# Silicon Carbide Schottky Diode, MPS Gen IV, Dual Isolated, 1.7 kV, 230 A, 524 nC, SOT-227

![Product image](https://novapart.co/image/farnell:3598636/)

**URL**: https://novapart.co/products/GD2X75MPS17N/silicon-carbide-schottky-diode-mps-gen-iv-dual
**SKU**: GD2X75MPS17N
**Manufacturer**: GENESIC
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €84.2200
**Stock**: 10+
**Lead Time**: 46 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (19-Jan-2021) |
| No. Of Pins | 4 Pin |
| Product Range | MPS Gen IV |
| Qualification | - |
| Diode Mounting | Panel |
| Diode Case Style | SOT-227 |
| Diode Configuration | Dual Isolated |
| Average Forward Current | 230A |
| Total Capacitive Charge | 524nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 1.7kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3598636/)

**TM** GD2X75MPS17N 1700V 150A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode VRRM = 1700 V IF (TC = 127°C) = 150 A * QC = 1048 nC * Features Package •  Gen4 Thin Chip Technology for Low VF **A A** •  Enhanced Surge and Avalanche Robustness •  Superior Figure of Merit QC/IF **RoHS** •  Low Thermal Resistance •  Low Reverse Leakage Current •  Temperature Independent Fast Switching •  Positive Temperature Coefficient of VF : ~~-~~ **SOT-227 K K REACH** •  Low VF for High Temperature Operation Advantages Applications •  Improved System Efficiency •  EV Fast Chargers 

- High System Reliability •  Solar Inverters 

- Optimal Price Performance •  Wind Energy Converters 

- Reduced Cooling Requirements 

- Increased System Power Density 

- Train Auxiliary Power Supplies 

- High Frequency Rectifiers 

•  Zero Reverse Recovery Current •  Switched Mode Power Supplies •  Easy to Parallel without Thermal Runaway •  Motor Drives •  Improved System Efficiency •  Pulsed Power Absolute Maximum Ratings (At TC = 25°C Unless Otherwise Stated) **Parameter Symbol Conditions Values Unit Note** Repetitive Peak Reverse Voltage (Per Leg) VRRM 1700 V TC = 75°C, D = 1 115 / 230 Continuous Forward Current (Per Leg / Per Device) IF TC = 100°C, D = 1 97 / 194 A Fig. 4 TC = 127°C, D = 1 75 / 150 Non-Repetitive Peak Forward Surge Current, Half Sine TC = 25°C, tP = 10 ms 750 IF,SM A Wave (Per Leg) TC = 150°C, tP = 10 ms 600 Repetitive Peak Forward Surge Current, Half Sine Wave TC = 25°C, tP = 10 ms 450 IF,RM A (Per Leg) TC = 150°C, tP = 10 ms 315 Non-Repetitive Peak Forward Surge Current (Per Leg) IF,MAX TC = 25°C, tP = 10 µs 3750 A i2t Value (Per Leg) ∫i2dt TC = 25°C, tP = 10 ms 2812 A2s Non-Repetitive Avalanche Energy (Per Leg) EAS L = 0.5 mH, IAS = 75 A 1270 mJ Diode Ruggedness (Per Leg) dV/dt VR = 0 ~ 1360 V 200 V/ns Power Dissipation (Per Leg / Per Device) PTOT TC = 25°C 556 / 1112 W Fig. 3 Operating and Storage Temperature T  , Tj stg -55 to 175 °C _* Per Device_ 

Jul. 20 Rev 1 www.genesicsemi.com/sic-schottky-mps/GD2X75MPS17N/GD2X75MPS17N.pdf Page 1 of 7 

