# IGBT Module, Half Bridge, 600 A, 2 V, 2.941 kW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2986063/)

**URL**: https://novapart.co/products/GD300HFY120C2S/igbt-module-half-bridge-600-a-2-v-2941-kw-150-c
**SKU**: GD300HFY120C2S
**Manufacturer**: STARPOWER
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €64.1500
**Stock**: 10+
**Lead Time**: 162 days (indicative)

## Description

Transistor Polarity:Dual N Channel; DC Collector Current:600A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:2.941kW; Collector Emitter Voltage V(br)ceo:1

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| Product Range | - |
| Igbt Technology | Trench Field Stop |
| Igbt Termination | Stud |
| Power Dissipation | 2.941kW |
| Igbt Configuration | Half Bridge |
| Transistor Mounting | Panel |
| Dc Collector Current | 600A |
| Power Dissipation Pd | 2.941kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 600A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Saturation Voltage Vce(On) | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2986063/)

GD300HFY120C2S                                                               IGBT Module 

## **STARPOWER** 

**SEMICONDUCTOR                                              IGBT** 

## **GD300HFY120C2S** 

**1200V/300A 2 in one-package** 

## **General Description** 

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. 

## **Features** 

- Low VCE(sat) Trench IGBT technology 

- 10μs short circuit capability 

- VCE(sat) with positive temperature coefficient 

- Maximum junction temperature 175[o] C 

- Low inductance case 

- Fast & soft reverse recovery anti-parallel FWD 

- Isolated copper baseplate using HPS DBC technology 

## **Typical Applications** 

- Inverter for motor drive 

- AC and DC servo drive amplifier 

- Uninterruptible power supply 

## **Equivalent Circuit Schematic** 

©2015 STARPOWER Semiconductor Ltd.            12/25/2015            1/9          SX0A 

GD300HFY120C2S                                                               IGBT Module 

## **Absolute Maximum Ratings** TC=25[o] C unless otherwise noted 

## **IGBT** 

|**IGBT**||||
|---|---|---|---|
|**Symbol**|**Description**|**Value**|**Unit**|
|VCES|Collector-EmitterVoltage|1200|V|
|VGES|Gate-Emitter Voltage|±20|V|
|IC|Collector Current  @ TC=25~~o~~C<br>@ TC=100oC|600<br>300|A|
|ICM|PulsedCollectorCurrent  tp=1ms|600|A|
|PD|Maximum Power Dissipation  @ Tj=175~~o~~C|2941|W|
|**Diode**||||
|**Symbol**|**Description**|**Value**|**Unit**|
|VRRM|Repetitive Peak ReverseVoltage|1200|V|
|IF|Diode Continuous Forward Current|300|A|
|IFM|Diode Maximum ForwardCurrent  tp=1ms|600|A|
|**Module**||||
|**Symbol**|**Description**|**Value**|**Unit**|
|Tjmax|Maximum Junction Temperature|175|~~o~~C|
|Tjop|Operating Junction Temperature|-40to +150|~~o~~C|
|TSTG|Storage Temperature Range|-40 to +125|~~o~~C|
|VISO|Isolation Voltage  RMS,f=50Hz,t=1min|4000|V|



©2015 STARPOWER Semiconductor Ltd.            12/25/2015            2/9          SX0A 

GD300HFY120C2S                                                               IGBT Module 

