# IGBT Module, PIM Three Phase Input Rectifier, 20 A, 1.65 V, 91 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:4076231/)

**URL**: https://novapart.co/products/GD10PJY120F1S/igbt-module-pim-three-phase-input-rectifier-20-a
**SKU**: GD10PJY120F1S
**Manufacturer**: STARPOWER
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €19.3600
**Stock**: 10+
**Lead Time**: 162 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| Product Range | - |
| Igbt Technology | Trench Field Stop |
| Igbt Termination | Solder |
| Power Dissipation | 91W |
| Igbt Configuration | PIM Three Phase Input Rectifier |
| Transistor Mounting | Module |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 20A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 1.65V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4076231/)

GD10PJY120F1S                                                                   IGBT Module 

## **STARPOWER** 

## **SEMICONDUCTOR                                              IGBT** 

## **GD10PJY120F1S** 

## **1200V/10A PIM in one-package** 

## **General Description** 

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. 

## **Features** 

- Low VCE(sat) Trench IGBT technology 

- 10μs short circuit capability 

- VCE(sat) with positive temperature coefficient 

- Maximum junction temperature 175[o] C 

- Low inductance case 

- Fast & soft reverse recovery anti-parallel FWD 

- Isolated heatsink using DBC technology 

## **Typical Applications** 

- Inverter for motor drive 

- AC and DC servo drive amplifier 

- Uninterruptible power supply 

## **Equivalent Circuit Schematic** 

©2015 STARPOWER Semiconductor Ltd.         11/24/2015         1/12     Preliminary 

GD10PJY120F1S                                                                   IGBT Module 

## **Absolute Maximum Ratings** TC=25[o] C unless otherwise noted 

## **IGBT-inverter** 

|**Symbol**|**Description**|**Value**|**Unit**|
|---|---|---|---|
|VCES|Collector-EmitterVoltage|1200|V|
|VGES|Gate-Emitter Voltage|±20|V|
|IC|Collector Current  @ TC=25~~o~~C<br>@TC=100oC|20<br>10|A|
|ICM|Pulsed CollectorCurrent  tp=1ms|20|A|
|PD|Maximum Power Dissipation@Tj=175~~o~~C|91|W|



## **Diode-inverter** 

|**Symbol**|**Description**|**Value**|**Unit**|
|---|---|---|---|
|VRRM|RepetitivePeak Reverse Voltage|1200|V|
|IF|Diode Continuous Forward Current|10|A|
|IFM|DiodeMaximum Forward Current  tp=1ms|20|A|



## **Diode-rectifier** 

|**Symbol**|**Description**|**Value**|**Unit**|
|---|---|---|---|
|VRRM|Repetitive Peak Reverse Voltage|1600|V|
|IO|Average OutputCurrent50Hz/60Hz,sine wave|10|A|
|IFSM|Surge Forward Current  VR=0V,tp=10ms,Tj=45~~o~~C|270|A|
|I~~2~~t|I~~2~~t-value,VR=0V,tp=10ms,Tj=45~~o~~C|360|A~~2~~s|



## **IGBT-brake** 

|**Symbol**|**Description**|**Value**|**Unit**|
|---|---|---|---|
|VCES|Collector-Emitter Voltage|1200|V|
|VGES|Gate-EmitterVoltage|±20|V|
|IC|Collector Current  @ TC=25~~o~~C<br>@TC=100oC|20<br>10|A|
|ICM|Pulsed Collector Current  tp=1ms|20|A|
|PD|Maximum Power Dissipation@Tj=175~~o~~C|91|W|



## **Diode-brake** 

|**Symbol**|**Description**|**Value**|**Unit**|
|---|---|---|---|
|VRRM|Repetitive Peak Reverse Voltage|1200|V|
|IF|Diode ContinuousForward Current|10|A|
|IFM|Diode Maximum Forward Current  tp=1ms|20|A|



## **Module** 

|**Module**||||
|---|---|---|---|
|**Symbol**|**Description**|**Value**|**Unit**|
|Tjmax|Maximum Junction Temperature(inverter,brake)<br>Maximum Junction Temperature(rectifier)|175<br>150|oC|
|Tjop|Operating Junction Temperature|-40to+150|~~o~~C|
|TSTG|Storage Temperature Range|-40 to +125|~~o~~C|
|VISO|IsolationVoltageRMS,f=50Hz,t=1min|4000|V|



