# IGBT Module, Single, 3.353 kA, 1.7 V, 10.2 kW, 150 °C, Module
**URL**: https://novapart.co/products/GD2400SGY120C3S/igbt-module-single-3353-ka-17-v-102-kw-150-c
**SKU**: GD2400SGY120C3S
**Manufacturer**: STARPOWER
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €336.6100
**Stock**: 10+
**Lead Time**: 162 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| Product Range | - |
| Igbt Technology | Trench |
| Igbt Termination | Stud |
| Power Dissipation | 10.2kW |
| Igbt Configuration | Single |
| Transistor Mounting | Panel |
| Dc Collector Current | 3.353kA |
| Power Dissipation Pd | 10.2kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 3.353kA |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.7V |
| Collector Emitter Saturation Voltage Vce(On) | 1.7V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3912086/)
GD2400SGY120C3S IGBT Module
## **STARPOWER**
##
## **IGBT**
## **GD2400SGY120C3S**
## **1200V/2400A 1 in one-package**
## **General Description**
STARPOWER IGBT Power Module provides ultrafast switching speed as well as short circuit ruggedness. It’s designed for the applications such as general inverters and UPS.
## **Features**
- Low VCE(sat) Trench IGBT technology
- 10μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175[o] C
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
## **Typical Applications**
- Inverter for motor drive
- AC and DC servo drive amplifier
- Uninterruptible power supply
## **Equivalent Circuit Schematic**
©2017 STARPOWER Semiconductor Ltd. 5/15/2017 1/9 Preliminary
GD2400SGY120C3S IGBT Module
## **Absolute Maximum Ratings** TC=25[o] C unless otherwise noted
## **IGBT**
|**IGBT**||||
|---|---|---|---|
|**Symbol**|**Description**|**Value**|**Unit**|
|VCES|Collector-EmitterVoltage|1200|V|
|VGES|Gate-Emitter Voltage|±20|V|
|IC|Collector Current @ TC=25~~o~~C
@ TC=85oC|3353
2400|A|
|ICM|PulsedCollectorCurrent tp=1ms|4800|A|
|PD|Maximum Power Dissipation @ Tj=175~~o~~C|10.20|kW|
|**Diode**||||
|**Symbol**|**Description**|**Value**|**Unit**|
|VRRM|Repetitive Peak ReverseVoltage|1200|V|
|IF|Diode Continuous Forward Current|2400|A|
|IFM|Diode Maximum ForwardCurrent tp=1ms|4800|A|
## **Module**
|**Module**||||
|---|---|---|---|
|**Symbol**|**Description**|**Value**|**Unit**|
|Tjmax|Maximum Junction Temperature|175|~~o~~C|
|Tjop|Operating Junction Temperature|-40to +150|~~o~~C|
|TSTG|Storage Temperature Range|-40 to +125|~~o~~C|
|VISO|Isolation Voltage RMS,f=50Hz,t=1min|4000|V|
©2017 STARPOWER Semiconductor Ltd. 5/15/2017 2/9 Preliminary
**IGBT Characteristics** TC=25[o] C unless otherwise noted
|**IGBT**|**Characteristics**TC|=25oC unless otherwise n|oted||||
|---|---|---|---|---|---|---|
|**Symbol **|**Parameter **|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|VCE(sat)|Collector to Emitter
Saturation Voltage|IC=2400A,VGE=15V,
Tj=25oC||1.70|2.15|V|
|||IC=2400A,VGE=15V,
Tj=125oC||1.95|||
|||IC=2400A,VGE=15V,
Tj=150oC||2.00|||
|VGE(th)|Gate-Emitter Threshold
