# IGBT Module, Single Switch, 400 A, 1.75 V, 2.4 kW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2709953/)

**URL**: https://novapart.co/products/FZ400R12KE4HOSA1/igbt-module-single-switch-400-a-175-v-24-kw-150-c
**SKU**: FZ400R12KE4HOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €85.7400
**Stock**: 10+
**Lead Time**: 197 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:400A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:2.4kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transis

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | 62mm C |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Stud |
| Power Dissipation | 2.4kW |
| Igbt Configuration | Single Switch |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 400A |
| Power Dissipation Pd | 2.4kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 400A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Saturation Voltage Vce(On) | 1.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2709953/)

IGBT-模块 IGBT-modules 

## FZ400R12KE4 

VCES = 1200V IC nom = 400A / ICRM = 800A 

## **典型应用** 

- 大功率变流器 

- • 电机传动 • UPS系统 • 风力发电机 

- 

- 

- 

- 

## **电气特性** 

- 

- 低开关损耗 

- • 无与伦比的坚固性 

- VCEsat 7 

- • (i V CEsat 

- 

- 

- 

- VCEsat 

- CEsat 

## **机械特性** 

- 

- 

- 高爬电距离和电气间隙 

- • 绝缘的基板 • 标封装 

- 

- 

- 

- 

- 

1 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FZ400R12KE4 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FZ400R12KE4<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:MK<br>approvedby:WR<br>dateofpublication:2013-11-04<br>revision:2.2<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>400<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>800<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>2400<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 400 A, VGE= 15 V<br>IC= 400 A, VGE= 15 V<br>IC= 400 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,00<br>2,05<br>2,10<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 15,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>3,70<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>1,9<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>28,0<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>1,10<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 400 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,8Ω<br>td on<br>0,24<br>0,25<br>0,26<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 400 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,8Ω<br>tr<br>0,09<br>0,10<br>0,11<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 400 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,8Ω<br>td off<br>0,61<br>0,64<br>0,66<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 400 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,8Ω<br>tf<br>0,10<br>0,14<br>0,15<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 400 A, VCE= 600 V, LS= 60 nH<br>VGE= ±15 V, di/dt = 5000 A/µs (Tvj= 150°C)<br>RGon= 1,8Ω<br>Eon<br>22,0<br>33,0<br>36,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 400 A, VCE= 600 V, LS= 60 nH<br>VGE= ±15 V, du/dt = 3500 V/µs (Tvj= 150°C)<br>RGoff= 1,8Ω<br>Eoff<br>33,0<br>50,0<br>55,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>1600<br>A<br>Tvj= 125°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,062 K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,016<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

## 技术信息�/�Technical�Information IGBT-模块IGBT-modules FZ400R12KE4 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200|1200|V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|400|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|800|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|31000<br>29000<br>|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 400 A, VGE= 0 V<br>IF= 400 A, VGE= 0 V<br>IF= 400 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,65<br>1,65<br>1,65|2,15|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 400 A, - diF/dt = 5000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||300<br>400<br>420||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 400 A, - diF/dt = 5000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||40,0<br>70,0<br>80,0||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 400 A, - diF/dt = 5000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||20,0<br>38,5<br>44,0||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,11|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,028||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



date�of�publication:�2013-11-04 revision:�2.2 

prepared�by:�MK approved�by:�WR 

3 

IGBT-模块 IGBT-modules 

## FZ400R12KE4 

## **初步数据** 

|#R_<br>| Module||||||
|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~<br> ~~ee ~~<br>BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||4,0<br>Cu<br>Al2O3|kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||25,0<br>19,0|mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|25,0<br>10,0<br>> 400<br>typ.<br>max.<br>~~ee~~|mm|
|外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||0,01|K/W|
|杂散电感,模块||LsCE||16|nH|
|模块引线电阻,端子-芯片<br>储存温度<br>模块安装的安装扭距<br>terminals ~~- chip~~<br>~~Storage temperature~~<br>Mounting torque for modul mounting|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>~~ee ~~<br>HeeM6ARSEAR VAY AyAEAET<br>Screw M6<br>- Mounting according to valid application note|RCC'+EE'<br>0,50<br>Tstg<br>-40<br>125<br>M<br>3,00<br>-<br>6,00<br>~~tt ff~~<br> ~~ee ee~~|||mΩ<br>°C<br>Nm|
|端子联接扭距<br>Terminal connection torque|BeeM4AHEAD AVAY OV EAETR<br>Screw M4<br>- Mounting<br>according to valid application note<br>theeM6MIB<br>SAT ee<br>Screw M6<br>- Mounting according to valid application note|M|1,1<br>2,5|-<br>-<br>2,0<br>5,0|Nm<br>Nm|
|重量<br>Weight||G||340|g|



4 

IGBT-模块 IGBT-modules 

## FZ400R12KE4 

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初步数据<br>**----- End of picture text -----**<br>