©2015 STARPOWER Semiconductor Ltd.         11/24/2015         2/12     Preliminary 

## **IGBT-inverter Characteristics** TC=25[o] C unless otherwise noted 

|**Symbol **|**Parameter **|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VCE(sat)|Collector to Emitter<br>Saturation Voltage|IC=10A,VGE=15V,<br>Tj=25oC||1.65|2.10|V|
|||IC=10A,VGE=15V,<br>Tj=125oC||1.95|||
|||IC=10A,VGE=15V,<br>Tj=150oC||2.00|||
|VGE(th)|Gate-Emitter Threshold<br>Voltage|IC=0.25mA,VCE=VGE,<br>Tj=25oC|5.2|6.0|6.8|V|
|ICES|Collector Cut-Off<br>Current|VCE=VCES,VGE=0V,<br>Tj=25oC|||1.0|mA|
|IGES|Gate-Emitter Leakage<br>Current|VGE=VGES,VCE=0V,<br>Tj=25oC|||400|nA|
|RGint|InternalGateResistance|||0||Ω|
|td(on)|Turn-On DelayTime|VCC=600V,IC=10A,<br>RG=47Ω,VGE=±15V,<br>Tj=25oC||48||ns|
|tr|RiseTime|||47||ns|
|td(off)|Turn-Off DelayTime|||185||ns|
|tf|Fall Time|||170||ns|
|Eon|Turn-On Switching<br>Loss|||0.96||mJ|
|Eoff|Turn-Off Switching<br>Loss|||0.57||mJ|
|td(on)|Turn-On DelayTime|VCC=600V,IC=10A,<br>RG=47Ω,VGE=±15V,<br>Tj=125oC||48||ns|
|tr|RiseTime|||65||ns|
|td(off)|Turn-Off DelayTime|||252||ns|
|tf|Fall Time|||221||ns|
|Eon|Turn-On Switching<br>Loss|||1.44||mJ|
|Eoff|Turn-Off Switching<br>Loss|||0.82||mJ|
|td(on)|Turn-On DelayTime|VCC=600V,IC=10A,<br>RG=47Ω,VGE=±15V,<br>Tj=150oC||48||ns|
|tr|Rise Time|||67||ns|
|td(off)|Turn-Off DelayTime|||283||ns|
|tf|Fall Time|||232||ns|
|Eon|Turn-On Switching<br>Loss|||1.66||mJ|
|Eoff|Turn-Off Switching<br>Loss|||0.90||mJ|
|ISC|SC Data|tP≤10μs,VGE=15V,<br>Tj=150oC,VCC=800V,<br>VCEM≤1200V||40||A|



©2015 STARPOWER Semiconductor Ltd.         11/24/2015         3/12     Preliminary 

## **Diode-inverter Characteristics** TC=25[o] C unless otherwise noted 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VF|Diode Forward<br>Voltage|IF=10A,VGE=0V,Tj=25~~o~~C||1.85|2.30|V|
|||IF=10A,VGE=0V,Tj=125~~o~~C||2.05|||
|||IF=10A,VGE=0V,Tj=150~~o~~C||2.10|||
|Qr|Recovered Charge|VR=600V,IF=10A,<br>-di/dt=500A/μs,VGE=-15V<br>Tj=25oC||0.86||μC|
|IRM|Peak Reverse<br>RecoveryCurrent|||8||A|
|Erec|Reverse Recovery<br>Energy|||0.23||mJ|
|Qr|Recovered Charge|VR=600V,IF=10A,<br>-di/dt=500A/μs,VGE=-15V<br>Tj=125oC||1.6||μC|
|IRM|Peak Reverse<br>Recovery Current|||10||A|
|Erec|Reverse Recovery<br>Energy|||0.49||mJ|
|Qr|Recovered Charge|VR=600V,IF=10A,<br>-di/dt=500A/μs,VGE=-15V<br>Tj=150oC||1.8||μC|
|IRM|Peak Reverse<br>Recovery Current|||11||A|
|Erec|Reverse Recovery<br>Energy|||0.56||mJ|



