# IGBT Module, Single Chopper, 630 A, 1.7 V, 2.083 kW, 175 °C, Module
**URL**: https://novapart.co/products/GD400CUY120C2S/igbt-module-single-chopper-630-a-17-v-2083-kw-175
**SKU**: GD400CUY120C2S
**Manufacturer**: STARPOWER
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €86.7200
**Stock**: 10+
**Lead Time**: 162 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| Product Range | - |
| Igbt Technology | Trench |
| Igbt Termination | Screw |
| Power Dissipation | 2.083kW |
| Igbt Configuration | Single Chopper |
| Transistor Mounting | Module |
| Transistor Case Style | Module |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 630A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 1.7V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:4066253/)
GD400CUY120C2S IGBT Module
## **STARPOWER**
##
## **IGBT**
## **GD400CUY120C2S**
**1200V/400A chopper in one-package**
## **General Description**
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS.
## **Features**
- Low VCE(sat) Trench IGBT technology
- 10μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175[o] C
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
## **Typical Applications**
- Inverter for motor drive
- AC and DC servo drive amplifier
- Uninterruptible power supply
## **Equivalent Circuit Schematic**
©2018 STARPOWER Semiconductor Ltd. 5/5/2018 1/9 SN0C
GD400CUY120C2S IGBT Module
## **Absolute Maximum Ratings** TC=25[o] C unless otherwise noted
## **IGBT**
|**IGBT**||||
|---|---|---|---|
|**Symbol**|**Description**|**Value**|**Unit**|
|VCES|Collector-EmitterVoltage|1200|V|
|VGES|Gate-Emitter Voltage|±20|V|
|IC|Collector Current @ TC=25~~o~~C
@ TC=100oC|630
400|A|
|ICM|PulsedCollectorCurrent tp=1ms|800|A|
|PD|Maximum Power Dissipation @ Tj=175~~o~~C|2083|W|
|**Diode**||||
|**Symbol**|**Description**|**Value**|**Unit**|
|VRRM|Repetitive Peak ReverseVoltage|1200|V|
|IF|Diode Continuous Forward Current|400|A|
|IFM|Diode Maximum ForwardCurrent tp=1ms|800|A|
## **Module**
|**Module**||||
|---|---|---|---|
|**Symbol**|**Description**|**Value**|**Unit**|
|Tjmax|Maximum Junction Temperature|175|~~o~~C|
|Tjop|Operating Junction Temperature|-40to +150|~~o~~C|
|TSTG|Storage Temperature Range|-40 to +125|~~o~~C|
|VISO|Isolation Voltage RMS,f=50Hz,t=1min|4000|V|
©2018 STARPOWER Semiconductor Ltd. 5/5/2018 2/9 SN0C
GD400CUY120C2S IGBT Module
**IGBT Characteristics** TC=25[o] C unless otherwise noted
|**IGBT**|**Characteristics**TC|=25oC unless otherwise n|oted||||
|---|---|---|---|---|---|---|
|**Symbol **|**Parameter **|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|VCE(sat)|Collector to Emitter
Saturation Voltage|IC=400A,VGE=15V,
Tj=25oC||1.70|2.15|V|
|||IC=400A,VGE=15V,
Tj=125oC||1.95|||
|||IC=400A,VGE=15V,
Tj=150oC||2.00|||
|VGE(th)|Gate-Emitter Threshold
Voltage|IC=10.0mA,VCE=VGE,
Tj=25oC|5.2|6.0|6.8|V|