**TM** 

## GD2X75MPS17N 1700V 150A SiC Schottky MPS™ Diode 

## Electrical Characteristics (Per Leg) 

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Values<br>Parameter  Symbol  Conditions  Unit  Note<br>Min.  Typ.  Max.<br>IF = 75 A, T  = 25°C j 1.6  1.8<br>Diode Forward Voltage  VF V  Fig. 1<br>IF = 75 A, T  = 175°C j 2.4<br>VR = 1700 V, T  = 25°C j 2  10<br>Reverse Current  IR µA  Fig. 2<br>VR = 1700 V, T  = 175°C j 41<br>VR = 600 V  358<br>Total Capacitive Charge  QC nC  Fig. 7<br>IF ≤ IF,MAX VR = 1200 V  524<br>dIF/dt = 200 A/µs  VR = 600 V<br>Switching Time  tS < 10  ns<br>VR = 1200 V<br>VR = 1 V, f = 1MHz  4577<br>Total Capacitance  C  pF  Fig. 6<br>VR = 1200 V, f = 1MHz  252<br>**----- End of picture text -----**<br>


## Thermal/Package Characteristics 

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Values<br>Parameter  Symbol  Conditions  Unit  Note<br>Min.  Typ.  Max.<br>Thermal Resistance, Junction - Case<br>RthJC 0.27  °C/W  Fig. 9<br>(Per Leg)<br>Weight  WT 28  g<br>Mounting Torque  TM Screws to Heatsink  1.5  Nm<br>Terminal Connection Torque  TC M4 Screws  1.3  Nm<br>t = 1s (50/60 Hz)  3000<br>Isolation Voltage(RMS)  VISO V<br>t = 60s (50/60 Hz)  2500<br>dCtt Terminal to Terminal  10.5<br>Creepage Distance on Surface  mm<br>dCtb Terminal to Backside  8.5<br>dStt Terminal to Terminal  3.2<br>Striking Distance Through Air  mm<br>dStb Terminal to Backside  6.8<br>**----- End of picture text -----**<br>


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www.genesicsemi.com/sic-schottky-mps/GD2X75MPS17N/GD2X75MPS17N.pdf 

Page 2 of 7 

Jul. 20 Rev 1 

GD2X75MPS17N 1700V 150A SiC Schottky MPS™ Diode 

**TM** 

Figure 1: Typical Forward Characteristics (Per Leg) 

## IF = f(VF,T ); tj P = 250 µs 

Figure 3: Power Derating Curves (Per Leg) 

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PTOT = f(TC); T  = 175°C j<br>**----- End of picture text -----**<br>


Figure 2: Typical Reverse Characteristics (Per Leg) 

## IR = f(VR,T )j 

Figure 4: Current Derating Curves (Typical VF) (Per Leg) 

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IF = f(TC); D = tP/T; T  ≤ 175°C; fj SW > 10kHz<br>**----- End of picture text -----**<br>


www.genesicsemi.com/sic-schottky-mps/GD2X75MPS17N/GD2X75MPS17N.pdf 

Page 3 of 7 

Jul. 20 Rev 1 

## GD2X75MPS17N 1700V 150A SiC Schottky MPS™ Diode 

Figure 5: Current Derating Curves (Maximum VF) (Per Leg) 

## IF = f(TC); D = tP/T; T  ≤ 175°C; fj SW > 10kHz 

Figure 7: Typical Capacitive Charge vs Reverse Voltage Characteristics (Per Leg) 

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QC = f(VR); f = 1MHz<br>**----- End of picture text -----**<br>


Figure 6: Typical Junction Capacitance vs Reverse Voltage Characteristics (Per Leg) 

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C = f(VR); f = 1MHz<br>**----- End of picture text -----**<br>


Figure 8: Typical Capacitive Energy vs Reverse Voltage Characteristics (Per Leg) 

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EC = f(VR); f = 1MHz<br>**----- End of picture text -----**<br>


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TM<br>**----- End of picture text -----**<br>


www.genesicsemi.com/sic-schottky-mps/GD2X75MPS17N/GD2X75MPS17N.pdf 

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GD2X75MPS17N 1700V 150A SiC Schottky MPS™ Diode 

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Figure 9: Transient Thermal Impedance (Per Leg) 

Zth,jc = f(tP,D); D = tP/T 

Figure 10: Forward Curve Model (Per Leg) 

## Forward Curve Model Equation: 

IF = (VF - VBI)/RDIFF (A) Built-In Voltage (VBI): |ee VBI(T ) = j m × T  + j n (V) m = -0.00125 (V/°C) n = 1.0 (V) 

Differential Resistance (RDIFF): 

