# IGBT Module, Half Bridge, 100 A, 2.8 V, 484 W, 125 °C, Module

![Product image](https://novapart.co/image/farnell:4312704/)

**URL**: https://novapart.co/products/GD75HFU120C1SD/igbt-module-half-bridge-100-a-28-v-484-w-125-c
**SKU**: GD75HFU120C1SD
**Manufacturer**: STARPOWER
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €26.1500
**Stock**: 10+
**Lead Time**: 162 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| Product Range | - |
| Igbt Technology | NPT Ultra Fast IGBT |
| Igbt Termination | Screw |
| Power Dissipation | 484W |
| Igbt Configuration | Half Bridge |
| Transistor Mounting | Panel |
| Transistor Case Style | Module |
| Operating Temperature Max | 125°C |
| Continuous Collector Current | 100A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 2.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4312704/)

GD75HFU120C1SD                                                              IGBT Module 

## **STARPOWER** 

## **SEMICONDUCTOR                                              IGBT** 

## **GD75HFU120C1SD** 

## **1200V/75A 2 in one-package** 

## **General Description** 

STARPOWER IGBT Power Module provides ultra switching speed as well as short circuit ruggedness. They are designed for the applications such as electronic welder and inductive heating. 

## **Features** 

- NPT IGBT technology 

- 10μs short circuit capability 

- Low switching losses 

- VCE(sat) with positive temperature coefficient 

- Low inductance case 

- Fast & soft reverse recovery anti-parallel FWD 

- Isolated copper baseplate using DBC technology 

## **Typical Applications** 

- Switching mode power supply 

- Inductive heating 

- Electronic welder 

## **Equivalent Circuit Schematic** 

©2023 STARPOWER Semiconductor Ltd.          1/30/2023           1/9        preliminary 

GD75HFU120C1SD                                                              IGBT Module 

## **Absolute Maximum Ratings** TC=25[o] C unless otherwise noted 

## **IGBT** 

|**IGBT**||||
|---|---|---|---|
|**Symbol **|**Description **|**Value**|**Unit**|
|VCES|Collector-EmitterVoltage|1200|V|
|VGES|Gate-Emitter Voltage|±20|V|
|IC|Collector Current  @ TC=25oC<br>@TC=65oC|100<br>75|A|
|ICM|Pulsed CollectorCurrent  tp=1ms|150|A|
|PD|Maximum Power Dissipation@Tvj=150oC|484|W|
|**Diode**||||
|**Symbol **|**Description **|**Value**|**Unit**|
|VRRM|RepetitivePeak Reverse Voltage|1200|V|
|IF|Diode Continuous Forward Current|75|A|
|IFM|DiodeMaximum Forward Current  tp=1ms|150|A|
|**Module**||||
|**Symbol**|**Description**|**Value**|**Unit**|
|Tvjmax|Maximum Junction Temperature|150|oC|
|Tvjop|Operating Junction Temperature|-40to+125|oC|
|TSTG|Storage Temperature Range|-40 to +125|oC|
|VISO|Isolation Voltage  RMS,f=50Hz,t=1min|2500|V|



©2023 STARPOWER Semiconductor Ltd.          1/30/2023           2/9        preliminary 