|ICES|Collector Cut-Off
Current|VCE=VCES,VGE=0V,
Tj=25oC|||5.0|mA|
|IGES|Gate-Emitter Leakage
Current|VGE=VGES,VCE=0V,
Tj=25oC|||400|nA|
|RGint|InternalGate Resistance|||1.9||Ω|
|Cies|Input Capacitance|VCE=25V,f=1MHz,
VGE=0V||41.4||nF|
|Cres|Reverse Transfer
Capacitance|||1.16||nF|
|QG|GateCharge|VGE=15V||3.11||μC|
|td(on)|Turn-On DelayTime|VCC=600V,IC=400A,
RG=2.0Ω,VGE=±15V,
Tj=25oC||257||ns|
|tr|Rise Time|||96||ns|
|td(off)|Turn-Off DelayTime|||628||ns|
|tf|Fall Time|||103||ns|
|Eon|Turn-On Switching
Loss|||23.5||mJ|
|Eoff|Turn-Off Switching
Loss|||34.0||mJ|
|td(on)|Turn-On DelayTime|VCC=600V,IC=400A,
RG=2.0Ω,VGE=±15V,
Tj=125oC||268||ns|
|tr|Rise Time|||107||ns|
|td(off)|Turn-Off DelayTime|||659||ns|
|tf|Fall Time|||144||ns|
|Eon|Turn-On Switching
Loss|||35.3||mJ|
|Eoff|Turn-Off Switching
Loss|||51.5||mJ|
|td(on)|Turn-On DelayTime|VCC=600V,IC=400A,
RG=2.0Ω,VGE=±15V,
Tj=150oC||278||ns|
|tr|Rise Time|||118||ns|
|td(off)|Turn-Off DelayTime|||680||ns|
|tf|Fall Time|||155||ns|
|Eon|Turn-On Switching
Loss|||38.5||mJ|
|Eoff|Turn-Off Switching
Loss|||56.7||mJ|
|ISC|SC Data|tP≤10μs,VGE=15V,
Tj=150oC,VCC=900V,
VCEM≤1200V||1600||A|
©2018 STARPOWER Semiconductor Ltd. 5/5/2018 3/9 SN0C
GD400CUY120C2S IGBT Module
**Diode Characteristics** TC=25[o] C unless otherwise noted
|**Symbol **|**Parameter **|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VF|Diode Forward
Voltage|IF=400A,VGE=0V,Tj=25~~o~~C||1.65|2.10|V|
|||IF=400A,VGE=0V,Tj=125~~o~~C||1.65|||
|||IF=400A,VGE=0V,Tj=150~~o~~C||1.65|||
|Qr|Recovered Charge|VR=600V,IF=400A,
-di/dt=5000A/μs,VGE=-15V
Tj=25oC||38.0||μC|
|IRM|Peak Reverse
RecoveryCurrent|||285||A|
|Erec|Reverse Recovery
Energy|||19.0||mJ|
|Qr|RecoveredCharge|VR=600V,IF=400A,
-di/dt=5000A/μs,VGE=-15V
Tj=125oC||66.5||μC|
|IRM|Peak Reverse
Recovery Current|||380||A|
|Erec|Reverse Recovery
Energy|||36.6||mJ|
|Qr|RecoveredCharge|VR=600V,IF=400A,
-di/dt=5000A/μs,VGE=-15V
Tj=150oC||76.0||μC|
|IRM|Peak Reverse
Recovery Current|||399||A|
|Erec|Reverse Recovery
Energy|||41.8||mJ|
**Module Characteristics** TC=25[o] C unless otherwise noted
|**Symbol **|**Parameter **|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|
|LCE|StrayInductance|||20|nH|
|RCC’+EE’|Module Lead Resistance,Terminal to Chip||0.35||mΩ|
|RthJC|Junction-to-Case (per IGBT)
Junction-to-Case(per Diode)|||0.072
0.095|K/W|
|RthCH|Case-to-Heatsink (per IGBT)
Case-to-Heatsink (per Diode)
Case-to-Heatsink(per Module)||0.035
0.046
0.010||K/W|
|M|Terminal Connection Torque, Screw M6
MountingTorque, ScrewM6|2.5
3.0||5.0
5.0|N.m|
|G|Weight of Module||300||g|
©2018 STARPOWER Semiconductor Ltd. 5/5/2018 4/9 SN0C
GD400CUY120C2S IGBT Module
**==> picture [513 x 657] intentionally omitted <==**
**----- Start of picture text -----**
800 800
VGE=15V VCE=20V
600 600
400 400
200 200
Tj=25℃ Tj=25℃
Tj=125℃ Tj=125℃
Tj=150℃ Tj=150℃