**IGBT Characteristics** TC=25[o] C unless otherwise noted 

|**IGBT**|**Characteristics**TC|=25oC unless otherwise n|oted||||
|---|---|---|---|---|---|---|
|**Symbol **|**Parameter **|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|VCE(sat)|Collector to Emitter<br>Saturation Voltage|IC=300A,VGE=15V,<br>Tj=25oC||1.70|2.15|V|
|||IC=300A,VGE=15V,<br>Tj=125oC||1.95|||
|||IC=300A,VGE=15V,<br>Tj=150oC||2.00|||
|VGE(th)|Gate-Emitter Threshold<br>Voltage|IC=7.50mA,VCE=VGE,<br>Tj=25oC|5.2|6.0|6.8|V|
|ICES|Collector Cut-Off<br>Current|VCE=VCES,VGE=0V,<br>Tj=25oC|||1.0|mA|
|IGES|Gate-Emitter Leakage<br>Current|VGE=VGES,VCE=0V,<br>Tj=25oC|||400|nA|
|RGint|InternalGate Resistance|||2.5||Ω|
|td(on)|Turn-On DelayTime|VCC=600V,IC=300A,<br>RG=1.3Ω,VGE=±15V,<br>Tj=25oC||182||ns|
|tr|Rise Time|||54||ns|
|td(off)|Turn-Off DelayTime|||464||ns|
|tf|Fall Time|||72||ns|
|Eon|Turn-On Switching<br>Loss|||10.6||mJ|
|Eoff|Turn-Off Switching<br>Loss|||25.8||mJ|
|td(on)|Turn-On DelayTime|VCC=600V,IC=300A,<br>RG=1.3Ω,VGE=±15V,<br>Tj=125oC||193||ns|
|tr|Rise Time|||54||ns|
|td(off)|Turn-Off DelayTime|||577||ns|
|tf|Fall Time|||113||ns|
|Eon|Turn-On Switching<br>Loss|||16.8||mJ|
|Eoff|Turn-Off Switching<br>Loss|||38.6||mJ|
|td(on)|Turn-On DelayTime|VCC=600V,IC=300A,<br>RG=1.3Ω,VGE=±15V,<br>Tj=150oC||203||ns|
|tr|Rise Time|||54||ns|
|td(off)|Turn-Off DelayTime|||618||ns|
|tf|Fall Time|||124||ns|
|Eon|Turn-On Switching<br>Loss|||18.5||mJ|
|Eoff|Turn-Off Switching<br>Loss|||43.3||mJ|
|ISC|SC Data|tP≤10μs,VGE=15V,<br>Tj=150oC,VCC=900V,<br>VCEM≤1200V||1200||A|



©2015 STARPOWER Semiconductor Ltd.            12/25/2015            3/9          SX0A 

GD300HFY120C2S                                                               IGBT Module 

**Diode Characteristics** TC=25[o] C unless otherwise noted 

|**Symbol **|**Parameter **|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VF|Diode Forward<br>Voltage|IF=300A,VGE=0V,Tj=25~~o~~C||1.82|2.25|V|
|||IF=300A,VGE=0V,Tj=125~~o~~C||1.95|||
|||IF=300A,VGE=0V,Tj=150~~o~~C||2.00|||
|Qr|Recovered Charge|VCC=600V,IF=300A,<br>-di/dt=7300A/μs,VGE=-15V,<br>Tj=25oC||29.5||μC|
|IRM|Peak Reverse<br>RecoveryCurrent|||210||A|
|Erec|Reverse Recovery<br>Energy|||14.4||mJ|
|Qr|RecoveredCharge|VCC=600V,IF=300A,<br>-di/dt=7300A/μs,VGE=-15V,<br>Tj=125oC||42.3||μC|
|IRM|Peak Reverse<br>Recovery Current|||272||A|
|Erec|Reverse Recovery<br>Energy|||20.4||mJ|
|Qr|RecoveredCharge|VCC=600V,IF=300A,<br>-di/dt=7300A/μs,VGE=-15V,<br>Tj=150oC||44.6||μC|
|IRM|Peak Reverse<br>Recovery Current|||298||A|
|Erec|Reverse Recovery<br>Energy|||22.5||mJ|



**Module Characteristics** TC=25[o] C unless otherwise noted 

|**Symbol **|**Parameter **|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|
|LCE|StrayInductance|||20|nH|
|RCC’+EE’|Module Lead Resistance,Terminal to Chip||0.35||mΩ|
|RthJC|Junction-to-Case (per IGBT)<br>Junction-to-Case(per Diode)|||0.051<br>0.084|K/W|
|RthCH|Case-to-Heatsink (per IGBT)<br>Case-to-Heatsink (per Diode)<br>Case-to-Heatsink(per Module)||0.113<br>0.185<br>0.035||K/W|
|M|Terminal Connection Torque, Screw M6<br>MountingTorque, ScrewM6|2.5<br>3.0||5.0<br>5.0|N.m|
|G|Weight of Module||300||g|



©2015 STARPOWER Semiconductor Ltd.            12/25/2015            4/9          SX0A 

GD300HFY120C2S                                                               IGBT Module 

