# IGBT Module, Single Switch, 840 A, 1.95 V, 3.35 kW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2726205/)

**URL**: https://novapart.co/products/FZ600R17KE4HOSA1/igbt-module-single-switch-840-a-195-v-335-kw-150-c
**SKU**: FZ600R17KE4HOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €110.9200
**Stock**: 10+
**Lead Time**: 92 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:840A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:3.35kW; Collector Emitter Voltage V(br)ceo:1.7k

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | 62mm C Series |
| Igbt Technology | IGBT4 - E4 |
| Igbt Termination | Screw |
| Power Dissipation | 3.35kW |
| Igbt Configuration | Single Switch |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 840A |
| Power Dissipation Pd | 3.35kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 840A |
| Collector Emitter Voltage Max | 1.7kV |
| Collector Emitter Voltage V(Br)Ceo | 1.7kV |
| Collector Emitter Saturation Voltage | 1.95V |
| Collector Emitter Saturation Voltage Vce(On) | 1.95V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726205/)

IGBT-模块 IGBT-modules 

## FZ600R17KE4 

VCES = 1700V IC nom = 600A / ICRM = 1200A 

## **典型应用** 

- 大功率变流器 

- • 电机传动 • UPS系统 

- 风力发电机 

- 

- 

- 

- 

## **电气特性** 

- 

- CEsat 

- 无与伦比的坚固性 

- VCEsat 

- 

- CEsat 

- 

- VCEsat 

## **机械特性** 

- 

- 

- 高爬电距离和电气间隙 

- • 绝缘的基板 

- 标封装 

- 

- 

- 

- 

- 

1 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FZ600R17KE4 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FZ600R17KE4<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:MK<br>approvedby:WR<br>dateofpublication:2013-11-05<br>revision:2.2<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1700<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>600<br>840<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>1200<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>3350<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 600 A, VGE= 15 V<br>IC= 600 A, VGE= 15 V<br>IC= 600 A, VGE= 15 V<br>VCE sat<br>1,95<br>2,35<br>2,45<br>2,30<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 24,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>6,10<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>1,3<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>49,0<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>1,60<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1700 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 600 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 1,2Ω<br>td on<br>0,24<br>0,28<br>0,30<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 600 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 1,2Ω<br>tr<br>0,05<br>0,055<br>0,055<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 600 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 1,2Ω<br>td off<br>0,70<br>0,74<br>0,78<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 600 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 1,2Ω<br>tf<br>0,08<br>0,13<br>0,15<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 600 A, VCE= 900 V, LS= 60 nH<br>VGE= ±15 V, di/dt = 6200 A/µs (Tvj= 150°C)<br>RGon= 1,2Ω<br>Eon<br>85,0<br>120<br>135<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 600 A, VCE= 900 V, LS= 60 nH<br>VGE= ±15 V, du/dt = 3600 V/µs (Tvj= 150°C)<br>RGoff= 1,2Ω<br>Eoff<br>110<br>180<br>200<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 1000 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>2700<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,045 K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,017<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

## 技术信息�/�Technical�Information IGBT-模块IGBT-modules FZ600R17KE4 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|1700|1700|V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|600|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|800|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|56500<br>55000<br>|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 600 A, VGE= 0 V<br>IF= 600 A, VGE= 0 V<br>IF= 600 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,80<br>1,90<br>1,95|2,20|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 600 A, - diF/dt = 6200 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||620<br>780<br>830||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 600 A, - diF/dt = 6200 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||115<br>210<br>240||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 600 A, - diF/dt = 6200 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||72,0<br>140<br>165||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,065|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,025||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



date�of�publication:�2013-11-05 revision:�2.2 

prepared�by:�MK approved�by:�WR 

3 

IGBT-模块 IGBT-modules 

## FZ600R17KE4 

## **初步数据** 

|#R_<br>| Module||||||
|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~<br> ~~ee ~~<br>BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||4,0<br>Cu<br>Al2O3|kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||25,0<br>19,0|mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|25,0<br>10,0<br>> 400<br>typ.<br>max.<br>~~ee~~|mm|
|外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||0,01|K/W|
|杂散电感,模块||LsCE||16|nH|
|模块引线电阻,端子-芯片<br>储存温度<br>模块安装的安装扭距<br>terminals ~~- chip~~<br>~~Storage temperature~~<br>Mounting torque for modul mounting|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>~~ee ~~<br>HeeM6ARSEAR VAY AyAEAET<br>Screw M6<br>- Mounting according to valid application note|RCC'+EE'<br>0,50<br>Tstg<br>-40<br>125<br>M<br>3,00<br>-<br>6,00<br>~~tt ff~~<br> ~~ee ee~~|||mΩ<br>°C<br>Nm|
|端子联接扭距<br>Terminal connection torque|BeeM4AHEAD AVAY OV EAETR<br>Screw M4<br>- Mounting<br>according to valid application note<br>theeM6MIB<br>SAT ee<br>Screw M6<br>- Mounting according to valid application note|M|1,1<br>2,5|-<br>-<br>2,0<br>5,0|Nm<br>Nm|
|重量<br>Weight||G||340|g|



