# IGBT Module, Half Bridge, 2.342 kA, 1.95 V, 9.37 kW, 150 °C, Module
**URL**: https://novapart.co/products/GD1400HFX170P2S/igbt-module-half-bridge-2342-ka-195-v-937-kw-150-c
**SKU**: GD1400HFX170P2S
**Manufacturer**: STARPOWER
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €528.4700
**Stock**: 10+
**Lead Time**: 162 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| Product Range | - |
| Igbt Technology | Trench Field Stop |
| Igbt Termination | Stud |
| Power Dissipation | 9.37kW |
| Igbt Configuration | Half Bridge |
| Transistor Mounting | Panel |
| Dc Collector Current | 2.342kA |
| Power Dissipation Pd | 9.37kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 2.342kA |
| Collector Emitter Voltage Max | 1.7kV |
| Collector Emitter Voltage V(Br)Ceo | 1.7kV |
| Collector Emitter Saturation Voltage | 1.95V |
| Collector Emitter Saturation Voltage Vce(On) | 1.95V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3549224/)
GD1400HFX170P2S IGBT Module
## **STARPOWER**
##
## **IGBT**
## **GD1400HFX170P2S**
**1700V/1400A 2 in one-package**
## **General Description**
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as wind and solar power.
## **Features**
- Low VCE(sat) Trench IGBT technology
- 10μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175[o] C
- Enlarged Diode for regenerative operation
- Isolated copper baseplate using DBC technology
- High power and thermal cycling capability
## **Typical Applications**
- Auxiliary Inverters
- High Power Converters
- Wind Power
- Traction Drives
## **Equivalent Circuit Schematic**
©2019 STARPOWER Semiconductor Ltd. 1/10/2019 1/10 preliminary
GD1400HFX170P2S IGBT Module
## **Absolute Maximum Ratings** TC=25[o] C unless otherwise noted
## **IGBT**
|**IGBT**||||
|---|---|---|---|
|**Symbol**|**Description**|**Value**|**Unit**|
|VCES|Collector-EmitterVoltage|1700|V|
|VGES|Gate-Emitter Voltage|±20|V|
|IC|Collector Current @ TC=25~~o~~C
@ TC=100oC|2342
1400|A|
|ICM|PulsedCollectorCurrent tp=1ms|2800|A|
|PD|Maximum Power Dissipation @ Tj=175~~o~~C|9.37|kW|
|**Diode**||||
|**Symbol**|**Description**|**Value**|**Unit**|
|VRRM|Repetitive Peak ReverseVoltage|1700|V|
|IF|Diode Continuous Forward Current|1400|A|
|IFM|Diode Maximum ForwardCurrent tp=1ms|2800|A|
## **Module**
|**Module**||||
|---|---|---|---|
|**Symbol**|**Description**|**Value**|**Unit**|
|Tjmax|Maximum Junction Temperature|175|~~o~~C|
|Tjop|Operating Junction Temperature|-40to +150|~~o~~C|
|TSTG|Storage Temperature Range|-40 to +150|~~o~~C|
|VISO|Isolation Voltage RMS,f=50Hz,t=1min|4000|V|
©2019 STARPOWER Semiconductor Ltd. 1/10/2019 2/10 preliminary
GD1400HFX170P2S IGBT Module
**IGBT Characteristics** TC=25[o] C unless otherwise noted
|**IGBT**|**Characteristics**TC|=25oC unless otherwise n|oted||||
|---|---|---|---|---|---|---|
|**Symbol **|**Parameter **|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|VCE(sat)|Collector to Emitter
Saturation Voltage|IC=1400A,VGE=15V,
Tj=25oC||1.95|2.40|V|
|||IC=1400A,VGE=15V,
Tj=125oC||2.40|||
|||IC=1400A,VGE=15V,
Tj=150oC||2.50|||
|VGE(th)|Gate-Emitter Threshold
Voltage|IC=56.0mA,VCE=VGE,
Tj=25oC|5.6|6.2|6.8|V|
|ICES|Collector Cut-Off
Current|VCE=VCES,VGE=0V,
Tj=25oC|||5.0|mA|
|IGES|Gate-Emitter Leakage
Current|VGE=VGES,VCE=0V,
Tj=25oC|||400|nA|
|RGint|InternalGate Resistance|||1.6||Ω|
|Cies|Input Capacitance|VCE=25V,f=1MHz,
