted
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VF|Diode Forward
Voltage|IF=800A,VGE=0V,Tj=25oC||1.80|2.25|V|
|||IF=800A,VGE=0V,Tj=125oC||1.90|||
|||IF=800A,VGE=0V,Tj=150oC||1.95|||
|Qr|Recovered Charge|VCC=900V,IF=800A,
-di/dt=6150A/μs,VGE=-9V,
LS=65nH, Tj=25oC||107||μC|
|IRM|Peak Reverse
RecoveryCurrent|||717||A|
|Erec|Reverse Recovery
Energy|||189||mJ|
|Qr|Recovered Charge|VCC=900V,IF=800A,
-di/dt=6150A/μs,VGE=-9V,
LS=65nH, Tj=125oC||225||μC|
|IRM|Peak Reverse
Recovery Current|||734||A|
|Erec|Reverse Recovery
Energy|||312||mJ|
|Qr|Recovered Charge|VCC=900V,IF=800A,
-di/dt=6150A/μs,VGE=-9V,
LS=65nH, Tj=150oC||256||μC|
|IRM|Peak Reverse
Recovery Current|||737||A|
|Erec|Reverse Recovery
Energy|||343||mJ|
**Module Characteristics** TC=25[o] C unless otherwise noted
|**Symbol **|**Parameter **|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|
|LCE|StrayInductance||12||nH|
|RCC’+EE’|Module Lead Resistance,Terminal to Chip||0.19||mΩ|
|RthJC|Junction-to-Case (per IGBT)
Junction-to-Case(per Diode)|||26.1
40.3|K/kW|
|RthCH|Case-to-Heatsink (per IGBT)
Case-to-Heatsink (per Diode)
Case-to-Heatsink(per Module)||9.9
15.3
6.0||K/kW|
|M|Power Terminal Screw:M4
Power Terminal Screw:M8
MountingScrew:M6|1.8
8.0
4.25||2.1
10.0
5.75|N.m|
|G|Weightof Module||1500||g|
©2021 STARPOWER Semiconductor Ltd. 6/1/2021 4/9 B01
GD800SGX170C3S IGBT Module
**==> picture [513 x 657] intentionally omitted <==**
**----- Start of picture text -----**
1600 1600
1400 VGE=15V 1400
VCE=20V
1200 1200
1000 1000
800 800
600 600
400 400
Tj=25℃
Tj=25℃
200 Tj=125℃ 200
Tj=125℃
Tj=150℃ Tj=150℃
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 4 5 6 7 8 9 10 11 12 13
VCE [V] VGE [V]
Fig 1. IGBT Output Characteristics Fig 2. IGBT Transfer Characteristics
1200 2000
Eon Tj=125℃ Eon Tj=125℃
Eoff Tj=125℃ Eoff Tj=125℃
Eon Tj=150℃ Eon Tj=150℃
1600
Eoff Tj=150℃ Eoff Tj=150℃
900
VCC=900V
RG=2.4Ω 1200
VGE=-9/+15V
600
800
VCC=900V
IC=800A
300
VGE=-9/+15V
400
0 0
0 400 800 1200 1600 0 3 6 9 12 15 18 21 24
IC [A] RG [Ω]
[A] [A]
C C
I I
E [mJ] E [mJ]
**----- End of picture text -----**
Fig 3. IGBT Switching Loss vs. IC Fig 4. IGBT Switching Loss vs. RG
©2021 STARPOWER Semiconductor Ltd. 6/1/2021 5/9 B01
GD800SGX170C3S IGBT Module
**==> picture [513 x 712] intentionally omitted <==**
**----- Start of picture text -----**
2000 100
Module
IGBT
1600
10
1200
800
1
400 RG=2.4Ω i: 1 2 3 4
VT GE=150=-9/+15V [o] C rτii[K/kW]: 9.1350 9.1350 5.2200 2.6100 [s]: 0.0200 0.0600 0.1000 0.3000
j
0 0.1
0 200 400 600 800 1000 0.001 0.01 0.1 1 10
VCE [V] t [s]
Fig 5. RBSOA Fig 6. IGBT Transient Thermal Impedance
1600 700
Tj=25℃
Erec Tj=125℃
Tj=125℃
1400
Tj=150℃ 600 Erec Tj=150℃
1200
500
1000
400
800
300
600
200
400 VCC=900V
RG=2.4Ω
200 100 VGE=-9V
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 400 800 1200 1600
VF [V] IF [A]
Fig 7. Diode Forward Characteristics Fig 8. Diode Switching Loss vs. IF
©2021 STARPOWER Semiconductor Ltd. 6/1/2021 6/9 B01
[A]
C [K/kW]
I thJC
Z
[A]
F
I E [mJ]
**----- End of picture text -----**
GD800SGX170C3S IGBT Module
**==> picture [513 x 314] intentionally omitted <==**
**----- Start of picture text -----**
500 100
Erec Tj=125℃
Diode
Erec Tj=150℃
400
300
10
200
100 VCC=900V i: 1 2 3 4
ri[K/kW]: 14.1050 14.1050 8.0600 4.0300
IF=800A τi[s]: 0.0200 0.0060 0.1000 0.3000
VGE=-9V
0 1
0 3 6 9 12 15 18 21 24 0.001 0.01 0.1 1 10
RG [Ω] t [s]
[K/kW]
E [mJ]
thJC
Z
**----- End of picture text -----**
Fig 9. Diode Switching Loss vs. RG Fig 10. Diode Transient Thermal Impedance
©2021 STARPOWER Semiconductor Ltd. 6/1/2021 7/9 B01
GD800SGX170C3S IGBT Module
## **Circuit Schematic**
## **Package Dimensions**
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Dimensions in Millimeters
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for M4
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©2021 STARPOWER Semiconductor Ltd. 6/1/2021 8/9 B01
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GD800SGX170C3S IGBT Module
## **Terms and Conditions of Usage**
The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application.
This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics.
Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify.
If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved.
©2021 STARPOWER Semiconductor Ltd. 6/1/2021 9/9 B01
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- [Supplier page](https://es.farnell.com/starpower/gd800gx170c3s/igbt-module/dp/3912081)
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