# IGBT Module, Single, 1.2 kA, 1.85 V, 150 °C, Module
**URL**: https://novapart.co/products/GD1200SGX170C3SN/igbt-module-single-12-ka-185-v-150-c
**SKU**: GD1200SGX170C3SN
**Manufacturer**: STARPOWER
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €277.0400
**Stock**: 10+
**Lead Time**: 162 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| Product Range | - |
| Igbt Technology | Trench |
| Igbt Termination | Stud |
| Power Dissipation | - |
| Igbt Configuration | Single |
| Transistor Mounting | Panel |
| Dc Collector Current | 1.2kA |
| Power Dissipation Pd | - |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 1.2kA |
| Collector Emitter Voltage Max | 1.7kV |
| Collector Emitter Voltage V(Br)Ceo | 1.7kV |
| Collector Emitter Saturation Voltage | 1.85V |
| Collector Emitter Saturation Voltage Vce(On) | 1.85V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3912083/)
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## Power Modules 2019/2020
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· IGBT MODULES
· SiC MODULES
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## About StarPower
StarPower Semiconductor Ltd. is a leading power module company located in Jiaxing China about 59 miles southwest of Shanghai. Founded in 2005, StarPower designs and manufactures \ IGBT/SiC/MOSFET/IPM/FRD/Rectifier modules and customized an | ee LC modules for applications in the area of inverters, welding ZI | machines, inductive heating , UPS, EV/HEV, solar/wind power and etc. in the power range of 0.5kW up to more than 1MW.
aL. Through heavy investment in R&Ds, we offer a broad range of 7 7 ii | i a ts quality and eco-friendly products and services to our customers. -| | gf _ = - i | Ee We are committed to excellence in all things we do. The company — ; S y , | | has one of the best production lines and well-trained workforce "ee)| in the industry. Our mission is to create the most value for the ee > : i - success of our customers around the globe. qi
For more information, please go to our website at **www. powersemi.com** or call our sales hotline at **+86 573 82585700** (China); or go to our StarPower Europe website at **www.starpowereurope. com** , or call **+41 91 8504141** (Europe).
STARPOWER SEMICONDUCTOR LTD.
2019/2020
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04
Low Power Modules
L1/L2/L3/L4 Package Series
650V NPC1 12
650V 3 Phase Bridge 12
650V 3 Phase Bridge with NT C 12
650V PIM 12
1200V 3 Phase Bri dge with NTC 13
1200V PIM 13
F1/F2/F3/F4/F5 Package Series
650V NPC1 Boost 14
650V NPC1 14
650V PIM 14
1200V NPC2 15
1200V PIM 15
C5/C6 Package Series
650V 3 Phase Bridge with NTC 16
650V PIM 16
1200V H Bridge 16
1200V 3 Phase Bridge with NTC 17
1200V PIM 17
1700V 3 Phase Bri dge with NTC 18
1700V PIM 18
Low Power Module Package Outlines 19
Medium Power Modules
C1 / C2 / C8 Pack age Series
650V Boost Chopper 27
650V Buck Chopper 27
650V Half Bridge 27
1200V Single 28
1200V Boost Chopper 28
1200V Buck Chopper 28
1200V Half Br id ge 29
1200V H Bri dg e 30
1700V Single 31
1700V Half Bridge 31
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## C6.1 / P3 / P4 Package Series
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|||
|---|---|
|650V Half Bridge|32|
|650V Half NPC1 Up|32|
|650V Half NPC1 Low|32|
|650V 3 Phase Bridge with NTC|32|
|650V Tri-Pack|32|
|1200V Half Bridge|33|
|1200V Half NPC1 Up|33|
|1200V Half NPC1 Low|33|
|1200V Tri-Pack|33|
|1700V Half Bridge|34|
|Medium Power Module Package Outlines|35|
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## **High Power Modules**
C3 / C4 / P1 / P2 Package Series
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|||
|---|---|
|1200V Single|38|
|1200V Half Bridge with NTC|38|
|1200V Half Bridge|38|
|1700V Single|38|
|1700V Half Bridge with NTC|39|
|1700V Half Bridge|39|
|High Power Module Package Outlines|40|
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## **SiC Mosfet Modules**
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||||
|---|---|---|
|C2/B3 Package Series|
|SiC Mosfet|42|
|SiC|Mosfet Module Package Outlines|43|
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STARPOWER SEMICONDUCTOR LTD. ~~a~~ ower Mo dules 2019/2020
## Low Power Modules
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IC（A） VCES IC
we
ttSd wy| ;
L1 : PIM
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L2 : 3 phase bridge/PIM
Tulad
C-
L3 : 3 phase bridge/PIM/NPC
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L4 : 3 phase bridge
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F1 : PIM/NPC/Boost
F2 : PIM/NPC
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Low Power Modules .
aN AS DES TeHOICEN
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VCES
IC
F3 : PIM
F4 : PIM
F5 : PIM
C5 : H bridge/3 phase bridge/PIM
C6 : H bridge/3 phase bridge/PIM
STARPOWER SEMICONDUCTOR LTD.
2019/2020
## Medium Power Modules
||||VCES|VCES||||IC|
|---|---|---|---|---|---|---|---|---|
||||||||50 100 150 200|50 100 150 200 400 600 800 900|
|eS|||||||||
|C1：chopper/half bridge|||||||||
C2.0 ： chopper/half bridge
C2.1 ： single CF C8.0 ： half bridge
C8.1 ： half bridge
## Medium Power Modules
VCES IC 600 650 1200 1700 50 100 150 200 400 600 800 900
C8.2 ： H bridge
C6.1 black ： half bridge/half NPC
C6.1 white ： half bridge
P3 ： 3 phase bridge
P4 ： Tri-Pack
STARPOWER SEMICONDUCTOR LTD.
2019/2020
## High Power Modules
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|||||||
|---|---|---|---|---|---|
|VCES|IC|
|1200|1700|3300|400 600 900 1000 1400 Outline/page|2400|3600|
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||||
|---|---|---|
|C3.0|：|single|
|Ne|
|C3.1|：|half bridge|
|2|
|C3.2|：|single|
|ee|
|Se|
|sor|
|C4.0|：|single|
|.|
|f|
|.so|
|at|
|P1|：|half bridge|
|=>|
|P2|：|half bridge|
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A
SiC Mosfet Modules
Se SOUR LEST CHOICE VE
VDSS ID
1200 1700 50 120 200 400 600
SS
C2 : half bridge
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B3 : half bridge
STARPOWER SEMICONDUCTOR LTD.
2019/2020
## IGBT Module Nomenclature
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GD =IGBT Modules
Nominal Current
IC(@TC=80 ) as e.g. 200=200A
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F
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65
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Voltage/10 e.g. 65=650V
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(N,F)*
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## **Screening Level**
S=Screened for Industrial Applications H=Screened for High Reliability Applications
## **Circuit Configuration**
SG=Single CU=Chopper Diode Up Side CL=Chopper Diode Low Side HF=Half Bridge HT=Tri-Pack HH=H Bridge HC=Internal Connected H Bridge ML=3 Level,Diode Clampling,NPC1 MP=Upper Half of NPC1 3 Level MN=Lower Half of NPC1 3 Level TL=3 Level,IGBT Active Clampling,NPC2 TU=NPC1 Boost FF=3 Phase Bridge FS=3 Phase Open Emitter Output PI=3 Phase Rectifier+Brake+3 Phase Output PJ=3 Phase Rectifier+Brake+3 Phase Open Emitter Output PF=3 Phase Rectifier+H Bridge Output
## **Die Characteristics**
K=NPT Low Loss U=NPT Ultra Fast IGBT L=SPT+ Low Loss and Fast IGBT X=Trench FS IGBT,Low Loss Y=Advanced Trench FS IGBT,Low Loss F=Advanced Trench FS Ultra Fast IGBT Without Short-circuit Capacity Q=Advanced Trench FS Fast IGBT
## **Package Type**
C1=94mmx34mmx30mm,Cu Base C2=106mmx62mmx30mm,Cu Base C3=140mmx130mmx38mm,Cu Base C4=190mmx140mmx38mm,Cu Base C5=107mmx45mmx17mm,Cu Base C6=122mmx62mmx17mm,Cu Base C8=94mmx48mmx29mm,Cu Base F1=68.4mmx32.5mmx15.65mm,DBC Base F2=82mmx37.4mmx16.23mm,DBC Base F3=66mmx32.5mmx21.2mm,DBC Base F4=68.4mmx32.5mmx21.15mm,DBC Base F5=82mmx37.4mmx21.25mm,DBC Base L1=40mmx56mmx20.5mm,DBC Base L2=34mmx48mmx15.5mm,DBC Base L3=48mmx57mmx15.5mm,DBC Base L4=26mmx36mmx15.5mm,DBC Base P1=172mmx89mmx38mm,Cu Base P2=250mmx89mmx38mm,Cu Base P3=113mmx140mmx17mm,Cu Base P4=100mmx216mmx28.4mm,Cu Base
*N=New Pins Layout F=PressFIT Pins
## SiC Mosfet Module Nomenclature
MD 300 HF R 120 C2 S **MD =SiC Mosfet Modules**
**Nominal Current** ID(@TC=80℃ ) as e.g. 300=300A
**Circuit Configuration** HF=Half Bridge
**Die Characteristics** R=SiC Mosfet
**Voltage/10 e.g. 120=1200V**
## **Package Type**
C2=106mmx62mmx30mm,Cu Base B3=108mmx62mmx17mm,Cu Base
## **Screening Level**
S=Screened for Industrial Applications H=Screened for High Reliability Applications
STARPOWER SEMICONDUCTOR LTD.
2019/2020
## Low Power Modules
||||
|---|---|---|
|Type
VCES
V
IC
A
VCE(sat)
@Tj=25℃typ.
