# Bipolar (BJT) Single Transistor, PNP, 30 V, 7 A, 3 W, SOT-223, Surface Mount ![Product image](https://novapart.co/image/farnell:4318744/) **URL**: https://novapart.co/products/FZT949/bipolar-bjt-single-transistor-pnp-30-v-7-a-3-w-sot **SKU**: FZT949 **Manufacturer**: DIODES INC. **Price**: €0.4700 **Stock**: 10+ **Lead Time**: 260 days (indicative) ## Specifications | Parameter | Value | |---|---| | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | - | | Qualification | - | | Power Dissipation | 3W | | Transistor Mounting | Surface Mount | | Transistor Polarity | PNP | | Transition Frequency | 80MHz | | Transistor Case Style | SOT-223 | | Dc Current Gain Hfe Min | 200hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 7A | | Collector Emitter Voltage Max | 30V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:4318744/) **SOT223 PNP SILICON PLANAR HIGH CURRENT** ## **(HIGH PERFORMANCE) TRANSISTORS** ## **FZT948 FZT949** ## **ISSUE 2 - NOVEMBER 1995** FEATURES - Extremely low equivalent on-resistance; **RCE(sat)** - 6 Amps continuous current - Up to 20 Amps peak current - Very low saturation voltage - Excellent hFE characteristics specified upto 20 Amps **==> picture [78 x 68] intentionally omitted <==** **----- Start of picture text -----**
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## PARTMARKING DETAILS — DEVICE TYPE IN FULL ## **ABSOLUTE MAXIMUM RATINGS.** |**ABSOLUTE MAXIMUM RATINGS.**||||| |---|---|---|---|---| |PARAMETER|SYMBOL|FZT948|FZT949|UNIT| |Collector-Base Voltage|VCBO|-40|-50|V| |Collector-Emitter Voltage|VCEO|-20|-30|V| |Emitter-Base Voltage|VEBO|-6||V| |Peak Pulse Current|ICM|-20||A| |Continuous Collector Current|IC|-6|-5.5|A| |Power Dissipation at Tamb=25°C|Ptot|**3**||**W**| |Operating and Storage Temperature
Range|Tj:Tstg|-55 to +150||°C| *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum ## **FZT948** ## **ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)** |PARAMETER|SYMBOL|MIN.|TYP.|MAX.|UNIT|CONDITIONS.| |---|---|---|---|---|---|---| |Collector-Base Breakdown
Voltage|V(BR)CBO|-40|-55||V|IC=-100µA| |Collector-Emitter
Breakdown Voltage|V(BR)CER|-40|-55||V|IC=-1µA, RB≤1kΩ| |Collector-Emitter
Breakdown Voltage|V(BR)CEO|-20|-30||V|IC=-10mA*| |Emitter-Base Breakdown
Voltage|V(BR)EBO|-6|-8||V|IE=-100µA| |Collector Cut-Off Current|ICBO|||-50
-1|nA
µA|VCB=-30V
VCB=-30V,
Tamb=100°C| |Collector Cut-Off Current|ICER
R≤1kΩ|||-50
-1|nA
µA|VCB=-30V
VCB=-30V,
Tamb=100°C| |Emitter Cut-Off Current|IEBO|||-10|nA|VEB=-6V| |Collector-Emitter Saturation
Voltage|VCE(sat)||-60
-110
-200
-360|-130
-180
-280
-450|mV
mV
mV
mV|IC=-0.5A, IB=-10mA*
IC=-2A, IB=-200mA*
IC=-4A, IB=-400mA*
IC=-6A, IB=-250mA*| |Base-Emitter
Saturation Voltage|VBE(sat)||-1050|-1200|mV|IC=-5A, IB=-300mA*| |Base-Emitter
Turn-On Voltage|VBE(on)||-870|-1050|mV|IC=-6A, VCE=-1V*| |Static Forward
Current Transfer Ratio|hFE|100
100
75
60
15|200
200
160
130
40|300||IC=-10mA, VCE=-1V
IC=-1A, VCE=-1V*
IC=-5A, VCE=-1V*
IC=-10A, VCE=-1V*
IC=-20A, VCE=-2V*| |Transition Frequency|fT||80||MHz|IC=-100mA, VCE=-10V
