# IGBT Module, Single Switch, 900 A, 1.75 V, 4.3 kW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2709939/)

**URL**: https://novapart.co/products/FZ900R12KE4HOSA1/igbt-module-single-switch-900-a-175-v-43-kw-150-c
**SKU**: FZ900R12KE4HOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €110.7300
**Stock**: 10+
**Lead Time**: 92 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:900A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:4.3kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transis

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | 62mm C |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Tab |
| Power Dissipation | 4.3kW |
| Igbt Configuration | Single Switch |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 900A |
| Power Dissipation Pd | 4.3kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 900A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Saturation Voltage Vce(On) | 1.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2709939/)

IGBT-模块 IGBT-modules 

## FZ900R12KE4 

VCES = 1200V IC nom = 900A / ICRM = 1800A 

## **典型应用** 

- 大功率变流器 

- • 电机传动 • UPS系统 • 风力发电机 

- 

- 

- 

- 

## **电气特性** 

- 

- 低开关损耗 

- • 无与伦比的坚固性 

- VCEsat 7 

- • (i V CEsat 

- 

- 

- 

- VCEsat 

- CEsat 

## **机械特性** 

- 

- 

- 高爬电距离和电气间隙 

- • 高功率密度 

- • 绝缘的基板 • 标封装 

- 

- 

- 

- 

- 

- 

1 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FZ900R12KE4 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FZ900R12KE4<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:MK<br>approvedby:WR<br>dateofpublication:2013-11-04<br>revision:2.3<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 95°C, Tvj max= 175°C<br>IC nom<br>900<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>1800<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>4300<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 900 A, VGE= 15 V<br>IC= 900 A, VGE= 15 V<br>IC= 900 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,00<br>2,05<br>2,10<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 32,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>7,40<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,9<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>56,0<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>2,20<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 900 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,5Ω<br>td on<br>0,24<br>0,25<br>0,26<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 900 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,5Ω<br>tr<br>0,09<br>0,10<br>0,11<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 900 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 0,9Ω<br>td off<br>0,61<br>0,64<br>0,66<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 900 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 0,9Ω<br>tf<br>0,10<br>0,14<br>0,15<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 900 A, VCE= 600 V, LS= 60 nH<br>VGE= ±15 V, di/dt = 6000 A/µs (Tvj= 150°C)<br>RGon= 1,5Ω<br>Eon<br>40,0<br>55,0<br>60,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 900 A, VCE= 600 V, LS= 60 nH<br>VGE= ±15 V, du/dt = 3500 V/µs (Tvj= 150°C)<br>RGoff= 0,9Ω<br>Eoff<br>80,0<br>115<br>130<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>3600<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,035 K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,016<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

## 技术信息�/�Technical�Information IGBT-模块IGBT-modules FZ900R12KE4 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200|1200|V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|900|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|1800|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|91000<br>88000<br>|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 900 A, VGE= 0 V<br>IF= 900 A, VGE= 0 V<br>IF= 900 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,90<br>1,85<br>1,80|2,45|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 900 A, - diF/dt = 6000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||540<br>720<br>750||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 900 A, - diF/dt = 6000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||80,0<br>150<br>180||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 900 A, - diF/dt = 6000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||40,0<br>75,0<br>85,0||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,06|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,027||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



