# Bipolar (BJT) Single Transistor, PNP, 60 V, 3 A, 3 W, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:3943257RL/)

**URL**: https://novapart.co/products/FZT751QTA/bipolar-bjt-single-transistor-pnp-60-v-3-a-w-sot
**SKU**: FZT751QTA
**Manufacturer**: DIODES INC.
**Price**: €0.2430
**Stock**: 1000+
**Lead Time**: 302 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 3W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 140MHz |
| Transistor Case Style | SOT-223 |
| Dc Current Gain Hfe Min | 40hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 3A |
| Collector Emitter Voltage Max | 60V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943257RL/)

> [@] **Green** 

**Green FZT751Q 60V PNP HIGH PERFORMANCE TRANSISTOR IN SOT223** 

## **Description** 

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. 

## **Applications** 

- Automotive Lighting 

- MOSFET and IGBT Gate Driving 

## **Features** 

## **Mechanical Data** 

- BVCEO > -60V 

- IC = -3A High Continuous Current 

- ICM = -6A Peak Pulse Current 

- Low Saturation Voltage VCE(SAT) < -300mV @ -1A 

- Complementary NPN Type: FZT651Q 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

   - Case: SOT223 

   - Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish - Matte Tin Plated Leads. Solderable per MILSTD-202, Method 208 

   - Weight: 0.112 grams (Approximate) 

- **PPAP Capable (Note 4)** 

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SOT223<br>Top View<br>**----- End of picture text -----**<br>


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C<br>E<br>B C C<br>B<br>E<br>Device Symbol  Top View<br>Pin-Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information**(Note 5)|**Ordering Informationg Information Information**(Note 5)|**Ordering Informationg Information Information**(Note 5)|**Ordering Informationg Information Information**(Note 5)|**Ordering Informationg Information Information**(Note 5)|**Ordering Informationg Information Information**(Note 5)|
|---|---|---|---|---|---|
|||||||
|**Part Number**|**Compliance**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity Per Reel**|
|FZT751QTA|Automotive|FZT751|7|12|1,000|
|FZT751QTC|Automotive|FZT751|13|12|4,000|



- Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. Automotive products are AEC-Q101 qualified and are PPAP capable. Please refer to https://www.diodes.com/quality/. 

   5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

SOT223 

**FZT 751** ~~-~~ 

FZT 751 = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 8 = 2018) WW or WW = Week Code (01 to 53) 

1 of 7 **www.diodes.com** 

FZT751Q Document number: DS36963  Rev. 3 - 2 

March 2018 © Diodes Incorporated 

**FZT751Q** 

## **Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|-80|V|
|Collector-Emitter Voltage|VCEO|-60|V|
|Emitter-Base Voltage|VEBO|-7|V|
|Continuous Collector Current|IC|-3|A|
|Peak Pulse Current|ICM|-6|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation|(Note 6)|PD|2|W|
||(Note 7)||3|W|
|Thermal Resistance, Junction to Ambient|(Note 6)|RθJA|62.5|°C/W|
||(Note 7)||41.7|°C/W|
|Thermal Resistance,Junction to Leads|(Note 8)|RθJL|12.9|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **ESD Ratings** (Note 9) 

|**ESD Ratingsgss **(Note 9)|**ESD Ratingsgss **(Note 9)|**ESD Ratingsgss **(Note 9)|**ESD Ratingsgss **(Note 9)|**ESD Ratingsgss **(Note 9)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|Electrostatic Discharge - Human BodyModel|ESD HBM|4,000|V|3A|
|Electrostatic Discharge - Machine Model|ESD MM|400|V|C|



Notes: 6. For a device mounted with the collector lead on 25mm x 25mm 2oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst operating in steady-state. 

7. Same as Note 6, except the device is mounted on 50mm x 50mm 2oz copper. 

8. Thermal resistance from junction to solder-point (at the end of the collector lead). 

9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

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**FZT751Q** C... 