**==> picture [513 x 657] intentionally omitted <==**

**----- Start of picture text -----**<br>
600 600<br>550 550<br>VGE=15V  VCE=20V<br>500 500<br>450 450<br>400 400<br>350 25 [o] C  350<br>300 150 [o] C  300<br>250 250<br>200 200<br>150 150 150 [o] C<br>100 100<br>25 [o] C<br>50 50<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 5 6 7 8 9 10 11 12 13<br>VCE  [V]  VGE [V]<br>Fig 1. IGBT Output Characteristics                          Fig 2. IGBT Transfer Characteristics<br>100 100<br>90 VCC=600V<br>RG=1.3Ω<br>80 VGE= ± 15V  80<br>T =150 [o] C<br>j<br>70 Eon<br>60 60<br>50 Eoff<br>40 40<br>Eoff<br>30<br>VCC=600V<br>20 20 IC=300A<br>Eon  VGE= ± 15V<br>10<br>T =150 [o] C<br>j<br>0 0<br>0 100 200 300 400 500 600 0 2 4 6 8 10 12 14<br>IC [A]  RG [Ω]<br> [A]   [A]<br>C C<br>I I<br>E [mJ]  E [mJ]<br>**----- End of picture text -----**<br>


Fig 3. IGBT Switching Loss vs. IC                              Fig 4. IGBT Switching Loss vs. RG ©2015 STARPOWER Semiconductor Ltd.            12/25/2015            5/9          SX0A 

GD300HFY120C2S                                                               IGBT Module 

**==> picture [513 x 712] intentionally omitted <==**

**----- Start of picture text -----**<br>
700 0.1<br>Module  IGBT<br>600<br>500<br>400<br>0.01<br>300<br>200<br>RG=1.3Ω  i:                1            2            3            4<br>100 VGE= ± 15V  rτii[K/W]:   0.0030   0.0169   0.0163   0.0148 [s]:          0.01       0.02       0.05       0.1<br>T =150 [o] C<br>j<br>0 0.001<br>0 350 700 1050 1400 0.001 0.01 0.1 1 10<br>VCE [V]  t [s]<br>Fig 5. RBSOA                                       Fig 6. IGBT Transient Thermal Impedance<br>600 35<br>550<br>30<br>500<br>450<br>25<br>400 Erec<br>350 20<br>300<br>250 15<br>200<br>10 VCC=600V<br>150 RG=1.3Ω<br>150 [o] C  VGE=-15V<br>100<br>5 T =150 [o] C<br>25 [o] C  j<br>50<br>0 0<br>0 0.5 1 1.5 2 2.5 3 0 100 200 300 400 500 600<br>VF  [V]  IF [A]<br>Fig 7. Diode Forward Characteristics    Fig 8. Diode Switching Loss vs. IF<br>©2015 STARPOWER Semiconductor Ltd.            12/25/2015            6/9          SX0A<br> [A]   [K/W]<br>C<br>I<br>thJC<br>Z<br> [A]<br>F<br>I E [mJ]<br>**----- End of picture text -----**<br>


GD300HFY120C2S                                                               IGBT Module 

**==> picture [513 x 314] intentionally omitted <==**

**----- Start of picture text -----**<br>
30 0.1<br>Diode<br>VCC=600V<br>IF=300A<br>25 VGE=-15V<br>T =150 [o] C<br>j<br>20<br>0.01<br>15 Erec<br>10 i:                1            2            3            4<br>ri[K/W]:   0.0050   0.0277   0.0269   0.0244<br>τi[s]:          0.01       0.02       0.05       0.1<br>5 0.001<br>0 2 4 6 8 10 12 14 0.001 0.01 0.1 1 10<br>RG [Ω]  t [s]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


Fig 9. Diode Switching Loss vs. RG                      Fig 10. Diode Transient Thermal Impedance 

©2015 STARPOWER Semiconductor Ltd.            12/25/2015            7/9          SX0A 

GD300HFY120C2S                                                               IGBT Module 

## **Circuit Schematic** 

## **Package Dimensions** 

Dimensions in Millimeters 

©2015 STARPOWER Semiconductor Ltd.            12/25/2015            8/9          SX0A 

GD300HFY120C2S                                                               IGBT Module 

## **Terms and Conditions of Usage** 

The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. 

This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. 

Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. 

Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. 

Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. 

If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. 

©2015 STARPOWER Semiconductor Ltd.            12/25/2015            9/9          SX0A 



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- [Supplier page](https://es.farnell.com/starpower/gd300hfy120c2s/igbt-mod-1-2kv-600a-150deg-c-2/dp/2986063)
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