date�of�publication:�2013-11-04 revision:�2.3 

prepared�by:�MK approved�by:�WR 

3 

IGBT-模块 IGBT-modules 

## FZ900R12KE4 

## **初步数据** 

|#R_<br>| Module||||||
|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~<br> ~~ee ~~<br>BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||4,0<br>Cu<br>Al2O3|kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||25,0<br>19,0|mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|25,0<br>10,0<br>> 400<br>typ.<br>max.<br>~~ee~~|mm|
|外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||0,01|K/W|
|杂散电感,模块||LsCE||16|nH|
|模块引线电阻,端子-芯片<br>储存温度<br>模块安装的安装扭距<br>terminals ~~- chip~~<br>~~Storage temperature~~<br>Mounting torque for modul mounting|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>~~ee ~~<br>HeeM6ARSEAR VAY AyAEAET<br>Screw M6<br>- Mounting according to valid application note|RCC'+EE'<br>0,50<br>Tstg<br>-40<br>125<br>M<br>3,00<br>-<br>6,00<br>~~tt ff~~<br> ~~ee ee~~|||mΩ<br>°C<br>Nm|
|端子联接扭距<br>Terminal connection torque|BeeM4AHEAD AVAY OV EAETR<br>Screw M4<br>- Mounting<br>according to valid application note<br>theeM6MIB<br>SAT ee<br>Screw M6<br>- Mounting according to valid application note|M|1,1<br>2,5|-<br>-<br>2,0<br>5,0|Nm<br>Nm|
|重量<br>Weight||G||340|g|



4 

IGBT-模块 IGBT-modules 

## FZ900R12KE4 

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初步数据<br>**----- End of picture text -----**<br>


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IC CE) IC CE)<br>VGE ASV Tvj = 150°C<br>1800 1800<br>1700 i Tvj = 25°C nd ee 1700 [ VGE = 19V peer<br>1600 Tvj = 125°C 1600 VGE = 17V<br>(i Tvj = 150°C VGE = 15V El<br>1500 | cece ro 1500 | VGE = 13V oPP| ge I<br>1400 ee ee ee ee eee 1400 I VVGEGE = 11V = 9V P| fe ely | |<br>13001200 eea eeee eeee eeee eeee eeeee 13001200 [cee e eede<br>1100 1100<br>1000 ee ee ee ee ee ee 1000 a eeee<br>900800 PTa ee ee eee 900800 aP|ee eee eee<br>700 ee ee ee 700 eeete ||<br>a eae eee<br>600 600<br>500 a ee ee 500 Pott ee TT<br>400 ee ee ee eee 400 eeeee<br>300 ee ee ee ee 300 Bea ee<br>200 ee e ee eeeeee e e eee 200 |re| wTre| | | | tl lt<br>100 100<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>seMMIStE IGBT, AIEEE (GAB!) FPGA IGBT, IER ( HAZ)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC GE) Eon C off C)<br>VCE seov VGE eR Gon or Ω ,R Goff =09 Ω ,V CE =600V<br>1800 300<br>1700 Tvj = 25°C Eon, Tvj = 125°C<br>1600 S Tvj = 125°C o 270 P Eoff, Tvj = 125°C OO<br>1500 I B Tvj = 150°C f e oo EEonoff, T, Tvjvj = 150°C = 150°C s<br>240<br>1400 | f E__<br>1300 a<br>210<br>1200<br>1100 is aeed 180<br>1000<br>900 eePEERSeee 150 COCLy<br>800<br>ae oe<br>700 ee ee eee 120 Le<br>600<br>ee see eae<br>90<br>500<br>ee ae a a<br>400<br>Le a A 60 ce<br>300<br>ee na =<br>200 fe a 30<br>100<br>0 Pea e|e) 0 PEPE<br>5 6 7 8 9 10 11 12 13 0 200 400 600 800 1000 1200 1400 1600 1800<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


5 

IGBT-模块 IGBT-modules 

## FZ900R12KE4 

## **初步数据** 

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**----- Start of picture text -----**<br>
Eon =f{(R),E G off =f(R G) ZthJC =f (t)<br>VGE =+15V,1| C =900A,V CE =600V<br>500 0,1<br>Eon, Tvj = 125°C ZthJC : IGBT<br>450 —_ Eoff, Tvj = 125°C 1 ft |] 4 < H—(oe t Soot ToomFt<br>Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C<br>400 Se eaLo Oe | Titi | tii fT Tt<br>tf P I|<br>PT T LUI<br>350<br>Se a eeae N e<br>300<br>7 LAAT<br>250 0,01 PI ZL LM EIT<br>a<br>ERP [Aaa] Tt<br>200 Pf | | yet ff rT TT TE ee eeTTT]|<br>150 | | | LY). | |ee| idegee YraOVE| TT TTie TT<br>100 Pokangeeem TT || | PV I ETT| TT|<br>i:    1    2    3    4<br>50 ann 200i r τ ii[K/W]:   [s]:    A 0,0021   0,01    0,01155   0,02    0,0112   0,05    0,01015   0,1<br>0 Pf | tT tt | td 0,001 — ——<br>0 1 2 3 4 5 6 7 8 9 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