## **Diode-rectifier Characteristics** TC=25[o] C unless otherwise noted 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VF|Diode Forward<br>Voltage|IF=10A,Tj=150oC||0.88||V|
|IR|Reverse Current|Tj=150~~o~~C,VR=1600V|||1.0|mA|



©2015 STARPOWER Semiconductor Ltd.         11/24/2015         4/12     Preliminary 

## **IGBT-brake Characteristics** TC=25[o] C unless otherwise noted 

|**Symbol **|**Parameter **|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VCE(sat)|Collector to Emitter<br>Saturation Voltage|IC=10A,VGE=15V,<br>Tj=25oC||1.65|2.10|V|
|||IC=10A,VGE=15V,<br>Tj=125oC||1.95|||
|||IC=10A,VGE=15V,<br>Tj=150oC||2.00|||
|VGE(th)|Gate-Emitter Threshold<br>Voltage|IC=0.25mA,VCE=VGE,<br>Tj=25oC|5.2|6.0|6.8|V|
|ICES|Collector Cut-Off<br>Current|VCE=VCES,VGE=0V,<br>Tj=25oC|||1.0|mA|
|IGES|Gate-Emitter Leakage<br>Current|VGE=VGES,VCE=0V,<br>Tj=25oC|||400|nA|
|RGint|InternalGateResistance|||0||Ω|
|td(on)|Turn-On DelayTime|VCC=600V,IC=10A,<br>RG=47Ω,VGE=±15V,<br>Tj=25oC||48||ns|
|tr|RiseTime|||47||ns|
|td(off)|Turn-Off DelayTime|||185||ns|
|tf|Fall Time|||170||ns|
|Eon|Turn-On Switching<br>Loss|||0.96||mJ|
|Eoff|Turn-Off Switching<br>Loss|||0.57||mJ|
|td(on)|Turn-On DelayTime|VCC=600V,IC=10A,<br>RG=47Ω,VGE=±15V,<br>Tj=125oC||48||ns|
|tr|RiseTime|||65||ns|
|td(off)|Turn-Off DelayTime|||252||ns|
|tf|Fall Time|||221||ns|
|Eon|Turn-On Switching<br>Loss|||1.44||mJ|
|Eoff|Turn-Off Switching<br>Loss|||0.82||mJ|
|td(on)|Turn-On DelayTime|VCC=600V,IC=10A,<br>RG=47Ω,VGE=±15V,<br>Tj=150oC||48||ns|
|tr|Rise Time|||67||ns|
|td(off)|Turn-Off DelayTime|||283||ns|
|tf|Fall Time|||232||ns|
|Eon|Turn-On Switching<br>Loss|||1.66||mJ|
|Eoff|Turn-Off Switching<br>Loss|||0.90||mJ|
|ISC|SC Data|tP≤10μs,VGE=15V,<br>Tj=150oC,VCC=800V,<br>VCEM≤1200V||40||A|



©2015 STARPOWER Semiconductor Ltd.         11/24/2015         5/12     Preliminary 

**Diode-brake Characteristics** TC=25[o] C unless otherwise noted 

**==> picture [427 x 248] intentionally omitted <==**

**----- Start of picture text -----**<br>
Symbol Parameter Test Conditions Min. Typ. Max. Unit<br>Diode Forward IF=10A,VGE=0V,Tj=25 [o] C 1.85 2.30<br>VF Voltage IIFF=10A=10A,,VVGEGE=0V=0V,,TTjj=125=150 [o][o] CC 2.052.10 V<br>Qr Recovered Charge 0.86 μC<br>Peak Reverse  VR=600V,IF=10A,<br>IRM Recovery Current -di/dt=500A/μs,VGE=-15V 8 A<br>Erec Reverse RecoveryEnergy Tj=25 [o] C 0.23 mJ<br>Qr Recovered Charge 1.6 μC<br>Peak Reverse VR=600V,IF=10A,<br>IRM Recovery Current -di/dt=500A/μs,VGE=-15V 10 A<br>Erec Reverse RecoveryEnergy Tj=125 [o] C 0.49  mJ<br>Qr Recovered Charge 1.8 μC<br>Peak Reverse VR=600V,IF=10A,<br>IRM Recovery Current -di/dt=500A/μs,VGE=-15V 11 A<br>Erec Reverse RecoveryEnergy Tj=150 [o] C 0.56 mJ<br>**----- End of picture text -----**<br>


