# Silicon Carbide Schottky Diode, MPS, Single, 1.2 kV, 94 A, 79 nC, TO-220
**URL**: https://novapart.co/products/GC20MPS12-220/silicon-carbide-schottky-diode-mps-single-12-kv-94
**SKU**: GC20MPS12-220
**Manufacturer**: GENESIC
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €8.2700
**Stock**: 10+
## Description
Product Range:MPS Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:94A; Total Capacitive Charge Qc:79nC; Diode Case Styl
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (17-Dec-2015) |
| No. Of Pins | 2 Pin |
| Product Range | MPS |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-220 |
| Diode Configuration | Single |
| Average Forward Current | 94A |
| Total Capacitive Charge | 79nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 1.2kV |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2989884/)
## **GC20MPS12-220**
1200 V SiC MPS™ Diode
## **Silicon Carbide Schottky Diode**
**VRRM = 1200 V IF (Tc** = **135°C) = 46 A QC = 66 nC**
## **Features**
- High Avalanche (UIS) Capability
- Enhanced Surge Current Capability
- Superior Figure of Merit QC/IF
- Low Thermal Resistance
- 175 °C Maximum Operating Tempera **t** ure Temperature Independent Switching **B** ehavior
- Positive Temperature Coefficient of V **F**
- Extremely Fast Switching Speeds
## **Package**
**==> picture [84 x 88] intentionally omitted <==**
**----- Start of picture text -----**
Case o
A
K
TO-220-2
**----- End of picture text -----**
## **Advantages**
- Low Standby Power Losses
- Improved Circuit Efficiency (Lower Overall Cost)
- Low Switching Losses
- Ease of Paralleling without Thermal Runaway
- Smaller Heat Sink Requirements
- Low Reverse Recovery Current
- Low Device Capacitance
- Low Reverse Leakage Current
## **Applications**
- Boost Diode in Power Factor Correction (PFC) Switched Mode Power Suppl **y** (SMPS) Uninterruptible Power Supply (UPS) Motor Drives Freewheeling / Anti-parallel **D** iode in Inverters Solar Inverters Electric Vehicles (EV) & Cha **r** ging Stations
- Induction Heating & Welding
## **Absolute Maximum Ratings** (At TC = 25 °C Unless Otherwise Stated)
|**Parameter**|**Symbol**|**Conditions**|**Value**
**s**|**Unit**|
|---|---|---|---|---|
|Repetitive Peak Reverse Voltage|VRRM||120**0**|V|
|||TC= 25 °C, D = 1|94||
|Continuous Forward Current|IF|TC= 135 °C, D = 1|46|A|
|||TC= 165 °C, D = 1|20||
|Non-Repetitive Peak Forward Surge
Current, Half Sine Wave|IF,SM|TC= 25 °C, tP= 10 ms
TC= 150 °C, tP= 10 ms|12**0**
96|A|
|Repetitive Peak Forward Surge Current,
Half Sine Wave|IF,RM|TC= 25 °C, tP= 10 ms
TC= 150 °C, tP= 10 ms|82
55|A|
|Non-Repetitive Peak Forward Surge
Current|IF,max|TC= 25 °C, tP= 10 µs|110**0**|A|
|i2t Value|∫i2 dt|TC= 25 °C, tP= 10 ms|72|A2s|
|Non-Repetitive Avalanche Energy|EAS|L = 1 mH, IAS= 20 A|22**0**|mJ|
|Diode Ruggedness|dV/dt|VR= 0 ~ 960 V|10**0**|V/ns|
|Power Dissipation|Ptot|TC= 25 °C|59**7**|W|
|Operating and Storage Temperature|Tj, Tstg||-55 to**1**
75|°C|
J >.
