# IGBT Module, Single, 830 A, 2.9 V, 4.032 kW, 125 °C, Module

![Product image](https://novapart.co/image/farnell:3549268/)

**URL**: https://novapart.co/products/GD600SGU120C2S/igbt-module-single-830-a-29-v-4032-kw-125-c
**SKU**: GD600SGU120C2S
**Manufacturer**: STARPOWER
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €97.1200
**Stock**: 10+
**Lead Time**: 162 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| Product Range | - |
| Igbt Technology | NPT Ultra Fast IGBT |
| Igbt Termination | Stud |
| Power Dissipation | 4.032kW |
| Igbt Configuration | Single |
| Transistor Mounting | Panel |
| Dc Collector Current | 830A |
| Power Dissipation Pd | 4.032kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 125°C |
| Junction Temperature Tj Max | 125°C |
| Continuous Collector Current | 830A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 2.9V |
| Collector Emitter Saturation Voltage Vce(On) | 2.9V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3549268/)

GD600SGU120C2S                                                               IGBT Module 

## **STARPOWER** 

**SEMICONDUCTOR                                              IGBT** 

## **GD600SGU120C2S** 

**1200V/600A 1 in one-package** 

## **General Description** 

STARPOWER IGBT Power Module provides ultrafast switching speed as well as short circuit ruggedness. It’s designed for the applications such as electronic welder and inductive heating. 

## **Features** 

- NPT IGBT technology 

- 10μs short circuit capability 

- Low switching losses 

- Rugged with ultrafast performance 

- VCE(sat) with positive temperature coefficient 

- Fast & soft reverse recovery anti-parallel FWD 

- Isolated copper baseplate using DBC technology 

## **Typical Applications** 

- Switching mode power supply 

- Inductive heating 

- Electronic welder 

## **Equivalent Circuit Schematic** 

**==> picture [131 x 140] intentionally omitted <==**

**----- Start of picture text -----**<br>
a<br>**----- End of picture text -----**<br>


©2014 STARPOWER Semiconductor Ltd.         10/8/2014        1/6          Preliminary 

GD600SGU120C2S                                                               IGBT Module 

## **Absolute Maximum Ratings** TC=25[o] C unless otherwise noted 

## **IGBT** 

|**IGBT**||||
|---|---|---|---|
|**Symbol**|**Description**|**Value**|**Unit**|
|VCES|Collector-EmitterVoltage|1200|V|
|VGES|Gate-Emitter Voltage|±20|V|
|IC|Collector Current  @ TC=25~~o~~C<br>@TC=70oC|830<br>600|A|
|ICM|Pulsed CollectorCurrent  tp=1ms|1200|A|
|PD|Maximum Power Dissipation@Tj=150~~o~~C|4032|W|
|**Diode**||||
|**Symbol**|**Description**|**Value**|**Unit**|
|VRRM|RepetitivePeak Reverse Voltage|1200|V|
|IF|Diode Continuous Forward Current|600|A|
|IFM|DiodeMaximum Forward Current  tp=1ms|1200|A|



## **Module** 

|**Module**||||
|---|---|---|---|
|**Symbol**|**Description**|**Value**|**Unit**|
|Tjmax|Maximum Junction Temperature|150|~~o~~C|
|Tjop|Operating Junction Temperature|-40to+125|~~o~~C|
|TSTG|Storage Temperature Range|-40 to +125|~~o~~C|
|VISO|Isolation Voltage  RMS,f=50Hz,t=1min|2500|V|



©2014 STARPOWER Semiconductor Ltd.         10/8/2014        2/6          Preliminary 

