# Bipolar (BJT) Single Transistor, PNP, 25 V, 3 A, 2 W, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:9526579/)

**URL**: https://novapart.co/products/FZT749/bipolar-bjt-single-transistor-pnp-25-v-3-a-2-w-sot
**SKU**: FZT749
**Manufacturer**: DIODES INC.
**Price**: €0.1880
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-25V; Transition Frequency ft:160MHz; Power Dissipation Pd:2W; DC Collector Current:3A; DC Current Gain hFE:200hFE; Transistor Case St

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 160MHz |
| Transistor Case Style | SOT-223 |
| Dc Current Gain Hfe Min | 200hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 3A |
| Collector Emitter Voltage Max | 25V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9526579/)

~~@~~ **Green** 

**A Product Line of Diodes Incorporated** ZETEX **FZT749** ~~|~~ 

## DIODES 

## **25V PNP HIGH PERFORMANCE TRANSISTOR IN SOT223** 

## **Features** 

## **Mechanical Data** 

- BVCEO > -25V 

- IC = -3A High Continuous Current 

- ICM = -8A Peak Pulse Current 

- Low Saturation Voltage VCE(sat) < -300mV @ -1A 

- Complementary NPN Type: FZT649 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

   - Case: SOT223 

   - Case Material: Molded Plastic. “Green” Molding Compound; UL Flammability Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish - Matte Tin Plated Leads; Solderable per MIL-STD-202, Method 208 

   - Weight: 0.112 grams (Approximate) 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

## **Applications** 

- MOSFET and IGBT Gate Driving 

||SOT223|||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||**C**|||||||||||
||@||**E**<br>**B**<br>C<br> ~~O~~l~~:~~|||||||||||E<br>C<br>B||
||Top View||Device Symbol||||||||Top View|||||
||||||||||||Pin-Out|||||
|**Ordering Information**(Notes 4 & 5)||(Notes 4 & 5)||||||||||||||
|||||||||||||||||
|**Product**|**Compliance**||**Marking**||||**Reel size(inches)**||||**Tape width**||**e width(mm)**||**Quantity per reel**|
|FZT749TA|AEC-Q101||FZT749||||7||||12||||1,000|
|FZT749QTA|Automotive||FZT749||||7||||12||||1,000|
|FZT749TC|AEC-Q101||FZT749||||13||||12||||4,000|
|FZT749QTC|Automotive||FZT749||||13||||12||||4,000|



## **Ordering Information** (Notes 4 & 5) 

- Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. Automotive products are AEC-Q101 qualified and are PPAP capable.  Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. 

   5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

SOT223 

**==> picture [50 x 33] intentionally omitted <==**

**----- Start of picture text -----**<br>
FZT<br>749<br>YWW<br>**----- End of picture text -----**<br>


FZT 749 = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 5= 2015) WW or WW = Week Code (01~53) 

1 of 7 **www.diodes.com** 

FZT749 Document Number DS33162 Rev. 6 - 2 

June 2015 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**FZT749** || 

## **Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|-35|V|
|Collector-Emitter Voltage|VCEO|-25|V|
|Emitter-Base Voltage|VEBO|-7|V|
|Continuous Collector Current|IC|-3|A|
|Peak Pulse Current|ICM|-8|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation|(Note 6)|PD|3.0|W|
||(Note 7)||2.0||
||(Note 8)||1.6||
||(Note 9)||1.2||
|Thermal Resistance, Junction to Ambient|(Note 6)|RJA|41.7|°C/W|
||(Note 7)||62.5||
||(Note 8)||78.1||
||(Note 9)||104||
|Thermal Resistance Junction to Lead|(Note 10)|RJL|12.9||
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



## **ESD Ratings** (Note 9) 

|**ESD Ratingsgss **(Note 9)|**ESD Ratingsgss **(Note 9)|**ESD Ratingsgss **(Note 9)|**ESD Ratingsgss **(Note 9)|**ESD Ratingsgss **(Note 9)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|Electrostatic Discharge - Human BodyModel|ESD HBM|4,000|V|3A|
|Electrostatic Discharge - Machine Model|ESD MM|400|V|C|



Notes: 6. For a device mounted with the collector lead on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 

7. Same as Note 6, except the device is mounted on 25mm x 25mm 2oz copper. 

8. Same as Note 6, except the device is mounted on 25mm x 25mm 1oz copper. 

9. Same as Note 6, except the device is mounted on minimum recommended pad layout. 

10. Thermal resistance from junction to solder-point (at the end of the collector lead). 

11. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

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FZT749 Document Number DS33162 Rev. 6 - 2 