V
(Eon+Eoff)
@Tj=125℃typ.
mJ
Rth(J-C)
K/W
Package
Outline/page||Circuit|
||||
|**Trench FS IGBT,Low Loss**
**Trench FS IGBT,Low Loss**
**Trench FS IGBT,Low Loss**
**Trench FS IGBT,Low Loss**
GD75MLX65L3S
650
75
1.45 2.32 0.514 L3.1/20
GD100MLX65L3S
650
100
1.45 3.36 0.384 L3.1/20
GD150MLX65L3S
650
150
1.45 5.48 0.269 L3.1/20
GD75MLX65L3SF
650
75
1.45 2.32 0.514 L3.3/21
GD100MLX65L3SF
650
100
1.45 3.36 0.384 L3.3/21
GD150MLX65L3SF
650
150
1.45 5.48 0.269 L3.3/21
GD10FSX65L4S
650
10
1.45 0.44 3.132 L4.0/21
GD15FSX65L4S
650
15
1.45 0.67 2.344 L4.0/21
GD20FSX65L4S
650
20
1.45 0.99 2.063 L4.0/21
GD30FSX65L4S
650
30
1.45 1.04 1.289 L4.0/21
GD20FSX65L2S
650
20
1.45 0.99 1.955 L2.1/19
GD30FSX65L2S
650
30
1.45 1.04 1.222 L2.1/19
GD50FSX65L2S
650
50
1.45 1.74 0.745 L2.1/19
GD20FSX65L2SF
650
20
1.45 0.99 1.955 L2.6/20
GD30FSX65L2SF
650
30
1.45 1.04 1.222 L2.6/20
GD50FSX65L2SF
650
50
1.45 1.74 0.745 L2.6/20
GD10PJX65L2S
650
10
1.45 0.44 2.968 L2.2/19
GD15PJX65L2S
650
15
1.45 0.67 2.221 L2.2/19
GD20PJX65L2S
650
20
1.45 0.99 1.955 L2.2/19
GD30PJX65L2S
650
30
1.45 1.04 1.222 L2.2/19
GD50PJX65L3S
650
50
1.45 1.74 0.745 L3.0/20
GD10PJX65L2SF
650
10
1.45 0.44 2.968 L2.5/19
GD15PJX65L2SF
650
15
1.45 0.67 2.221 L2.5/19
GD20PJX65L2SF
650
20
1.45 0.99 1.955 L2.5/19
GD30PJX65L2SF
650
30
1.45 1.04 1.222 L2.5/19
GD50PJX65L3SF
650
50
1.45 1.74 0.745 L3.5/21
650V NPC1
650V 3 Phase Bridge
650V 3 Phase Bridge with NTC
650V PIM|||
||||
||||
||||
||||
||||
||||
||||
||||
||||
## Low Power Modules
VCES IC VCE(sat) (Eon+Eoff) Rth(J-C) Package Type V A @Tj=25℃ typ. @Tj=125℃ typ. K/W Outline/page Circuit V mJ
ee 1200V 3 Phase Bridge with NTC **Advanced Trench FS IGBT,Low Loss** GD25FSY120L2S 1200 25 1.70 4.78 0.710 L2.1/19 GD35FSY120L2S 1200 35 1.70 6.09 0.552 L2.1/19 ~~i~~ ke ~~ee~~ GD50FSY120L3S 1200 50 1.70 12.67 0.449 L3.2/20 G ~~k bk J~~ GD75FSY120L3S 1200 75 1.70 14.40 0.292 L3.2/20 e 1200V PIM ~~e~~
|**Advanced Trench FS IGBT,Low Loss**|**Advanced Trench FS IGBT,Low Loss**|**Advanced Trench FS IGBT,Low Loss**||
|---|---|---|---|
|GD10PJY120L2S|1200|10
1.70 2.27 1.200 L2.2/19|1.70 2.27 1.200 L2.2/19|
|GD15PJY120L2S|1200|15
1.70 3.11 1.020 L2.2/19|1.70 3.11 1.020 L2.2/19|
|**NPT Low Loss**
GD25PJY120L3S
GD35PJY120L3S|1200
1200|25
1.70 4.78 0.710 L3.0/20
35
1.70 6.09 0.552 L3.0/20|1.70 4.78 0.710 L3.0/20
1.70 6.09 0.552 L3.0/20|
|GD10PJK120L1S
GD15PJK120L1S|1200
1200|10
2.20 1.91 1.600 L1.2/19
15
2.20 2.95 1.180 L1.2/19|2.20 1.91 1.600 L1.2/19
2.20 2.95 1.180 L1.2/19|
|GD10PJK120L2S|1200|10
2.20 1.91 1.200 L2.2/19|2.20 1.91 1.200 L2.2/19|
STARPOWER SEMICONDUCTOR LTD.
2019/2020
## Low Power Modules
|||
|---|---|
|Type
VCES
V
IC
A
VCE(sat)
@Tj=25℃typ.
V
(Eon+Eoff)
@Tj=125℃typ.
mJ
Rth(J-C)
K/W
Package
Outline/page
Ci|rcuit|
|||
|**Trench FS IGBT,Low Loss**
**Trench FS IGBT,Low Loss**
**Trench FS IGBT,Low Loss**
GD30TUX65F1S
650
30
1.45 1.04 1.400 F1.3/22
GD50TUX65F1S
650
50
1.45 1.74 0.854 F1.3/22
GD75TUX65F1S
650
75
1.45 2.32 0.589 F1.3/22
GD30MLX65F1S
650
30
1.45 1.04 1.400 F1.2/22
GD50MLX65F1S
650
50
1.45 1.74 0.854 F1.2/22
GD75MLX65F1S
650
75
1.45 2.32 0.589 F1.2/22
GD30MLX65F1SF
650
30
1.45 1.04 1.400 F1.4/22
GD75MLX65F1SF
650
75
1.45 2.32 0.589 F1.4/22
GD10PJX65F1S
650
10
1.45 0.44 3.402 F1.1/21
GD15PJX65F1S
650
15
1.45 0.67 2.546 F1.1/21
GD20PJX65F1S
650
20
1.45 0.99 2.241 F1.1/21
GD30PJX65F1S
650
30
1.45 1.04 1.400 F1.1/21
GD30PJX65F2S
650
30
1.45 1.04 1.400 F2.0/22
GD50PJX65F2S
650
50
1.45 1.74 0.854 F2.0/22
GD75PJX65F2S
650
75
1.45 2.32 0.589 F2.0/22
GD10PJX65F3S
650
10
1.45 0.44 3.402 F3.0/23
GD15PJX65F3S
650
15
1.45 0.67 2.546 F3.0/23
GD20PJX65F3S
650
20
1.45 0.99 2.241 F3.0/23
GD30PJX65F3S
650
30
1.45 1.04 1.400 F3.0/23
GD10PJX65F4S
650
10
1.45 0.44 3.402 F4.1/23
GD15PJX65F4S
650
15
1.45 0.67 2.546 F4.1/23
GD20PJX65F4S
650
20
1.45 0.99 2.241 F4.1/23
GD30PJX65F4S
650
30
1.45 1.04 1.400 F4.1/23
GD30PJX65F5S
650
30
1.45 1.04 1.400 F5.1/23
GD50PJX65F5S
650
50
1.45 1.74 0.854 F5.1/23
GD75PJX65F5S
650
75
1.45 2.32 0.589 F5.1/23
650V NPC1 Boost
650V NPC1
650V PIM||
## Low Power Modules
VCES IC VCE(sat) (Eon+Eoff) Rth(J-C) Package Type V A @Tj=25℃ typ. @Tj=125℃ typ. K/W Outline/page Circuit V mJ
|1200V NPC2
ee|1200V NPC2
ee|1200V NPC2
ee|1200V NPC2
ee|1200V NPC2
ee|1200V NPC2
ee|1200V NPC2
ee|1200V NPC2
ee|1200V NPC2
ee|1200V NPC2
ee|1200V NPC2
ee|1200V NPC2
ee|1200V NPC2
ee|1200V NPC2
ee|1200V NPC2
ee|1200V NPC2
ee|1200V NPC2
ee|1200V NPC2
ee|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Advanced Trench FS Fast IGBT**||**Advanced Trench FS Fast IGBT**||||||||||||||||
|GD40TLQ120F1S|1200|40|2.00 1.57 0.572 F1.2/22|||||||||||||||
|GD80TLQ120F1S|1200|80|2.00 3.14 0.286 F1.2/22|||||||~~ol~~||||||||
|||||||||||||||||||
|GD40TLQ120F1SF|1200|40|2.00 1.57 0.572 F1.4/22||7|||||||||~~a~~||||
|GD80TLQ120F1SF|1200|80|2.00 3.14 0.286 F1.4/22|||||||||||||||
|1200V PIM
e~~e~~|1200V PIM
e~~e~~|1200V PIM
e~~e~~|1200V PIM
e~~e~~|1200V PIM
e~~e~~|1200V PIM
e~~e~~|1200V PIM
e~~e~~|1200V PIM
e~~e~~|1200V PIM
e~~e~~|1200V PIM
e~~e~~|1200V PIM
e~~e~~|1200V PIM
e~~e~~|1200V PIM
e~~e~~|1200V PIM
e~~e~~|1200V PIM
e~~e~~|1200V PIM
e~~e~~|1200V PIM
e~~e~~|1200V PIM
e~~e~~|1200V PIM
e~~e~~|1200V PIM
e~~e~~|1200V PIM
e~~e~~|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Advanced Trench FS IGBT,Low Loss**|**Advanced Trench FS IGBT,Low Loss**||||||||||||||||||||
|GD10PJY120F1S|1200|10
1.70 2.27 1.340 F1.1/21|1.70 2.27 1.340 F1.1/21||||||||||||||||||
|GD15PJY120F1S|1200|15
1.70 3.11 1.165 F1.1/21|1.70 3.11 1.165 F1.1/21||||||||||||||||||
|GD15PJY120F2S|1200|15
1.70 3.11 1.165 F2.0/22|1.70 3.11 1.165 F2.0/22||||||||||||||||||
|GD25PJY120F2S|1200|25
1.70 4.78 0.794 F2.0/22|1.70 4.78 0.794 F2.0/22||||||||||||||||||
|GD35PJY120F2S|1200|35
1.70 6.09 0.633 F2.0/22|1.70 6.09 0.633 F2.0/22||||||||||||||||||
|GD50PJY120F2S|1200|50
1.70 12.67 0.515 F2.0/22|1.70 12.67 0.515 F2.0/22||||||||||||||||||
|GD10PJY120F3S|1200|10
1.70 2.27 1.340 F3.0/23|1.70 2.27 1.340 F3.0/23||||||||||||||||||
|GD15PJY120F3S|1200|15
1.70 3.11 1.165 F3.0/23|1.70 3.11 1.165 F3.0/23||||||||||||||||||
|GD10PJY120F4S
GD15PJY120F4S
GD15PJY120F5S|1200
1200
1200|10
1.70 2.27 1.340 F4.1/23
15
1.70 3.11 1.165 F4.1/23
15
1.70 3.11 1.165 F5.1/23|1.70 2.27 1.340 F4.1/23
1.70 3.11 1.165 F4.1/23
1.70 3.11 1.165 F5.1/23|~~qe~~|~~qe~~|~~qe~~|~~qe~~|a~~te~~
~~Is~~
~~J~~
~~qea~~
~~AK~~
~~ss~~
~~es~~ ~~J~~|||||||||||~~qea~~|~~qea~~|
|GD25PJY120F5S|1200|25
1.70 4.78 0.794 F5.1/23|1.70 4.78 0.794 F5.1/23||||||||||||||||||
|GD35PJY120F5S|1200|35
1.70 6.09 0.633 F5.1/23|1.70 6.09 0.633 F5.1/23||||||||||||||||||
|**NPT Low Loss**|||||||||||||||||||||
|GD10PJK120F1S|1200|10 2.20 1.91 1.340 F1.1/21|10 2.20 1.91 1.340 F1.1/21||||||||||||||||||
|GD15PJK120F2S|1200|15
2.20 2.95 0.984 F2.0/22|2.20 2.95 0.984 F2.0/22||||||||||||||||||
|GD10PJK120F3S|1200|10
2.20 1.91 1.340 F3.0/23|2.20 1.91 1.340 F3.0/23||||||||||||||||||
|GD10PJK120F4S|1200|10
2.20 1.91 1.340 F4.1/23|2.20 1.91 1.340 F4.1/23||||||||||||||||||
|GD15PJK120F5S|1200|15
2.20 2.95 0.984 F5.1/23|2.20 2.95 0.984 F5.1/23||||||||||||||||||
STARPOWER SEMICONDUCTOR LTD.
