# Bipolar (BJT) Single Transistor, NPN, 180 V, 5 A, 3 W, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:1843727/)

**URL**: https://novapart.co/products/FZT855TA/bipolar-bjt-single-transistor-npn-180-v-5-a-3-w
**SKU**: FZT855TA
**Manufacturer**: DIODES INC.
**Price**: €0.4750
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:180V; Transition Frequency ft:90MHz; Power Dissipation Pd:3W; DC Collector Current:5A; DC Current Gain hFE:200hFE; Transistor Ca

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 3W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 90MHz |
| Transistor Case Style | SOT-223 |
| Dc Current Gain Hfe Min | 200hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 5A |
| Collector Emitter Voltage Max | 180V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1843727/)

**FZT855** ~~.~~ **150V NPN MEDIUM POWER TRANSISTOR IN SOT223** 

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Green<br>**----- End of picture text -----**<br>


## **Features** 

## **Mechanical Data** 

- BVCEO > 150V 

- IC = 5A High Continuous Collector Current 

- ICM = 10A Peak Pulse Current 

- Very Low Saturation Voltage VCE(sat) < 110mV @ 1A 

- RCE(sat) = 50mΩ for a Low Equivalent On-Resistance 

- hFE Specified Up to 10A for a High Gain Hold-Up 

- Complementary PNP Type: FZT955 

   - Package: SOT223 (Type DN) 

   - Package Material: Molded Plastic. “Green” Molding Compound. UL Flammability Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish – Matte Tin Plated Leads. Solderable per MIL-STD-202, Method 208 

   - Weight: 0.112 grams (Approximate) 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/** 

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SOT223 (Type DN)  C<br>B<br>E<br>Top View  Device Symbol  Top View<br>Pin-Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Product**|**Compliance**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity per Reel**|
|---|---|---|---|---|---|
|FZT855TA|Standard|FZT855|7|12|1,000|



Notes: 

1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

## SOT223 

**==> picture [50 x 33] intentionally omitted <==**

**----- Start of picture text -----**<br>
FZT<br>855<br>YWW<br>**----- End of picture text -----**<br>


FZT 855 = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 7 = 2017) WW or WW = Week Code (01–53) 

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FZT855 Document Number DS33176 Rev. 8 - 2 

December 2021 © Diodes Incorporated 

**FZT855** 

## **Absolute Maximum Ratings** (@ TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|250|V|
|Collector-Emitter Voltage|VCEO|150|V|
|Emitter-Base Voltage|VEBO|7|V|
|Continuous Collector Current|IC|5|A|
|Peak Pulse Current|ICM|10|A|
|Base Current|IB|1|A|



## **Thermal Characteristics** (@ TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics**(@ TA = +25°C, unless otherwise specified.)@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@ TA = +25°C, unless otherwise specified.)@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@ TA = +25°C, unless otherwise specified.)@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation<br>Linear Derating Factor|(Note 5)|PD|3.0<br>24|W<br>mW/°C|
||(Note 6)||1.6<br>12.8||
|Thermal Resistance, Junction to Ambient|(Note 5)|RθJA|42|°C/W|
||(Note 6)|RθJA|78||
|Thermal Resistance Junction to Lead|(Note 7)|RθJL|8.8||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **ESD Ratings** (Note 8) 

|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|Electrostatic Discharge - Human BodyModel|ESD HBM|≥ 8,000|V|3B|
|ElectrostaticDischarge- MachineModel|ESD MM|≥ 400|V|C|



Notes: 5. For a device surface mounted on 52mm X 52mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; device measured when operating in steady state condition. 

6. Same as Note 5, except the device is mounted on 25mm x 25mm single sided 1oz weight copper. 

7. Thermal resistance from junction to solder-point (at the end of the collector lead). 

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

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FZT855 Document Number DS33176 Rev. 8 - 2 

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**FZT855** 

## **Thermal Characteristics and Derating Information** 

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**----- Start of picture text -----**<br>
\ N<br>~~ 10 Seth V CE(sat) Se Sas Sh 3.0<br>10 Limit<br>2.5<br><1Bog 1 NALASali DC iNwachnNAWiA aii 2.0 TNaPINNG EEE Single sided 2oz Cu52mmX52mm  :<br>a Ah N<br>1s 1.5<br>= jee OA P| | |N |<br>Peto 100ms ANSail ———~_| N x<br>100m 10ms 1.0<br>a”3 Single Pulse T FNS 52mmX52mm  0.1ms amb =25°C EE 1ms | 0.5 25mmX25mm  SIXTa<br>Single sided 1oz Cu<br>Single sided 2oz Cu 100µs<br>= 10m UT NET 0.0  ]<br>rg a S<br>100m 1 10 100 0 20 40 60 80 100 120 140 160<br>0.1 V Vce CE  Collector-Emitter Voltage (V) - Collector1 Voltage10 (Volts)100 1000  Temperature (°C)<br>Safe Operating Area Safe Operating Area Derating Curve<br>40 52mmX52mm  Single Pulse T amb =25°C<br>Single sided 2oz Cu 100 52mmX52mm<br>Single sided 2oz Cu<br>30 ea ae<br>ara BN 0 Su an an q<br>D=0.5<br>20 Bi ecm TM | eZ TIN<br>10<br>ail a B00 0 SU<br>D=0.2 Single Pulse<br>10<br>D=0.05<br>a 0<br>D=0.1<br>0 Sec M0 e T 1<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>  Collector Current (A)<br>C<br>I<br> Max Power Dissipation (W)<br>Thermal Resistance (°C/W)  Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