June 2015 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**FZT749** 

## **Thermal Characteristics and Derating Information** 

**==> picture [453 x 549] intentionally omitted <==**

**----- Start of picture text -----**<br>
Pe<br>E 10 VCE(sat) SS 10 VCE(sat)<br>So LLUCTA Limit RAIN LTTTH TTT] Limit<br>1 DC 1 DC<br>S8 ESS100ms SHH 1s PARSINGHHH 1s<br>aa]S Dc wore HLL 100ms FTTHLTINS 100ms<br>B018csoO 100m i 25mm x 25mm  Nn T ve amb=25 SEEpe °C 10ms 1ms NSETL 100m 50mm x 50mm T amb =25°C 10ms 1ms<br>2oz FR4 100µs 2oz FR4 100µs<br>10m 10m<br>oor LIN EET EH<br>1 1 10 10 100 1 10<br>Vce VCE -   Collector-Emitter Voltage (V) Collector Voltage (Volts) VCE  Collector-Emitter Voltage (V)<br>Safe Operating Area Safe Operating Area Safe Operating Area<br>70 50<br>Ty LOLOL<br>60 T amb =25°C T amb =25°C<br>a 25mm x 25mm  OC onc ea 40 al 50mm x 50mm  1 RHA<br>50 a 2oz FR4 COMIC al 2oz FR4 A<br>HH on al all<br>30<br>40<br>D=0.5<br>cree croc) D=0.5 ELea<br>30 Seer", MAN WY 20 pe snes" t all<br>Single Pulse<br>20 D=0.2 D=0.2 Single Pulse<br>Tay—aIeae i g <a D=0.05 1 10 ieeeanes SLAIN.aa l I l<br>10 ae aos MA D=0.1 CTmerce D=0.1D=0.05<br>0 SSCA cul COMETH 0 ei Li | WM LAT ET<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br> Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Transient Thermal Impedance<br>3.0<br>100 2 NSE Single Pulse T amb =25°C Tl a 50mm x 50mm<br>ASTM LT LIME Il 2.5 PIN [J 2oz FR4 mi<br>PTT eT TTT TT TT TTT<br> , 50mm x 50mm  ill) 2.0 NJ SS 25mm x 25mm  2oz FR4<br>2oz FR4 1.5<br>10 TIN | aN<br>fioe<br>1.0<br>ee eer eects eed emai aN<br>HB 25mm x 25mm  EES 0.5 mm \<br>2oz FR4<br>1 ail thm }=© 0.0 6©6©>CE LEQ NS<br>100µ 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 120 140 160<br>Pulse Width (s)  Temperature (°C)<br>Pulse Power Dissipation Derating Curve<br>  Collector Current (A)   Collector Current (A)<br>IC  IC<br> Thermal Resistance (°C/W) Thermal Resistance (°C/W)<br> Max Power Dissipation (W)  Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


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June 2015 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**FZT749** 

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iace 6 2) oO 8 AY 8 Oo<br>**----- End of picture text -----**<br>


## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|Collector-Base Breakdown Voltage|BVCBO|-35|—|—|V|IC= -100µA|
|Collector-Emitter Breakdown Voltage (Note 12)|BVCEO|-25|—|—|V|IC= -10mA|
|Emitter-Base Breakdown Voltage|BVEBO|-7|—|—|V|IE= -100µA|
|Collector Cut-Off Current|ICBO|—|<1|-100|nA|VCB= -30V|
|||—|—|-10|µA|VCB= -30V, TAMB= +100°C|
|Emitter Cut-Off Current|IEBO|—|<1|-100|nA|VEB= -5.6V|
|Collector-Emitter Saturation Voltage (Note 12)|VCE(SAT)|—|-0.12|-0.3|V|IC= -1A, IB= -100mA|
|||—|-0.40|-0.6||IC= -3A, IB= -300mA|
|Base-Emitter Saturation Voltage (Note 12)|VCE(SAT)|—|-0.9|-1.25|V|IC= -1A, IB= -100mA|
|Base-Emitter Turn-On Voltage (Note 12)|VBE(ON)|—|-0.8|-1.0|V|IC= -1A, VCE= -2V|
|DC Current Gain (Note 12)|hFE|70|200|—|—|IC= -50mA, VCE= -2V|
|||100|200|300||IC= -1A, VCE= -2V|
|||75|570|—||IC= -2A, VCE= -2V|
|||15|50|—||IC= -6A, VCE= -2V|
|Current Gain-Bandwidth Product (Note 12)|fT|100|160|—|MHz|VCE= -5V, IC= -100mA<br>f = 100MHz|
|Turn-On Time|ton|—|40|—|ns|VCC= -10V, IC= -500mA<br>IB1= IB2= -50mA|
|Turn-Off Time|toff|—|450|—|ns||
|Output Capacitance|Cobo|—|55|100|pF|VCB= -10V, f = 1MHz|



Note: 12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. 

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FZT749 Document Number DS33162 Rev. 6 - 2 

June 2015 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**FZT749** 

## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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FZT749 Document Number DS33162 Rev. 6 - 2 

June 2015 © Diodes Incorporated 

**A Product Line of Diodes Incorporated FZT749** ~~es~~ **Package Outline Dimensions** Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

**==> picture [402 x 219] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>b1 Q<br>C SOT223<br>Dim  Min  Max  Typ<br>A 1.55  1.65  1.60<br>Coe a y fot a — A1 0.010 0.15  0.05<br>b 0.60  0.80  0.70<br>b1 2.90  3.10  3.00<br>E E1 C 0.20  0.30  0.25<br>D 6.45  6.55  6.50<br>GaugePlane | === E 3.45  3.55  3.50<br>E1 6.90  7.10  7.00<br>0.25<br>Seating L e -  -  4.60<br>Plane e1 -  -  2.30<br>e1 b L 0.85 1.05 0.95<br>Q 0.84  0.94  0.89<br>ion e a Sane All Dimensions in mm<br>A A1 7°<br>0°-10°<br>7°<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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Dimensions Value (in mm)<br>C  2.30<br>C1  6.40<br>X  1.20<br>X1  3.30<br>Y  1.60<br>Y1  1.60<br>Y2  8.00<br>==<br>**----- End of picture text -----**<br>


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FZT749 Document Number DS33162 Rev. 6 - 2 

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**A Product Line of Diodes Incorporated FZT749** [ 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated **www.diodes.com** 

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