# IGBT Module, Half Bridge, 154 A, 2.9 V, 791 W, 125 °C, Module

![Product image](https://novapart.co/image/farnell:3912069/)

**URL**: https://novapart.co/products/GD100HFU120C8S/igbt-module-half-bridge-154-a-29-v-791-w-125-c
**SKU**: GD100HFU120C8S
**Manufacturer**: STARPOWER
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €31.9600
**Stock**: 10+

## Description

Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| Product Range | - |
| Igbt Technology | NPT IGBT [Standard] |
| Igbt Termination | Stud |
| Power Dissipation | 791W |
| Igbt Configuration | Half Bridge |
| Transistor Mounting | Panel |
| Dc Collector Current | 154A |
| Power Dissipation Pd | 791W |
| Transistor Case Style | Module |
| Operating Temperature Max | 125°C |
| Junction Temperature Tj Max | 125°C |
| Continuous Collector Current | 154A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 2.9V |
| Collector Emitter Saturation Voltage Vce(On) | 2.9V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3912069/)

GD100HFU120C8S                                                               IGBT Module 

## **STARPOWER** 

**IGBT** 

**SEMICONDUCTOR** 

## **GD100HFU120C8S** 

**1200V/100A 2 in one-package** 

## **General Description** 

STARPOWER IGBT Power Module provides ultrafast switching speed as well as short circuit ruggedness. It’s designed for the applications such as electronic welder and inductive heating. 

## **Features** 

- NPT IGBT technology 

- 10μs short circuit capability 

- Low switching losses 

- Rugged with ultrafast performance 

- VCE(sat) with positive temperature coefficient 

- Fast & soft reverse recovery anti-parallel FWD 

- Isolated copper baseplate using DBC technology 

## **Typical Applications** 

- Switching mode power supply 

- Inductive heating 

- Electronic welder 

## **Equivalent Circuit Schematic** 

©2015 STARPOWER Semiconductor Ltd.             3/8/2015             1/9              DX01 

GD100HFU120C8S                                                               IGBT Module 

## **Absolute Maximum Ratings** TC=25[o] C unless otherwise noted 

## **IGBT** 

|**IGBT**||||
|---|---|---|---|
|**Symbol**|**Description**|**Value**|**Unit**|
|VCES|Collector-EmitterVoltage|1200|V|
|VGES|Gate-Emitter Voltage|±20|V|
|IC|Collector Current  @ TC=25~~o~~C<br>@ TC=80oC|154<br>100|A|
|ICM|PulsedCollectorCurrent  tp=1ms|200|A|
|PD|Maximum Power Dissipation  @ Tj=175~~o~~C|791|W|



## **Diode** 

|**Diode**||||
|---|---|---|---|
|**Symbol**|**Description**|**Value**|**Unit**|
|VRRM|Repetitive Peak ReverseVoltage|1200|V|
|IF|Diode Continuous Forward Current|100|A|
|IFM|Diode Maximum ForwardCurrent  tp=1ms|200|A|



## **Module** 

|**Module**||||
|---|---|---|---|
|**Symbol**|**Description**|**Value**|**Unit**|
|Tjmax|Maximum Junction Temperature|150|~~o~~C|
|Tjop|Operating Junction Temperature|-40to +125|~~o~~C|
|TSTG|Storage Temperature Range|-40 to +125|~~o~~C|
|VISO|Isolation Voltage  RMS,f=50Hz,t=1min|4000|V|



©2015 STARPOWER Semiconductor Ltd.             3/8/2015             2/9              DX01 

