# Bipolar (BJT) Single Transistor, NPN, 100 V, 6 A, 3 W, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:4318728/)

**URL**: https://novapart.co/products/FZT853/bipolar-bjt-single-transistor-npn-100-v-6-a-3-w
**SKU**: FZT853
**Manufacturer**: DIODES INC.
**Price**: €0.4170
**Stock**: 10+
**Lead Time**: 260 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 3W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 130MHz |
| Transistor Case Style | SOT-223 |
| Dc Current Gain Hfe Min | 200hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 6A |
| Collector Emitter Voltage Max | 100V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4318728/)

## **SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS ISSUE 2 - OCTOBER 1995** 

**FZT851 FZT853** 

FEATURES 

- Extremely low equivalent on-resistance; **RCE(sat) 44m** Ω **at 5A** 

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- 6 Amps continuous current, up to 20 Amps peak current 

- Very low saturation voltages 

- Excellent hFE characteristics specified up to 10 Amps 

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**C B** 

PARTMARKING DETAILS - DEVICE TYPE IN FULL 

## **FZT851** 

## **ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)** 

|PARAMETER|SYMBOL|MIN.|TYP.|MAX.|UNIT|CONDITIONS.|
|---|---|---|---|---|---|---|
|Collector-Base  Breakdown|V(BR)CBO|150|220||V|IC=100µA|
|Voltage|||||||
|Collector-Emitter<br>Breakdown Voltage<br>Collector-Emitter<br>Breakdown Voltage<br>Emitter-Base  Breakdown<br>Voltage<br>Collector Cut-Off Current<br>Collector Cut-Off Current<br>Emitter Cut-Off Current<br>Collector-Emitter Saturation<br>Voltage<br>Base-Emitter<br>Saturation Voltage<br>Base-Emitter<br>Turn-On Voltage<br>Static Forward<br>Current Transfer<br>Ratio<br>Transition<br>Frequency<br>Output Capacitance<br>Switching Times|V(BR)CER<br>V(BR)CEO<br>V(BR)EBO<br>ICBO<br>ICER<br>R≤1kΩ<br>IEBO<br>VCE(sat)<br>VBE(sat)<br>VBE(on)<br>hFE<br>fT<br>Cobo<br>ton<br>toff|150<br>60<br>6<br>100<br>100<br>75<br>25|220<br>85<br>8<br>200<br>200<br>120<br>50<br>130<br>45<br>45<br>1100|50<br>1<br>50<br>1<br>10<br>50<br>100<br>170<br>375<br>1200<br>1150<br>300|V<br>V<br>V<br>nA<br>µA<br>nA<br>µA<br>nA<br>mV<br>mV<br>mV<br>mV<br>mV<br>mV<br>MHz<br>pF<br>ns<br>ns|IC=1µA, RB≤1kΩ<br>IC=10mA*<br>IE=100µA<br>VCB=120V<br>VCB=120V,<br>Tamb=100°C<br>VCB=120V<br>VCB=120V,<br>Tamb=100°C<br>VEB=6V<br>IC=0.1A, IB=5mA*<br>IC=1A, IB=50mA*<br>IC=2A, IB=50mA*<br>IC=6A, IB=300mA*<br>IC=6A, IB=300mA*<br>IC=6A, VCE=1V*<br>IC=10mA, VCE=1V<br>IC=2A, VCE=1V*<br>IC=5A, VCE=1V*<br>IC=10A, VCE=1V*<br>IC=100mA, VCE=10V<br>f=50MHz<br>VCB=10V,  f=1MHz<br>IC=1A, IB1=100mA<br>IB2=100mA, VCC=10V|



## **FZT851** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
0.8 1.6<br>300<br>1.4<br>0.6 1.2<br>1.0 200<br>0.4 IC/IB=10 0.8 VCE=5V<br>IC/IB=50 0.6 VCE=1V<br>100<br>0.2 0.4<br>0.2<br>0 0.01 0.1 1 10 100 0 0.01 0.1   1 10 100<br>I C  -  Collector Current (Amps)  I C  -  Collector Current (Amps)<br> VCE(sat) v IC hFE v IC<br>VCE=1V<br>2.0 2.0<br>1.5 1.5<br>IC/IB=10<br>IC/IB=50<br>1.0 1.0<br>0.5 0.5<br>0.001 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100<br>I C  -  Collector Current (Amps)  I C  -  Collector Current (Amps)<br>VBE(sat) v IC VBE(on) v IC<br>Single Pulse Test Tamb=25 °C<br>100<br>10<br>DC<br>1s<br>1 100ms<br>10ms<br>1ms<br>100 µ s<br>0.1<br>0.1 1 10 100<br>VCE - Collector Voltage (V)<br>Safe Operating Area<br>- (Volts)<br>BE<br> V<br>- Typical Gain<br>FE<br>h<br> - Collector Current (A)<br>IC<br>- (Volts)<br>CE(sat)<br> V - Normalised Gain<br>FE<br>h<br>- (Volts)<br>BE(sat)<br> V<br>**----- End of picture text -----**<br>