2019/2020
## Low Power Modules
|||
|---|---|
|Type
VCES
V
IC
A
VCE(sat)
@Tj=25℃typ.
V
(Eon+Eoff)
@Tj=125℃typ.
mJ
Rth(J-C)
K/W
Package
Outline/page|Circuit|
|||
|**Trench FS IGBT,Low Loss**
**Trench FS IGBT,Low Loss**
**NPT Ultra Fast IGBT**
GD50FFX65C5S
650
50
1.45 1.7 0.793 C5.2/24
GD75FFX65C5S
650
75
1.45 2.3 0.561 C5.2/24
GD100FFX65C5S
650
100
1.45 3.4 0.452 C5.2/24
GD50FFX65C5SF
650
50
1.45 1.7 0.793 C5.12/24
GD75FFX65C5SF
650
75
1.45 2.3 0.561 C5.12/24
GD100FFX65C5SF
650
100
1.45 3.4 0.452 C5.12/24
GD100FFX65C6S
650
100
1.45 3.4 0.452 C6.2/25
GD150FFX65C6S
650
150
1.45 5.5 0.339 C6.2/25
GD200FFX65C6S
650
200
1.45 6.9 0.247 C6.2/25
GD100FFX65C6SF
650
100
1.45 3.4 0.452 C6.8/26
GD150FFX65C6SF
650
150
1.45 5.5 0.339 C6.8/26
GD200FFX65C6SF
650
200
1.45 6.9 0.247 C6.8/26
GD30PIX65C5S
650
30
1.45 1.0 1.025 C5.0/23
GD50PIX65C5S
650
50
1.45 1.7 0.793 C5.0/23
GD50PIX65C6S
650
50
1.45 1.7 0.793 C6.0/25
GD75PIX65C6S
650
75
1.45 2.3 0.561 C6.0/25
GD100PIX65C6S
650
100
1.45 3.4 0.452 C6.0/25
GD50HHU120C5S
1200
50
3.10 7.9 0.316 C5.4/24
GD75HHU120C5S
1200
75
3.10 9.3 0.225 C5.4/24
GD100HHU120C6S 1200
100
3.10 12.7 0.196 C6.4/26
GD150HHU120C6S 1200
150
3.10 23.7 0.106 C6.4/26
650V 3 Phase Bridge with NTC
650V PIM
1200V H Bridge||
|||
|||
## Low Power Modules
VCES IC VCE(sat) (Eon+Eoff) Rth(J-C) Package Type V A @Tj=25℃ typ. @Tj=125℃ typ. K/W Outline/page Circuit V mJ
|1200V 3 Phase Bridge with NTC
Waa
aaa aaa aaa|1200V 3 Phase Bridge with NTC
Waa
aaa aaa aaa|1200V 3 Phase Bridge with NTC
Waa
aaa aaa aaa|1200V 3 Phase Bridge with NTC
Waa
aaa aaa aaa|1200V 3 Phase Bridge with NTC
Waa
aaa aaa aaa|1200V 3 Phase Bridge with NTC
Waa
aaa aaa aaa|1200V 3 Phase Bridge with NTC
Waa
aaa aaa aaa|1200V 3 Phase Bridge with NTC
Waa
aaa aaa aaa|1200V 3 Phase Bridge with NTC
Waa
aaa aaa aaa|1200V 3 Phase Bridge with NTC
Waa
aaa aaa aaa|1200V 3 Phase Bridge with NTC
Waa
aaa aaa aaa|1200V 3 Phase Bridge with NTC
Waa
aaa aaa aaa|1200V 3 Phase Bridge with NTC
Waa
aaa aaa aaa|1200V 3 Phase Bridge with NTC
Waa
aaa aaa aaa|1200V 3 Phase Bridge with NTC
Waa
aaa aaa aaa|1200V 3 Phase Bridge with NTC
Waa
aaa aaa aaa|1200V 3 Phase Bridge with NTC
Waa
aaa aaa aaa|1200V 3 Phase Bridge with NTC
Waa
aaa aaa aaa|1200V 3 Phase Bridge with NTC
Waa
aaa aaa aaa|1200V 3 Phase Bridge with NTC
Waa
aaa aaa aaa|1200V 3 Phase Bridge with NTC
Waa
aaa aaa aaa|1200V 3 Phase Bridge with NTC
Waa
aaa aaa aaa|1200V 3 Phase Bridge with NTC
Waa
aaa aaa aaa|1200V 3 Phase Bridge with NTC
Waa
aaa aaa aaa|1200V 3 Phase Bridge with NTC
Waa
aaa aaa aaa|1200V 3 Phase Bridge with NTC
Waa
aaa aaa aaa|1200V 3 Phase Bridge with NTC
Waa
aaa aaa aaa|1200V 3 Phase Bridge with NTC
Waa
aaa aaa aaa|1200V 3 Phase Bridge with NTC
Waa
aaa aaa aaa|1200V 3 Phase Bridge with NTC
Waa
aaa aaa aaa|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Advanced Trench FS IGBT,Low Loss**||||||||||||||||||||||||||||||
|GD25FFY120C5S|1200|25
1.70 4.8 0.808 C5.2/24|1.70 4.8 0.808 C5.2/24|||||||||||||||||||||||||||
|GD35FFY120C5S|1200|35
1.70 6.1 0.629 C5.2/24|1.70 6.1 0.629 C5.2/24|||||||||||||||||||||||||||
|GD50FFY120C5S|1200|50
1.70 12.7 0.512 C5.2/24|1.70 12.7 0.512 C5.2/24|||||||||||||||||||||||||||
|GD75FFY120C5S|1200|75
1.70 14.4 0.394 C5.2/24|1.70 14.4 0.394 C5.2/24|||||||||||||||||||||||||||
|||||||||||||||||||||||||||||||
|GD100FFY120C5S|1200|100
1.70 18.5 0.293 C5.2/24|1.70 18.5 0.293 C5.2/24|||||||||||||||||||||||||||
|||||||||||||||||||||||||||||||
|GD75FFY120C6S|1200|75
1.70 14.4 0.394 C6.2/25|1.70 14.4 0.394 C6.2/25|||||||||||||||||||||||||||
|GD100FFY120C6S|1200|100
1.70 18.5 0.293 C6.2/25|1.70 18.5 0.293 C6.2/25|||||||||||||||||||||||||||
|**NPT Low Loss**
GD150FFY120C6S
GD200FFY120C6S|1200
1200|150
1.70 26.1 0.170 C6.2/25
200
1.70 36.8 0.149 C6.2/25|1.70 26.1 0.170 C6.2/25
1.70 36.8 0.149 C6.2/25||||~~Scmce~~|||||||||||||||||~~cs~~||||||
|||||||||||||||||||||||||||||||
|GD25FFK120C5SP 1200|GD25FFK120C5SP 1200|GD25FFK120C5SP 1200
25
2.20 5.5 0.576 C5.6/25|2.20 5.5 0.576 C5.6/25|||||||||||||||||||||||||||
|GD35FFK120C5SP 1200|GD35FFK120C5SP 1200|GD35FFK120C5SP 1200
35
2.20 7.9 0.707 C5.6/25|2.20 7.9 0.707 C5.6/25|||||||||||||||||||||||||||
|GD50FFK120C5SP 1200|GD50FFK120C5SP 1200|GD50FFK120C5SP 1200
50
2.20 12.5 0.332 C5.6/25|2.20 12.5 0.332 C5.6/25|||||||||||||||||||||||||||
|GD75FFK120C6S|1200|1200
75
2.20 12.4 0.219 C6.2/25|2.20 12.4 0.219 C6.2/25|||||||||||||||||||||||||||
|GD100FFK120C6S|1200|1200
100
2.20 18.3 0.219 C6.2/25|2.20 18.3 0.219 C6.2/25|||||||||||||||||||||||||||
|**Advanced Trench FS IGBT,Low Loss**
1200V PIM
Wa~~a~~
aaa aaa aaa||||||||||||||||||||||||||||||
|GD10PIY120C5S|1200|10
1.70 2.3 1.279 C5.0/23|1.70 2.3 1.279 C5.0/23|||||||||||||||||||||||||||
|GD15PIY120C5S|1200|15
1.70 3.1 0.904 C5.0/23|1.70 3.1 0.904 C5.0/23|||||||||||||||||||||||||||
|GD25PIY120C5S|1200|25
1.70 4.8 0.728 C5.0/23|1.70 4.8 0.728 C5.0/23|||||||||||||||||||||||||||
|GD40PIY120C5S|1200|1200
40
1.70 5.8 0.535 C5.0/23|1.70 5.8 0.535 C5.0/23|||||||||||||||||||||||||||
|GD25PIY120C5SN|1200|1200
25