Voltage|IC=60.0mA,VCE=VGE,
Tj=25oC|5.2|6.0|6.8|V|
|ICES|Collector Cut-Off
Current|VCE=VCES,VGE=0V,
Tj=25oC|||1.0|mA|
|IGES|Gate-Emitter Leakage
Current|VGE=VGES,VCE=0V,
Tj=25oC|||400|nA|
|RGint|InternalGate Resistance|||0.94||Ω|
|Cies|Input Capacitance|VCE=25V,f=1MHz,
VGE=0V||168||nF|
|Cres|Reverse Transfer
Capacitance|||9.60||nF|
|QG|GateCharge|VGE=-15…+15V||20.8||μC|
|td(on)|Turn-On DelayTime|VCC=600V,IC=2400A,
RGon=1.6Ω,RGoff=0.3Ω,
VGE=±15V,
Tj=25oC||535||ns|
|tr|Rise Time|||353||ns|
|td(off)|Turn-Off DelayTime|||1082||ns|
|tf|Fall Time|||206||ns|
|Eon|Turn-On Switching
Loss|||391||mJ|
|Eoff|Turn-Off Switching
Loss|||464||mJ|
|td(on)|Turn-On DelayTime|VCC=600V,IC=2400A,
RGon=1.6Ω,RGoff=0.3Ω,
VGE=±15V,
Tj=125oC||578||ns|
|tr|Rise Time|||353||ns|
|td(off)|Turn-Off DelayTime|||1185||ns|
|tf|Fall Time|||237||ns|
|Eon|Turn-On Switching
Loss|||492||mJ|
|Eoff|Turn-Off Switching
Loss|||577||mJ|
|td(on)|Turn-On DelayTime|VCC=600V,IC=2400A,
RGon=1.6Ω,RGoff=0.3Ω,
VGE=±15V,
Tj=150oC||589||ns|
|tr|Rise Time|||353||ns|
|td(off)|Turn-Off DelayTime|||1236||ns|
|tf|Fall Time|||247||ns|
|Eon|Turn-On Switching
Loss|||540||mJ|
|Eoff|Turn-Off Switching
Loss|||613||mJ|
|ISC|SC Data|tP≤10μs,VGE=15V,
Tj=150oC,VCC=800V,
VCEM≤1200V||9600||A|
©2017 STARPOWER Semiconductor Ltd. 5/15/2017 3/9 Preliminary
## **Diode Characteristics** TC=25[o] C unless otherwise noted
|**Symbol **|**Parameter **|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VF|Diode Forward
Voltage|IF=2400A,VGE=0V,Tj=25~~o~~C||1.65|2.15|V|
|||IF=2400A,VGE=0V,Tj=125~~o~~C||1.65|||
|||IF=2400A,VGE=0V,Tj=150~~o~~C||1.65|||
|Qr|Recovered Charge|VCC=600V,IF=2400A,
-di/dt=5938A/μs,VGE=±15V,
Tj=25oC||233||μC|
|IRM|Peak Reverse
RecoveryCurrent|||765||A|
|Erec|Reverse Recovery
Energy|||99.8||mJ|
|Qr|RecoveredCharge|VCC=600V,IF=2400A,
-di/dt=5938A/μs,VGE=±15V,
Tj=125oC||409||μC|
|IRM|Peak Reverse
Recovery Current|||1093||A|
|Erec|Reverse Recovery
Energy|||176||mJ|
|Qr|RecoveredCharge|VCC=600V,IF=2400A,
-di/dt=5938A/μs,VGE=±15V,
Tj=150oC||466||μC|
|IRM|Peak Reverse
Recovery Current|||1140||A|
|Erec|Reverse Recovery
Energy|||200||mJ|
**Module Characteristics** TC=25[o] C unless otherwise noted
|**Symbol **|**Parameter **|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|
|LCE|StrayInductance||12||nH|
|RCC’+EE’|Module Lead Resistance,Terminal to Chip||0.19||mΩ|
|RthJC|Junction-to-Case (per IGBT)
Junction-to-Case(per Diode)|||14.7
22.8|K/kW|
|RthCH|Case-to-Heatsink (per IGBT)
Case-to-Heatsink (per Diode)
Case-to-Heatsink(per Module)||9.8
15.3
6.0||K/kW|
|M|Terminal Connection Torque, Screw M4
Terminal Connection Torque, Screw M8
MountingTorque,Screw M6|1.8
8.0
4.25||2.1
10
5.75|N.m|
|G|Weight of Module||1500||g|
©2017 STARPOWER Semiconductor Ltd. 5/15/2017 4/9 Preliminary
GD2400SGY120C3S IGBT Module
**==> picture [513 x 657] intentionally omitted <==**
**----- Start of picture text -----**
4800 4800
4000 VGE=15V 4000 VCE=20V
3200 3200
2400 2400
1600 1600
