# Silicon Carbide Schottky Diode, MPS, Dual Common Cathode, 1.2 kV, 80 A, 66 nC, TO-247

![Product image](https://novapart.co/image/farnell:2989885/)

**URL**: https://novapart.co/products/GC2X8MPS12-247/silicon-carbide-schottky-diode-mps-dual-common
**SKU**: GC2X8MPS12-247
**Manufacturer**: GENESIC
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €8.1300
**Stock**: 25+
**Lead Time**: 97 days (indicative)

## Description

Product Range:MPS Series; Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:80; Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (17-Dec-2015) |
| No. Of Pins | 3 Pin |
| Product Range | MPS |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-247 |
| Diode Configuration | Dual Common Cathode |
| Average Forward Current | 80A |
| Total Capacitive Charge | 66nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 1.2kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2989885/)

GC2X8MPS12-247 1200V 15A SiC Schottky MPS™ Diode 

**TM** 

## Silicon Carbide Schottky Diode 

VRRM = 1200 V IF (TC = 135°C) = 30 A * oe QC = 80 nC * 

## Features 

- Low VF for High Temperature Operation 

- Enhanced Surge and Avalanche Robustness 

- Superior Figure of Merit QC/IF 

- Low Thermal Resistance 

- Low Reverse Leakage Current 

- Temperature Independent Fast Switching 

- Positive Temperature Coefficient of VF 

- High dV/dt Ruggedness 

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Case<br>RoHS<br>TO-247-3 A K A REACH<br>**----- End of picture text -----**<br>


## Advantages 

- Improved System Efficiency 

- High System Reliability 

- Optimal Price Performance 

- Reduced Cooling Requirements 

- Increased System Power Density 

- Zero Reverse Recovery Current 

- Easy to Parallel without Thermal Runaway 

- Enables Extremely Fast Switching 

## Applications 

- Power Factor Correction (PFC) 

- Solar Inverters 

- Battery Chargers 

- High Frequency Converters 

- Switched Mode Power Supply (SMPS) 

- AC/DC Power Supplies 

- Anti-Parallel / Free-Wheeling Diode 

- LED and HID Lighting 

## Absolute Maximum Ratings (At Tc = 25°C Unless Otherwise Stated) 

|**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**Note**|
|---|
|Repetitive Peak Reverse Voltage (Per Leg)<br>V<br>1200<br>V<br>RRM|
|Continuous Forward Current (Per Leg / Per Device)<br>I <br>T = 100°C, D = 1<br>21 / 42<br>A<br>Fig. 4<br>T = 135°C, D = 1<br>15 / 30<br>T = 162°C, D = 1<br>7.5 / 15<br>F<br>C<br>C<br>C|
|Non-Repetitive Peak Forward Surge Current, Half Sine<br>Wave (Per Leg)<br>I<br>T = 25°C, t = 10 ms<br>75<br>A<br>T = 150°C, t = 10 ms<br>60<br>F,SM<br>C<br>P<br>C<br>P|
|Repetitive Peak Forward Surge Current, Half Sine Wave<br>(Per Leg)<br>I<br>T = 25°C, t = 10 ms<br>45<br>A<br>T = 150°C, t = 10 ms<br>32<br>F,RM<br>C<br>P<br>C<br>P|
|Non-Repetitive Peak Forward Surge Current (Per Leg)<br>I<br>T = 25°C, t = 10 µs<br>375<br>A<br>F,MAX<br>C<br>P|
|i t Value (Per Leg)<br>∫i dt<br>T = 25°C, t = 10 ms<br>28<br>A s<br>2<br>2<br>C<br>P<br>2|
|Non-Repetitive Avalanche Energy (Per Leg)<br>E <br>L = 4.8 mH, I = 7.5 A<br>135<br>mJ<br>AS<br>AS|
|Diode Ruggedness (Per Leg)<br>dV/dt<br>V = 0 ~ 960 V<br>200<br>V/ns<br>R|
|Power Dissipation (Per Leg / Per Device)<br>P<br>T = 25°C<br>166 / 332<br>W<br>Fig. 3<br>TOT<br>C|
|Operating and Storage Temperature<br>T  , T<br>-55 to 175<br>°C<br>j<br>stg|