1.70 4.8 0.728 C5.3/24|1.70 4.8 0.728 C5.3/24|||||||||||||||||||||||||||
|GD35PIY120C5SN
GD50PIY120C5SN
GD40PIY120C6S|1200
1200
1200|1200
35
1.70 6.1 0.569 C5.3/24
1200
50
1.70 12.7 0.512 C5.3/24
1200
40
1.70 5.8 0.535 C6.0/25|1.70 6.1 0.569 C5.3/24
1.70 12.7 0.512 C5.3/24
1.70 5.8 0.535 C6.0/25|~~Ee~~|~~Ee~~|~~Ee~~|~~Ee~~|~~Ee~~|~~Ee~~|~~Ee~~|~~Ee~~|~~Ee~~|~~Ee~~|~~Ee~~|~~Ee~~|~~Ee~~|~~Ee~~|~~Ee~~|~~Ee~~|~~Ee~~|~~Ee~~|~~Ee~~|~~Ee~~|~~Eeay~~|~~Eeay~~|~~Eeay~~|~~Eeay~~|~~Eeay~~|~~Eeay~~|
|GD50PIY120C6S|1200|1200
50
1.70 12.7 0.512 C6.0/25|1.70 12.7 0.512 C6.0/25|||||||||||||||||||||||||||
|GD75PIY120C6S|1200|1200
75
1.70 14.4 0.394 C6.0/25|1.70 14.4 0.394 C6.0/25|||||||||||||||||||||||||||
|GD50PIY120C6SN|1200|1200
50
1.70 12.7 0.512 C6.3/25|1.70 12.7 0.512 C6.3/25|||||||||||||||||||||||||||
|GD75PIY120C6SN|1200|1200
75
1.70 14.4 0.394 C6.3/25|1.70 14.4 0.394 C6.3/25|||||||||||||||||||||||||||
|GD100PIY120C6SN 1200|GD100PIY120C6SN 1200|GD100PIY120C6SN 1200
100
1.70 18.5 0.293 C6.3/25|1.70 18.5 0.293 C6.3/25|||||||||||||||||||||||||||
|GD150PIY120C6SN 1200|GD150PIY120C6SN 1200|GD150PIY120C6SN 1200
150
1.70 26.1 0.170 C6.3/25|1.70 26.1 0.170 C6.3/25|||||||||||||||||||||||||||
STARPOWER SEMICONDUCTOR LTD.
2019/2020
## Low Power Modules
|||
|---|---|
|Type
VCES
V
IC
A
VCE(sat)
@Tj=25℃typ.
V
(Eon+Eoff)
@Tj=125℃typ.
mJ
Rth(J-C)
K/W
Package
Outline/page|Circuit|
|||
|**SPT+ Low Loss and Fast IGBT**
**SPT+ Low Loss and Fast IGBT**
**Trench FS IGBT,Low Loss**
**Trench FS IGBT,Low Loss**
GD75FFL170C6S
1700
75
2.40 47.6 0.273 C6.2/25
GD100FFL170C6S
1700
100
2.40 56.8 0.210 C6.2/25
GD150FFL170C6S
1700
150
2.40 101.0 0.169 C6.2/25
GD100FFL170C6SF 1700
100
2.40 56.8 0.210 C6.8/26
GD150FFL170C6SF 1700
150
2.40 101.0 0.169 C6.8/26
GD50PIL170C6S
1700
50
2.40 33.0 0.380 C6.0/25
GD75PIL170C6S
1700
75
2.40 47.6 0.273 C6.0/25
GD75FFX170C6S
1700
75
1.85 51.0 0.319 C6.2/25
GD100FFX170C6S
1700
100
1.85 62.4 0.245 C6.2/25
GD150FFX170C6S
1700
150
1.85 113.7 0.167 C6.2/25
GD100FFX170C6SF 1700
100
1.85 62.4 0.245 C6.8/26
GD150FFX170C6SF 1700
150
1.85 113.7 0.167 C6.8/26
GD75PFX170C6S
1700
75
1.85 51.0 0.319 C6.7/26
GD100PFX170C6S 1700
100
1.85 62.4 0.245 C6.7/26
GD150PFX170C6S 1700
150
1.85 113.7 0.167 C6.7/26
GD50PIX170C6S
1700
50
1.85 31.3 0.455 C6.0/25
GD75PIX170C6S
1700
75
1.85 51.0 0.319 C6.0/25
1700V 3 Phase Bridge with NTC
1700V PIM||
|||
|||
## Low Power Module Package Outlines
**==> picture [47 x 8] intentionally omitted <==**
**----- Start of picture text -----**
Case L1.2
**----- End of picture text -----**
**==> picture [46 x 8] intentionally omitted <==**
**----- Start of picture text -----**
Case L2.2
**----- End of picture text -----**
## Case L2.1
## Case L2.5
**==> picture [63 x 49] intentionally omitted <==**
**----- Start of picture text -----**
“ U ml G1 V G3 W G5 L1
es@ e b b) ae) T2 T1 ad L2
L3
terg P1 P
EU G2 EV G4 EW G6 N GB NB B
**----- End of picture text -----**
STARPOWER SEMICONDUCTOR LTD.
2019/2020
## Low Power Module Package Outlines
**==> picture [235 x 244] intentionally omitted <==**
**----- Start of picture text -----**
Case L2.6
G5 W W G6 E ' W
EW
V
V G4
G3 P P T1 T2 EVE ' V
EU
G1 U U G2 E ' U
**----- End of picture text -----**
**==> picture [235 x 243] intentionally omitted <==**
**----- Start of picture text -----**
Case L3.1
**----- End of picture text -----**
**==> picture [234 x 244] intentionally omitted <==**
**----- Start of picture text -----**
Case L3.0
**----- End of picture text -----**
**==> picture [234 x 244] intentionally omitted <==**
**----- Start of picture text -----**
Case L3.2
**----- End of picture text -----**
## Low Power Module Package Outlines
**==> picture [46 x 8] intentionally omitted <==**
**----- Start of picture text -----**
Case L3.3
**----- End of picture text -----**
**==> picture [47 x 8] intentionally omitted <==**
**----- Start of picture text -----**
Case L3.5
**----- End of picture text -----**
**==> picture [180 x 132] intentionally omitted <==**
**----- Start of picture text -----**
fa 0.63 IL L
51±0.1 3.2 9.612.81619.222.425.628.832 38.441.644.848
G3 E3 U U U U G2
U U
22.556.720±0.2±0.5±0.3 ∅ 4.5 U U E2
T1 E1
I l T2 C) ° G1
Itp E4 d G4 - S68 - - -- 888 NNN NN N 88 + + 0 08 + ++
} Tt. Se °
0.1×8.5+0.3
16.2±0.5 12±0.35 3.25±0.5
42.5±0.15 48±0.3 53±0.1 62.8±0.5
6.4 3.2
16 12.8
32 28.8 25.6
**----- End of picture text -----**
**==> picture [47 x 8] intentionally omitted <==**
**----- Start of picture text -----**
Case L4.0
**----- End of picture text -----**
**==> picture [190 x 162] intentionally omitted <==**
**----- Start of picture text -----**
Case F1.1
66
A B
局部视图 A
比例 4 : 1
soneon ann
PL_SQL 7
68.4
65.9
64.2
22.519.8 ee 1213 1514 1716 18 19 20 =,
局部视图 B 11.2515 Tea + tT Tie 21
比例 5 : 1 5.6 7.52.70 11 10 9 8 7 6 5 4 3 12 2223
( 1.63.2 } eae trepentett + Nea)
( jo 57.455 |
4.3
2-
2-R4.5
11.5
1 1.5 2
15.65 13.5
5.6 24.6 29 31.5 32.5
0 2.7 5.4 7.5 8.1 10.8 13.5 15 16.2 16.75 20.1 22.8 25.5 25.55 33.5
**----- End of picture text -----**
STARPOWER SEMICONDUCTOR LTD.
