# IGBT Module, 155 A, 1.7 V, 500 W, 150 °C, Module
**URL**: https://novapart.co/products/GD100SGY120D6S/igbt-module-155-a-17-v-500-w-150-c
**SKU**: GD100SGY120D6S
**Manufacturer**: STARPOWER
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €16.6700
**Stock**: 10+
**Lead Time**: 162 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| Product Range | - |
| Igbt Technology | Trench |
| Igbt Termination | Stud |
| Power Dissipation | 500W |
| Igbt Configuration | - |
| Transistor Mounting | Panel |
| Dc Collector Current | 155A |
| Power Dissipation Pd | 500W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 155A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.7V |
| Collector Emitter Saturation Voltage Vce(On) | 1.7V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3813163/)
GD100SGY120D6S IGBT Module
## **STARPOWER**
## **SEMICONDUCTOR**
## **IGBT**
## **GD100SGY120D6S**
**1200V/100A 1 in one-package**
## **General Description**
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS.
## **Features**
- Low VCE(sat) Trench IGBT technology
- 10μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175[o] C
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
## **Typical Applications**
- Inverter for motor drive
- AC and DC servo drive amplifier
- Uninterruptible power supply
## **Equivalent Circuit Schematic**
©2020 STARPOWER Semiconductor Ltd. 12/14/2020 1/9 Preliminary
GD100SGY120D6S IGBT Module
## **Absolute Maximum Ratings** TC=25[o] C unless otherwise noted
## **IGBT**
|**IGBT**||||
|---|---|---|---|
|**Symbol **|**Description **|**Value**|**Unit**|
|VCES|Collector-EmitterVoltage|1200|V|
|VGES|Gate-Emitter Voltage|±20|V|
|IC|Collector Current @ TC=25oC
@TC=95oC|155
100|A|
|ICM|Pulsed CollectorCurrent tp=1ms|200|A|
|PD|Maximum Power Dissipation@Tj=175oC|500|W|
|**Diode**||||
|**Symbol **|**Description **|**Value**|**Unit**|
|VRRM|RepetitivePeak Reverse Voltage|1200|V|
|IF|Diode Continuous Forward Current|100|A|
|IFM|DiodeMaximum Forward Current tp=1ms|200|A|
## **Module**
|**Module**||||
|---|---|---|---|
|**Symbol**|**Description**|**Value**|**Unit**|
|Tjmax|Maximum Junction Temperature|175|oC|
|Tjop|Operating Junction Temperature|-40to+150|oC|
|TSTG|Storage Temperature Range|-40 to +125|oC|
|VISO|Isolation Voltage RMS,f=50Hz,t=1min|4000|V|
©2020 STARPOWER Semiconductor Ltd. 12/14/2020 2/9 Preliminary
**IGBT Characteristics** TC=25[o] C unless otherwise noted
|**IGBT**|**Characteristics**TC|=25oC unless otherwise n|oted||||
|---|---|---|---|---|---|---|
|**Symbol **|**Parameter **|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|VCE(sat)|Collector to Emitter
Saturation Voltage|IC=100A,VGE=15V,
Tj=25oC||1.70|2.15|V|
|||IC=100A,VGE=15V,
Tj=125oC||1.95|||
|||IC=100A,VGE=15V,
Tj=150oC||2.00|||
|VGE(th)|Gate-Emitter Threshold
Voltage|IC=2.5mA,VCE=VGE,
Tj=25oC|5.2|6.0|6.8|V|