_* Per Device_ 

www.genesicsemi.com/sic-schottky-mps/GC2X8MPS12-247/GC2X8MPS12-247.pdf 

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**TM** 

## GC2X8MPS12-247 1200V 15A SiC Schottky MPS™ Diode 

## Electrical Characteristics (Per Leg) 

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Values<br>Parameter  Symbol  Conditions  Unit  Note<br>Min.  Typ.  Max.<br>IF = 7.5 A, T  = 25°C j 1.5  1.8<br>Diode Forward Voltage  VF V  Fig. 1<br>IF = 7.5 A, T  = 175°C j 1.9<br>VR = 1200 V, T  = 25°C j 1  5<br>Reverse Current  IR µA  Fig. 2<br>VR = 1200 V, T  = 175°C j 9<br>VR = 400 V  28<br>Total Capacitive Charge  QC nC  Fig. 7<br>IF ≤ IF,MAX VR = 800 V  40<br>dIF/dt = 200 A/µs  VR = 400 V<br>Switching Time  tS < 10  ns<br>VR = 800 V<br>VR = 1 V, f = 1MHz  457<br>Total Capacitance  C  pF  Fig. 6<br>VR = 800 V, f = 1MHz  27<br>**----- End of picture text -----**<br>


## Thermal/Package Characteristics 

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Values<br>Parameter  Symbol  Conditions  Unit  Note<br>Min.  Typ.  Max.<br>Thermal Resistance, Junction - Case<br>RthJC 0.9  °C/W  Fig. 9<br>(Per Leg)<br>Weight  WT 6.1  g<br>Mounting Torque  TM Screws to Heatsink  1.1  Nm<br>**----- End of picture text -----**<br>


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www.genesicsemi.com/sic-schottky-mps/GC2X8MPS12-247/GC2X8MPS12-247.pdf 

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GC2X8MPS12-247 1200V 15A SiC Schottky MPS™ Diode 

**TM** 

Figure 1: Typical Forward Characteristics (Per Leg) 

## IF = f(VF,T ); tj P = 250 µs 

Figure 3: Power Derating Curves (Per Leg) 

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PTOT = f(TC); T  = 175°C j<br>**----- End of picture text -----**<br>


Figure 2: Typical Reverse Characteristics (Per Leg) 

## IR = f(VR,T )j 

Figure 4: Current Derating Curves (Typical VF) (Per Leg) 

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IF = f(TC); D = tP/T; T  ≤ 175°C; fj SW > 10kHz<br>**----- End of picture text -----**<br>


www.genesicsemi.com/sic-schottky-mps/GC2X8MPS12-247/GC2X8MPS12-247.pdf 

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GC2X8MPS12-247 1200V 15A SiC Schottky MPS™ Diode 

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Figure 5: Current Derating Curves (Maximum VF) (Per Leg) 

## IF = f(TC); D = tP/T; T  ≤ 175°C; fj SW > 10kHz 

Figure 7: Typical Capacitive Charge vs Reverse Voltage Characteristics (Per Leg) 

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QC = f(VR); f = 1MHz<br>**----- End of picture text -----**<br>


Figure 6: Typical Junction Capacitance vs Reverse Voltage Characteristics (Per Leg) 

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C = f(VR); f = 1MHz<br>**----- End of picture text -----**<br>


Figure 8: Typical Capacitive Energy vs Reverse Voltage Characteristics (Per Leg) 

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EC = f(VR); f = 1MHz<br>**----- End of picture text -----**<br>


www.genesicsemi.com/sic-schottky-mps/GC2X8MPS12-247/GC2X8MPS12-247.pdf 

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GC2X8MPS12-247 1200V 15A SiC Schottky MPS™ Diode 

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Figure 9: Transient Thermal Impedance (Per Leg) 

Zth,jc = f(tP,D); D = tP/T 

Figure 10: Forward Curve Model (Per Leg) 

## Forward Curve Model Equation: 

IF = (VF - VBI)/RDIFF (A) 

Built-In Voltage (VBI): 

- VBI(T ) = j m × T  + j n (V) m = -0.00123 (V/°C) n = 0.995 (V) 