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 5 6 7 8 9 10 11 12 13
VCE [V] VGE [V]
Fig 1. IGBT Output Characteristics Fig 2. IGBT Transfer Characteristics
140 350
Eon Tj=125℃ Eon Tj=125℃
Eoff Tj=125℃ Eoff Tj=125℃
120 300
Eon Tj=150℃ Eon Tj=150℃
Eoff Tj=150℃ Eoff Tj=150℃
100 250
VCC=600V VCC=600V
80 RVGGE=2.0Ω = ± 15V 200 VICGE=400A = ± 15V
60 150
40 100
20 50
0 0
0 200 400 600 800 0 4 8 12 16 20
IC [A] RG [Ω]
[A] [A]
C C
I I
E [mJ] E [mJ]
**----- End of picture text -----**
Fig 3. IGBT Switching Loss vs. IC Fig 4. IGBT Switching Loss vs. RG
©2018 STARPOWER Semiconductor Ltd. 5/5/2018 5/9 SN0C
GD400CUY120C2S IGBT Module
**==> picture [513 x 680] intentionally omitted <==**
**----- Start of picture text -----**
1000 0.1
IGBT
Module
800
600
0.01
400
200 RG=2.0Ω i: 1 2 3 4
VGE= ± 15V rτii[K/W]: 0.0041 0.0239 0.0231 0.0209 [s]: 0.01 0.02 0.05 0.1
T =150 [o] C
j
0 0.001
0 350 700 1050 1400 0.001 0.01 0.1 1 10
VCE [V] t [s]
Fig 5. RBSOA Fig 6. IGBT Transient Thermal Impedance
800 60
Tj=25℃
Erec Tj=125℃
Tj=125℃
Tj=150℃ 50 Erec Tj=150℃
600
40
400 30
20
200 VCC=600V
10 RG=2.0Ω
VGE=-15V
0 0
0 0.5 1 1.5 2 2.5 0 200 400 600 800
VF [V] IF [A]
Fig 7. Diode Forward Characteristics Fig 8. Diode Switching Loss vs. IF
[A] [K/W]
C
I
thJC
Z
[A]
F
I E [mJ]
**----- End of picture text -----**
©2018 STARPOWER Semiconductor Ltd. 5/5/2018 6/9 SN0C
GD400CUY120C2S IGBT Module
**==> picture [513 x 314] intentionally omitted <==**
**----- Start of picture text -----**
45 0.1
Erec Tj=125℃ Diode
40
Erec Tj=150℃
35
30
25
0.01
20
15
10
VCC=600V i: 1 2 3 4
5 IF=400A rτii[K/W]: 0.0056 0.0313 0.0305 0.0276 [s]: 0.01 0.02 0.05 0.1
VGE=-15V
0 0.001
0 4 8 12 16 20 0.001 0.01 0.1 1 10
RG [Ω] t [s]
[K/W]
E [mJ]
thJC
Z
**----- End of picture text -----**
Fig 9. Diode Switching Loss vs. RG Fig 10. Diode Transient Thermal Impedance
©2018 STARPOWER Semiconductor Ltd. 5/5/2018 7/9 SN0C
GD400CUY120C2S IGBT Module
## **Circuit Schematic**
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**----- Start of picture text -----**
6
7
1 2 3
**----- End of picture text -----**
## **Package Dimensions**
Dimensions in Millimeters
**==> picture [35 x 35] intentionally omitted <==**
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©2018 STARPOWER Semiconductor Ltd. 5/5/2018 8/9 SN0C
GD400CUY120C2S IGBT Module
## **Terms and Conditions of Usage**
The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application.
This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics.
Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify.
If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved.
©2018 STARPOWER Semiconductor Ltd. 5/5/2018 9/9 SN0C
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- [Supplier page](https://es.farnell.com/starpower/gd400cuy120c2s/igbt-module-1-2kv-630a-2-083kw/dp/4066253)
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