## **FZT851** 

## **ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)** 

|PARAMETER|SYMBOL|MIN.|TYP.|MAX.|UNIT|CONDITIONS.|
|---|---|---|---|---|---|---|
|Collector-Base  Breakdown|V(BR)CBO|150|220||V|IC=100µA|
|Voltage|||||||
|Collector-Emitter<br>Breakdown Voltage<br>Collector-Emitter<br>Breakdown Voltage<br>Emitter-Base  Breakdown<br>Voltage<br>Collector Cut-Off Current<br>Collector Cut-Off Current<br>Emitter Cut-Off Current<br>Collector-Emitter Saturation<br>Voltage<br>Base-Emitter<br>Saturation Voltage<br>Base-Emitter<br>Turn-On Voltage<br>Static Forward<br>Current Transfer<br>Ratio<br>Transition<br>Frequency<br>Output Capacitance<br>Switching Times|V(BR)CER<br>V(BR)CEO<br>V(BR)EBO<br>ICBO<br>ICER<br>R≤1kΩ<br>IEBO<br>VCE(sat)<br>VBE(sat)<br>VBE(on)<br>hFE<br>fT<br>Cobo<br>ton<br>toff|150<br>60<br>6<br>100<br>100<br>75<br>25|220<br>85<br>8<br>200<br>200<br>120<br>50<br>130<br>45<br>45<br>1100|50<br>1<br>50<br>1<br>10<br>50<br>100<br>170<br>375<br>1200<br>1150<br>300|V<br>V<br>V<br>nA<br>µA<br>nA<br>µA<br>nA<br>mV<br>mV<br>mV<br>mV<br>mV<br>mV<br>MHz<br>pF<br>ns<br>ns|IC=1µA, RB≤1kΩ<br>IC=10mA*<br>IE=100µA<br>VCB=120V<br>VCB=120V,<br>Tamb=100°C<br>VCB=120V<br>VCB=120V,<br>Tamb=100°C<br>VEB=6V<br>IC=0.1A, IB=5mA*<br>IC=1A, IB=50mA*<br>IC=2A, IB=50mA*<br>IC=6A, IB=300mA*<br>IC=6A, IB=300mA*<br>IC=6A, VCE=1V*<br>IC=10mA, VCE=1V<br>IC=2A, VCE=1V*<br>IC=5A, VCE=1V*<br>IC=10A, VCE=1V*<br>IC=100mA, VCE=10V<br>f=50MHz<br>VCB=10V,  f=1MHz<br>IC=1A, IB1=100mA<br>IB2=100mA, VCC=10V|



## **FZT851** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
0.8 1.6<br>300<br>1.4<br>0.6 1.2<br>1.0 200<br>0.4 IC/IB=10 0.8 VCE=5V<br>IC/IB=50 0.6 VCE=1V<br>100<br>0.2 0.4<br>0.2<br>0 0.01 0.1 1 10 100 0 0.01 0.1   1 10 100<br>I C  -  Collector Current (Amps)  I C  -  Collector Current (Amps)<br> VCE(sat) v IC hFE v IC<br>VCE=1V<br>2.0 2.0<br>1.5 1.5<br>IC/IB=10<br>IC/IB=50<br>1.0 1.0<br>0.5 0.5<br>0.001 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100<br>I C  -  Collector Current (Amps)  I C  -  Collector Current (Amps)<br>VBE(sat) v IC VBE(on) v IC<br>Single Pulse Test Tamb=25 °C<br>100<br>10<br>DC<br>1s<br>1 100ms<br>10ms<br>1ms<br>100 µ s<br>0.1<br>0.1 1 10 100<br>VCE - Collector Voltage (V)<br>Safe Operating Area<br>- (Volts)<br>BE<br> V<br>- Typical Gain<br>FE<br>h<br> - Collector Current (A)<br>IC<br>- (Volts)<br>CE(sat)<br> V - Normalised Gain<br>FE<br>h<br>- (Volts)<br>BE(sat)<br> V<br>**----- End of picture text -----**<br>




## Links

- [View this product on Novapart](https://novapart.co/products/FZT853/bipolar-bjt-single-transistor-npn-100-v-6-a-3-w)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/fzt853/transistor-npn-100v-6a-sot-223/dp/4318728)
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