## **NTC Characteristics** TC=25[o] C unless otherwise noted 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|R25|RatedResistance|||22.0||kΩ|
|∆R/R|Deviation of R100|TC=100~~o~~C,R100=1486.1Ω|-5||5|%|
|P25|Power Dissipation||||200|mW|
|B25/50|B-value|R2=R25exp[B25/50(1/T2-<br>1/(298.15K))]||4000||K|



**Module Characteristics** TC=25[o] C unless otherwise noted 

|**Symbol**|**Parameter**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|
|RthJC|Junction-to-Case (per IGBT-inverter)<br>Junction-to-Case (per Diode-inverter)<br>Junction-to-Case (per Diode-rectifier)<br>Junction-to-Case (per IGBT-brake)<br>Junction-to-Case (per Diode-brake)||1.488<br>2.074<br>1.471<br>1.488<br>2.074|1.637<br>2.281<br>1.618<br>1.637<br>2.281|K/W|
|RthCH|Case-to-Heatsink (per IGBT-inverter)<br>Case-to-Heatsink (per Diode-inverter)<br>Case-to-Heatsink (per Diode-rectifier)<br>Case-to-Heatsink (per IGBT-brake)<br>Case-to-Heatsink (per Diode-brake)<br>Case-to-Sink(per Module)||0.651<br>0.908<br>0.644<br>0.651<br>0.908<br>0.036||K/W|
|M|MountingTorque,Screw M4|2.0||2.2|N.m|
|G|Weightof Module||26||g|



©2015 STARPOWER Semiconductor Ltd.         11/24/2015         6/12     Preliminary 

GD10PJY120F1S                                                                   IGBT Module 

**==> picture [513 x 657] intentionally omitted <==**

**----- Start of picture text -----**<br>
20 20<br>VGE=15V  VCE=20V<br>16 16<br>12 12<br>8 8<br>4 4<br>Tj=25℃ Tj=25℃<br>Tj=125℃ Tj=125℃<br>Tj=150℃ Tj=150℃<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 5 6 7 8 9 10 11 12 13<br>VCE  [V]  VGE [V]<br>Fig 1. IGBT-inverter Output Characteristics               Fig 2. IGBT-inverter Transfer Characteristics<br>5 8<br>Eon Tj=125℃ Eon Tj=125℃<br>4.5<br>Eoff Tj=125℃ 7 Eoff Tj=125℃<br>Eon Tj=150℃ Eon Tj=150℃<br>4<br>Eoff Tj=150℃ 6 Eoff Tj=150℃<br>3.5<br>3 RVGCC=47Ω =600V  5 VICCC=10A =600V<br>VGE= ± 15V  VGE= ± 15V<br>2.5 4<br>2<br>3<br>1.5<br>2<br>1<br>1<br>0.5<br>0 0<br>0 4 8 12 16 20 0 100 200 300 400 500<br>IC [A]  RG [Ω]<br> [A]   [A]<br>C C<br>I I<br>E [mJ]  E [mJ]<br>**----- End of picture text -----**<br>


Fig 3. IGBT-inverter Switching Loss vs. IC                Fig 4. IGBT-inverter Switching Loss vs. RG 

©2015 STARPOWER Semiconductor Ltd.         11/24/2015         7/12     Preliminary 

GD10PJY120F1S                                                                   IGBT Module 

**==> picture [513 x 658] intentionally omitted <==**

**----- Start of picture text -----**<br>
25 10<br>Module<br>IGBT<br>20<br>1<br>15<br>10<br>0.1<br>5 RG=47Ω  i:                1            2            3            4<br>VGE= ± 15V  rτii[K/W]:   0.1209   0.7099   0.6851   0.6231 [s]:          0.01       0.02       0.05       0.1<br>T =150 [o] C<br>j<br>0 0.01<br>0 200 400 600 800 1000 1200 1400 0.001 0.01 0.1 1 10<br>VCE [V]  t [s]<br>Fig 5. IGBT-inverter RBSOA                      Fig 6. IGBT-inverter Transient Thermal Impedance<br>20 0.8<br>Tj=25℃ Erec Tj=125℃<br>Tj=125℃<br>Tj=150℃ Erec Tj=150℃<br>16<br>0.6<br>12<br>0.4<br>8<br>0.2 VCC=600V<br>4 RG=47Ω<br>VGE=-15V<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 0 4 8 12 16 20<br>VF  [V]  IF [A]<br> [A]   [K/W]<br>C<br>I<br>thJH<br>Z<br> [A]<br>F<br>I<br>E [mJ]<br>**----- End of picture text -----**<br>


