# IGBT Module, Single Switch, 750 A, 3 V, 125 °C, Module
**URL**: https://novapart.co/products/FZ750R65KE3NOSA1/igbt-module-single-switch-750-a-3-v-125-c
**SKU**: FZ750R65KE3NOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €2002.7400
**Stock**: 10+
**Lead Time**: 148 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 9Pins |
| Product Range | - |
| Igbt Technology | IGBT 3 [Trench/Field Stop] |
| Igbt Termination | Tab |
| Power Dissipation | - |
| Igbt Configuration | Single Switch |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 750A |
| Power Dissipation Pd | - |
| Transistor Case Style | Module |
| Operating Temperature Max | 125°C |
| Junction Temperature Tj Max | 125°C |
| Continuous Collector Current | 750A |
| Collector Emitter Voltage Max | 6.5kV |
| Collector Emitter Voltage V(Br)Ceo | 6.5kV |
| Collector Emitter Saturation Voltage | 3V |
| Collector Emitter Saturation Voltage Vce(On) | 3V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3514421/)
FZ750R65KE3
VCES = 6500V IC nom = 750A / ICRM = 1500A
- Mittelspannungsantriebe
- Traktionsumrichter
- CEsat
- AlSiC Bodenplatte für erhöhte thermische Lastwechselfestigkeit
- Erweiterter Lagertemperaturbereich bis zu Tstg = -55°C
-
- Gehäuse mit erweiterten
-
-
-
- CEsat
- AlSiC base plate for increased thermal cycling capability
- Extended storage temperature down to Tstg = -55°C
-
- Package with enhanced insulation of 10.4kV AC 10s
-
**Digit**
Datasheet www.infineon.com
2018-01-15
FZ750R65KE3
**==> picture [86 x 38] intentionally omitted <==**
|**IGBT,Wechselrichter/IGBT,Inverter**
**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Wechselrichter/IGBT,Inverter**
**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung
Collector-emittervoltage|Tvj= 125°C
Tvj= 25°C
Tvj= -50°C|VCES|6500
6500
5900|||V|
|Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent|TC= 80°C, Tvj max= 150°C|IC nom|750|||A|
|PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|1500|||A|
|Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage|IC= 750 A, VGE= 15 V
IC= 750 A, VGE= 15 V
Tvj= 25°C
Tvj= 125°C|VCE sat||3,00
3,70|3,40
4,20|V
V|
|Gate-Schwellenspannung
Gatethresholdvoltage|IC= 100 mA, VCE= VGE, Tvj= 25°C|VGEth|5,40|6,00|6,60|V|
|Gateladung
Gatecharge|VGE= -15 V ... +15 V, VCE= 3600V|QG||31,0||µC|
|InternerGatewiderstand
Internalgateresistor|Tvj= 25°C|RGint||0,75||Ω|
|Eingangskapazität
Inputcapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||205||nF|
|Rückwirkungskapazität
Reversetransfercapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||3,20||nF|
|Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent|VCE= 6500 V, VGE= 0 V, Tvj= 25°C|ICES|||5,0|mA|
|Gate-Emitter-Reststrom
Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||400|nA|
|Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload|IC= 750 A, VCE= 3600 V
VGE= ±15 V
RGon= 1,0Ω
Tvj= 25°C
Tvj= 125°C|td on||0,70
0,80||µs
µs|
|Anstiegszeit,induktiveLast
Risetime,inductiveload|IC= 750 A, VCE= 3600 V
VGE= ±15 V
RGon= 1,0Ω
Tvj= 25°C
Tvj= 125°C|tr||0,33
0,40||µs
µs|
|Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload|IC= 750 A, VCE= 3600 V
VGE= ±15 V
RGoff= 6,8Ω
Tvj= 25°C
Tvj= 125°C|td off||7,30
7,60||µs
µs|
|Fallzeit,induktiveLast
Falltime,inductiveload|IC= 750 A, VCE= 3600 V
VGE= ±15 V
RGoff= 6,8Ω
Tvj= 25°C
Tvj= 125°C|tf||0,40
0,50||µs
µs|
|EinschaltverlustenergieproPuls
Turn-onenergylossperpulse|IC= 750 A, VCE= 3600 V, LS= 280 nH
VGE= ±15 V
RGon= 1,0Ω
Tvj= 25°C
Tvj= 125°C|Eon||4200
6500||mJ
mJ|
|AbschaltverlustenergieproPuls
Turn-offenergylossperpulse|IC= 750 A, VCE= 3600 V, LS= 280 nH
VGE= ±15 V
RGoff= 6,8Ω
Tvj= 25°C
Tvj= 125°C|Eoff||3600
4200||mJ
mJ|
|Kurzschlußverhalten
SCdata|VGE ≤15 V, VCC= 4500 V