**IGBT Characteristics** TC=25[o] C unless otherwise noted 

|**IGBT**|**Characteristics**TC|=25oC unless otherwise n|oted||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|VCE(sat)|Collector to Emitter<br>Saturation Voltage|IC=100A,VGE=15V,<br>Tj=25oC||2.90|3.35|V|
|||IC=100A,VGE=15V,<br>Tj=125oC||3.60|||
|VGE(th)|Gate-Emitter Threshold<br>Voltage|IC=2.0mA,VCE=VGE,<br>Tj=25oC|4.5|5.5|6.5|V|
|ICES|Collector Cut-Off<br>Current|VCE=VCES,VGE=0V,<br>Tj=25oC|||5.0|mA|
|IGES|Gate-Emitter Leakage<br>Current|VGE=VGES,VCE=0V,<br>Tj=25oC|||400|nA|
|RGint|InternalGate Resistance|||1.25||Ω|
|Cies|Input Capacitance|VCE=25V,f=1MHz,<br>VGE=0V||6.52||nF|
|Cres|Reverse Transfer<br>Capacitance|||0.41||nF|
|QG|GateCharge|VGE=-15…+15V||1.12||μC|
|td(on)|Turn-On DelayTime|VCC=600V,IC=100A,<br>RG=9.1Ω,VGE=±15V,<br>Tj=25oC||265||ns|
|tr|Rise Time|||66||ns|
|td(off)|Turn-Off DelayTime|||357||ns|
|tf|Fall Time|||124||ns|
|Eon|Turn-On Switching<br>Loss|||4.15||mJ|
|Eoff|Turn-Off Switching<br>Loss|||3.10||mJ|
|td(on)|Turn-On DelayTime|VCC=600V,IC=100A,<br>RG=9.1Ω,VGE=±15V,<br>Tj=125oC||270||ns|
|tr|Rise Time|||67||ns|
|td(off)|Turn-Off DelayTime|||368||ns|
|tf|Fall Time|||155||ns|
|Eon|Turn-On Switching<br>Loss|||5.86||mJ|
|Eoff|Turn-Off Switching<br>Loss|||4.45||mJ|
|ISC|SC Data|tP≤10μs,VGE=15V,<br>Tj=125oC,VCC=900V,<br>VCEM≤1200V||800||A|



©2015 STARPOWER Semiconductor Ltd.             3/8/2015             3/9              DX01 

**Diode Characteristics** TC=25[o] C unless otherwise noted 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VF|Diode Forward<br>Voltage|IF=100A,VGE=0V,Tj=25~~o~~C||1.95|2.40|V|
|||IF=100A,VGE=0V,Tj=125~~o~~C||2.00|||
|Qr|RecoveredCharge|VR=600V,IF=100A,<br>-di/dt=1550A/μs,VGE=-15V<br>Tj=25oC||6.83||μC|
|IRM|Peak Reverse<br>Recovery Current|||88.3||A|
|Erec|Reverse Recovery<br>Energy|||2.62||mJ|
|Qr|Recovered Charge|VR=600V,IF=100A,<br>-di/dt=1550A/μs,VGE=-15V<br>Tj=125oC||12.7||μC|
|IRM|Peak Reverse<br>RecoveryCurrent|||134||A|
|Erec|Reverse Recovery<br>Energy|||5.09||mJ|



**Module Characteristics** TC=25[o] C unless otherwise noted 

|**Symbol**|**Parameter**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|
|LCE|StrayInductance|||26|nH|
|RCC’+EE’|Module Lead Resistance,Terminal to Chip||0.62||mΩ|
|RthJC|Junction-to-Case (per IGBT)<br>Junction-to-Case(per Diode)|||0.158<br>0.271|K/W|
|RthCH|Case-to-Heatsink (per IGBT)<br>Case-to-Heatsink (per Diode)<br>Case-to-Heatsink(per Module)||0.146<br>0.250<br>0.046||K/W|
|M|Terminal Connection Torque, Screw M5<br>MountingTorque, ScrewM6|2.5<br>3.0||5.0<br>5.0|N.m|
|G|Weight of Module||200||g|



©2015 STARPOWER Semiconductor Ltd.             3/8/2015             4/9              DX01 

