GC05MPS12-252

1200 V SiC MPS™ Diode 

## **GC05MPS12-252** 

## **Silicon Carbide Schottky Diode** 

**VRRM = 1200 V IF (Tc** = **135°C) = 13 A QC = 22 nC** 

## **Features** 

- High Avalanche (UIS) Capability 

- Enhanced Surge Current Capability 

- Superior Figure of Merit QC/IF 

- Low Thermal Resistance 

- 175 °C Maximum Operating Temperature 

- Temperature Independent Switching Behavior 

- Positive Temperature Coefficient Of VF 

- Extremely Fast Switching Speeds 

## **Package** 

**==> picture [76 x 86] intentionally omitted <==**

**----- Start of picture text -----**<br>
Case P<br>2<br>1<br>TO-252-2L<br>**----- End of picture text -----**<br>


## **Advantages** 

- Low Standby Power Losses 

- Improved Circuit Efficiency (Lower Overall Cost) 

- Low Switching Losses 

- Ease of Paralleling without Thermal Runaway 

- Smaller Heat Sink Requirements 

- Low Reverse Recovery Current 

- Low Device Capacitance 

- Low Reverse Leakage Current 

## **Applications** 

- Boost Diode in Power Factor Correction (PFC) 

- Switched Mode Power Supply (SMPS) 

- Uninterruptible Power Supply (UPS) 

- Motor Drives 

- Freewheeling / Anti-parallel Diode in Inverters 

- Solar Inverters 

- LED and HID Lighting 

- AC-DC Converters & Auxiliary Power Supplies 

## **Absolute Maximum Ratings** (At TC = 25 °C Unless Otherwise Stated) 

|**Parameter**|**Symbol**|**Conditions**|**Values**|**Unit**|
|---|---|---|---|---|
|Repetitive Peak Reverse Voltage|VRRM||1200|V|
|||TC= 25 °C, D = 1|27||
|Continuous Forward Current|IF|TC= 135 °C, D = 1|13|A|
|||TC= 168 °C, D = 1|5||
|Non-Repetitive Peak Forward Surge<br>Current, Half Sine Wave|IF,SM|TC= 25 °C, tP= 10 ms<br>TC= 150 °C, tP= 10 ms|48<br>39|A|
|Repetitive Peak Forward Surge Current,<br>Half Sine Wave|IF,RM|TC= 25 °C, tP= 10 ms<br>TC= 150 °C, tP= 10 ms|27<br>18|A|
|Non-Repetitive Peak Forward Surge<br>Current|IF,max|TC= 25 °C, tP= 10 µs|410|A|
|i2t Value|∫i2 dt|TC= 25 °C, tP= 10 ms|11.6|A2s|
|Non-Repetitive Avalanche Energy|EAS|L = 5.1 mH, IAS= 5 A|63|mJ|
|Diode Ruggedness|dV/dt|VR= 0 ~ 960 V|100|V/ns|
|Power Dissipation|Ptot|TC= 25 °C|200|W|
|Operating and Storage Temperature|Tj, Tstg||-55 to 175|°C|



## **GC05MPS12-252** 

## 1200 V SiC MPS™ Diode 

## **Electrical Characteristics** 

|||||**Values**|||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Diode Forward Voltage|VF|IF= 5 A, Tj= 25 °C<br>IF= 5 A, Tj= 175 °C||1.5<br>2|1.8<br>2.4|V|
|Reverse Current|IR|VR= 1200 V, Tj= 25 °C<br>VR= 1200 V, Tj= 175 °C||0.4<br>1.2|4<br>14.4|µA|
|||VR= 400 V||15|||
|Total Capacitive Charge|QC|IF≤ IF,MAX<br>VR= 800 V||22||nC|
|||dIF/dt = 200 A/μs|||||
|Switching Time|ts|Tj = 175 °C<br>VR= 400 V<br>VR= 800 V||< 10||ns|
|Total Capacitance|C|VR= 1 V, f = 1 MHz, Tj= 25 °C<br>VR= 800 V, f = 1 MHz, Tj= 25 °C||359<br>27||pF|