|ICES|Collector Cut-Off
Current|VCE=VCES,VGE=0V,
Tj=25oC|||1.0|mA|
|IGES|Gate-Emitter Leakage
Current|VGE=VGES,VCE=0V,
Tj=25oC|||400|nA|
|RGint|InternalGateResistance|||7.5||Ω|
|Cies|Input Capacitance|VCE=25V,f=1MHz,
VGE=0V||10.4||nF|
|Cres|Reverse Transfer
Capacitance|||0.29||nF|
|QG|Gate Charge|VGE=-15﹍+15V||0.78||μC|
|td(on)|Turn-On DelayTime|VCC=600V,IC=100A,
RG=1.6Ω,VGE=±15V,
Tj=25oC||170||ns|
|tr|Rise Time|||32||ns|
|td(off)|Turn-Off DelayTime|||360||ns|
|tf|Fall Time|||86||ns|
|Eon|Turn-On Switching
Loss|||5.90||mJ|
|Eoff|Turn-Off Switching
Loss|||6.05||mJ|
|td(on)|Turn-On DelayTime|VCC=600V,IC=100A,
RG=1.6Ω,VGE=±15V,
Tj=125oC||180||ns|
|tr|RiseTime|||42||ns|
|td(off)|Turn-Off DelayTime|||470||ns|
|tf|Fall Time|||165||ns|
|Eon|Turn-On Switching
Loss|||9.10||mJ|
|Eoff|Turn-Off Switching
Loss|||9.35||mJ|
|td(on)|Turn-On DelayTime|VCC=600V,IC=100A,
RG=1.6Ω,VGE=±15V,
Tj=150oC||181||ns|
|tr|RiseTime|||43||ns|
|td(off)|Turn-Off DelayTime|||480||ns|
|tf|Fall Time|||186||ns|
|Eon|Turn-On Switching
Loss|||10.0||mJ|
|Eoff|Turn-Off Switching
Loss|||10.5||mJ|
|ISC|SC Data|tP≤10μs,VGE=15V,
Tj=150oC,VCC=900V,
VCEM≤1200V||400||A|
©2020 STARPOWER Semiconductor Ltd. 12/14/2020 3/9 Preliminary
GD100SGY120D6S IGBT Module
**Diode Characteristics** TC=25[o] C unless otherwise noted
|**Symbol **|**Parameter **|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|---|---|
|VF|Diode Forward
Voltage|IF=100A,VGE=0V,Tj=25oC||1.70|2.15|V|
|||IF=100A,VGE=0V,Tj=125oC||1.65|||
|||IF=100A,VGE=0V,Tj=150oC||1.65|||
|Qr|Recovered
Charge|VR=600V,IF=100A,
-di/dt=2800A/μs,VGE=-15V
Tj=25oC||9.0||μC|
|IRM|Peak Reverse
Recovery Current|||110||A|
|Erec|Reverse Recovery
Energy|||3.32||mJ|
|Qr|Recovered
Charge|VR=600V,IF=100A,
-di/dt=2800A/μs,VGE=-15V
Tj=125oC||16.2||μC|
|IRM|Peak Reverse
Recovery Current|||120||A|
|Erec|Reverse Recovery
Energy|||5.70||mJ|
|Qr|Recovered
Charge|VR=600V,IF=100A,
-di/dt=2800A/μs,VGE=-15V
Tj=150oC||19.5||μC|
|IRM|Peak Reverse
Recovery Current|||123||A|
|Erec|Reverse Recovery
Energy|||7.13||mJ|
**Module Characteristics** TC=25[o] C unless otherwise noted
|**Symbol**|**Parameter**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|
|RthJC|Junction-to-Case (per IGBT)
Junction-to-Case(per Diode)|||0.300
0.510|K/W|
|RthCH|Case-to-Heatsink (per IGBT)
Case-to-Heatsink (per Diode)
Case-to-Heatsink(per Module)||0.238
0.405
0.150||K/W|
|M|Terminal Connection Torque, Screw M4
MountingTorque, ScrewM4|1.1
1.1||1.5
1.5|N.m|
|G|Weight of Module||35||g|
©2020 STARPOWER Semiconductor Ltd. 12/14/2020 4/9 Preliminary
GD100SGY120D6S IGBT Module
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200 200
175 VGE=15V 175
VCE=20V
150 150
125 125
100 100
75 75
50 50
Tj=25℃
Tj=25℃
25 Tj=125℃ 25
Tj=125℃
Tj=150℃
Tj=150℃
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 5 6 7 8 9 10 11 12 13
VCE [V] VGE [V]