VCEmax= VCES-LsCE·di/dt
Tvj= 125°C
tP ≤10 µs,|ISC||4500||A|
|Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase|proIGBT/perIGBT|RthJC|||8,70|K/kW|
|Wärmewiderstand,GehäusebisKühlkörper
Thermalresistance,casetoheatsink|proIGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||8,80||K/kW|
|TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions||Tvj op|-50||125|°C|
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## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage|Tvj= 125°C
Tvj= 25°C
Tvj= -50°C|VRRM|6500
6500
5900|6500
6500
5900||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom
ContinuousDCforwardcurrent||IF|750|||A|
|PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|1500|||A|
|Grenzlastintegral
I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|470|||kA²s|
|Spitzenverlustleistung
Maximumpowerdissipation|Tvj= 125°C|PRQM|3000|||kW|
|Mindesteinschaltdauer
Minimumturn-ontime||ton min|10,0|||µs|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung
Forwardvoltage|IF= 750 A, VGE= 0 V
IF= 750 A, VGE= 0 V
Tvj= 25°C
Tvj= 125°C|VF||3,00
2,95|3,50
3,50|V
V|
|Rückstromspitze
Peakreverserecoverycurrent|IF= 750 A, - diF/dt = 3000 A/µs (Tvj=125°C)
VR= 3600 V
VGE= -15 V
Tvj= 25°C
Tvj= 125°C|IRM||1100
1200||A
A|
|Sperrverzögerungsladung
Recoveredcharge|IF= 750 A, - diF/dt = 3000 A/µs (Tvj=125°C)
VR= 3600 V
VGE= -15 V
Tvj= 25°C
Tvj= 125°C|Qr||850
1600||µC
µC|
|AbschaltenergieproPuls
Reverserecoveryenergy|IF= 750 A, - diF/dt = 3000 A/µs (Tvj=125°C)
VR= 3600 V
VGE= -15 V
Tvj= 25°C
Tvj= 125°C|Erec||1400
3000||mJ
mJ|
|Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||18,5|K/kW|
|Wärmewiderstand,GehäusebisKühlkörper
Thermalresistance,casetoheatsink|proDiode/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||14,0||K/kW|
|TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions||Tvj op|-50||125|°C|
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FZ750R65KE3
**==> picture [86 x 38] intentionally omitted <==**
## **Modul�/�Module**
|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung
Isolationtestvoltage|RMS, f = 50 Hz, t = 10 s|VISOL|10,4
|||kV|
|Teilentladungs-Aussetzspannung
Partialdischargeextinctionvoltage|RMS, f = 50 Hz, QPDtyp 10 pC|VISOL|5,1
|||kV|
|Kollektor-Emitter-Gleichsperrspannung
DCstability|Tvj= 25°C, 100 fit|VCE D|3800|||V|
|MaterialModulgrundplatte
Materialofmodulebaseplate|||AlSiC||||
|InnereIsolation
Internalisolation|Basisisolierung(Schutzklasse1,EN61140)
basicinsulation(class1,IEC61140)||AlN||||
|Kriechstrecke
Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink
Kontakt-Kontakt/terminaltoterminal||56,0
56,0
|||mm|
|Luftstrecke
Clearance|Kontakt-Kühlkörper/terminaltoheatsink
Kontakt-Kontakt/terminaltoterminal||26,0
26,0
|||mm|
|VergleichszahlderKriechwegbildung
Comperativetrackingindex||CTI||> 600|||
||||min.|typ.|max.||
|Modulstreuinduktivität
Strayinductancemodule||LsCE||18||nH|
|Modulleitungswiderstand,Anschlüsse-
Chip
Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'
RAA'+CC'||0,12
0,12||mΩ|
|Lagertemperatur
Storagetemperature||Tstg|-55||125|°C|
|Anzugsdrehmomentf.Modulmontage
Mountingtorqueformodulmounting|SchraubeM6-Montagegem.gültigerApplikationsschrift
ScrewM6-Mountingaccordingtovalidapplicationnote|M|4,25||5,75|Nm|
|Anzugsdrehmomentf.elektr.Anschlüsse
Terminalconnectiontorque|SchraubeM4-Montagegem.gültigerApplikationsschrift
ScrewM4-Mountingaccordingtovalidapplicationnote
SchraubeM8-Montagegem.gültigerApplikationsschrift
ScrewM8-Mountingaccordingtovalidapplicationnote|M|1,8
8,0|-
-|2,1
10|Nm
Nm|
|Gewicht
Weight||G||1400||g|
V�3.2 2018-01-15
Datasheet
4
FZ750R65KE3