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\ ! 1/RDIFF \<br>H ' H<br>1 I 1<br>pe<br>VBI<br>Forward<br>IF = f(VF,T )j<br>**----- End of picture text -----**<br>


- RDIFF(T ) = j a × Tj[2] + b × T  + j c (Ω) a = 1.61e-07 (Ω/°C2) b = 5.53e-05 (Ω/°C) c = 7.14e-03 (Ω) 

## Forward Power Loss Equation: 

PLOSS = VBI(T ) × Ij AVG + RDIFF(T ) × Ij RMS[2] 

www.genesicsemi.com/sic-schottky-mps/GD2X75MPS17N/GD2X75MPS17N.pdf 

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Jul. 20 Rev 1 

GD2X75MPS17N 1700V 150A SiC Schottky MPS™ Diode 

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Package Dimensions 

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oT SOT-227 Package Outline<br>0.472 (11.9)<br>0.480 (12.19)<br>1.240 (31.5) 0.372 (9.45)<br>1.255 (31.88) 0.378 (9.60)<br>0.310 (7.87) 0.108 (2.74)<br>0.322 (8.18) Ø 0.163 (4.14) 0.124 (3.15)<br>R 3.97 0.169 (4.29)<br>1.049 (26.6)<br>0.163 (4.14) 1.059 (26.90)<br>0.990 (25.1)<br>0.169 (4.29)<br>1.000 (25.40)<br>wo a 0.495 (12.5)<br>0.506 (12.85)<br>0.172 (4.37)<br>0.186 (4.72)<br>0.234 (5.94) 0.191 (4.85) 0.080 (2.03) 0.164 (4.16)<br>0.084 (2.13) 0.174(4.42)<br>Pe ae ——o<br>—<br>0.165 (4.19) M4 0.030 (0.76)<br>0.169 (4.29) 0.033 (0.84)<br>0.588 (14.9)<br>0.594 (15.09)<br>1.186 (30.1)<br>1.192 (30.28)<br>1.494 (37.9)<br>1.504 (38.20)<br>e Package View e<br>Isolated Base<br>A<br>K<br>A<br>K<br>**----- End of picture text -----**<br>


## NOTE 

1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 

2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS. 

www.genesicsemi.com/sic-schottky-mps/GD2X75MPS17N/GD2X75MPS17N.pdf 

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Jul. 20 Rev 1 

GD2X75MPS17N 1700V 150A SiC Schottky MPS™ Diode 

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## Compliance 

## **RoHS Compliance** 

The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS 2), as adopted by EU member states on January 2, 2013 and amended on March 31, 2015 by EU Directive 2015/863. RoHS Declarations for this product can be obtained from your GeneSiC representative. 

## **REACH Compliance** 

REACH substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a GeneSiC representative to insure you get the most up-to-date REACH SVHC Declaration. REACH banned substance information (REACH Article 67) is also available upon request. 

## Disclaimer 

GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. 

Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. 

## Related Links 

- SPICE Models: https://www.genesicsemi.com/sic-schottky-mps/GD2X75MPS17N/GD2X75MPS17N_SPICE.zip 

- PLECS Models: https://www.genesicsemi.com/sic-schottky-mps/GD2X75MPS17N/GD2X75MPS17N_PLECS.zip 

- CAD Models: https://www.genesicsemi.com/sic-schottky-mps/GD2X75MPS17N/GD2X75MPS17N_3D.zip 

- Evaluation Boards: https://www.genesicsemi.com/technical-support 

- Reliability: https://www.genesicsemi.com/reliability 

- Compliance: https://www.genesicsemi.com/compliance 

- Quality Manual: https://www.genesicsemi.com/quality 

## Revision History 

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|---|---|---|---|
|Date|Revision|Comments|Supersedes|
|Jul. 27, 2020|Rev 1|Initial Release|

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## www.genesicsemi.com/sic-schottky-mps/ 

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**Jul. 20 Rev 1 Copyright© 2020 GeneSiC Semiconductor Inc. All Rights Reserved.** 

**Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155, Dulles, VA 20166; USA Page 7 of 7** 



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- [Supplier page](https://es.farnell.com/genesic-semiconductor/gd2x75mps17n/sic-schottky-diode-1-7kv-230a/dp/3598636)
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