4 

## IGBT-模块 IGBT-modules 

## FZ600R17KE4 

## **初步数据** 

**==> picture [489 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE Cs V Tvj = {50°C<br>1200 1200<br>Tvj = 25°C VGE = 20V<br>1100 | Tvj = 125°C see 1100 Mm VGE = 15V L il iit |<br>Tvj = 150°C VGE = 12V<br>1000 poe f / 1000 IE VGE = 10V Peo / /<br>VGE = 9V<br>900 Ff | | | og/ ALaoe 900 VGE = 8V PLAR/<br>800 Pot A 800 P TT| Ve eyee |<br>700 700<br>600 600<br>500400 P| | ls | | | 500400 | | |Aer<br>300 P| | oe | | 300 P| |leerft ft |<br>200 P| 200 TT<br>1000 |P|fie|TAT|ee|| | | | | | | 1000 e | eAayiaae Ze| |tt|<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>ME IGBT, HAS (BB) FFRIAE IGBT, HBA ( BB)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =fil C)<br>VCE OV VGE Oo R Gon Ue Ω ,R Goff =1.2 Ω ,V CE =900V<br>1200 Ld 7, 350 |<br>Tvj = 25°C Eon, Tvj = 125°C<br>1100 Tvj = 125°C Eon, Tvj = 150°C<br>Tvj = 150°C 300 Eoff, Tvj = 125°C<br>1000 Eoff, Tvj = 150°C<br>| rare<br>900<br>250<br>E e | sare<br>800<br>700600 HTSleerFeE]P| | | if | | 200 | lo LeOyeee<br>500400 P|P| | | FI] | | 150 7 CA NL<br>100<br>300 P| || |lf)fF | | | ] eea | |<br>se<br>200<br>50<br>100 P| rf |<br>0 PerayYY)| | | | | 0 ary yy yy<br>5 6 7 8 9 10 11 12 13 0 150 300 450 600 750 900 1050 1200<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


5 

IGBT-模块 IGBT-modules 

## FZ600R17KE4 

## **初步数据** 

**==> picture [486 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
Eon =f{(R),E G off =f(R G) ZthJC =f (t)<br>VGE =+15V,| C =600A,V CE =900V<br>600 LS 0,1 ee<br>Eon, Tvj = 125°C : | ZthJC : IGBT PT TTT TTT TTT<br>550 Eon, Tvj = 150°C<br>Eoff, Tvj = 125°C 7? a ( t t Toom<br>500 Eoff, Tvj = 150°C<br>nl Titi | tii fT T t<br>450 | SnaEEean e mes emer<br>400 ee PLE VIL ETE TE<br>pt | [tt] tt aaa PUCe r<br>pee<br>350 PPL LT<br>a CTT<br>300 PL 0,01 Ll<br>250 TT eatereS| OT EEYT TATHvi OT E TT TTHETT TET<br>200 P|=Ur TL= ee PArTA[AT TTT oT TT oT oT Tn<br>150 ms I ETT<br>100<br>i:    1    2    3    4<br>ri[K/W]:   0,0028   0,0107   0,0283   0,0032<br>50 P e τ i[s]:    0,0008   0,013    0,05    0,6<br>0 PPT TT EE 0,001 LA bp ol l<br>0 1 2 3 4 5 6 7 8 9 10 11 12 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>RieZS LEK IGBT, ees ( RBSOA ) Fa mESst REGS ( BB)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC CE) IF F)<br>VGE “i sV.R Goff =1.2 Ω ,T vj =150°C a<br>1400 1200<br>IC, Modul Tvj = 25°C<br>IC, Chip 1100 Tvj = 125°C<br>1200 a Tvj = 150°C<br>1000<br>900<br>1000<br>800<br>800 TO) 700 Feeaee<br>600<br>600 500<br>400<br>400<br>300<br>SOC 200 EERE<br>200<br>100<br>ee ee<br>0 0<br>0 400 800 1200 1600 2000 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

IGBT-模块 IGBT-modules 

## FZ600R17KE4 

## **初步数据** 

**==> picture [485 x 279] intentionally omitted <==**

**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon _p Ω ,V CE =900V IF - 600A. V CE = 900 V<br>220 200<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>200 [amepo Erec, Tvj = 150°C 180 FeJi Erec, Tvj = 150°C<br>180<br>160<br>160 Pt de e<br>ere P N T<br>140<br>140<br>pee NCE<br>120<br>120 P| eT | ae<br>100<br>100 Pt TAwa PCPSBSE<br>a 80 PT<br>80 Pie | NEEL]<br>| 60 HPP PPRRs<br>60<br>PA eee<br>40 40 ee<br>20 20<br>0 0<br>0 150 300 450 600 750 900 1050 1200 0 1 2 3 4 5 6 7 8 9 10 11 12<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


**==> picture [238 x 280] intentionally omitted <==**

**----- Start of picture text -----**<br>
ZthJC =f (t)<br>0,1<br>HE et<br>ZthJC : Diode<br>HS eo<br>Coo ee SS ee e<br>PTT oe<br>fT ET<br>TINTCI<br>ee<br>0,01<br>0a<br>( *F ITT IT TT oT hPa TTT TTT<br>7) TTTTT<br>7<br>aena eaa lll|<br>a ee || |<br>i:    1    2    3    4<br>ri[K/W]:   0,0041   0,0155   0,0409   0,0046<br>τ i[s]:    0,0008   0,013    0,05    0,6<br>||<br>0,001<br>0,001 0,01 0,1 1 10<br>t [s]<br> [K/W]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


7 

## 技术信息�/�Technical�Information 

> IGBT-模块IGBT-modules FZ600R17KE4 

**==> picture [86 x 38] intentionally omitted <==**

**==> picture [96 x 25] intentionally omitted <==**

**----- Start of picture text -----**<br>
初步数据<br>Preliminary�Data<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
接线图�/�circuit_diagram_headline<br>封装尺寸�/�package�outlines<br>In fin e o n<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
prepared�by:�MK date�of�publication:�2013-11-05<br>approved�by:�WR revision:�2.2<br>**----- End of picture text -----**<br>


8 

IGBT-模块 IGBT-modules 

## FZ600R17KE4 

## **初步数据** 

## **使用条件和条款** 

## 使用条件和条款 

产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 

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9 



## Links

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