Fig 7. Diode-inverter Forward Characteristics Fig 8. Diode-inverter Switching Loss vs. IF ©2015 STARPOWER Semiconductor Ltd.         11/24/2015         8/12     Preliminary 

GD10PJY120F1S                                                                   IGBT Module 

**==> picture [513 x 657] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.6 10<br>Erec Tj=125℃<br>Diode<br>Erec Tj=150℃<br>0.5<br>0.4 1<br>0.3<br>0.2 0.1<br>0.1 VIF=10A CC=600V  ri:                1            2            3            4 τii[K/W]:   0.1767   0.9830   0.9553   0.8670 [s]:          0.01       0.02       0.05       0.1<br>VGE=-15V<br>0 0.01<br>0 100 200 300 400 500 0.001 0.01 0.1 1 10<br>RG [Ω]  t [s]<br>Fig 9. Diode-inverter Switching Loss vs. RG         Fig 10. Diode-inverter Transient Thermal Impedance<br>20 20<br>VGE=15V<br>16 16<br>12 12<br>150 [o] C<br>8 8<br>25 [o] C<br>4 4<br>Tj=25℃<br>Tj=125℃<br>Tj=150℃<br>0 0<br>0.5 0.7 0.9 1.1 1.3 0 0.5 1 1.5 2 2.5 3 3.5<br>VF  [V]  VCE  [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A]   [A]<br>F C<br>I I<br>**----- End of picture text -----**<br>


G         Fig 10. Diode-inverter Transient Thermal Impedance          Fig 10. Diode-inverter Transient Thermal Impedance 

**==> picture [484 x 12] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig 11. Diode-rectifier Forward Characteristics                Fig 12. IGBT-brake Output Characteristics<br>**----- End of picture text -----**<br>


**==> picture [412 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
©2015 STARPOWER Semiconductor Ltd.         11/24/2015         9/12     Preliminary<br>**----- End of picture text -----**<br>


GD10PJY120F1S                                                                   IGBT Module 

**==> picture [513 x 314] intentionally omitted <==**

**----- Start of picture text -----**<br>
20 100<br>Tj=25℃<br>Tj=125℃<br>Tj=150℃<br>16<br>10<br>12<br>8<br>1<br>4<br>0 0.1<br>0 0.5 1 1.5 2 2.5 3 3.5 0 30 60 90 120 150<br>VF  [V]  TC [ [o] C]<br> [A]<br>F<br>I R [kΩ]<br>**----- End of picture text -----**<br>


Fig 13. Diode-brake Forward Characteristics                   Fig 14. NTC Temperature Characteristic 

©2015 STARPOWER Semiconductor Ltd.         11/24/2015         10/12     Preliminary 

GD10PJY120F1S                                                                   IGBT Module 

## **Circuit Schematic** 

**==> picture [393 x 121] intentionally omitted <==**

**----- Start of picture text -----**<br>
19 18<br>12 14 16<br>1<br>21 22 23 20 13 15 17<br>2<br>4 10 8 6<br>3<br>5 11 9 7<br>**----- End of picture text -----**<br>


## **Package Dimensions** 

**==> picture [276 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
                                                        Dimensions in Millimeters<br>**----- End of picture text -----**<br>


**==> picture [97 x 85] intentionally omitted <==**

©2015 STARPOWER Semiconductor Ltd.         11/24/2015         11/12     Preliminary 

GD10PJY120F1S                                                                   IGBT Module 

## **Terms and Conditions of Usage** 

The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. 

This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. 

Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. 

Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. 

Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. 

If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. 

©2015 STARPOWER Semiconductor Ltd.         11/24/2015         12/12     Preliminary 



## Links

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- [Supplier page](https://es.farnell.com/starpower/gd10pjy120f1s/igbt-module-1-2kv-20a-91w/dp/4076231)
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