**IGBT Characteristics** TC=25[o] C unless otherwise noted 

|**IGBT**|**Characteristics**TC|=25oC unless otherwise n|oted||||
|---|---|---|---|---|---|---|
|**Symbol **|**Parameter **|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|VCE(sat)|Collector to Emitter<br>Saturation Voltage|IC=75A,VGE=15V,<br>Tvj=25oC||2.80|3.25|V|
|||IC=75A,VGE=15V,<br>Tvj=125oC||3.65|||
|VGE(th)|Gate-Emitter Threshold<br>Voltage|IC=3.0mA,VCE=VGE,<br>Tvj=25oC|4.7|5.7|6.7|V|
|ICES|Collector Cut-Off<br>Current|VCE=VCES,VGE=0V,<br>Tvj=25oC|||5.0|mA|
|IGES|Gate-Emitter Leakage<br>Current|VGE=VGES,VCE=0V,<br>Tvj=25oC|||400|nA|
|RGint|InternalGateResistance|||2.50||Ω|
|Cies|Input Capacitance|VCE=25V,f=1MHz,<br>VGE=0V||5.07||nF|
|Cres|Reverse Transfer<br>Capacitance|||0.31||nF|
|QG|Gate Charge|VGE=-15…+15V||0.81||μC|
|td(on)|Turn-On DelayTime|VCC=600V,IC=75A,<br>RG=7.5Ω,VGE=±15V,<br>Tvj=25oC||63||ns|
|tr|RiseTime|||37||ns|
|td(off)|Turn-Off DelayTime|||278||ns|
|tf|Fall Time|||156||ns|
|Eon|Turn-On Switching<br>Loss|||6.43||mJ|
|Eoff|Turn-Off Switching<br>Loss|||3.36||mJ|
|td(on)|Turn-On DelayTime|VCC=600V,IC=75A,<br>RG=7.5Ω,VGE=±15V,<br>Tvj=125oC||67||ns|
|tr|Rise Time|||39||ns|
|td(off)|Turn-Off DelayTime|||297||ns|
|tf|Fall Time|||232||ns|
|Eon|Turn-On Switching<br>Loss|||8.10||mJ|
|Eoff|Turn-Off Switching<br>Loss|||4.77||mJ|
|ISC|SC Data|tP≤10μs,VGE=15V,<br>Tvj=125oC,VCC=800V,<br>VCEM≤1200V||450||A|



©2023 STARPOWER Semiconductor Ltd.          1/30/2023           3/9        preliminary 

GD75HFU120C1SD                                                              IGBT Module 

**Diode Characteristics** TC=25[o] C unless otherwise noted 

|**Symbol **|**Parameter **|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VF|Diode Forward<br>Voltage|IF=75A,VGE=0V,Tvj=25oC||1.85|2.30|V|
|||IF=75A,VGE=0V,Tvj=125oC||1.90|||
|Qr|Recovered Charge|VR=600V,IF=75A,<br>-di/dt=1450A/μs,VGE=-15V<br>Tvj=25oC||10.2||μC|
|IRM|Peak Reverse<br>Recovery Current|||46||A|
|Erec|Reverse Recovery<br>Energy|||3.24||mJ|
|Qr|Recovered Charge|VR=600V,IF=75A,<br>-di/dt=1470A/μs,VGE=-15V<br>Tvj=125oC||11.6||μC|
|IRM|Peak Reverse<br>RecoveryCurrent|||73||A|
|Erec|Reverse Recovery<br>Energy|||4.05||mJ|



**Module Characteristics** TC=25[o] C unless otherwise noted 

|**Symbol**|**Parameter**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|
|LCE|StrayInductance||30||nH|
|RCC’+EE’|Module Lead Resistance,Terminal to Chip||0.65||mΩ|
|RthJC|Junction-to-Case (per IGBT)<br>Junction-to-Case(per Diode)|||0.258<br>0.527|K/W|
|RthCH|Case-to-Heatsink (per IGBT)<br>Case-to-Heatsink (per Diode)<br>Case-to-Heatsink(per Module)||0.149<br>0.304<br>0.050||K/W|
|M|Terminal Connection Torque, Screw M5<br>MountingTorque, ScrewM6|2.5<br>3.0||5.0<br>5.0|N.m|
|G|Weight of Module||150||g|



©2023 STARPOWER Semiconductor Ltd.          1/30/2023           4/9        preliminary 

GD75HFU120C1SD                                                              IGBT Module 