**Pulse Power Dissipation** 

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FZT855 Document Number DS33176 Rev. 8 - 2 

December 2021 © Diodes Incorporated 

**FZT855** 

**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~—————~~|**Symbol**<br>~~—————~~|**Min**<br>~~—————~~|**Typ**<br>~~—————~~|**Max**<br>~~—————~~|**Unit**<br>~~—————~~|**Test Condition**<br>~~—————~~|
|Collector-Base Breakdown Voltage<br>~~—————~~|BVCBO<br>~~—————~~<br>~~a~~|250<br>~~—————~~<br>~~a~~|375<br>~~—————~~|—<br>~~—————~~|V<br>~~—————~~|IC= 100µA<br>~~—————~~|
|Collector-Emitter Breakdown Voltage<br>~~————~~|BVCER<br>~~————~~<br>~~a~~|250<br>~~————~~<br>~~a~~|375<br>~~————~~|—<br>~~————~~|V<br>~~————~~|IC= 1µA,RB≤ 1kΩ<br>~~————~~|
|Collector-Emitter Breakdown Voltage(Note 9)<br>~~————~~|BVCEO<br>~~————~~<br>~~a~~|150<br>~~————~~<br>~~a~~|180<br>~~————~~|—<br>~~————~~|V<br>~~————~~|IC= 1mA<br>~~————~~|
|Emitter-Base Breakdown Voltage<br>~~————~~|BVEBO<br>~~————~~<br>~~a~~|7<br>~~————~~<br>~~a~~|8<br>~~————~~|—<br>~~————~~|V<br>~~————~~|IE= 100µA<br>~~————~~|
|Collector Cut-Off Current<br>~~a~~|ICBO<br>~~a ~~<br>~~a~~|—<br> ~~a~~<br>~~a~~|—<br>~~a~~|50<br>1<br>~~a~~|nA<br>µA<br>~~a~~|VCB= 200V<br>VCB= 200V, @TA= +100°C<br>~~a~~|
|Collector Cut-Off Current<br>~~fT~~|ICER<br>~~fT~~|—<br>~~fT~~|—<br>~~fT~~|50<br>1<br>~~fT~~|nA<br>µA<br>~~fT~~|VCE= 200V,R ≤ 1kΩ<br>VCE= 200V, @TA= +100°C<br>~~fT~~|
|Emitter Cut-Off Current<br>~~fT~~|IEBO<br>~~fT~~|—<br>~~fT~~|—<br>~~fT~~|10<br>~~fT~~|nA<br>~~fT~~|VEB= 6V<br>~~fT~~|
|Collector-Emitter Saturation Voltage (Note 9)<br>~~ee~~|VCE(sat)<br>~~ee~~|—<br>~~ee~~|20<br>35<br>60<br>260<br>~~ee~~|40<br>65<br>110<br>355<br>~~ee~~|mV<br>~~ee~~|IC= 100mA, IB= 5mA<br>IC=500mA, IB= 50mA<br>IC=1A, IB= 100mA<br>IC=5A,IB= 500mA<br>~~ee~~|
|Base-Emitter Saturation Voltage(Note 9)<br>~~ee~~<br>~~Pe~~|VBE(sat)<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~<br>~~QO~~|1,250<br>~~ee~~<br>~~QO~~|mV<br>~~ee~~<br>~~GO~~|IC=5A,IB= 500mA<br>~~ee~~|
|Base-Emitter Turn-On Voltage(Note 9)<br>~~GO~~<br>~~Pe~~|VBE(on)<br>~~GO~~|—<br>~~GO~~|—<br>~~GO~~<br>~~QO~~|1,100<br>~~GO~~<br>~~QO~~|mV<br>~~GO~~<br>~~GO~~|IC= 5A,VCE= 5V<br>~~GO~~|
|DC Current Gain (Note 9)<br>~~Pe~~|hFE<br>~~eee~~<br>~~ee~~|100<br>100<br>15<br>—<br>~~eee~~<br>~~ee~~|200<br>200<br>30<br>10<br>~~QO~~<br>~~eee~~<br>~~ee~~|—<br>300<br>—<br>—<br>~~QO~~<br>~~eee~~<br>~~ee~~|~~GO~~<br>~~eee~~|IC= 10mA, VCE= 5V<br>IC= 1A, VCE= 5V<br>IC= 5A, VCE= 5V<br>IC= 10A,VCE= 5V<br>~~eee~~|
|Current Gain-Bandwidth Product (Note 9)<br>~~Pe~~<br>~~ae~~|fT<br>~~ae~~<br>~~ee~~|—<br>~~ae~~<br>~~ee~~|90<br>~~QO~~<br>~~ae~~<br>~~ee~~|—<br>~~QO ~~<br>~~ae~~<br>~~ee~~|MHz<br> ~~GO~~<br>~~ae~~|VCE= 10V, IC= 100mA<br>f = 50MHz<br>~~ae~~|
|Output Capacitance<br>~~ae~~|Cobo<br>~~ae~~<br>~~ee~~|—<br>~~ae~~<br>~~ee~~|22<br>~~ae~~<br>~~ee~~|—<br>~~ae~~<br>~~ee~~|pF<br>~~ae~~|VCB= 10V,f = 1MHz<br>~~ae~~|
|Switching Times<br>~~TELL~~|ton<br>toff<br>~~ee ~~<br>~~TELL~~|—<br> ~~ee~~<br>~~TELL~~|66<br>2,130<br>~~ee~~<br>~~TELL~~|—<br>~~ee~~<br>~~TELL~~|ns<br>ns<br>~~TELL~~|IC= 1A, VCC= 50V<br>IB1= -IB2= 100mA<br>~~TELL~~|