VGE=0V||169||nF|
|Cres|Reverse Transfer
Capacitance|||4.09||nF|
|QG|GateCharge|VGE=-15…+15V||13.2||μC|
|td(on)|Turn-On DelayTime|VCC=900V,IC=1400A,
RG=0.47Ω,
RGoff=0.68Ω,
VGE=±15V,
Tj=25oC||714||ns|
|tr|Rise Time|||99||ns|
|td(off)|Turn-Off DelayTime|||929||ns|
|tf|Fall Time|||250||ns|
|Eon|Turn-On Switching
Loss|||281||mJ|
|Eoff|Turn-Off Switching
Loss|||264||mJ|
|td(on)|Turn-On DelayTime|VCC=900V,IC=1400A,
RG=0.47Ω,
RGoff=0.68Ω,
VGE=±15V,
Tj=125oC||748||ns|
|tr|Rise Time|||109||ns|
|td(off)|Turn-Off DelayTime|||1037||ns|
|tf|Fall Time|||353||ns|
|Eon|Turn-On Switching
Loss|||443||mJ|
|Eoff|Turn-Off Switching
Loss|||462||mJ|
|td(on)|Turn-On DelayTime|VCC=900V,IC=1400A,
RG=0.47Ω,
RGoff=0.68Ω,
VGE=±15V,
Tj=150oC||757||ns|
|tr|Rise Time|||112||ns|
|td(off)|Turn-Off DelayTime|||1064||ns|
|tf|Fall Time|||379||ns|
|Eon|Turn-On Switching
Loss|||483||mJ|
|Eoff|Turn-Off Switching
Loss|||512||mJ|
|ISC|SC Data|tP≤10μs,VGE=15V,
Tj=150oC,VCC=1000V,
VCEM≤1700V||5600||A|
©2019 STARPOWER Semiconductor Ltd. 1/10/2019 3/10 preliminary
GD1400HFX170P2S IGBT Module
**Diode Characteristics** TC=25[o] C unless otherwise noted
|**Symbol **|**Parameter **|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VF|Diode Forward
Voltage|IF=1400A,VGE=0V,Tj=25~~o~~C||1.80|2.25|V|
|||IF=1400A,VGE=0V,Tj=125~~o~~C||1.90|||
|||IF=1400A,VGE=0V,Tj=150~~o~~C||1.95|||
|Qr|Recovered Charge|VR=900V,IF=1400A,
-di/dt=11500A/μs,VGE=-15V
Tj=25oC||380||μC|
|IRM|Peak Reverse
RecoveryCurrent|||1650||A|
|Erec|Reverse Recovery
Energy|||224||mJ|
|Qr|RecoveredCharge|VR=900V,IF=1400A,
-di/dt=11500A/μs,VGE=-15V
Tj=125oC||644||μC|
|IRM|Peak Reverse
Recovery Current|||1650||A|
|Erec|Reverse Recovery
Energy|||405||mJ|
|Qr|RecoveredCharge|VR=900V,IF=1400A,
-di/dt=11500A/μs,VGE=-15V
Tj=150oC||715||μC|
|IRM|Peak Reverse
Recovery Current|||1700||A|
|Erec|Reverse Recovery
Energy|||462||mJ|
**NTC Characteristics** TC=25[o] C unless otherwise noted
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|R25|Rated Resistance|||5.0||kΩ|
|∆R/R|Deviation of R100|TC=100~~o~~C,R100=493.3Ω|-5||5|%|
|P25|Power
Dissipation||||20.0|mW|
|B25/50|B-value|R2=R25exp[B25/50(1/T2-
1/(298.15K))]||3375||K|
|B25/80|B-value|R2=R25exp[B25/80(1/T2-
1/(298.15K))]||3411||K|
|B25/100|B-value|R2=R25exp[B25/100(1/T2-
1/(298.15K))]||3433||K|
©2019 STARPOWER Semiconductor Ltd. 1/10/2019 4/10 preliminary
GD1400HFX170P2S IGBT Module
## **Module Characteristics** TC=25[o] C unless otherwise noted
|**Symbol **|**Parameter **|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|
|LCE|StrayInductance||10||nH|
|RCC’+EE’|Module Lead Resistance,Terminal to Chip||0.20||mΩ|
|RthJC|Junction-to-Case (per IGBT)
Junction-to-Case(per Diode)|||16.0
35.7|K/kW|
|RthCH|Case-to-Heatsink (per IGBT)
Case-to-Heatsink (per Diode)
Case-to-Heatsink(per Module)||8.7
19.4
3.0||K/kW|
|M|Terminal Connection Torque, Screw M4
Terminal Connection Torque, Screw M8
MountingTorque, ScrewM5|1.8
8.0
3.0||2.1
10.0
6.0|N.m|
|G|Weight of Module||1200||g|
©2019 STARPOWER Semiconductor Ltd. 1/10/2019 5/10 preliminary
GD1400HFX170P2S IGBT Module
**==> picture [513 x 657] intentionally omitted <==**
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2800 2800
2400 VGE=15V 2400 VCE=20V
2000 2000
1600 1600
1200 1200
800 800
400 Tj=25℃ 400 Tj=25℃
Tj=125℃ Tj=125℃
Tj=150℃ Tj=150℃