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I output C  characteristic CE) IGBT,Inverter (typical) I output C characteristic CE) IGBT,Inverter (typical)<br>VGE “as Tvj =150°C<br>800 800<br>Tvj = 25°C VGE = 19V<br>Tvj = 125°C VGE = 17V<br>700 E Tvj = 150°C L?) 700 P VGE = 15V UP<br>VGE = 13V<br>VGE = 11V<br>600 PT y e 600 VGE = 9V<br>| IE re<br>500 Bes 500<br>: eee eee) ae<br>Pi  a [' # a <<<br>400 400<br>Ag Ly<br>/<br>[Zee]<br>300 300<br>ee) [See,] ee<br>By 2 eeeeee<br>200 200<br>PAL ge<br>100 100<br>pit L<br>0 0<br>J) | || U CLA<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>eStE IGBT, EBS (FAB) FFI IGBT, WBE ( HAA)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC GE) Eon C off C)<br>VCE eo VGE ~eVR Gon S18 Ω ,R Goff =18 Ω ,V CE =600V<br>800 120<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C 110 Eoff, Tvj = 125°C<br>700 E Tvj = 150°C OF] Fa Eon, Tvj = 150°C o<br>100 Eoff, Tvj = 150°C<br>T T<br>600 90<br>|) R e e [se]<br>80<br>500 Pf | | |ff)<br>70<br>S000I: 400yfeeeer p eaes<br>400 60<br>50<br>PP A) pe e<br>300<br>40<br>Sane 4008 eee eee<br>200 30<br>/ eae eee<br>20<br>COOP) Ge<br>100<br>0 eo rt TTT 100 PPA<br>5 6 7 8 9 10 11 12 13 0 100 200 300 400 500 600 700 800<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


5 

IGBT-模块 IGBT-modules 

## FZ400R12KE4 

## **初步数据** 

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Eon ={(R),E G off =f(R G) ZthJC =f (t)<br>VGE =4+15V,1 C =400A,V CE =600V<br>330 0,1<br>Eon, Tvj = 125°C ZthJC : IGBT<br>300 =——— Eoff, Tvj = 125°C TH } ty sTel<br>Eon, Tvj = 150°C<br>270 f = Eoff, Tvj = 150°C [ope A a|<br>240 PE TE| ee aETea | n ||<br>210 a ee<br>180<br>a |||<br>0,01<br>150 Pt tt Lam | tt Te ee<br>TT Tar] [ESE<br>120<br>| L Fn oo<br>90<br>60 PT |YTwt| ff| | ff PATIHA| EEE EIT<br>i:    1    2    3    4<br>30 pata 7A) r τ ii[K/W]:   [s]:    EC 0,00372   0,01    0,02046   0,02    0,01984   0,05    O 0,01798   0,1<br>ee a<br>0 0,001<br>0 2 4 6 8 10 12 14 16 18 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Rin LEK IGBT, 2 ( RBSOA ) TE EASE iS ses ( $B)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC CE) IF F)<br>VGE SVR Goff =1.8 Ω ,T vj = 150°C a<br>900 800<br>IC, Modul Tvj = 25°C<br>800 a IC, Chip a Tvj = 125°C le<br>700 Tvj = 150°C<br>700<br>600<br>600<br>500<br>500<br>400<br>400<br>. LEELA<br>300<br>300<br>200<br>200<br>ne 100 ptf ugh ty.<br>100<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

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IGBT-模块<br>IGBT-modules<br>**----- End of picture text -----**<br>


## FZ400R12KE4 

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Erec =fi(l F) Erec =f(R G)<br>RGon J's Ω ,V CE =600V IF = 400A, V CE = 600 V<br>60 50<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C 45 Erec, Tvj = 150°C<br>50 EO }} f [te =e Je<br>= ee 40 ee<br>35<br>Leeree S C E<br>40<br>30<br>30 aAKYYYa 25 P PINSINS| PE| Ey<br>/ 20 Py Nee<br>SL Nosh<br>20<br>15 Pt<br>10<br>AC TT) eeeyp)eRe<br>10<br>5<br>0 0<br>0 100 200 300 400 500 600 700 800 0 2 4 6 8 10 12 14 16 18<br>IF [A] RG [ Ω ]<br>ASA — RS PES<br>transient thermal impedance Diode, Inverter<br>ZthJC =f (t)<br>1<br>ZthJC : Diode<br>Ra  ee<br>i<br>a e a n e en el<br>0,1 L E<br>aie eee ZAee<br>a<br>ST a<br>0,01 UAE<br>2EUTNee LT<br>PEE(7 Titi EETT TTTTTEE EAH<br>7<br>rT [ Se]<br>i:    1    2    3    4<br>ri[K/W]:   0,0072   0,0396   0,0384   0,0348<br>PT τ i[s]:    0,01    0,02    T 0,05    0,1    f<br>TM mom o<br>0,001<br>0,001 0,01 0,1 1 10<br>t [s]<br>E [mJ] E [mJ]<br> [K/W]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


7 

## 技术信息�/�Technical�Information 

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IGBT-模块IGBT-modules FZ400R12KE4<br>**----- End of picture text -----**<br>


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8 

IGBT-模块 IGBT-modules 

## FZ400R12KE4 

## **初步数据** 

## **使用条件和条款** 

## 使用条件和条款 

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9 



## Links

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- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/fz400r12ke4hosa1/igbt-module-n-ch-1-2kv-400a/dp/2709953)
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