2019/2020
## Low Power Module Package Outlines
**==> picture [512 x 644] intentionally omitted <==**
**----- Start of picture text -----**
Case F1.2 Case F1.3
66
A
66 局部视图 A B
局部视图 A 比例 4 : 1 A B 比例 4 : 1
68.4
65.9
64.2
68.465.9 38.8
64.2
22.6 13 14 15 16 17 18 19 20
局部视图 B 比例 5 : 1 22.615.514.812.711.39.9 12 1311109 14 1516 17181920 局部视图 B 比例 5 : 1 14.5514.811.38.057.8 119 1210 2122
5.6 8.27.10 78 6 5 4 3 2 1 5.6 0 8 7 6 5 4 3 2 1
1.6 1.6
3.2 3.2
55
55 57.4
57.4
Case F1.4 Case F2.0
8271800.50.2 19 20 21 22 23 24 25 26 27 28 29 28.525
30 16.9
31 8.6
181716151413 121110 9 8 76 54 3 2 32 1 2.80
26.25
2-R5.35
2- 4.30
4.3
4.3 2-
2-
2-R4.5
1
4-
2-R4.5
1
4-
10.05 4- 5.50
4-
2
11.5
1 1.5 2 11.5 1 1.5 2
15.65 13.5
15.65 13.5
5.6 24.6 29 31.5 32.5
5.6 24.6 29 31.5 32.5
0 2.8 10.1 12.9 16.8 19.2 22 30.8 33.6 0 3 11.9 14.9 16.8 20.65 23.65 30.6 33.6
10.67 12.37 16.230.5 3.83
0.2
14.25 30.8
0 2.8 5.6 7.58.411.214 14.5 16.8 17.3 19.6 22 22.4 25.2 28 29 31.8 35 36.5 37.8 43.5 44.8 47.7 52.55
0.5
20 34.80 37.4
**----- End of picture text -----**
## Low Power Module Package Outlines
**==> picture [47 x 9] intentionally omitted <==**
**----- Start of picture text -----**
Case F3.0
**----- End of picture text -----**
**==> picture [47 x 9] intentionally omitted <==**
**----- Start of picture text -----**
Case F4.1
**----- End of picture text -----**
**==> picture [428 x 419] intentionally omitted <==**
**----- Start of picture text -----**
43.30 ±0.30 1.504.403 -0.100 -0.100 A 66 B
局部视图 A
比例 4 : 1
A _ igs Sep lLNU UN Logg
68.4
65.9
64.2
OPT 11131210 9 5566815147 6453516±0.50±0.20516174 183 1912 22212320 pel ete 22.5019.801511.257.502.700 局部视图 B 比例 5 : 1 5.6 11.2522.519.87.52.7150 ss een 11121310 9 815147 17166 5 4 318 1912 20212223
1.6
3.2
55
57.4
seEE Re HSERE I GF
Case F5.1 Case C5.0
Cu | or pk ta
82
71
28.5 1920 21 2223 24 2526 27 28
25 29
16.9 30
14.25
8.6 31
2.80 HUAWO 18 bieeeddepec 17 16 15141312 1110 9 8 tse 76 54 lees 3 232 1 ay 7 EEE e rs
LICATO MS SSS I e z
4 ttrretterng tt ett OY ‘ iMERFLE|
R5.50
4.30
4.3
2-
4.3
2-
2-R4.5
R4.50
4- 2 4-
5.5
1 1.50 2 18.70 20.70 21.20±0.50 3.40 1 1.5 2 17
21.15 19
5.6 24.6 29 31.5 32.5
22±0.20 29±0.30 31.50 32.50±0.50
0 2.70 5.40 7.50 8.10 10.80 13.50 15 16.20 16.75 20.10 22.80 25.50 33.50 0 2.7 5.4 7.5 8.1 10.8 13.5 15 16.2 16.75 20.1 22.8 25.5 25.55 33.5
6.8
17
3.4
20 30.8 37.4
0 2.8 5.6 7.5 8.4 11.2 14 14.5 16.8 17.3 19.6 22 22.4 25.2 26.25 28 29 31.8 35 36.5 37.8 43.5 44.8 47.7 52.55
**----- End of picture text -----**
STARPOWER SEMICONDUCTOR LTD.
2019/2020
## Low Power Module Package Outlines
**==> picture [235 x 519] intentionally omitted <==**
**----- Start of picture text -----**
Case C5.12
24 17
1 12
Case C5.3
**----- End of picture text -----**
**==> picture [234 x 519] intentionally omitted <==**
**----- Start of picture text -----**
Case C5.2
Case C5.4
**----- End of picture text -----**
## Low Power Module Package Outlines
**==> picture [295 x 9] intentionally omitted <==**
**----- Start of picture text -----**
Case C5.6 Case C6.0
**----- End of picture text -----**
**==> picture [158 x 154] intentionally omitted <==**
**----- Start of picture text -----**
Case C6.2
3
yt ff f finn nn f _ f f f nnn Onn f\
astm om) 01 aan of
an 122.
A e qed § q S28 a8
heLAY —ee —— 27 e eaeee 24 7 21 l L 19 }
i ! q a
Jd. i _—__|____. jae
1 3 5 7 9 11
30
16
33
13
**----- End of picture text -----**
**==> picture [49 x 8] intentionally omitted <==**
**----- Start of picture text -----**
Case C6.3
**----- End of picture text -----**
STARPOWER SEMICONDUCTOR LTD.
2019/2020
## Low Power Module Package Outlines
**==> picture [235 x 244] intentionally omitted <==**
**----- Start of picture text -----**
Case C6.4
**----- End of picture text -----**
**==> picture [235 x 23] intentionally omitted <==**
**----- Start of picture text -----**
Case C6.8
**----- End of picture text -----**
**==> picture [235 x 222] intentionally omitted <==**
**----- Start of picture text -----**
27 24 21 19
1 3 5 7 9 11
30
16
33
13
**----- End of picture text -----**
**==> picture [234 x 244] intentionally omitted <==**
**----- Start of picture text -----**
Case C6.7
**----- End of picture text -----**
## Medium Power Modules
VCES IC VCE(sat) (Eon+Eoff) Rth(J-C) Package Type V A @Tj=25℃ typ. @Tj=125℃ typ. K/W Outline/page Circuit V mJ
|650V Boost Chopper
ee|650V Boost Chopper
ee|650V Boost Chopper
ee|
|---|---|---|
|**Trench FS IGBT,Low Loss**
GD200CUX65C2S
650
200
1.45 6.9 0.245 C2.0/35
GD300CUX65C2S
650
300
1.45 12.7 0.157 C2.0/35
GD400CUX65C2S
650
400
1.45 16.2 0.121 C2.0/35
GD600CUX65C2S
650
600
1.45 29.9 0.080 C2.0/35
~~i:~~|~~:~~|~~:~~|
|650V Buck Chopper
~~a~~|650V Buck Chopper
~~a~~|650V Buck Chopper
~~a~~|650V Buck Chopper
~~a~~|650V Buck Chopper
~~a~~|650V Buck Chopper
~~a~~|650V Buck Chopper
~~a~~|650V Buck Chopper
~~a~~|650V Buck Chopper
~~a~~|650V Buck Chopper
~~a~~|650V Buck Chopper
~~a~~|
|---|---|---|---|---|---|---|---|---|---|---|
|**Trench FS IGBT,Low Loss**|**Trench FS IGBT,Low Loss**||||||||||
|GD200CLX65C2S
GD300CLX65C2S
GD400CLX65C2S
GD600CLX65C2S|650
650
650
650|200
300
400
600|1.45 6.9 0.245 C2.0/35
1.45 12.7 0.157 C2.0/35
1.45 16.2 0.121 C2.0/35
1.45 29.9 0.080 C2.0/35|s~~i~~|||||||
|650V Half Bridge
e~~e~~|||||||||||
|**Trench FS IGBT,Low Loss**|**Trench FS IGBT,Low Loss**||||||||||
|GD50HFX65C1S|650|50|1.45 1.7 0.470 C1.0/35||||||||
|GD75HFX65C1S|650|75|1.45 2.3 0.707 C1.0/35||||||||
|GD100HFX65C1S|650|100|1.45 3.4 0.452 C1.0/35||||||||
|GD150HFX65C1S|650|150|1.45 5.5 0.339 C1.0/35||||||||
|GD200HFX65C1S|650|200|1.45 6.9 0.245 C1.0/35||||||||
|GD200HFX65C2S|650|200|1.45 6.9 0.245 C2.0/35|~~a~~|||||||
||||||||||||
|GD300HFX65C2S|650|300|1.45 12.7 0.157 C2.0/35||||||||
||||||||||||
|GD400HFX65C2S
GD600HFX65C2S|650
650|400
600|1.45 16.2 0.121 C2.0/35
1.45 29.9 0.080 C2.0/35|~~|~~|||||||
|GD200HFX65C8S|650|200|1.45 6.9 0.245 C8.0/36||||||||
|GD300HFX65C8S|650|300|1.45 12.7 0.157 C8.0/36||||||||
|GD400HFX65C8S|650|400|1.45 16.2 0.121 C8.0/36||||||||
|GD200HFX65C8SN|650|200|1.45 6.9 0.245 C8.1/36||||||||
|GD300HFX65C8SN|650|300|1.45 12.7 0.157 C8.1/36||||||||
|GD400HFX65C8SN|650|400|1.45 16.2 0.121 C8.1/36||||||||
STARPOWER SEMICONDUCTOR LTD.
2019/2020
## Medium Power Modules
|Type|VCES
V|IC
A|VCE(sat)
@Tj=25℃typ.
