# IGBT Module, Single Switch, 620 A, 2 V, 2.25 kW, 125 °C, Module

![Product image](https://novapart.co/image/farnell:2726200/)

**URL**: https://novapart.co/products/FZ400R17KE3HOSA1/igbt-module-single-switch-620-a-2-v-225-kw-125-c
**SKU**: FZ400R17KE3HOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €114.0000
**Stock**: 200+
**Lead Time**: 92 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:620A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:2.25kW; Collector Emitter Voltage V(br)ceo:1.7kV; Tran

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | Standard 62mm C |
| Igbt Technology | IGBT 3 [Trench/Field Stop] |
| Igbt Termination | Tab |
| Power Dissipation | 2.25kW |
| Igbt Configuration | Single Switch |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 620A |
| Power Dissipation Pd | 2.25kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 125°C |
| Junction Temperature Tj Max | 125°C |
| Continuous Collector Current | 620A |
| Collector Emitter Voltage Max | 1.7kV |
| Collector Emitter Voltage V(Br)Ceo | 1.7kV |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Saturation Voltage Vce(On) | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726200/)

## 技术信息�/�Technical�Information 

> IGBT-模块IGBT-modules FZ400R17KE3 

**==> picture [86 x 38] intentionally omitted <==**

62mm�C-Serien�Modul�mit�Trench/Feldstop�IGBT³�und�Emitter�Controlled³�Diode� 62mm�C-series�module�with�trench/fieldstop�IGBT³�and�Emitter�Controlled³�diode� 

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

**初步数据 Preliminary�Data** 

|技术信息/TechnicalInformation<br>FZ400R17KE3<br>IGBT-模块<br>IGBT-modules||
|---|---|
|62mmC-SerienModulmitTrench/FeldstopIGBT³undEmitterControlled³Diode<br>62mmC-seriesmodulewithtrench/fieldstopIGBT³andEmitterControlled³diode<br>preparedby:HS<br>approvedby:WR<br>dateofpublication:2013-10-03<br>revision:2.2<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1700<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj max= 150°C<br>TC= 25°C, Tvj max= 150°C<br>IC nom<br>IC<br>400<br>620<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>800<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 150<br>Ptot<br>2250<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 400 A, VGE= 15 V<br>IC= 400 A, VGE= 15 V<br>VCE sat<br>2,00<br>2,40<br>2,45<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 16,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>4,60<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>1,9<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>36,0<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>1,20<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1700 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>3,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 400 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 3,6Ω<br>td on<br>0,28<br>0,30<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 400 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 3,6Ω<br>tr<br>0,08<br>0,10<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 400 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 3,6Ω<br>td off<br>0,80<br>1,00<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 400 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 3,6Ω<br>tf<br>0,12<br>0,20<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 400 A, VCE= 900 V, LS= 60 nH<br>VGE= ±15 V<br>RGon= 3,6Ω<br>Eon<br>105<br>135<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 400 A, VCE= 900 V, LS= 60 nH<br>VGE= ±15 V<br>RGoff= 3,6Ω<br>Eoff<br>85,0<br>125<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 1000 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>1600<br>A<br>Tvj= 125°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,055 K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,017<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>125<br>°C||



1 

## 技术信息�/�Technical�Information IGBT-模块IGBT-modules FZ400R17KE3 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|1700|1700|V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|400|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|800|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|25500<br>|||A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 400 A, VGE= 0 V<br>IF= 400 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C|VF||1,80<br>1,90|2,20|V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 400 A, - diF/dt = 4250 A/µs (Tvj=125°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|IRM||440<br>480||A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 400 A, - diF/dt = 4250 A/µs (Tvj=125°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Qr||100<br>170||µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 400 A, - diF/dt = 4250 A/µs (Tvj=125°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Erec||54,0<br>96,0||mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,08|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,025||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||125|°C|



prepared�by:�HS approved�by:�WR 

date�of�publication:�2013-10-03 revision:�2.2 

2 

IGBT-模块 IGBT-modules 

## FZ400R17KE3 

## **初步数据** 

|#R_<br>| Module||||||
|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~<br> ~~ee ~~<br>BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||3,4<br>Cu<br>Al2O3|kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||25,0<br>19,0|mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|25,0<br>10,0<br>> 400<br>typ.<br>max.<br>~~ee~~|mm|
|外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||0,01|K/W|
|杂散电感,模块||LsCE||16|nH|
|模块引线电阻,端子-芯片<br>储存温度<br>模块安装的安装扭距<br>terminals ~~- chip~~<br>~~Storage temperature~~<br>Mounting torque for modul mounting|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>~~ee ~~<br>HeeM6ARSEAR VAY AyAEAET<br>Screw M6<br>- Mounting according to valid application note|RCC'+EE'<br>0,50<br>Tstg<br>-40<br>125<br>M<br>3,00<br>-<br>6,00<br>~~tt ff~~<br> ~~ee ee~~|||mΩ<br>°C<br>Nm|
|端子联接扭距<br>Terminal connection torque|BeeM4AHEAD AVAY OV EAETR<br>Screw M4<br>- Mounting<br>according to valid application note<br>theeM6MIB<br>SAT ee<br>Screw M6<br>- Mounting according to valid application note|M|1,1<br>2,5|-<br>-<br>2,0<br>5,0|Nm<br>Nm|
|重量<br>Weight||G||340|g|