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**FZT855** 

## **Typical Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.) 

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**FZT855** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT223 (Type DN)** 

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D<br>b2<br>C<br>eS ya<br>E1 E<br>Gauge<br>Plane<br>0.25<br>Seating L<br>Plane<br>e b<br>e1<br>A A1<br>A2<br>——<br>**----- End of picture text -----**<br>


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SOT223 (Type DN)<br>Dim  Min  Max  Typ<br>— A --  1.70  --<br>A1 0.01  0.15  --<br>A2 1.50  1.68  1.60<br>b 0.60  0.80  0.70<br>b2 2.90  3.10  --<br>c 0.20 0.32  --<br>D 6.30 6.70 --<br>E 6.70 7.30 --<br>E1 3.30 3.70 --<br>e --  --  2.30<br>e1 --  --  4.60<br>L 0.85  --  --<br>All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT223 (Type DN)** 

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X1<br>Y1<br>~ |<br>C1 Y2<br>Y<br>ooo. X C<br>**----- End of picture text -----**<br>


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Dimensions Value (in mm)<br>C  2.30<br>C1  6.40<br>X  1.20<br>X1  3.30<br>Y  1.60<br>Y1  1.60<br>Y2  8.00<br>**----- End of picture text -----**<br>


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~~**FZT855**~~ 

## **IMPORTANT NOTICE** 

||~~**FZT855**~~||
|---|---|---|
|~~**FZT855**~~<br>**IMPORTANT NOTICE**<br>1.<br>DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED,<br>WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED<br>WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY<br>INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).<br>2.<br>The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products<br>described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any<br>product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes<br>products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for<br>(a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended<br>applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well<br>as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality<br>control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with<br>their applications.<br>3.<br>Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes<br>from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such<br>use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and<br>liabilities.<br>4.<br>Products described herein may be covered by one or more United States, international or foreign patents and pending patent<br>applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks<br>and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties<br>(including third parties whose products and services may be described in this document or on Diodes’ website) under this document.<br>5.<br>Diodes<br>products<br>are<br>provided<br>subject<br>to<br>Diodes’<br>Standard<br>Terms<br>and<br>Conditions<br>of<br>Sale<br>(https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/)or other applicable terms. This document does not<br>alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any<br>products purchased through unauthorized sales channel.<br>6.<br>Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is<br>prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or<br>regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or<br>penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless<br>against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with<br>the applicable laws and regulations, as well as any unintended or unauthorized application.<br>7.<br>While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain<br>technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and<br>Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make<br>modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described<br>herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document<br>is the final and determinative format released by Diodes.<br>8.<br>Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is<br>prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such<br>unauthorized use.<br>Copyright © 2021 Diodes Incorporated<br>**www.diodes.com**|~~**FZT855**~~||



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## Links

- [View this product on Novapart](https://novapart.co/products/FZT855TA/bipolar-bjt-single-transistor-npn-180-v-5-a-3-w)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/fzt855ta/transistor-npn-150v-5a-sot-223/dp/1843727)
---

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