V|(Eon+Eoff)
@Tj=125℃typ.
mJ|Rth(J-C)
K/W|Package
Outline/page|Circuit|Circuit|Circuit|Circuit|Circuit|Circuit||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|1200V Single||||||||||||||||
|**Advanced Trench FS IGBT,Low Loss**||||||||||||||||
|GD300SGY120C2S|1200|300|1.70|57.1|0.093|C2.1/35||||||||||
|GD400SGY120C2S|1200|400|1.70|86.8|0.072|C2.1/35||||||||||
|||||||||||||||||
|GD600SGY120C2S|1200|600|1.70|103.8|0.040|C2.1/35||||||||||
|||||||||||||||||
|**NPT Ultra Fast IGBT**||||||||||||||||
|||||||||||||||||
|GD400SGU120C2S|1200|400|3.10|41.6|0.047|C2.1/35||||||||||
|GD600SGU120C2S|1200|600|3.10|130.8|0.031|C2.1/35||||||||||
|1200V Boost Chopper||||||||||||||||
|**Advanced Trench FS IGBT,Low Loss**||||||||||||||||
|GD100CUY120C1S|1200|100|1.70|12.7|0.512|C1.0/35||||||||||
|GD150CUY120C1S|1200|150|1.70|14.4|0.394|C1.0/35||||||||||
|GD100CUY120C2S|1200|100|1.70|18.5|0.278|C2.0/35||||||||||
|GD150CUY120C2S|1200|150|1.70|26.1|0.203|C2.0/35||||||||||
|GD200CUY120C2S|1200|200|1.70|36.8|0.143|C2.0/35||||||||||
|||||||||||||||||
|GD300CUY120C2S|1200|300|1.70|57.1|0.093|C2.0/35||||||||||
|||||||||||||||||
|GD400CUY120C2S|1200|400|1.70|86.8|0.072|C2.0/35||||||||||
|GD450CUY120C2S|1200|450|1.70|89.8|0.063|C2.0/35||||||||||
|GD600CUY120C2S|1200|600|1.70|103.8|0.040|C2.0/35||||||||||
|1200V Buck Chopper||||||||||||||||
|**Advanced Trench FS IGBT,Low Loss**||||||||||||||||
|GD100CLY120C1S|1200|100|1.70|12.7|0.512|C1.0/35||||||||||
|||||||||||||||||
|GD150CLY120C1S|1200|150|1.70|14.4|0.394|C1.0/35||||||||||
|||||||||||||||||
|GD100CLY120C2S|1200|100|1.70|18.5|0.278|C2.0/35||||||||||
|GD150CLY120C2S|1200|150|1.70|26.1|0.203|C2.0/35||||||||||
|||||||||||||||||
|GD200CLY120C2S|1200|200|1.70|36.8|0.143|C2.0/35||||||||||
|GD300CLY120C2S|1200|300|1.70|57.1|0.093|C2.0/35||||||||||
|GD400CLY120C2S|1200|400|1.70|86.8|0.072|C2.0/35||||||||||
|GD450CLY120C2S|1200|450|1.70|89.8|0.063|C2.0/35||||||||||
|GD600CLY120C2S|1200|600|1.70|103.8|0.040|C2.0/35||||||||||
## Medium Power Modules
VCES IC VCE(sat) (Eon+Eoff) Rth(J-C) Package Type V A @Tj=25℃ typ. @Tj=125℃ typ. K/W Outline/page Circuit V mJ
|1200V Half Bridge|||
|---|---|---|
|**Advanced Trench FS IGBT,Low Loss**|||
|GD50HFY120C1S
1200|50|1.70 12.7 0.512 C1.0/35|
|GD75HFY120C1S
1200|75|1.70 14.4 0.394 C1.0/35|
|GD100HFY120C1S 1200|100|1.70 18.5 0.278 C1.0/35|
|GD150HFY120C1S 1200|150|1.70 26.1 0.203 C1.0/35|
|GD100HFY120C2S 1200|100|1.70 18.5 0.278 C2.0/35|
|GD150HFY120C2S 1200|150|1.70 26.1 0.203 C2.0/35|
|GD200HFY120C2S 1200|200|1.70 36.8 0.143 C2.0/35|
|GD300HFY120C2S 1200|300|1.70 57.1 0.093 C2.0/35|
|GD400HFY120C2S 1200|400|1.70 86.8 0.072 C2.0/35|
|GD450HFY120C2S 1200
GD600HFY120C2S 1200|450
600|1.70 89.8 0.063 C2.0/35
1.70 103.8 0.040 C2.0/35|
|GD100HFY120C8S 1200|100|1.70 18.5 0.278 C8.0/36|
|GD150HFY120C8S 1200
GD200HFY120C8S 1200|150
200|1.70 26.1 0.203 C8.0/36
1.70 36.8 0.143 C8.0/36|
|GD150HFY120C8SN 1200|150|1.70 26.1 0.203 C8.1/36|
|GD200HFY120C8SN 1200|200|1.70 36.8 0.143 C8.1/36|
|**Advanced Trench FS Ultra Fast IGBT Without Short-circuit Capacity**|**Advanced Trench FS Ultra Fast IGBT Without Short-circuit Capacity**|**Advanced Trench FS Ultra Fast IGBT Without Short-circuit Capacity**|
|GD50HFF120C1S
1200|50|1.70 9.1 0.512 C1.0/35|
|GD75HFF120C1S
1200|75|1.70 9.8 0.394 C1.0/35|
|GD100HFF120C1S 1200|100|1.70 16.3 0.278 C1.0/35|
|GD150HFF120C1S 1200|150|1.70 19.6 0.180 C1.0/35|
|GD100HFF120C2S 1200|100|1.70 16.3 0.278 C2.0/35|
|GD150HFF120C2S 1200|150|1.70 19.6 0.180 C2.0/35|
|GD200HFF120C2S 1200|200|1.70 32.7 0.142 C2.0/35|
|GD300HFF120C2S 1200|300|1.70 49.0 0.094 C2.0/35|
|GD400HFF120C2S 1200|400|1.70 65.2 0.066 C2.0/35|
STARPOWER SEMICONDUCTOR LTD.
2019/2020
## Medium Power Modules
|Type|VCES
V|IC
A|VCE(sat)
@Tj=25℃typ.
V|(Eon+Eoff)
@Tj=125℃typ.
mJ|Rth(J-C)
K/W|Package
Outline/page
Circuit|Package
Outline/page
Circuit|Package
Outline/page
Circuit|Package
Outline/page
Circuit|Package
Outline/page
Circuit|Package
Outline/page
Circuit|
|---|---|---|---|---|---|---|---|---|---|---|---|
|**NPT Low Loss**||||||||||||
|GD50HFK120C1S|1200|50|2.20|12.5|0.315|C1.0/35||||||
|GD75HFK120C1S|1200|75|2.20|12.4|0.229|C1.0/35||||||
|GD100HFK120C1S|1200|100|2.20|18.3|0.180|C1.0/35||||||
|GD100HFK120C2S|1200|100|2.20|18.3|0.165|C2.0/35||||||
|GD150HFK120C2S|1200|150|2.20|28.2|0.105|C2.0/35||||||
|GD200HFK120C2S|1200|200|2.20|41.1|0.092|C2.0/35||||||
|GD300HFK120C2S|1200|300|2.20|41.1|0.060|C2.0/35||||||
|**NPT Ultra Fast IGBT**||||||||||||
|GD40HFU120C1S|1200|40|3.10|6.3|0.447|C1.0/35||||||
|GD50HFU120C1S|1200|50|3.10|7.9|0.302|C1.0/35||||||
|||||||||||||
|GD75HFU120C1S|1200|75|3.10|12.7|0.221|C1.0/35||||||
|||||||||||||
|GD100HFU120C1S|1200|100|3.10|12.5|0.190|C1.0/35||||||
|GD100HFU120C2S|1200|100|3.10|15.7|0.180|C2.0/35||||||
|||||||||||||
|GD150HFU120C2S|1200|150|3.10|21.5|0.108|C2.0/35||||||
|GD200HFU120C2S|1200|200|3.10|24.9|0.095|C2.0/35||||||
|GD300HFU120C2S|1200|300|3.10|32.7|0.063|C2.0/35||||||
|GD400HFU120C2S|1200|400|3.10|41.6|0.047|C2.0/35||||||
|GD100HFU120C8S|1200|100|3.10|10.3|0.158|C8.0/36||||||
|GD150HFU120C8S|1200|150|3.10|16.0|0.107|C8.0/36||||||
|GD200HFU120C8S|1200|200|3.10|24.9|0.095|C8.0/36||||||
|GD150HFU120C8SN|1200|150|3.10|16.0|0.107|C8.1/36||||||
|GD200HFU120C8SN|1200|200|3.10|24.9|0.095|C8.1/36||||||
|1200V H Bridge||
|---|---|
|**NPT Ultra Fast IGBT**
GD40HCU120C8S 1200
40
3.10 6.3 0.447 C8.2/36
GD50HCU120C8S 1200
50
3.10 7.9 0.312 C8.2/36
GD75HCU120C8S 1200
75
3.10 11.9 0.210 C8.2/36||
## Medium Power Modules
VCES IC VCE(sat) (Eon+Eoff) Rth(J-C) Package Type V A @Tj=25℃ typ. @Tj=125℃ typ. K/W Outline/page Circuit V mJ
es 1700V Single **SPT+ Low Loss and Fast IGBT**
GD400SGL170C2S 1700 400 2.40 167.7 0.054 C2.1/35 GD600SGL170C2S 1700 600 2.40 388.0 0.040 C2.1/35 **Trench FS IGBT,Low Loss** GD400SGX170C2S 1700 400 1.85 304.0 0.062 C2.1/35 GD600SGX170C2S 1700 600 1.85 333.0 0.041 C2.1/35
~~|~~ 1700V Half Bridge
|**SPT+ Low Loss and Fast IGBT**|**SPT+ Low Loss and Fast IGBT**|**SPT+ Low Loss and Fast IGBT**||
|---|---|---|---|
|GD50HFL170C1S|1700|50|2.40 33.0 0.339 C1.0/35|
|GD75HFL170C1S|1700|75|2.40 47.6 0.262 C1.0/35|
|GD100HFL170C1S|1700|100|2.40 56.8 0.217 C1.0/35|
|GD100HFL170C2S|1700|100|2.40 63.3 0.217 C2.0/35|
|GD150HFL170C2S|1700|150|2.40 101.0 0.133 C2.0/35|
|GD200HFL170C2S|1700|200|2.40 152.1 0.108 C2.0/35|
|GD300HFL170C2S
GD400HFL170C2S|1700
1700|300
400|2.40 211.7 0.081 C2.0/35
2.40 167.7 0.054 C2.0/35|
|**Trench FS IGBT,Low Loss**|**Trench FS IGBT,Low Loss**|||
|GD50HFX170C1S|1700|50|1.85 31.3 0.358 C1.0/35|
|GD75HFX170C1S|1700|75|1.85 51.0 0.268 C1.0/35|
|GD100HFX170C1S 1700|GD100HFX170C1S 1700|100|1.85 62.4 0.237 C1.0/35|
|GD100HFX170C2S 1700|GD100HFX170C2S 1700|100|1.85 62.4 0.237 C2.0/35|
|GD150HFX170C2S 1700|GD150HFX170C2S 1700|150|1.85 113.7 0.133 C2.0/35|
|GD200HFX170C2S 1700|GD200HFX170C2S 1700|200|1.85 143.7 0.118 C2.0/35|
|GD300HFX170C2S 1700|GD300HFX170C2S 1700|300|1.85 195.8 0.082 C2.0/35|
|GD400HFX170C2S 1700|GD400HFX170C2S 1700|400|1.85 304.0 0.062 C2.0/35|
STARPOWER SEMICONDUCTOR LTD.