f=50MHz| |Output Capacitance|Cobo||163||pF|VCB=-10V, f=1MHz| |Switching Times|ton
toff||120
126||ns
ns|IC=-4A, IB1=-400mA
IB2=400mA, VCC=-10V| > *Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2% Spice parameter data is available upon request for this device **RCE(sat) 46m** Ω **at 5A** **FZT948** **==> picture [96 x 62] intentionally omitted <==** **==> picture [75 x 64] intentionally omitted <==** **==> picture [61 x 40] intentionally omitted <==** **==> picture [73 x 69] intentionally omitted <==** ## **FZT949** ## **ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)** |PARAMETER|SYMBOL|MIN.|TYP.|MAX.|UNIT|CONDITIONS.| |---|---|---|---|---|---|---| |Collector-Base Breakdown
Voltage|V(BR)CBO|-50|-80||V|IC=-100µA| |Collector-Emitter
Breakdown Voltage|V(BR)CER|-50|-80||V|IC=-1µA, RB≤1kΩ| |Collector-Emitter
Breakdown Voltage|V(BR)CEO|-30|-45||V|IC=-10mA*| |Emitter-Base Breakdown
Voltage|V(BR)EBO|-6|-8||V|IE=-100µA| |Collector Cut-Off Current|ICBO|||-50
-1|nA
µA|VCB=-40V
VCB=-40V,
Tamb=100°C| |Collector Cut-Off Current|ICER
R≤1kΩ|||-50
-1|nA
µA|VCB=-40V
VCB=-40V,
Tamb=100°C| |Emitter Cut-Off Current|IEBO|||-10|nA|VEB=-6V| |Collector-Emitter Saturation
Voltage|VCE(sat)||-50
-85
-190
-350|-75
-140
-270
-440|mV
mV
mV
mV|IC=-0.5A, IB=-20mA*
IC=-1A, IB=-20mA*
IC=-2A, IB=-200mA*
IC=-5.5A, IB=-500mA*| |Base-Emitter
Saturation Voltage|VBE(sat)||-1100|-1250|mV|IC=-5.5A, IB=-500mA*| |Base-Emitter
Turn-On Voltage|VBE(on)||-900|-1060|mV|IC=-5.5A, VCE=-1V*| |Static Forward
Current Transfer Ratio|hFE|100
100
75|200
200
140
35|300||IC=-10mA, VCE=-1V
IC=-1A, VCE=-1V*
IC=-5A, VCE=-1V*
IC=-20A, VCE=-2V*| |Transition Frequency|fT||100||MHz|IC=-100mA, VCE=-10V
f=50MHz| |Output Capacitance|Cobo||122||pF|VCB=-10V, f=1MHz| |Switching Times|ton
toff||120
130||ns
ns|IC=-4A, IB1=-400mA
IB2=400mA, VCC=-10V| > *Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2% Spice parameter data is available upon request for this device **RCE(sat) 44m** Ω **at 4.5A** ## **FZT949** ## **TYPICAL CHARACTERISTICS** **==> picture [354 x 466] intentionally omitted <==** **----- Start of picture text -----**
IC/IB=50 Tamb=25°C -55°C IC/IB=10
1.6 1.6 +25°C
IC/IB=10 +175°C
1.4 1.4
1.2 1.2
1.0 1.0
0.8 0.8
0.6 0.6
0.4 0.4
0.2 0.2
0 0
0.001 0.01 0.1 1 10 20 0.001 0.01 0.1 1 10 20
IC - Collector Current (Amps) IC - Collector Current (Amps)
VCE(sat) v IC VCE(sat) v IC
1.6 +100°C +25°C VCE=1V 1.6 +25°C +100°C-55°C IC/IB=10
-55°C 300 1.4 +175°C
1.4
1.2
1.2
1.0
1.0 200
0.8 0.8
0.6
0.6
0.4 100 0.4
0.2 0.2
0 0.001 0.01 0.1 1 10 20 0 0.001 0.01 0.1 1 10 20
IC - Collector Current (Amps) IC - Collector Current (Amps)
hFE v IC VBE(sat) v IC
1.6 +25°C-55°C VCE=1V 100 Single Pulse Test Tamb=25 °C
+100°C
1.4 +175°C
1.2 10
1.0
0.8 DC
1s
0.6 1 100ms
0.4 10ms1ms
100 µ s
0.2
0.1
0 0.001 0.01 0.1 1 10 20 0.1 1 10 100
IC - Collector Current (Amps) Vce - Collector Voltage (V)
VBE(on) v IC Safe Operating Area
- Typical Gain
FE
h
- Collector Current (A)
IC
- (Volts) - (Volts)
CE(sat) CE(sat)
V V
- (Volts)
BE(sat)
- Normalised Gain V
FE
h
- (Volts)
BE
V
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