## **Thermal Characteristics and Derating Information** 

**==> picture [441 x 545] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 0 V CE(SAT) 10 V CE(SAT)<br>Limit Ew eets Ci )Wee Limit<br>LAT ATSC LPR | +t At A ENO pt AL TH<br>1 DC 1 DC<br>1s 1s<br>100ms 100ms<br>100 m | | [| TA=25oC tA 10ms 1ms sR il 100m TTT... TA=25oC 10ms TT 1ms SSA ty<br>25mm x 25mm 2oz FR-4 | ft 100s mn 50mm x 50mm 2oz FR-4 [| {| 100  s mn a<br>10 m | TTT Baill 10m Mall | [TAHT]<br>1 10 1 10<br>VCE  Collector-Emitter Voltage (V) VCE  Collector-Emitter Voltage (V)<br>Safe Operating Area Safe Operating Area<br>70 50<br>60 rHTh T A =25 o C ncnoooni T A =25 o C eS<br>rH 0 A aiy 40 50mm x 50mm  MEEUM TTI Eo<br>50 aI 25mm x 25mm  2oz FR-4 ly<br>rH 2oz FR-4 A co” A CTT<br>Ona eT 30 mm aT<br>40<br>D=0.5<br>SE arn a D=0.5 eae<br>30 ——" mnmente?”—_| Al AN Ml 20 Segne AA<br>20 Bat D=0.2 Single Pulse ai D=0.2 BA TLE Zac Single Pulse i<br>aang RUN it Al D=0.05 Il 10 | Nes" atl<br>10 Lgeon Ml eeTT1 | eeSATIN. D=0.05 Ta|<br>D=0.1 D=0.1<br>0 SeprneseenmeiMAN maa UN 0 someOE(0001ccectlla<br>100μµ 1m 10m 100m 1 10 100 1k 100μµ 1m 10m 100m 1 10 100 1k<br> Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Transient Thermal Impedance<br>3.0<br>00 00 a<br>Single Pulse 50mm x 50mm<br>100 PAINESLPNCTTA Et tt|t+ 4 T pc A=25 TT oC TTEHH 2.52.0 |PINa | IN NY |NK 4 2oz FR-425mm x 25mm  i |<br>2oz FR-4<br>50mm x 50mm<br>1.5<br>10 Hie: 2oz FR-4 PT KUNA |<br>eeSa Seat mmntiiiaeeatiiamseet eetimes tiamatitl 1.0 NS WNIN<br>ES 25mm x 25mm  0.5 PT TT | RAO<br>1 2oz FR-4 0.0 Ny<br>100μ ‘ise µ 1m 10m 100m 1 10 100 1k r 0 20 40 S 60 80 100 120 140 160<br>Pulse Width (s) o<br> Temperature ( C)<br>Pulse Power Dissipation Derating Curve<br>  Collector Current (A)   Collector Current (A)<br>IC  IC<br>oC/W) oC/W)<br> Thermal Resistance ( Thermal Resistance (<br> Max Power Dissipation (W)  Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


