# Silicon Carbide Schottky Diode, MPS Series, Single, 1.7 kV, 36 A, 124 nC, TO-247

![Product image](https://novapart.co/image/farnell:4218060/)

**URL**: https://novapart.co/products/GD15MPS17H/silicon-carbide-schottky-diode-mps-series-single
**SKU**: GD15MPS17H
**Manufacturer**: GENESIC
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €7.0600
**Stock**: 100+
**Lead Time**: 105 days (indicative)

## Description

Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (17-Dec-2015) |
| No. Of Pins | 2 Pin |
| Product Range | MPS Series |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-247 |
| Diode Configuration | Single |
| Average Forward Current | 36A |
| Total Capacitive Charge | 124nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 1.7kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4218060/)

**GD15MPS17H TM 1700V 15A SiC Schottky MPS™ Diode** 

**Silicon Carbide Schottky Diode VRRM = 1700 V IF (TC = 158°C) = 15 A QC = 124 nC** | 

- **Features** •  Gen4 Thin Chip Technology for Low VF •  Enhanced Surge and Avalanche Robustness •  Superior Figure of Merit QC/IF •  Low Thermal Resistance •  Low Reverse Leakage Current •  Temperature Independent Fast Switching •  Positive Temperature Coefficient of VF •  Low VF for High Temperature Operation 

- — **Advantages** 

- Improved System Efficiency 

- High System Reliability 

- Optimal Price Performance 

- Reduced Cooling Requirements 

- Increased System Power Density 

- Zero Reverse Recovery Current 

- Easy to Parallel without Thermal Runaway 

- Improved System Efficiency 

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Package<br>Case<br>RoHS<br>TO-247-2 K A REACH<br>**----- End of picture text -----**<br>


## **Applications** 

- EV Fast Chargers 

- Solar Inverters 

- Wind Energy Converters 

- Train Auxiliary Power Supplies 

- High Frequency Rectifiers 

- Switched Mode Power Supplies 

- Motor Drives 

- Pulsed Power 

## **Absolute Maximum Ratings** (At TC = 25°C Unless Otherwise Stated) 

|**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**Note**|
|---|
|Repetitive Peak Reverse Voltage<br>V<br>1700<br>V<br>RRM|
|Continuous Forward Current<br>I<br>T = 100°C, D = 1<br>36<br>A<br>Fig. 4<br>T = 135°C, D = 1<br>25<br>T = 158°C, D = 1<br>15<br>F<br>C<br>C<br>C|
|Non-Repetitive Peak Forward Surge Current, Half Sine<br>Wave<br>I<br>T = 25°C, t = 10 ms<br>150<br>A<br>T = 150°C, t = 10 ms<br>120<br>F,SM<br>C<br>P<br>C<br>P|
|Repetitive Peak Forward Surge Current, Half Sine Wave<br>I<br>T = 25°C, t = 10 ms<br>90<br>A<br>T = 150°C, t = 10 ms<br>63<br>F,RM<br>C<br>P<br>C<br>P|
|Non-Repetitive Peak Forward Surge Current<br>I<br>T = 25°C, t = 10 µs<br>750<br>A<br>F,MAX<br>C<br>P|
|i t Value<br>∫i dt<br>T = 25°C, t = 10 ms<br>112<br>A s<br>2<br>2<br>C<br>P<br>2|
|Non-Repetitive Avalanche Energy<br>E <br>L = 2.7 mH, I = 15 A<br>300<br>mJ<br>AS<br>AS|
|Diode Ruggedness<br>dV/dt<br>V = 0 ~ 1360 V<br>200<br>V/ns<br>R|
|Power Dissipation<br>P<br>T = 25°C<br>288<br>W<br>Fig. 3<br>TOT<br>C|
|Operating and Storage Temperature<br>T  , T<br>-55 to 175<br>°C<br>j<br>stg|