800 Tj=25℃ 800 Tj=25℃
Tj=125℃ Tj=125℃
Tj=150℃ Tj=150℃
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 5 6 7 8 9 10 11 12 13
VCE [V] VGE [V]
Fig 1. IGBT Output Characteristics Fig 2. IGBT Transfer Characteristics
2000 4000
Eon Tj=125℃ Eon Tj=125℃
Eoff Tj=125℃ 3500 Eoff Tj=125℃
1600 Eon Tj=150℃ Eon Tj=150℃
Eoff Tj=150℃ 3000 Eoff Tj=150℃
VCC=600V
1200 RGon=1.6Ω 2500
RGoff=0.3Ω
VGE= ± 15V 2000
800
1500
1000
400 VCC=600V
500 IC=2400A
VGE= ± 15V
0 0
0 800 1600 2400 3200 4000 4800 0 4 8 12 16
IC [A] RG [Ω]
[A] [A]
C C
I I
E [mJ] E [mJ]
**----- End of picture text -----**
Fig 3. IGBT Switching Loss vs. IC Fig 4. IGBT Switching Loss vs. RG
©2017 STARPOWER Semiconductor Ltd. 5/15/2017 5/9 Preliminary
GD2400SGY120C3S IGBT Module
**==> picture [513 x 680] intentionally omitted <==**
**----- Start of picture text -----**
5000 100
Module
4000 IGBT
10
3000
2000
1
1000 RGon=1.6Ω
i: 1 2 3 4
VGE= ± 15V ri[K/kW]: 6.1774 7.4068 0.8386 0.2772
T =150 [o] C τi[s]: 0.6897 0.0563 0.0300 0.0038
j
0 0.1
0 350 700 1050 1400 0.001 0.01 0.1 1 10
VCE [V] t [s]
Fig 5. RBSOA Fig 6. IGBT Transient Thermal Impedance
4800
Tj=25℃ 290 Erec Tj=125℃
Tj=125℃
Erec Tj=150℃
4000 Tj=150℃
240
3200
190
2400
140
1600
VCC=600V
800 90 RGon=1.6Ω
VGE=-15V
0 40
0 0.5 1 1.5 2 2.5 0 800 1600 2400 3200 4000 4800
VF [V] IF [A]
Fig 7. Diode Forward Characteristics Fig 8. Diode Switching Loss vs. IF
[A]
C [K/kW]
I thJC
Z
[A]
F
I E [mJ]
**----- End of picture text -----**
©2017 STARPOWER Semiconductor Ltd. 5/15/2017 6/9 Preliminary
GD2400SGY120C3S IGBT Module
**==> picture [513 x 314] intentionally omitted <==**
**----- Start of picture text -----**
250 100
Erec Tj=125℃
Diode
Erec Tj=150℃
200
10
150
100
1
50 VCC=600V
IF=2400A i: 1 2 3 4 ri[K/kW]: 9.5811 11.4882 1.3006 0.4301
VGE=-15V τi[s]: 0.6897 0.0563 0.0300 0.0038
0 0.1
0 4 8 12 16 0.001 0.01 0.1 1 10
RG [Ω] t [s]
[K/kW]
E [mJ]
thJC
Z
**----- End of picture text -----**
Fig 9. Diode Switching Loss vs. RG Fig 10. Diode Transient Thermal Impedance
©2017 STARPOWER Semiconductor Ltd. 5/15/2017 7/9 Preliminary
GD2400SGY120C3S IGBT Module
## **Circuit Schematic**
**==> picture [176 x 127] intentionally omitted <==**
**----- Start of picture text -----**
panna 7 nena 5
3
2
1
6 1 4
**----- End of picture text -----**
## **Package Dimensions**
Dimensions in Millimeters
©2017 STARPOWER Semiconductor Ltd. 5/15/2017 8/9 Preliminary
GD2400SGY120C3S IGBT Module
## **Terms and Conditions of Usage**
The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application.
This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics.
Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify.
If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved.
©2017 STARPOWER Semiconductor Ltd. 5/15/2017 9/9 Preliminary
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- [Supplier page](https://es.farnell.com/starpower/gd2400sgy120c3s/igbt-module-1-2kv-3-353ka/dp/3912086)
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