**==> picture [513 x 712] intentionally omitted <==**

**----- Start of picture text -----**<br>
200 200<br>180 VGE=15V  180 VCE=20V<br>160 160<br>140 140<br>25 [o] C<br>120 120<br>125 [o] C<br>100 125 [o] C  100<br>80 80 25 [o] C<br>60 60<br>40 40<br>20 20<br>0 0<br>0 1 2 3 4 5 6 6 7 8 9 10 11<br>VCE  [V]  VGE [V]<br>Fig 1. IGBT Output Characteristics                          Fig 2. IGBT Transfer Characteristics<br>16 50<br>VCC=600V  45 VCC=600V<br>14 RG=9.1Ω  IC=100A<br>VGE= ± 15V  40 VGE= ± 15V<br>12 Tj=125 [o] C  Tj=125 [o] C<br>35<br>10 Eon<br>30<br>8 25<br>Eon<br>6 Eoff  20<br>15<br>4<br>10<br>Eoff<br>2<br>5<br>0 0<br>0 25 50 75 100 125 150 175 200 0 13 26 39 52 65 78 91<br>IC [A]  RG [Ω]<br>Fig 3. IGBT Switching Loss vs. IC                              Fig 4. IGBT Switching Loss vs. RG<br>©2015 STARPOWER Semiconductor Ltd.             3/8/2015             5/9              DX01<br> [A]   [A]<br>C C<br>I I<br>E [mJ]  E [mJ]<br>**----- End of picture text -----**<br>


GD100HFU120C8S                                                               IGBT Module 

**==> picture [513 x 680] intentionally omitted <==**

**----- Start of picture text -----**<br>
250 1<br>Module<br>200 IGBT<br>0.1<br>150<br>100<br>0.01<br>RG=9.1Ω<br>50 VGE= ± 15V<br>i:                1            2            3            4<br>Tj=125 [o] C  rτii[K/W]:   0.0096   0.0520   0.0505   0.0459 [s]:          0.01       0.02       0.05       0.1<br>0 0.001<br>0 350 700 1050 1400 0.001 0.01 0.1 1 10<br>VCE [V]  t [s]<br>Fig 5. RBSOA                                       Fig 6. IGBT Transient Thermal Impedance<br>200 8<br>180<br>7<br>160<br>6<br>140 Erec<br>5<br>120<br>100 4<br>80<br>125 [o] C  3<br>60 VCC=600V<br>2 RG=9.1Ω<br>40 25 [o] C  VGE=-15V<br>1 Tj=125 [o] C<br>20<br>0 0<br>0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 150 175 200<br>VF  [V]  IF [A]<br>Fig 7. Diode Forward Characteristics    Fig 8. Diode Switching Loss vs. IF<br> [A]   [K/W]<br>C<br>I<br>thJC<br>Z<br> [A]<br>F<br>I E [mJ]<br>**----- End of picture text -----**<br>


©2015 STARPOWER Semiconductor Ltd.             3/8/2015             6/9              DX01 

GD100HFU120C8S                                                               IGBT Module 

**==> picture [513 x 314] intentionally omitted <==**

**----- Start of picture text -----**<br>
6 1<br>Diode<br>5<br>4 0.1<br>Erec<br>3<br>2 0.01<br>VCC=600V<br>IF=100A<br>1 VGE=-15V  i:                1            2            3            4<br>Tj=125 [o] C  rτii[K/W]:   0.0163   0.0894   0.0866   0.0787 [s]:          0.01       0.02       0.05       0.1<br>0 0.001<br>0 13 26 39 52 65 78 91 0.001 0.01 0.1 1 10<br>RG [Ω]  t [s]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


Fig 9. Diode Switching Loss vs. RG                      Fig 10. Diode Transient Thermal Impedance 

©2015 STARPOWER Semiconductor Ltd.             3/8/2015             7/9              DX01 

GD100HFU120C8S                                                               IGBT Module 

## **Circuit Schematic** 

## **Package Dimensions** 

Dimensions in Millimeters 

©2015 STARPOWER Semiconductor Ltd.             3/8/2015             8/9              DX01 

GD100HFU120C8S                                                               IGBT Module 

## **Terms and Conditions of Usage** 

The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. 

This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. 

Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. 

Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. 

Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. 

If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. 

©2015 STARPOWER Semiconductor Ltd.             3/8/2015             9/9              DX01 



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