## **Thermal / Mechanical Characteristics** 

|Thermal Resistance, Junction - Case|RthJC|0.68|°C/W|
|---|---|---|---|
|Weight|WT|0.3|g|



## **GC05MPS12-252** 

## 1200 V SiC MPS™ Diode 

IF = f(VF,Tj); tP = 10 µs 

**Figure 1: Typical Forward Characteristics** 

IF = f(VF,Tj); tP = 10 µs 

**Figure 2: Typical High Current Forward Characteristics** 

IR = f(VR,Tj) Ptot = f(TC) 

**Figure 3: Typical Reverse Characteristics** 

**Figure 4: Power Derating Curve** 

## **GC05MPS12-252** 

## 1200 V SiC MPS™ Diode 

IF = f(TC); D = tP/T, tP= 10 µs C = f(VR); Tj = 25 °C; f = 1 MHz 

**Figure 5: Current Derating Curves** 

**Figure 6: Typical Junction Capacitance vs Reverse Voltage Characteristics** 

Qc = f(VR); Tj = 25 °C; f = 1 MHz 

**Figure 7: Typical Capacitive Charge vs Reverse Voltage Characteristics** 

EC = f(VR); Tj = 25 °C; f = 1 MHz 

**Figure 8: Typical Capacitive Energy vs Reverse Voltage Characteristics** 

## **GC05MPS12-252** 

## 1200 V SiC MPS™ Diode 

Zth,jc = f(tP,D); D = tP/T 

**Figure 9: Transient Thermal Impedance** 

IF = (VF – VBI)/RDIFF (A) 

## **Built-In Voltage (VBI):** 

VBI(Tj) = m*Tj + n (V) m = -1.52e-03, n = 1.01 

## **Differential Resistance (RDIFF):** 

RDIFF(Tj) = a*Tj2 + b*Tj + c (Ω); a = 2.52e-06, b = 4.22e-04, c = 0.0891 

IF = f(VF, Tj) 

**Figure 10: Forward Curve Model** 

## **GC05MPS12-252** 

1200 V SiC MPS™ Diode 

## **Package Dimensions** 

**TO-252-2L Package Outline** 

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**----- Start of picture text -----**<br>
0.265 (6.73)<br>0.094 (2.38)<br>0.252 (6.40)<br>0.087 (2.20)<br>0.173 (4.40)<br>0.215 (5.46) 0.050 (1.27) min<br>0.035 (0.89)<br>0.205 (5.21) 0.023 (0.58)<br>0.018 (0.46)<br>SEATING<br>PLANE 0.205 (5.21)<br>fi 0.409 (10.40) t min<br>0.245 (6.22) 0.370 (9.40)<br>0.236 (6.00)<br>0 .005 (0.127) max<br>0.1080 REF<br>0.070 (1.77) (2.743 REF)<br>0.045 (1.14) 0.055 (1.40)<br>0.023 (0.58)<br>0.030 (0.77) 0.035 (0.88) 0.018 (0.46)<br>0.090 BSC 0.025 (0.64) 0.020 BSC<br>Tt. (2.286 BSC) a (0.508 BSC) Tt.<br>0.180 BSC<br>Th (4.572 BSC)<br>**----- End of picture text -----**<br>


## **Recommended Solder Pad Layout** 

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0.236 (6.00)<br>chal<br>0.256 (6.50)<br>0.246 (6.25)<br>0.118 (3.00)<br>0 .055 (1.40)<br>0.055 (1.40)<br>aa<br>0.090 (2.29) 0.090 (2.29)<br>a<br>**----- End of picture text -----**<br>


**NOTE** 

1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 

2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS 

1200 V SiC MPS™ Diode 

## **GC05MPS12-252** 

## **RoHS Compliance** 

The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented November 15, 2017. RoHS Declarations for this product can be obtained from your GeneSiC representative. 

## **REACh Compliance** 

REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a GeneSiC representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. 

This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. 

GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. 

## **Related Links** 

- Soldering Document: http://www.genesicsemi.com/quality/quality-manual/ 

- Tin-whisker Report: http://www.genesicsemi.com/quality/compliance/ 

- Reliability Report: http://www.genesicsemi.com/quality/reliability/