**Pulse Power Dissipation** 

3 of 7 **www.diodes.com** 

FZT751Q Document number: DS36963  Rev. 3 - 2 

March 2018 © Diodes Incorporated 

**FZT751Q** 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~oF~~|**Symbol**<br>~~oF~~|**Min**<br>~~oF~~|**Typ**<br>~~Oo~~|**Max**<br>~~Oo~~|**Unit**<br>~~Oo~~|**Test Condition**<br>~~Oo~~|
|Collector-Base Breakdown Voltage<br>~~oF~~|BVCBO<br>~~oF~~|-80<br>~~oF~~|—<br>~~Oo~~|—<br>~~Oo~~|V<br>~~Oo~~|IC= -100µA<br>~~Oo~~|
|Collector-Emitter Breakdown Voltage(Note 10)<br>~~7~~|BVCEO<br>~~7~~|-60<br>~~7~~|—<br>~~7~~|—<br>~~7~~|V<br>~~7~~|IC= -10mA<br>~~7~~|
|Emitter-Base Breakdown Voltage<br>~~7~~|BVEBO<br>~~7~~|-7<br>~~7~~|—<br>~~7~~|—<br>~~7~~|V<br>~~7~~<br>~~EE~~|IE= -100µA<br>~~7~~|
|Collector Cut-off Current<br>~~EE~~|ICBO<br>~~EE~~|—<br>~~EE~~|<-1<br>~~EE~~|-100<br>~~EE~~|nA<br>~~EE~~<br>~~EE~~|VCB= -60V<br>~~EE~~|
|||—<br>~~EE~~|—<br>~~EE~~<br>~~GO~~|-10<br>~~EE~~<br>~~GO~~|µA<br>~~EE~~<br>~~EE~~<br>~~GO~~|VCB= -60V,TA= +100°C<br>~~EE~~|
|Emitter Cut-off Current<br>~~GO~~<br>~~oF~~|IEBO<br>~~GO~~<br>|—<br>~~GO~~<br>|<-1<br>~~GO~~<br>~~GO~~<br>~~EE~~<br>|-100<br>~~GO~~<br>~~GO~~<br>~~EE~~<br>|nA<br>~~EE~~<br>~~GO~~<br>~~GO~~<br>~~EE~~<br>|VEB= -4V<br>~~GO~~<br>~~EE~~<br>|
|Collector-Emitter Saturation Voltage (Note 10)<br>~~ee~~<br>~~oF~~|VCE(SAT)<br>~~ee~~<br>~~eee~~|—<br>~~ee~~<br>|-0.15<br>~~GO~~<br>~~ee~~<br>~~EE~~<br>|-0.3<br>~~GO~~<br>~~ee~~<br>~~EE~~<br>|V<br>~~GO~~<br>~~ee~~<br>~~EE~~<br>~~eee~~|IC= -1A,IB= -100mA<br>~~ee~~<br>~~EE~~<br>|
|||—<br>~~ee~~<br>~~eee~~|-0.45<br>~~ee~~<br>~~EE~~<br>~~eee~~|-0.6<br>~~ee~~<br>~~EE~~<br>~~eee~~||IC= -3A,IB= -300mA<br>~~ee~~<br>~~EE~~<br>~~eee~~|
|Base-Emitter Saturation Voltage(Note 10)<br>~~oF~~|VBE(SAT)<br>~~eee~~|—<br>~~eee~~|-0.9<br>~~EE~~<br>~~eee~~|-1.25<br>~~EE~~<br>~~eee~~|V<br>~~EE~~<br>~~eee~~|IC= -1A,IB= -100mA<br>~~EE~~<br>~~eee~~|
|Base-Emitter Turn-On Voltage(Note 10)<br>~~oF~~|VBE(ON)<br>~~eee~~|—<br>~~eee~~|-0.8<br>~~EE~~<br>~~eee~~|-1.0<br>~~EE~~<br>~~eee~~|V<br>~~EE~~<br>~~eee~~|IC= -1A,VCE= -2V<br>~~EE~~<br>~~eee~~|
|DC Current Gain (Note 10)<br>~~oF ~~<br>~~eS~~|hFE<br> ~~eee~~<br>~~eS~~<br>~~ee~~|70<br>~~eee~~<br>~~eS~~|200<br>~~EE~~<br>~~eee~~<br>~~eS~~|—<br>~~EE~~<br>~~eee~~<br>~~eS~~|—<br>~~EE~~<br>~~eee~~<br>~~eS~~<br>~~ee~~|IC= -50mA,VCE= -2V<br>~~EE~~<br>~~eee~~<br>~~eS~~|
|||100<br>~~eS~~|200<br>~~eS~~|300<br>~~eS~~||IC= -500mA,VCE= -2V<br>~~eS~~|
|||80<br>~~eS~~<br>~~a~~|170<br>~~eS~~<br>~~ee~~|—<br>~~eS~~||IC= -1A,VCE= -2V<br>~~eS~~<br>~~Po~~|
|||40<br>~~eS~~<br>~~a~~<br>~~ee~~|150<br>~~eS~~<br>~~ee~~<br>~~ee~~|—<br>~~eS~~<br>~~ee~~||IC= -2A,VCE= -2V<br>~~eS~~<br>~~Po~~|
|Current Gain-Bandwidth Product<br>~~ee~~|fT<br>~~ee~~<br>~~ee~~|100<br>~~a~~<br>~~ee~~<br>~~ee~~|140<br>~~ee~~<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|MHz<br>~~ee~~<br>~~ee~~|VCE= -5V, IC= -100mA<br>f = 100MHz<br>~~Po~~<br>~~ee~~|
|Turn-On Time<br>~~SG~~|tON<br>~~ee ~~<br>~~SG~~|—<br> ~~ee ~~|40<br> ~~ee ~~|—<br> ~~ee ~~|ns<br> ~~ee~~|VCC= -10V, IC= -500mA<br>IB1= IB2= -50mA|
|Turn-Off Time|tOFF|—|450|—|ns||
|Output Capacitance|COBO|—|—|30|pF|VCB= -10V,f = 1MHz|



Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. 

4 of 7 **www.diodes.com** 

FZT751Q Document number: DS36963  Rev. 3 - 2 

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**FZT751Q** 

## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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**----- Start of picture text -----**<br>
– (Volts)<br>CE(SAT)<br>V<br>**----- End of picture text -----**<br>


VCE(SAT) v IC 

VBE(ON) v IC 

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**----- Start of picture text -----**<br>
ans2HHHl CHHIF<br> SeBul<br>=HEH HHH  IO<br>OHHoT |Cll CO lea 10 nt<br>aE HHHail atl<br>—atl LAR ataHh—lclla=10IO<br>|| Cl[HH LetAT<br>08EEEHh anilCon HHH il | ealios<br>mal | HE eTpreh aoe<br>aoe eet aie<br>alCo Tot ianitil<br>0.00 001 0.0 1<br>Ic - Co llec rren<br>VBE(SAT) v IC<br>– (Volts)<br>BE(SAT)<br>V<br>**----- End of picture text -----**<br>


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FZT751Q Document number: DS36963  Rev. 3 - 2 

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**FZT751Q** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT223** 

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**----- Start of picture text -----**<br>
D<br>b1 Q<br>C<br>z “| |<br>7 t<br>i<br>E E1<br>Gauge<br>Plane zi<br>0.25 if<br>Seating L<br>Plane<br>a e1 b vt<br>||.<br>LL e<br>| Le<br>== A A1 [SL]<br>7°<br>0°-10°<br>7°<br>**----- End of picture text -----**<br>


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Se SOT223<br>Dim  Min  Max  Typ<br>A 1.55  1.65  1.60<br>r_esee<br>Fd A1 0.010 0.15  0.05<br>b 0.60  0.80  0.70<br>esee<br>b1 2.90  3.10  3.00<br>es<br>C 0.20  0.30  0.25<br>es<br>D 6.45  6.55  6.50<br>esee<br>E 3.45  3.55  3.50<br>es<br>E1 6.90  7.10  7.00<br>e -  -  4.60<br>e1 -  -  2.30<br>esrT L 0.85 1.05 0.95<br>Q 0.84  [| 0.94  fT 0.89<br>es<br>Ft~‘“CSCOCO*™*~*~*d All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT223** 

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**----- Start of picture text -----**<br>
| X1 7<br>ry ry<br>Y1<br>~<br>C1 Y2<br>Y<br>i‘OO a |<br>Ll X Le C<br>**----- End of picture text -----**<br>


|**Dimensions Value**|**Dimensions Value(in mm)**|
|---|---|
|**C**|2.30|
|**C1 **|6.40|
|**X**|1.20|
|**X1**|3.30|
|**Y**|1.60|
|**Y1**|1.60|
|**Y2**|8.00|



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FZT751Q Document number: DS36963  Rev. 3 - 2 

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**FZT751Q** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2018, Diodes Incorporated 

**www.diodes.com** 

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FZT751Q Document number: DS36963  Rev. 3 - 2 

March 2018 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/FZT751QTA/bipolar-bjt-single-transistor-pnp-60-v-3-a-w-sot)
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- [Supplier page](https://es.farnell.com/diodes-inc/fzt751qta/trans-pnp-60v-3a-150deg-c-2w/dp/3943257RL)
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