**==> picture [513 x 715] intentionally omitted <==**

**----- Start of picture text -----**<br>
150 150<br>VGE=15V<br>125 125 VCE=20V<br>100 100<br>75 75<br>50 50 Tvj=25℃<br>Tvj=125℃<br>25 Tvj=25℃ 25<br>Tvj=125℃<br>0 0<br>0 1 2 3 4 5 6 5 6 7 8 9 10 11<br>VCE  [V]  VGE [V]<br>Fig 1. IGBT Output Characteristics                          Fig 2. IGBT Transfer Characteristics<br>25 35<br>Eon Tvj=125℃ Eon Tvj=125℃<br>Eoff Tvj=125℃ 30 Eoff Tvj=125℃<br>20<br>VRGCC=7.5Ω =600V  25 VCC=600V<br>VGE=±15V  IC=75A<br>15 20 VGE=±15V<br>15<br>10<br>10<br>5<br>5<br>0 0<br>0 25 50 75 100 125 150 0 15 30 45 60 75<br>IC [A]  RG [Ω]<br>Fig 3. IGBT Switching Loss vs. IC                              Fig 4. IGBT Switching Loss vs. RG<br>©2023 STARPOWER Semiconductor Ltd.          1/30/2023           5/9        preliminary<br> [A]   [A]<br>C C<br>I I<br>E [mJ]  E [mJ]<br>**----- End of picture text -----**<br>


GD75HFU120C1SD                                                              IGBT Module 

**==> picture [513 x 680] intentionally omitted <==**

**----- Start of picture text -----**<br>
200 1<br>Module  IGBT<br>150<br>0.1<br>100<br>0.01<br>50<br>RG=7.5Ω<br>VGE=±15V  i:                1            2            3            4<br>ri[K/W]:   0.0152   0.0848   0.0829   0.0752<br>Tvj=125 [o] C  τi[s]:          0.01       0.02       0.05       0.1<br>0 0.001<br>0 350 700 1050 1400 0.001 0.01 0.1 1 10<br>VCE [V]  t [s]<br>Fig 5. RBSOA                                       Fig 6. IGBT Transient Thermal Impedance<br>150 6<br>Tvj=25℃ Erec Tvj=125℃<br>125 Tvj=125℃ 5<br>100 4<br>75 3<br>50 2<br>VR=600V<br>25 1 RG=7.5Ω<br>VGE=-15V<br>0 0<br>0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 150<br>VF  [V]  IF [A]<br>Fig 7. Diode Forward Characteristics    Fig 8. Diode Switching Loss vs. IF<br> [A]   [K/W]<br>C<br>I<br>thJC<br>Z<br> [A]<br>F<br>I E [mJ]<br>**----- End of picture text -----**<br>


**==> picture [418 x 12] intentionally omitted <==**

**----- Start of picture text -----**<br>
©2023 STARPOWER Semiconductor Ltd.          1/30/2023           6/9        preliminary<br>**----- End of picture text -----**<br>


GD75HFU120C1SD                                                              IGBT Module 

**==> picture [513 x 314] intentionally omitted <==**

**----- Start of picture text -----**<br>
5 1<br>Erec Tvj=125℃ Diode<br>4<br>3<br>0.1<br>2<br>VR=600V<br>IF=75A<br>1<br>VGE=-15V<br>i:                1            2            3            4<br>ri[K/W]:   0.0320   0.1737   0.1684   0.1530<br>τi[s]:          0.01       0.02       0.05       0.1<br>0 0.01<br>0 15 30 45 60 75 0.001 0.01 0.1 1 10<br>RG [Ω]  t [s]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


Fig 9. Diode Switching Loss vs. RG                      Fig 10. Diode Transient Thermal Impedance 

©2023 STARPOWER Semiconductor Ltd.          1/30/2023           7/9        preliminary 

GD75HFU120C1SD                                                              IGBT Module 

## **Circuit Schematic** 

## **Package Dimensions** 

**==> picture [193 x 9] intentionally omitted <==**

©2023 STARPOWER Semiconductor Ltd.          1/30/2023           8/9        preliminary 

GD75HFU120C1SD                                                              IGBT Module 

## **Terms and Conditions of Usage** 

The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. 

This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. 

Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. 

Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. 

Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. 

If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. 

©2023 STARPOWER Semiconductor Ltd.          1/30/2023           9/9        preliminary 



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- [Supplier page](https://es.farnell.com/starpower/gd75hfu120c1sd/igbt-module-half-bridge-1-2kv/dp/4312704)
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