**Latest Version at: www.genesicsemi.com/sic-schottky-mps/GD15MPS17H/GD15MPS17H.pdf** 

**Page 1 of 7** 

**Rev 21/Jun** 

**GD15MPS17H 1700V 15A SiC Schottky MPS™ Diode** 

**TM** 

## **Electrical Characteristics** 

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Values<br>Parameter  Symbol  Conditions  Unit  Note<br>Min.  Typ.  Max.<br>I  = 15 A, T  = 25°C F j 1.5  1.8<br>Diode Forward Voltage  V  F V  Fig. 1<br>I  = 15 A, T  = 175°C F j 2.1<br>VR = 1700 V, T  = 25°C j 1  20<br>Reverse Current  IR µA  Fig. 2<br>VR = 1700 V, T  = 175°C j 10<br>VR = 600 V  85<br>Total Capacitive Charge  QC nC  Fig. 7<br>I  ≤ IF F,MAX VR = 1200 V  124<br>dI /dt = 200 A/µs F VR = 600 V<br>Switching Time  tS < 10  ns<br>VR = 1200 V<br>VR = 1 V, f = 1MHz  1082<br>Total Capacitance  C  pF  Fig. 6<br>VR = 1200 V, f = 1MHz  60<br>Thermal/Package Characteristics<br>Values<br>Parameter  Symbol  Conditions  Unit  Note<br>Min.  Typ.  Max.<br>Thermal Resistance, Junction - Case  RthJC 0.52  °C/W  Fig. 9<br>Weight  WT 6.0  g<br>Mounting Torque  TM Screws to Heatsink  1.1  Nm<br>**----- End of picture text -----**<br>


## **Thermal/Package Characteristics** 

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**Latest Version at: www.genesicsemi.com/sic-schottky-mps/GD15MPS17H/GD15MPS17H.pdf** 

**Page 2 of 7** 

**Rev 21/Jun** 

**GD15MPS17H 1700V 15A SiC Schottky MPS™ Diode** 

**TM** 

**Figure 1: Typical Forward Characteristics** 

**Figure 2: Typical Reverse Characteristics** 

IF = f(VF,T); tj P = 250 µs 

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IR = f(VR,T)j<br>**----- End of picture text -----**<br>


**Figure 3: Power Derating Curves** 

**Figure 4: Current Derating Curves (Typical VF)** 

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PTOT = f(TC); T = 175°C j IF = f(TC); D = tP/T; T ≤ 175°C; fj SW > 10kHz<br>**----- End of picture text -----**<br>


**Latest Version at: www.genesicsemi.com/sic-schottky-mps/GD15MPS17H/GD15MPS17H.pdf** 

**Page 3 of 7** 

**Rev 21/Jun** 

**GD15MPS17H 1700V 15A SiC Schottky MPS™ Diode** 

**TM** 

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Figure 5: Current Derating Curves (Maximum VF)<br>**----- End of picture text -----**<br>


IF = f(TC); D = tP/T; T ≤ 175°C; fj SW > 10kHz 

**Figure 7: Typical Capacitive Charge vs Reverse Voltage Characteristics** 

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QC = f(VR); f = 1MHz<br>**----- End of picture text -----**<br>


**Figure 6: Typical Junction Capacitance vs Reverse Voltage Characteristics** 

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C = f(VR); f = 1MHz<br>**----- End of picture text -----**<br>


**Figure 8: Typical Capacitive Energy vs Reverse Voltage Characteristics** 

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EC = f(VR); f = 1MHz<br>**----- End of picture text -----**<br>


**Latest Version at: www.genesicsemi.com/sic-schottky-mps/GD15MPS17H/GD15MPS17H.pdf** 

**Page 4 of 7** 

**Rev 21/Jun** 

**GD15MPS17H 1700V 15A SiC Schottky MPS™ Diode** 

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TM<br>**----- End of picture text -----**<br>


**Figure 9: Transient Thermal Impedance** 

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Zth,jc = f(tP,D); D = tP/T<br>**----- End of picture text -----**<br>


**Figure 10: Forward Curve Model** 

## **Forward Curve Model Equation:** 

IF = (VF - VBI)/RDIFF (A) eel **Built-In Voltage (VBI):** VBI(T) = j m × T + j n (V) m = -0.00126 (V/°C) n = 0.997 (V) 