IC =f(V CE) VGE SVR Goff =0.9 Ω ,T vj =150°C 

IF =f(V F) 

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2200 1800<br>IC, Modul 1700 Tvj = 25°C<br>2000 EeL IC, Chip LLLL) 1600 fF TTvjvj P  = 125°C = 150°C ees<br>1500<br>1800 Pypyft | | | ll [sa a e<br>1400<br>1600 eee 1300 R R R<br>ee<br>1200<br>ee ee<br>1400<br>1200 Pf | fe 11001000 PtSCEPC| | | hdTlcdElrE rE dE LEie<br>900<br>ee eee aoe<br>1000 800<br>ee 700 eePt | | | dElcdElrE rT YE TT<br>800<br>600<br>600 ee ee eee ee 500 |9| | | dT TT Ta<br>400<br>Py EEE AEE<br>400<br>300<br>ee 200 P| | | dT Pee<br>200<br>100<br>0 PP ee eeeNN 0 | e PCT| [e eta7[|e| | | dtd] ld]<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6<br>VCE  [V] VF [V]<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

IGBT-模块 IGBT-modules 

## FZ900R12KE4 

## **初步数据** 

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**----- Start of picture text -----**<br>
E arin rec F)  losses Diode, Inverter (typical) E owt rec G  losses )  Diode, Inverter (typical)<br>RGon =1.5 Ω ,V CE =600V IF =900A,V CE =600V<br>110 | 120 |<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>100 S Erec, Tvj = 150°C y 110 e Erec, Tvj = 150°C s<br>100<br>90 P ET | ep-_ leq —— | | | |<br>90<br>80 Pt | dep i _| pf} fp |tt<br>80<br>70<br>CCleRECCT) REE<br>70<br>60<br>60<br>50<br>50<br>40<br>40<br>SEE<br>30 E EE) 30 ANSE<br>20 GCOEEE EERE<br>20<br>10 ARE EEE 10 SEE<br>0 0<br>0 200 400 600 800 1000 1200 1400 1600 1800 0 2 4 6 8 10 12 14 16<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


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ZthJC =f (t)<br>0,1 (eee<br>ZthJC : Diode<br>H—Foo ee<br>(ttt T C TTT TTT<br>a<br>PT TE TT<br>ae 2a<br>EAEZEEE ELT<br>CTE TE<br>0,01 OE)<br>YrSee| TALfl TTeeeeeail est ee<br>A<br>PALEETT T TTTETET<br>aaALUM ELIE |||ECT<br>i:    1    2    3    4<br>ri[K/W]:   0,0036   0,0198   0,0192   0,0174<br>τ i[s]:    0,01    0,02    0,05    0,1<br>||<br>0,001<br>0,001 0,01 0,1 1 10<br>t [s]<br> [K/W]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


7 

## 技术信息�/�Technical�Information 

> IGBT-模块IGBT-modules FZ900R12KE4 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

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**----- Start of picture text -----**<br>
接线图�/�circuit_diagram_headline<br>封装尺寸�/�package�outlines<br>In fin e o n<br>**----- End of picture text -----**<br>


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prepared�by:�MK date�of�publication:�2013-11-04<br>approved�by:�WR revision:�2.3<br>**----- End of picture text -----**<br>


8 

IGBT-模块 IGBT-modules 

## FZ900R12KE4 

## **初步数据** 

## **使用条件和条款** 

## 使用条件和条款 

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## Links

- [View this product on Novapart](https://novapart.co/products/FZ900R12KE4HOSA1/igbt-module-single-switch-900-a-175-v-43-kw-150-c)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/fz900r12ke4hosa1/igbt-module-n-ch-1-2kv-900a/dp/2709939)
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