2019/2020
## Medium Power Modules
|||||||
|---|---|---|---|---|---|
|Type
VCES
V
IC
A
VCE(sat)
@Tj=25℃typ.
V
(Eon+Eoff)
@Tj=125℃typ.
mJ
Rth(J-C)
K/W
Package
Outline/page||||Circuit||
|||||||
|**Trench FS IGBT,Low Loss**
**Trench FS IGBT,Low Loss**
**Trench FS IGBT,Low Loss**
**Trench FS IGBT,Low Loss**
**Trench FS IGBT,Low Loss**
GD300HFX65C6S
650
300
1.45 12.7 0.148 C6.1/35
GD450HFX65C6S
650
450
1.45 20.3 0.116 C6.1/35
GD600HFX65C6S
650
600
1.45 29.9 0.091 C6.1/35
GD300HFX65C6H
650
300
1.45 12.7 0.157 C6.12/36
GD450HFX65C6H
650
450
1.45 20.3 0.116 C6.12/36
GD600HFX65C6H
650
600
1.45 29.9 0.091 C6.12/36
GD300MPX65C6S
650
300
1.45 12.7 0.157 C6.1/35
GD400MPX65C6S
650
400
1.45 16.2 0.121 C6.1/35
GD300MNX65C6S
650
300
1.45 12.7 0.157 C6.1/35
GD400MNX65C6S
650
400
1.45 16.2 0.121 C6.1/35
GD200FFX65P3S
650
200
1.45 8.1 0.200 P3.0/37
GD300FFX65P3S
650
300
1.45 12.7 0.168 P3.0/37
GD400FFX65P3S
650
400
1.45 16.2 0.122 P3.0/37
GD200FFX65P3H
650
200
1.45 8.1 0.400 P3.1/37
GD300FFX65P3H
650
300
1.45 12.7 0.257 P3.1/37
GD400FFX65P3H
650
400
1.45 16.2 0.200 P3.1/37
GD600HTX65P4S
650
600
1.45 22.7 0.120 P4.0/37
GD800HTX65P4S
650
800
1.45 28.0 0.100 P4.0/37
650V Half Bridge
650V Half NPC1 Up
650V Half NPC1 Low
650V 3 Phase Bridge with NTC
650V Tri-Pack||||||
|||||||
|||||||
|||||||
|||||||
|||||||
|||||||
|||||||
|||||||
|||||||
|||||||
|||||||
|||||||
|||||||
|||||||
|||||||
|||||||
|||||||
## Medium Power Modules
VCES IC VCE(sat) (Eon+Eoff) Rth(J-C) Package Type V A @Tj=25℃ typ. @Tj=125℃ typ. K/W Outline/page Circuit V mJ
|1200V Half Bridge
ee|1200V Half Bridge
ee|1200V Half Bridge
ee|1200V Half Bridge
ee|1200V Half Bridge
ee|1200V Half Bridge
ee|1200V Half Bridge
ee|1200V Half Bridge
ee|1200V Half Bridge
ee|1200V Half Bridge
ee|
|---|---|---|---|---|---|---|---|---|---|
|**Advanced Trench FS IGBT,Low Loss**||||||||||
|GD150HFY120C6S 1200|150
1.70 26.1 0.136 C6.1/35|1.70 26.1 0.136 C6.1/35||||||||
|GD225HFY120C6S 1200|225
1.70 40.7 0.122 C6.1/35|1.70 40.7 0.122 C6.1/35||||||||
|GD300HFY120C6S 1200|300
1.70 57.1 0.093 C6.1/35|1.70 57.1 0.093 C6.1/35||||||||
|GD450HFY120C6S 1200|450
1.70 89.8 0.069 C6.1/35|1.70 89.8 0.069 C6.1/35||||||||
|GD600HFY120C6S 1200|600
1.70 96.0 0.038 C6.1/35|1.70 96.0 0.038 C6.1/35||||||||
|GD150HFY120C6H 1200
GD225HFY120C6H 1200
GD300HFY120C6H 1200|150
1.70 26.1 0.136 C6.12/36
225
1.70 40.7 0.122 C6.12/36
300
1.70 57.1 0.093 C6.12/36|1.70 26.1 0.136 C6.12/36
1.70 40.7 0.122 C6.12/36
1.70 57.1 0.093 C6.12/36|~~J~~
~~c~~
~~_|~~|||||||
|||||||||||
|GD450HFY120C6H 1200|450
1.70 89.8 0.069 C6.12/36|1.70 89.8 0.069 C6.12/36||||||||
|GD600HFY120C6H 1200|600
1.70 96.0 0.038 C6.12/36|1.70 96.0 0.038 C6.12/36||||||||
|**NPT Ultra Fast IGBT**||||||||||
|GD150HFU120C6S 1200|150
3.10 23.7 0.106 C6.1/35|3.10 23.7 0.106 C6.1/35||||||||
|GD225HFU120C6S 1200|225
3.10 33.0 0.078 C6.1/35|3.10 33.0 0.078 C6.1/35||||||||
|GD300HFU120C6S 1200|300
3.10 32.7 0.066 C6.1/35|3.10 32.7 0.066 C6.1/35||||||||
e 1200V Half NPC1 Up ~~e~~ **Advanced Trench FS IGBT,Low Loss** ~~co~~ GD300MPY120C6S 1200 300 1.70 57.1 0.093 C6.1/35 ~~|~~ 1200V Half NPC1 Low e ~~e~~ **Advanced Trench FS IGBT,Low Loss** ~~-~~ GD300MNY120C6S 1200 300 1.70 57.1 0.093 C6.1/35 ~~a~~ e 1200V Tri-Pack ~~e~~ **Advanced Trench FS IGBT,Low Loss** GD400HTY120P4S 1200 400 1.70 46.4 0.110 P4.0/37
STARPOWER SEMICONDUCTOR LTD.
2019/2020
## Medium Power Modules
|Type|VCES
V|IC
A|VCE(sat)
@Tj=25℃typ.
V|(Eon+Eoff)
@Tj=125℃typ.
mJ|Rth(J-C)
K/W|Package
Outline/page||Circuit|Circuit|Circuit|Circuit|||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|1700V Half Bridge||||||||||||||
|**SPT+ Low Loss and**|**Fast IGBT**|||||||||||||
|GD150HFL170C6S|1700|150|2.40|101.0|0.117|C6.1/35||||||||
|GD225HFL170C6S|1700|225|2.40|164.5|0.091|C6.1/35||||||||
|GD300HFL170C6S|1700|300|2.40|205.0|0.074|C6.1/35||||||||
|GD450HFL170C6S|1700|450|2.40|286.0|0.046|C6.1/35||||||||
|GD600HFL170C6S|1700|600|2.40|371.0|0.035|C6.1/35||||||||
|||||||||||||||
|||||||||||||||
|||||||||||||||
|**Trench FS IGBT,Low**|**Loss**|||||||||||||
|GD150HFX170C6S|1700|150|1.85|113.7|0.134|C6.1/35||||||||
|GD225HFX170C6S|1700|225|1.85|157.0|0.113|C6.1/35||||||||
|GD300HFX170C6S|1700|300|1.85|212.0|0.082|C6.1/35||||||||
|GD450HFX170C6S|1700|450|1.85|323.0|0.059|C6.1/35||||||||
|GD600HFX170C6S|1700|600|1.85|434.0|0.045|C6.1/35||||||||
## Medium Power Module Package Outlines
**==> picture [294 x 8] intentionally omitted <==**
**----- Start of picture text -----**
Case C1.0 Case C2.0
**----- End of picture text -----**
**==> picture [294 x 9] intentionally omitted <==**
**----- Start of picture text -----**
Case C2.1 Case C6.1
**----- End of picture text -----**
STARPOWER SEMICONDUCTOR LTD.
2019/2020
## Medium Power Module Package Outlines
**==> picture [235 x 243] intentionally omitted <==**
**----- Start of picture text -----**
Case C6.12
9 8 7 6
10 4
11 3
1 2
A
B
**----- End of picture text -----**
**==> picture [235 x 243] intentionally omitted <==**
**----- Start of picture text -----**
Case C8.1
**----- End of picture text -----**
**==> picture [235 x 243] intentionally omitted <==**
**----- Start of picture text -----**
Case C8.0
**----- End of picture text -----**
**==> picture [235 x 244] intentionally omitted <==**
**----- Start of picture text -----**
Case C8.2
**----- End of picture text -----**
Medium Power Module Package Outlines
**==> picture [293 x 8] intentionally omitted <==**
**----- Start of picture text -----**
Case P3.0 Case P3.1
**----- End of picture text -----**
**==> picture [47 x 9] intentionally omitted <==**
**----- Start of picture text -----**
Case P4.0
**----- End of picture text -----**
STARPOWER SEMICONDUCTOR LTD.