Fig 1. IGBT Output Characteristics Fig 2. IGBT Transfer Characteristics
35 25
Eon Tj=125℃ Eon Tj=125℃
Eoff Tj=125℃ Eoff Tj=125℃
30
Eon Tj=150℃ Eon Tj=150℃
20
Eoff Tj=150℃ Eoff Tj=150℃
25
VCC=600V
20 RG=1.6Ω 15
VGE=±15V
15
10
10
5 VCC=600V
5 IC=100A
VGE=±15V
0 0
0 25 50 75 100 125 150 175 200 0 4 8 12 16
IC [A] RG [Ω]
Fig 3. IGBT Switching Loss vs. IC Fig 4. IGBT Switching Loss vs. RG
[A] [A]
C C
I I
E [mJ] E [mJ]
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**----- Start of picture text -----**
©2020 STARPOWER Semiconductor Ltd. 12/14/2020 5/9 Preliminary
**----- End of picture text -----**
GD100SGY120D6S IGBT Module
**==> picture [513 x 680] intentionally omitted <==**
**----- Start of picture text -----**
220 1
200
Module
180
IGBT
160
140
120
0.1
100
80
60
40 RG=1.6Ω i: 1 2 3 4
VGE=±15V rτii[K/W]: 0.0180 0.0990 0.0960 0.0870 [s]: 0.01 0.02 0.05 0.1
20 Tj=150 [o] C
0 0.01
0 350 700 1050 1400 0.001 0.01 0.1 1 10
VCE [V] t [s]
Fig 5. RBSOA Fig 6. IGBT Transient Thermal Impedance
200 9
Tj=25℃ Erec Tj=125℃
Tj=125℃ 8
175
Erec Tj=150℃
Tj=150℃
7
150
6
125
5
100
4
75
3
50 2 VCC=600V
RG=1.6Ω
25 VGE=-15V
1
0 0
0 0.5 1 1.5 2 2.5 0 25 50 75 100 125 150 175 200
VF [V] IF [A]
Fig 7. Diode Forward Characteristics Fig 8. Diode Switching Loss vs. IF
[A] [K/W]
C
I
thJC
Z
[A]
F
I E [mJ]
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©2020 STARPOWER Semiconductor Ltd. 12/14/2020 6/9 Preliminary
GD100SGY120D6S IGBT Module
**==> picture [513 x 314] intentionally omitted <==**
**----- Start of picture text -----**
8 1
Erec Tj=125℃ Diode
7 Erec Tj=150℃
6
5
0.1
4
3
VCC=600V i: 1 2 3 4
2 IF=100A rτii[K/W]: 0.0306 0.1684 0.1632 0.1478 [s]: 0.01 0.02 0.05 0.1
VGE=-15V
1 0.01
0 4 8 12 16 0.001 0.01 0.1 1 10
RG [Ω] t [s]
[K/W]
E [mJ]
thJC
Z
**----- End of picture text -----**
Fig 9. Diode Switching Loss vs. RG Fig 10. Diode Transient Thermal Impedance
©2020 STARPOWER Semiconductor Ltd. 12/14/2020 7/9 Preliminary
GD100SGY120D6S IGBT Module
**==> picture [420 x 190] intentionally omitted <==**
**----- Start of picture text -----**
Circuit Schematic
3
2
1
4
Package Dimensions
Dimensions in Millimeters
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**==> picture [116 x 91] intentionally omitted <==**
©2020 STARPOWER Semiconductor Ltd. 12/14/2020 8/9 Preliminary
GD100SGY120D6S IGBT Module
## **Terms and Conditions of Usage**
The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application.
This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics.
Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify.
If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved.
©2020 STARPOWER Semiconductor Ltd. 12/14/2020 9/9 Preliminary
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- [Supplier page](https://es.farnell.com/starpower/gd100sgy120d6s/igbt-module-1-2kv-155a-500w/dp/3813163)
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