**Differential Resistance (RDIFF):** 

~~1/RDIFF~~ RDIFF(T) = j a × Tj[2] + b × T + j c (Ω) a = 6.8e-07 (Ω/°C2) b = 0.000235 (Ω/°C) c = 0.0304 (Ω) VBI **Forward Power Loss Equation:** PLOSS = VBI(T) × Ij AVG + RDIFF(T) × Ij RMS[2] Forward Voltage, V¢ (V) IF = f(VF,T)j 

**Latest Version at: www.genesicsemi.com/sic-schottky-mps/GD15MPS17H/GD15MPS17H.pdf** 

**Page 5 of 7** 

**Rev 21/Jun** 

**GD15MPS17H 1700V 15A SiC Schottky MPS™ Diode** 

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## **Package Dimensions** 

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| TO-247-2 Package Outline<br>a 0.170 (4.32) 0.620 (15.75)0.635 (16.13) 0.190 (4.83)0.205 (5.21) — 0.530 (13.46)0.557 (14.16) 0.047<br>0.216 (5.49) (1.19)<br>0.085 (2.16) 0.059 (1.50)<br>0.108 (2.75) 0.098 (2.49)<br>eg 0.212 (5.39) 0.238 (6.04)<br>0.244 (6.20) 0.248 (6.30.)<br>0.819<br>0.831 0.640 (16.25)<br>(20.80) Ø 0.140 (3.56) 0.695 (17.65)<br>(21.10) Ø 0.144 (3.65)<br>Ø 0.283 (7.19) REF<br>0.161 (4.10)<br>0.173 (4.40)<br>Tor:<br>0.780<br>0.800<br>(19.81)<br>0.075 (1.91)<br>(20.32)<br>0.094 (2.39)<br>: | 7<br>0.022 (0.55)<br>0.044 (1.12)0.052 (1.33) 0.214 (5.44) BSC. 0.027 (0.69) 0.090 (2.29)<br>s_ 0.100 (2.55)<br>**----- End of picture text -----**<br>


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Se Recommended Solder Pad Layout =Ge Package View<br>Case (K)<br>0.120 (3.05)<br>‘ff a «<br>0.428 (10.88)<br>0.08 (2.03) A<br>K<br>**----- End of picture text -----**<br>


## **NOTE** 

1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 

2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS. 

**Latest Version at: www.genesicsemi.com/sic-schottky-mps/GD15MPS17H/GD15MPS17H.pdf** 

**Page 6 of 7** 

**Rev 21/Jun** 

**GD15MPS17H 1700V 15A SiC Schottky MPS™ Diode** 

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## **Compliance** 

## **RoHS Compliance** 

The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS 2), as adopted by EU member states on January 2, 2013 and amended on March 31, 2015 by EU Directive 2015/863. RoHS Declarations for this product can be obtained from your GeneSiC representative. 

## **REACH Compliance** 

REACH substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a GeneSiC representative to insure you get the most up-to-date REACH SVHC Declaration. REACH banned substance information (REACH Article 67) is also available upon request. 

## **Disclaimer** 

GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. 

Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. 

## **Related Links** 

- SPICE Models: https://www.genesicsemi.com/sic-schottky-mps/GD15MPS17H/GD15MPS17H_SPICE.zip 

- PLECS Models: https://www.genesicsemi.com/sic-schottky-mps/GD15MPS17H/GD15MPS17H_PLECS.zip 

- CAD Models: https://www.genesicsemi.com/sic-schottky-mps/GD15MPS17H/GD15MPS17H_3D.zip 

- Evaluation Boards: https://www.genesicsemi.com/technical-support 

- Reliability: https://www.genesicsemi.com/reliability 

- Compliance: https://www.genesicsemi.com/compliance 

- Quality Manual: https://www.genesicsemi.com/quality 

## **Revision History** 

- Rev 21/Jun: Updated with most recent data 

- Supersedes: Rev 21/Mar 

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## **www.genesicsemi.com/sic-schottky-mps/** 

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**Rev 21/Jun Copyright© 2021 GeneSiC Semiconductor Inc. All Rights Reserved.** 

**Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155, Dulles, VA 20166; USA Page 7 of 7** 



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