**IGBT Characteristics** TC=25[o] C unless otherwise noted 

|**IGBT**|**Characteristics**TC|=25oC unless otherwise n|oted||||
|---|---|---|---|---|---|---|
|**Symbol **|**Parameter **|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|VCE(sat)|Collector to Emitter<br>Saturation Voltage|IC=600A,VGE=15V,<br>Tj=25oC||2.90|3.35|V|
|||IC=600A,VGE=15V,<br>Tj=125oC||3.60|||
|VGE(th)|Gate-Emitter Threshold<br>Voltage|IC=6.0mA,VCE=VGE,<br>Tj=25oC|5.0|5.8|6.6|V|
|ICES|Collector Cut-Off<br>Current|VCE=VCES,VGE=0V,<br>Tj=25oC|||5.0|mA|
|IGES|Gate-Emitter Leakage<br>Current|VGE=VGES,VCE=0V,<br>Tj=25oC|||400|nA|
|RGint|InternalGateResistance|||0.25||Ω|
|Cies|Input Capacitance|VCE=25V,f=1MHz,<br>VGE=0V||39.0||nF|
|Cres|Reverse Transfer<br>Capacitance|||2.55||nF|
|QG|Gate Charge|VGE=-15…+15V||6.30||μC|
|td(on)|Turn-On DelayTime|VCC=600V,IC=600A,<br>RG=1.1Ω,VGE=±15V,<br>Tj=25oC||205||ns|
|tr|RiseTime|||50||ns|
|td(off)|Turn-Off DelayTime|||265||ns|
|tf|Fall Time|||140||ns|
|Eon|Turn-On Switching<br>Loss|||50.4||mJ|
|Eoff|Turn-Off Switching<br>Loss|||20.0||mJ|
|td(on)|Turn-On DelayTime|VCC=600V,IC=600A,<br>RG=1.1Ω,VGE=±15V,<br>Tj=125oC||210||ns|
|tr|Rise Time|||55||ns|
|td(off)|Turn-Off DelayTime|||275||ns|
|tf|Fall Time|||175||ns|
|Eon|Turn-On Switching<br>Loss|||66.0||mJ|
|Eoff|Turn-Off Switching<br>Loss|||28.9||mJ|
|ISC|SC Data|tP≤10μs,VGE=15V,<br>Tj=125oC,VCC=900V,<br>VCEM≤1200V||3900||A|



©2014 STARPOWER Semiconductor Ltd.         10/8/2014        3/6          Preliminary 

**Diode Characteristics** TC=25[o] C unless otherwise noted 

|**Symbol **|**Parameter **|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VF|Diode Forward<br>Voltage|IF=600A,VGE=0V,Tj=25~~o~~C||2.25|2.70|V|
|||IF=600A,VGE=0V,Tj=125~~o~~C||2.35|||
|Qr|Recovered Charge|VCC=600V,IF=600A,<br>-di/dt=12kA/μs,VGE=±15V,<br>Tj=25oC||42.0||μC|
|IRM|Peak Reverse<br>Recovery Current|||492||A|
|Erec|Reverse Recovery<br>Energy|||16.6||mJ|
|Qr|Recovered Charge|VCC=600V,IF=600A,<br>-di/dt=12kA/μs,VGE=±15V,<br>Tj=125oC||80.4||μC|
|IRM|Peak Reverse<br>RecoveryCurrent|||672||A|
|Erec|Reverse Recovery<br>Energy|||37.9||mJ|



**Module Characteristics** TC=25[o] C unless otherwise noted 

|**Symbol **|**Parameter **|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|
|LCE|StrayInductance|||20|nH|
|RCC’+EE’|Module Lead Resistance,Terminal to Chip||0.18||mΩ|
|RthJC|Junction-to-Case (per IGBT)<br>Junction-to-Case(per Diode)|||0.031<br>0.070|K/W|
|RthCH|Case-to-Heatsink (per IGBT)<br>Case-to-Heatsink (per Diode)<br>Case-to-Heatsink(per Module)||0.051<br>0.114<br>0.035||K/W|
|M|Terminal Connection Torque, Screw M4<br>Terminal Connection Torque, Screw M6<br>MountingTorque, ScrewM6|1.1<br>2.5<br>3.0||2.0<br>5.0<br>5.0|N.m|
|G|Weightof Module||300||g|



©2014 STARPOWER Semiconductor Ltd.         10/8/2014        4/6          Preliminary 

## **Circuit Schematic** 

## **Package Dimensions** 

©2014 STARPOWER Semiconductor Ltd.         10/8/2014        5/6          Preliminary 

GD600SGU120C2S                                                               IGBT Module 

## **Terms and Conditions of Usage** 

The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. 

This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. 

Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. 

Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. 

Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. 

If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. 

©2014 STARPOWER Semiconductor Ltd.         10/8/2014        6/6          Preliminary 



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