## **GC20MPS12-220**
1200 V SiC MPS™ Diode
## **Electrical Characteristics**
|||||**Value**
**s**|||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Diode Forward Voltage|VF|IF= 20.0 A, Tj= 25 °C
IF= 20.0 A, Tj= 175 °C||1.5
2|1.8
2.4|V|
|Reverse Current|IR|VR= 1200 V, Tj= 25 °C
VR= 1200 V, Tj= 175 °C||1.8
5.4|18
64.8|µA|
|||VR= 400 V||54|||
|Total Capacitive Charge|QC|IF≤ IF,MAX
VR= 800 V||79||nC|
|||dIF/dt = 200 A/μs|||||
|Switching Time|ts|Tj = 175 °C
VR= 400 V
VR= 800 V||< 1**0**||ns|
|Total Capacitance|C|VR= 1 V, f = 1 MHz, Tj= 25 °C
VR= 800 V, f = 1 MHz, Tj= 25 °C||129**8**
83||pF|
## **Thermal / Mechanical Characteristics**
|Thermal Resistance, Junction - Case|RthJC|0.2**2**|°C/W|
|---|---|---|---|
|Weight|WT|2|g|
|Mounting Torque|TM|0.8|Nm|
## J)
## **GC20MPS12-220**
## 1200 V SiC MPS™ Diode
IF = f(VF,Tj); tP = 10 µs
**Figure 1: Typical Forward Characteristics**
**==> picture [52 x 11] intentionally omitted <==**
**----- Start of picture text -----**
IR = f(VR,Tj)
**----- End of picture text -----**
**Figure 3: Typical Reverse Characteristics**
IF = f(VF,Tj); tP = **1** 0 µs **Figure 2: Typical High Current Forward Characteristics**
**==> picture [42 x 9] intentionally omitted <==**
**----- Start of picture text -----**
Ptot = f(TC)
**----- End of picture text -----**
**Figure 4: Power Derating Curve**
S
## **GC20MPS12-220**
## 1200 V SiC MPS™ Diode
IF = f(TC); D = tP/T, tP= 10 µs C = f(VR); Tj = 25 °C; f = 1 MHz
**Figure 5: Current Derating Curves(Tj = 206 °C)**
**Figure 6: Typical Junction Capacitance vs Reverse Voltage Characteristics**
Qc = f(VR); Tj = 25 °C; f = 1 MHz
**Figure 7: Typical Capacitive Charge vs Reverse Voltage Characteristics**
EC = f(VR); Tj = 25 °C; f = 1 MHz
**Figure 8: Typical Capacitive Energy vs Reverse Voltage Characteristics**
>.
## **GC20MPS12-220**
## 1200 V SiC MPS™ Diode
Zth,jc = f(tP,D); D = tP/T
**Figure 9: Transient Thermal Impedance**
IF = (VF – VBI)/RD **I** FF[(A)]
## **Built-In Voltage (VBI):**
VBI(Tj) = m*Tj + **n** (V) m = -1.64e-03, n **=** 1.01 **Differential Resistance (RDIFF):** RDIFF(Tj) = a*Tj2 + b* **T** j[ + c (Ω); ] a = 6.30e-07, b = 1.05e- **0** 4, c = 0.0223
IF = f(VF, Tj)
**Figure 10: Forward Curve Model**
J >.
## **GC20MPS12-220**
## 1200 V SiC MPS™ Diode
## **Package Dimensions**
## **TO-220-2L**
## **Package Outline**
## **Recommended Solder Pad Layout**
- **NOTE** 1. CONTROLLED DIMENSION IS INCH. DIMEN **S** ION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLAS **H** , MOLD FLASH, MATERIAL PROTRUSIONS
1200 V SiC MPS™ Diode
## **GC20MPS12-220**
## **RoHS Compliance**
The levels of RoHS restricted materi **a** ls in this product are below the maximum con **c** entration values (also referred to as the threshold limits) pe **r** mitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65 **/** EC (RoHS), as implemented November 15, 2017. RoHS Declarations for this product can be obtained from your **G** eneSiC representative.
## **REACh Compliance**
REACh substances of high concern **(** SVHCs) information is available for this product **.** Since the European Chemical Agency (ECHA) has publis **h** ed notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a G **e** neSiC representative to insure you get the most up **-** to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available up **o** n request.
This product has not been designed or **t** ested for use in, and is not intended for use in, app **l** ications implanted into the human body nor in applications in **w** hich failure of the product could lead to death, per **s** onal injury or property damage, including but not limited to e **q** uipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emerg **e** ncy medical equipment, aircraft navigation or co **m** munication or control systems, or air traffic control systems.
GeneSiC disclaims all and any warran **t** y and liability arising out of use or application of a **n** y product. No license, express or implied to any intellectual pr **o** perty rights is granted by this document.
## **Related Links**
- Soldering Document: http://ww **w** .genesicsemi.com/technical-support/quality /
- Tin-whisker Report: http://www.genesicsemi.com/technical-support/compliance/ Reliability Report: http://www.g **e** nesicsemi.com/technical-support/reliability/
## Links
- [View this product on Novapart](https://novapart.co/products/GC20MPS12-220/silicon-carbide-schottky-diode-mps-single-12-kv-94)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/genesic/gc20mps12-220/silicon-carbide-schottky-diode/dp/2989884)
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