## Differential Resistance (RDIFF): 

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' 1/RDIFF<br>ee<br>VBI<br>Forward<br>IF = f(VF,T )j<br>**----- End of picture text -----**<br>


RDIFF(T ) = j a × Tj[2] + b × T  + j c (Ω) a = 1.59e-06 (Ω/°C2) b = 0.000226 (Ω/°C) 

- c = 0.0669 (Ω) 

## Forward Power Loss Equation: 

PLOSS = VBI(T ) × Ij AVG + RDIFF(T ) × Ij RMS[2] 

www.genesicsemi.com/sic-schottky-mps/GC2X8MPS12-247/GC2X8MPS12-247.pdf 

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GC2X8MPS12-247 1200V 15A SiC Schottky MPS™ Diode 

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## Package Dimensions 

## TO-247-3 Package Outline 

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0.170 (4.32) 0.620 (15.75)0.635 (16.13) 0.190 (4.83)0.205 (5.21) _ 0.530 (13.46)0.557 (14.16) 0.047<br>0.216 (5.49) (1.19)<br>0.085 (2.16) 0.059 (1.50)<br>0.108 (2.75) 0.098 (2.49) T<br>7 0.212 (5.39) - 0.238 (6.04)<br>Lo of 0.244 (6.20) 0.248 (6.30.)<br>0.819<br>0.831 0.640 (16.25)<br>(20.80) Ø 0.140 (3.56) 0.695 (17.65)<br>(21.10) Ø 0.144 (3.65)<br>Ø 0.283 (7.19) REF<br>a=| |}7 _<br>0.161 (4.10)<br>0.173 (4.40)<br>0.780<br>0.800 0.113 (2.87)<br>(19.81) 0.127 (3.22)<br>0.075 (1.91)<br>(20.32)<br>0.094 (2.39)<br>0.022 (0.55)<br>0.044 (1.12)0.052 (1.33) 0.214 (5.44) BSC. 0.027 (0.69) 0.090 (2.29)<br>oj. 0.100 (2.55)<br>**----- End of picture text -----**<br>


Recommended Solder Pad Layout Package View ~~ll~~ —_ **Case (K)** | +o 0.12 (3.05) 0.214 (5.44) 0.08 (2.03) **A** 0.214 (5.44) **A** ~~tot~~ at **K** 

## NOTE 

1. CONTROLLED DEIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 

2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS. 

www.genesicsemi.com/sic-schottky-mps/GC2X8MPS12-247/GC2X8MPS12-247.pdf 

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Apr. 20 Rev 1.4 

GC2X8MPS12-247 1200V 15A SiC Schottky MPS™ Diode 

**TM** 

## RoHS Compliance 

The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS 2), as adopted by EU member states on January 2, 2013 and amended on March 31, 2015 by EU Directive 2015/863. RoHS Declarations for this product can be obtained from your GeneSiC representative. 

## REACH Compliance 

REACH substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a GeneSiC representative to insure you get the most up-to-date REACH SVHC Declaration. REACH banned substance information (REACH Article 67) is also available upon request. 

This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. 

GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. 

## Related Links 

- SPICE Models: https://www.genesicsemi.com/sic-schottky-mps/GC2X8MPS12-247/GC2X8MPS12-247_SPICE.zip 

- PLECS Models: https://www.genesicsemi.com/sic-schottky-mps/GC2X8MPS12-247/GC2X8MPS12-247_PLECS.zip 

- CAD Models: https://www.genesicsemi.com/sic-schottky-mps/GC2X8MPS12-247/GC2X8MPS12-247_3D.zip 

- Evaluation Boards: https://www.genesicsemi.com/technical-support 

- Reliability: https://www.genesicsemi.com/reliability 

- Compliance: https://www.genesicsemi.com/compliance 

- Quality Manual: https://www.genesicsemi.com/quality 

## www.genesicsemi.com/sic-schottky-mps/ 

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**Apr. 20 Rev 1.4 Copyright© 2020 GeneSiC Semiconductor Inc. All Rights Reserved. The information in this document is subject to change without notice.** 

**Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155, Dulles, VA 20166; USA Page 7 of 7** 



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- [Supplier page](https://es.farnell.com/genesic/gc2x8mps12-247/silicon-carbide-schottky-diode/dp/2989885)
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