**==> picture [86 x 38] intentionally omitted <==**
**Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V
**Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�125°C
**==> picture [484 x 282] intentionally omitted <==**
**----- Start of picture text -----**
1500 1500
Tvj = 25°C VGE = 20 V
Tvj = 125°C VGE = 15 V
VGE = 12 V
VGE = 10 V
1250 1250
1000 1000
750 750
500 500
250 250
0 0
0,0 1,0 2,0 3,0 4,0 5,0 6,0 0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 9,0
VCE [V] VCE [V]
[A] [A]
IC IC
**----- End of picture text -----**
**Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V
## **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC)
VGE�=�±15�V,�RGon�=�1� Ω ,�RGoff�=�6.8� Ω ,�VCE�=�3600�V
**==> picture [487 x 282] intentionally omitted <==**
**----- Start of picture text -----**
1500 18000
Tvj = 25°C Eon, Tvj = 125°C
Tvj = 125°C Eoff, Tvj = 125°C
16000
1250
14000
1000 12000
10000
750
8000
500 6000
4000
250
2000
0 0
6 7 8 9 10 11 12 13 0 250 500 750 1000 1250 1500
VGE [V] IC [A]
[A]
IC E [mJ]
**----- End of picture text -----**
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FZ750R65KE3
**==> picture [487 x 656] intentionally omitted <==**
**----- Start of picture text -----**
Eon =f(R),E G off =f(R G) ZthJC =f (t)
VGE =+15V,1 C =750A,V CE =3600V
14000 10 pot TETT EE TT
Eon, Tvj = 125°C ZthJC : IGBT
Eoff, Tvj = 125°C
12000
10000
8000
1
6000
4000
2000 i: 1 2 3 4
ri[K/kW]: 0,44 5,62 1,67 0,96
τ i[s]: 0,004 0,044 0,405 3,93
0 0,1
0 1 2 3 4 5 6 7 8 9 10 11 12 0,001 0,01 0,1 1 10 100
RG [ Ω ] t [s]
Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)
(RBSOA) forward characteristic of Diode, Inverter (typical)
reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)
IC =f(V CE)
VGE =415V,R Goff =68 Ω ,T vj =125°C
1750 1500
Tvj = 125°C Tvj = 25°C
Tvj = 25°C Tvj = 125°C
Tvj = -40°C
1500
1250
1250
1000
1000
750 r)
/
750 /
/
500
/
500
/
/
/
250 7
250 /
7
7
~
0 0
2000 3000 4000 5000 6000 7000 0,0 1,0 2,0 3,0 4,0 5,0
VCE [V] VF [V]
[K/kW]
E [mJ]
thJC
Z
[A] [A]
IC IF
**----- End of picture text -----**
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**==> picture [489 x 656] intentionally omitted <==**
**----- Start of picture text -----**
Erec =f (I F) Erec =f(R G)
RGon =1 Ω ,V CE =3600V IF =750A,V CE =3600V
4400 3300
Erec, Tvj = 125°C Erec, Tvj = 125°C
4000 3000
3600 2700
3200 2400
2800 2100
2400 1800
2000 1500
1600 1200
1200 900
800 600
400 300
0 0
0 250 500 750 1000 1250 1500 0,0 0,5 1,0 1,5 2,0 2,5 3,0
IF [A] RG [ Ω ]
Transienter Warmewiderstand Diode, Wechselrichter Sicherer Arbeitsbereich Diode, Wechselrichter (SOA)
transient thermal impedance Diode, Inverter safe operation area Diode, Inverter (SOA)
ZthJC =f (t) IR =f(V R)
Tvj = 125°C
100 Aee 1750
ZthJC : Diode IR, Modul
H—pLASE
1500
1250
10
finan
Seti cette messi emia 1000
750
1
500
i: 1 2 3 4 250
ri[K/kW]: 2,69 11,49 2,82 1,61
τ i[s]: 0,005 0,048 0,313 3,348
0,1 0
0,001 0,01 0,1 1 10 100 0 1000 2000 3000 4000 5000 6000 7000
t [s] VR [V]
E [mJ] E [mJ]
[K/kW]thJC [A]IR
Z
**----- End of picture text -----**
Datasheet
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FZ750R65KE3
**==> picture [86 x 38] intentionally omitted <==**
## **Schaltplan�/�Circuit�diagram**
**==> picture [168 x 153] intentionally omitted <==**
## **Gehäuseabmessungen�/�Package�outlines**
**==> picture [249 x 186] intentionally omitted <==**
8
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Datasheet
## **Trademarks**
## **WARNHINWEIS**
## **WARNINGS**
## Links
- [View this product on Novapart](https://novapart.co/products/FZ750R65KE3NOSA1/igbt-module-single-switch-750-a-3-v-125-c)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/fz750r65ke3nosa1/igbt-module-n-channel-6-5kv-750a/dp/3514421)
---
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