2019/2020
## High Power Modules
|Type|VCES
V|IC
A|VCE(sat)
@Tj=25℃typ.
V|(Eon+Eoff)
@Tj=125℃typ.
mJ|Rth(J-C)
K/W|Package
Outline/page|Circuit|
|---|---|---|---|---|---|---|---|
## 1200V Single
**Advanced Trench FS IGBT,Low Loss** GD800SGY120C3S 1200 800 1.70 154 0.028 C3.0/40 GD1200SGY120C3S 1200 1200 1.70 387 0.020 C3.0/40 GD1600SGY120C3S 1200 1600 1.70 573 0.015 C3.0/40 GD2400SGY120C3S 1200 2400 1.70 945 0.011 C3.0/40 GD800SGY120C3SN 1200 800 1.70 154 0.028 C3.2/40 GD1200SGY120C3SN 1200 1200 1.70 387 0.020 C3.2/40 GD1600SGY120C3SN 1200 1600 1.70 573 0.015 C3.2/40 GD2400SGY120C3SN 1200 2400 1.70 945 0.011 C3.2/40 GD2400SGY120C4S 1200 2400 1.70 945 0.011 C4.0/40 GD3600SGY120C4S 1200 3600 1.70 1377 0.008 C4.0/40
## 1200V Half Bridge with NTC
**Trench FS IGBT,Low Loss** GD450HFY120P1S 1200 450 1.70 103 0.058 P1.0/41 GD600HFY120P1S 1200 600 1.70 124 0.045 P1.0/41 GD900HFY120P1S 1200 900 1.70 240 0.029 P1.0/41 GD1400HFY120P2S 1200 1400 1.70 331 0.019 P2.0/41
## 1200V Half Bridge
**Advanced Trench FS IGBT,Low Loss** GD600HFY120C3S 1200 600 1.70 96 0.044 C3.1/40 GD800HFY120C3S 1200 800 1.70 174 0.032 C3.1/40 GD1200HFY120C3S 1200 1200 1.70 439 0.025 C3.1/40
## 1700V Single
## **SPT+ Low Loss and Fast IGBT**
GD800SGL170C3S 1700 800 2.40 512 0.021 C3.0/40 GD1200SGL170C3S 1700 1200 2.40 674 0.017 C3.0/40 GD1600SGL170C3S 1700 1600 2.40 1070 0.013 C3.0/40 GD2400SGL170C3S 1700 2400 2.40 1580 0.010 C3.0/40 GD800SGL170C3SN 1700 800 2.40 512 0.021 C3.2/40 GD1200SGL170C3SN 1700 1200 2.40 674 0.017 C3.2/40 GD1600SGL170C3SN 1700 1600 2.40 1070 0.013 C3.2/40 GD2400SGL170C3SN 1700 2400 2.40 1580 0.010 C3.2/40
## High Power Modules
VCES IC VCE(sat) (Eon+Eoff) Rth(J-C) Package Type V A @Tj=25℃ typ. @Tj=125℃ typ. K/W Outline/page Circuit V mJ
GD2400SGL170C4S 1700 2400 2.40 1580 0.009 C4.0/40 GD3600SGL170C4S 1700 3600 2.40 2328 0.006 C4.0/40
## **Trench FS IGBT,Low Loss**
GD800SGX170C3S 1700 800 1.85 605 0.026 C3.0/40 GD1200SGX170C3S 1700 1200 1.85 867 0.019 C3.0/40 GD1600SGX170C3S 1700 1600 1.85 1190 0.015 C3.0/40 GD2400SGX170C3S 1700 2400 1.85 1554 0.011 C3.0/40 GD800SGX170C3SN 1700 800 1.85 605 0.026 C3.2/40 GD1200SGX170C3SN 1700 1200 1.85 867 0.019 C3.2/40 GD1600SGX170C3SN 1700 1600 1.85 1190 0.015 C3.2/40 GD2400SGX170C3SN 1700 2400 1.85 1554 0.011 C3.2/40 GD2400SGX170C4S 1700 2400 1.85 1554 0.010 C4.0/40 GD3600SGX170C4S 1700 3600 1.85 2698 0.007 C4.0/40
## rere 1700V Half Bridge with NTC **SPT+ Low Loss and Fast IGBT**
GD650HFL170P1S 1700 650 2.40 505 0.035 P1.0/41 GD1000HFL170P2S 1700 1000 2.40 590 0.023 P2.0/41 **Trench FS IGBT,Low Loss**
GD450HFX170P1S 1700 450 1.85 379 0.055 P1.0/41 GD650HFX170P1S 1700 600 1.85 563 0.038 P1.0/41 GD1000HFX170P2S 1700 1000 1.85 763 0.025 P2.0/41 GD1400HFX170P2S 1700 1400 1.85 1250 0.016 P2.0/41
## rere 1700V Half Bridge **SPT+ Low Loss and Fast IGBT**
GD600HFL170C3S 1700 600 2.40 371 0.033 C3.1/40 GD800HFL170C3S 1700 800 2.40 512 0.026 C3.1/40 GD1200HFL170C3S 1700 1200 2.40 674 0.022 C3.1/40 **Trench FS IGBT,Low Loss** GD600HFX170C3S 1700 600 1.85 434 0.034 C3.1/40 GD800HFX170C3S 1700 800 1.85 605 0.031 C3.1/40 GD1200HFX170C3S 1700 1200 1.85 867 0.024 C3.1/40
STARPOWER SEMICONDUCTOR LTD.
2019/2020
## High Power Module Package Outlines
Case C3.0 Case C3.1 Case C3.2 Case C4.0
Case C3.1
**==> picture [482 x 221] intentionally omitted <==**
## High Power Module Package Outlines
Case P1.0 Case P2.0
STARPOWER SEMICONDUCTOR LTD.
2019/2020
## SiC Mosfet Modules
|Type|VDSS
V|ID
A|RDS(on)
@Tj=25℃max.
mOhm|Rth(J-C)
K/W|Package
Outline/page|Circuit|Circuit|Circuit|Circuit|Circuit|Circuit|
|---|---|---|---|---|---|---|---|---|---|---|---|
|SiC Mosfet||||||||||||
|MD120HFR120C2S|1200|120|13|0.181|C2.0/43|||||||
|MD300HFR120C2S
MD400HFR120C2S|1200
1200|300
400|6.5
4.4
|0.1 00
0.074|C2.0/43
C2.0/43|||||||
|||||||||||||
|MD200HFR170C2S
MD250HFR170C2S
MD120HFR120B3S|1700
1700
1200|200
250
120|8.7
10.4
13|0.058
0.069
0.181|C2.0/43
C2.0/43
B3.7/43|||||||
|||||||||||||
|MD300HFR120B3S|1200|300|6.5|0.1 00|B3.7/43|||||||
|||||||||||||
|MD400HFR120B3S|1200|400|4.4|0.074|B3.7/43|||||||
|MD200HFR170B3S|1700|200|8.7
|0.058|B3.7/43|||||||
|MD250HFR170B3S|1700|250|10.4
|0.069|B3.7/43|||||||
## SiC Mosfet Modules Package Outlines
**==> picture [48 x 9] intentionally omitted <==**
**----- Start of picture text -----**
Case C2.0
**----- End of picture text -----**
**==> picture [47 x 8] intentionally omitted <==**
**----- Start of picture text -----**
Case B3.7
**----- End of picture text -----**
STARPOWER SEMICONDUCTOR LTD.
## Sintering Process For High Reliability Sintering Process For High Reliability
## Features and Benefits Features and Benefits
- Chip mounting by sinter interconnects - Chip mounting by sinter interconnects
- Increased operation temperature to 175 °C - Increased operation temperature to 175 °C
- Increased thermal and power cycling capabilities - Increased thermal and power cycling capabilities
- Low thermal resistance - Low thermal resistance
- Better suited for high reliability, such as EV/HEV applications - Better suited for high reliability, such as EV/HEV applications
## StarPower Locations
**==> picture [168 x 47] intentionally omitted <==**
**----- Start of picture text -----**
Switzerland
WuhanBeijing◆ ◆◆Qingdao
Jinan◆
Chengdu◆Nanjing◆
Jiaxing▲ Shanghai
◆Shenzhen
**----- End of picture text -----**
▲Headquarter
StarPower Europe AG Shanghai Dos Technologies Ltd. Sales Offices
988 Kexing Road, Jiaxing, China 314006 www.powersemi.com
## Beijing Office
## Shenzhen Office
Tel: +86 10-57236290 Fax: +86 10-88696821
Tel: +86 573 82585600 Fax: +86 573 82585776
## Jinan Office
## Qingdao Office
Tel: +86 532 68982978 Fax: +86 532 68982978
Tel: +86 531 55504712 Fax: +86 531 55504712
Tel: +86 573 82585600
## Nanjing Office
Tel: +86 25 84937665 Fax: +86 25 84937665
## Wuhan Office
Tel: +86 27 88739616 Fax: +86 27 88739606
Fax: +86 573 82585601
## Chengdu Office
Tel: +86 28 84544069 Fax: +86 28 84544069
## StarPower Europe AG
Ai Ciòss, CH - 6593 Cadenazzo, Switzerland www.starpowereurope.com
Tel: +41 91 8504141
Fax: +41 91 8401909
## Links
- [View this product on Novapart](https://novapart.co/products/GD1200SGX170C3SN/igbt-module-single-12-ka-185-v-150-c)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/starpower/gd1200sgx170c3sn/igbt-module-1-7kv-1-2ka/dp/3912083)
---
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