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 6 7 8 9 10 11 12 13
VCE [V] VGE [V]
Fig 1. IGBT Output Characteristics Fig 2. IGBT Transfer Characteristics
1,800 2,000
Eon Tj=125℃ Eon Tj=125℃
Eoff Tj=125℃ Eoff Tj=125℃
1,500 Eon Tj=150℃ Eon Tj=150℃
1,600
Eoff Tj=150℃ Eoff Tj=150℃
1,200 VCC=900V
RGon=0.47Ω 1,200
RGoff=0.68Ω
900 VGE= ± 15V
800
600
400
300 VCC=900V
IC=1400A
VGE= ± 15V
0 0
0 700 1400 2100 2800 0 1 2 3 4 5 6 7
IC [A] RG [Ω]
[A] [A]
C C
I I
E [mJ] E [mJ]
**----- End of picture text -----**
Fig 3. IGBT Switching Loss vs. IC Fig 4. IGBT Switching Loss vs. RG
©2019 STARPOWER Semiconductor Ltd. 1/10/2019 6/10 preliminary
GD1400HFX170P2S IGBT Module
**==> picture [513 x 680] intentionally omitted <==**
**----- Start of picture text -----**
3000 100
Module
2500
IGBT
2000
1500 10
1000
RGoff=0.68Ω
i: 1 2 3 4
500 VGE= ± 15V ri[K/kW]: 1.0 11.7 2.3 1.0
T =150 [o] C τi[s]: 0.001 0.03 0.1 1.1
j
0 1
0 300 600 900 1200 1500 1800 0.001 0.01 0.1 1 10
VCE [V] t [s]
Fig 5. RBSOA Fig 6. IGBT Transient Thermal Impedance
2800 600
Tj=25℃ Erec Tj=125℃
Tj=125℃
2400 Erec Tj=150℃
Tj=150℃ 500
2000
400
1600
300
1200
200
800
VCC=900V
100 RGon=0.47Ω
400 VGE=-15V
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 700 1400 2100 2800
VF [V] IF [A]
Fig 7. Diode Forward Characteristics Fig 8. Diode Switching Loss vs. IF
[A]
C [K/kW]
I thJC
Z
[A]
F
I E [mJ]
**----- End of picture text -----**
©2019 STARPOWER Semiconductor Ltd. 1/10/2019 7/10 preliminary
GD1400HFX170P2S IGBT Module
**==> picture [513 x 314] intentionally omitted <==**
**----- Start of picture text -----**
500 100
Erec Tj=125℃
Erec Tj=150℃
Diode
450
400
350 10
300
250 VCC=900V ri: 1 2 3 4 i[K/kW]: 2.2 3.0 28.6 1.9
IF=1400A τi[s]: 0.003 0.005 0.04 1
VGE=-15V
200 1
0 1 2 3 4 5 0.001 0.01 0.1 1 10
RG [Ω] t [s]
[K/kW]
E [mJ]
thJC
Z
**----- End of picture text -----**
Fig 9. Diode Switching Loss vs. RG Fig 10. Diode Transient Thermal Impedance
**==> picture [257 x 337] intentionally omitted <==**
**----- Start of picture text -----**
100
10
1
0.1
0 30 60 90 120 150
TC [ [o] C]
Fig 11. NTC Temperature Characteristic
R [kΩ]
**----- End of picture text -----**
©2019 STARPOWER Semiconductor Ltd. 1/10/2019 8/10 preliminary
GD1400HFX170P2S IGBT Module
## **Circuit Schematic**
**==> picture [96 x 135] intentionally omitted <==**
**----- Start of picture text -----**
9/11
5
4
6
3
8
7
1
2
10/12
**----- End of picture text -----**
## **Package Dimensions**
**==> picture [276 x 9] intentionally omitted <==**
**----- Start of picture text -----**
Dimensions in Millimeters
**----- End of picture text -----**
©2019 STARPOWER Semiconductor Ltd. 1/10/2019 9/10 preliminary
GD1400HFX170P2S IGBT Module
## **Terms and Conditions of Usage**
The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application.
This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics.
Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify.
If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved.
©2019 STARPOWER Semiconductor Ltd. 1/10/2019 10/10 preliminary
## Links
- [View this product on Novapart](https://novapart.co/products/GD1400HFX170P2S/igbt-module-half-bridge-2342-ka-195-v-937-kw-150-c)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/starpower/gd1400hfx170p2s/transistor-igbt-module-1-7kv-2/dp/3549224)
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