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IGBT-模块 IGBT-modules 

## FZ400R17KE3 

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IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 125°C<br>800 800<br>Tvj = 25°C VGE = 20V<br>Tvj = 125°C VGE = 15V<br>700 700 VGE = 12V<br>VGE = 10V<br>VGE = 9V<br>600 E e iA 600 Ee VGE =8 V pp<br>500 pP 500<br>fs  ) T  fa [e]<br>400 400<br>300 300<br>7<br>200 200<br>fo7 /, / V4<br>/ Le<br>100 100<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>feaistt IGBT, Ses (BB) FFHIRE IGBT, HSS ( FAB)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =36 Ω ,R Goff =36 Ω ,V CE =900V<br>800 400<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eoff, Tvj = 125°C<br>700 350<br>EJ vy) Ee<br>600 300<br>500 250<br>epee<br>400 200<br>et PP<br>300 PK 150 ee<br>200 100<br>COE ean<br>100 50<br>0 0<br>5 6 7 8 9 10 11 12 13 0 100 200 300 400 500 600 700 800<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


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IGBT-模块 IGBT-modules 

## FZ400R17KE3 

## **初步数据** 

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Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1| C =400A,V CE =900V<br>800 | 0,1 PtTTT<br>Eon, Tvj = 125°C | ZthJC : IGBT PT TTT TTT TTT<br>Eoff, Tvj = 125°C<br>700600 FE) Pf a ff) | | LP7 oooHt PTCeTE TTTCee  c etrn io etTh<br>Wa eS aan<br>500 AePT eLTIVAIENT A<br>400 0,01<br>300200 amawPTY}7A)| yl| to | (oT22PaaCCI TTT|UT TT CTTTT TT TTT]<br>ATI FF<br>ATP] a | i:    1    2    3    | 4<br>100 ri[K/W]:   0,0055   0,0165   0,022   0,011<br>τ i[s]:    0,01    0,04    0,06    0,3<br>0 0,001<br>0 5 10 15 20 25 30 35 40 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Riw@RS IK IGBT, #228 ( RBSOA ) TEMES AE ewe ( ga)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC CE) IF F)<br>VGE “i sV.R Goff =3.6 Ω ,T vj =125°C a<br>1000 800<br>IC, Modul Tvj = 25°C<br>900 IC, Chip Tvj = 125°C<br>a 700 |<br>800<br>600<br>700<br>PEPE rrr 500 EE<br>600<br>fe<br>500 400<br>400<br>300<br>300<br>200<br>200 PL ey ptt tt<br>100<br>100<br>0 0<br>0 200 400 600 800 1000 1200 1400 1600 1800 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


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IGBT-模块<br>IGBT-modules<br>**----- End of picture text -----**<br>


## FZ400R17KE3 

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初步数据<br>**----- End of picture text -----**<br>


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Erec =f (I F) Erec =f(R G)<br>RGon ay Ω ,V CE =900V IF = 400A, V CE = 900 V<br>200 100<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>180 a Ss |<br>ee ee 90  eee<br>160<br>SA Pe e<br>80<br>140<br>70<br>120<br>100 HELE EEE 60 PIN EE<br>80<br>Pt teeAT!ELF 50 |INEN<br>vA ~ NX<br>60 plete<br>te ty 40 Pp<br>40 Prt PN”<br>| | | TS<br>30<br>20<br>0 20<br>0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 35 40<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


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ZthJC =f (t)<br>1<br>ZthJC : Diode<br>or o<br>PTa E aTTee TTT]<br>0,1<br>PF HH | ++ 4H<br>E E<br>rT TTe T<br>Aa Aee ee ell<br>HHA HATH<br>0,01 CA<br>IN CTL UT<br>seeeeee ee eeeee eeee<br>a<br>Pr I7 T TTee ee elTT]<br>C CP<br>i:    1    2    3    4<br>AR pen ri[K/W]:   0,008    oir 0,024   0,032    co 0,016<br>τ i[s]:    0,01    0,04    0,06    0,3<br>LUI |moomo ao Il<br>0,001<br>0,001 0,01 0,1 1 10<br>t [s]<br> [K/W]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


6 

## 技术信息�/�Technical�Information 

> IGBT-模块IGBT-modules FZ400R17KE3 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

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接线图�/�circuit_diagram_headline<br>封装尺寸�/�package�outlines<br>In fin e o n<br>**----- End of picture text -----**<br>


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prepared�by:�HS date�of�publication:�2013-10-03<br>approved�by:�WR revision:�2.2<br>**----- End of picture text -----**<br>


7 

IGBT-模块 IGBT-modules 

## FZ400R17KE3 

## **初步数据** 

## **使用条件和条款** 

## 使用条件和条款 

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## Links

- [View this product on Novapart](https://novapart.co/products/FZ400R17KE3HOSA1/igbt-module-single-switch-620-a-2-v-225-kw-125-c)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/fz400r17ke3hosa1/transistor-igbt-module-1-7kv-620a/dp/2726200)
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