# IGBT Module, Single Switch, 1.5 kA, 2.55 V, 17 kW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2726195/)

**URL**: https://novapart.co/products/FZ1500R33HE3BPSA1/igbt-module-single-switch-15-ka-255-v-17-kw-150-c
**SKU**: FZ1500R33HE3BPSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €1387.6500
**Stock**: 10+
**Lead Time**: 148 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:1.5kA; Collector Emitter Saturation Voltage Vce(on):2.55V; Power Dissipation Pd:17kW; Collector Emitter Voltage V(br)ceo:3.3kV; T

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | IHM B |
| Igbt Technology | IGBT 3 [Trench/Field Stop] |
| Igbt Termination | Tab |
| Power Dissipation | 17kW |
| Igbt Configuration | Single Switch |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 1.5kA |
| Power Dissipation Pd | 17kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 1.5kA |
| Collector Emitter Voltage Max | 3.3kV |
| Collector Emitter Voltage V(Br)Ceo | 3.3kV |
| Collector Emitter Saturation Voltage | 2.55V |
| Collector Emitter Saturation Voltage Vce(On) | 2.55V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726195/)

> IGBT-ModuleIGBT-modules FZ1500R33HE3 

VCES = 3300V IC nom = 1500A / ICRM = 3000A 

- Chopper-Anwendungen 

- Mittelspannungsantriebe 

- Motorantriebe 

- Traktionsumrichter 

- USV-Systeme 

- Windgeneratoren 

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- Hohe Kurzschlussrobustheit, selbstlimitierender Kurzschlussstrom 

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- CEsat 

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- T 

- VCEsat 

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   - High Short Circuit Capability, Self Limiting Short 

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   - CEsat 

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   - T 

   - VCEsat 

- AlSiC Bodenplatte für erhöhte thermische Lastwechselfestigkeit 

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- AlSiC Base Plate for increased Thermal Cycling Capability 

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1 

> IGBT-ModuleIGBT-modules FZ1500R33HE3 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **IGBT,Wechselrichter�/�IGBT,Inverter** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FZ1500R33HE3<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:SB<br>approvedby:DTS<br>dateofpublication:2013-12-11<br>revision:3.1<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= -40°C<br>Tvj= 150°C<br>VCES<br>3300<br>3300<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 95°C, Tvj max= 150°C<br>IC nom<br>1500<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>3000<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 150°C<br>Ptot<br>17,0<br>kW<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 1500 A, VGE= 15 V<br>IC= 1500 A, VGE= 15 V<br>IC= 1500 A, VGE= 15 V<br>VCE sat<br>2,55<br>3,00<br>3,15<br>3,10<br>3,45<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 72,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V, VCE= 1800V<br>QG<br>42,0<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,42<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>280<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>6,00<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 3300 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 1500 A, VCE= 1800 V<br>VGE= ±15 V<br>RGon= 1,0Ω, CGE= 330 nF<br>td on<br>0,60<br>0,60<br>0,60<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 1500 A, VCE= 1800 V<br>VGE= ±15 V<br>RGon= 1,0Ω, CGE= 330 nF<br>tr<br>0,55<br>0,55<br>0,55<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 1500 A, VCE= 1800 V<br>VGE= ±15 V<br>RGoff= 1,5Ω, CGE= 330 nF<br>td off<br>3,00<br>3,20<br>3,20<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 1500 A, VCE= 1800 V<br>VGE= ±15 V<br>RGoff= 1,5Ω, CGE= 330 nF<br>tf<br>0,30<br>0,35<br>0,35<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 1500 A, VCE= 1800 V, LS= 85 nH<br>VGE= ±15 V, di/dt = 4500 A/µs (Tvj= 150°C)<br>RGon= 0,47Ω, CGE= 330 nF<br>Eon<br>1900<br>2550<br>2900<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 1500 A, VCE= 1800 V, LS= 85 nH<br>VGE= ±15 V, du/dt = 2100 V/µs (Tvj= 150°C)<br>RGoff= 1,5Ω, CGE= 330 nF<br>Eoff<br>1600<br>2100<br>2300<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 2500 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>6400<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>7,35 K/kW<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>10,0<br>K/kW<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

> IGBT-ModuleIGBT-modules FZ1500R33HE3 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= -40°C<br>Tvj= 150°C|VRRM|3300<br>3300|3300<br>3300||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|1500|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|3000|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|590<br>550|||kA²s<br>kA²s|
|Spitzenverlustleistung<br>Maximumpowerdissipation|Tvj= 125°C|PRQM|2400|||kW|
|Mindesteinschaltdauer<br>Minimumturn-ontime||ton min|10,0|||µs|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 1500 A, VGE= 0 V<br>IF= 1500 A, VGE= 0 V<br>IF= 1500 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||3,10<br>2,75<br>2,65|3,85<br>3,25|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 1500 A, - diF/dt = 4500 A/µs (Tvj=150°C)<br>VR= 1800 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||1500<br>1800<br>1850||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 1500 A, - diF/dt = 4500 A/µs (Tvj=150°C)<br>VR= 1800 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||650<br>1350<br>1600||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 1500 A, - diF/dt = 4500 A/µs (Tvj=150°C)<br>VR= 1800 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||650<br>1650<br>1950||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||13,0|K/kW|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||11,0||K/kW|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



prepared�by:�SB date�of�publication:�2013-12-11 approved�by:�DTS revision:�3.1 

3 

IGBT-Module IGBT-modules 

## FZ1500R33HE3 

|Modul / Module||||||||
|---|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Teilentladungs-Aussetzspannung<br>Kollektor-Emitter-Gleichsperrspannung<br>~~Isolation test voltage~~<br>~~Partial discharge extinction voltage ~~<br>~~DC stability~~|RMS, f = 50 Hz, t = 1 min.<br>RMS, f = 50 Hz, QPD ≤10 pC (acc. to IEC 1287)<br>Tvj= 25°C, 100 fit<br>~~ee ~~<br> ~~ee ~~<br>~~iY~~||VISOL<br>VISOL<br>VCE D<br> ~~ee~~<br> ~~ee~~||6,0<br>2,6<br>2100||kV<br>kV<br>V|
|Material Modulgrundplatte<br>Material of module baseplate|||||AlSiC|||
|Kriechstrecke<br>Creepage distance|Kontakt - Kuhlkorper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal||||32,2||mm|
|Luftstrecke<br>Clearance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal||||19,1||mm|
|Vergleichszahl der Kriechwegbildung<br>Comperative tracking index|||CTI||> 600|||
|Modulstreuinduktivität<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -|~~ee ~~||LsCE<br> ~~ee~~|min.|typ.<br>max.<br>6,0<br>~~ee~~||nH|
|Chip|TC<br>= 25°C, pro Schalter / per switch||RCC'+EE'||0,12||mΩ|
|Module lead resistance, terminals - chip||||||||
|Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M6<br>- Montage gem. gultiger Applikationsschrift<br>Screw M6<br>- Mounting according to valid application note||Tstg<br>M<br> ~~ee ee~~|-40<br>150<br>4,25<br>-<br>5,75<br>~~ee~~|||°C<br>Nm|
|Anzugsdrehmoment f. elektr. Anschlusse<br>Terminal connection torque||Schraube M4<br>- Montage gem. gultiger Applikationsschrift<br>Screw M4<br>- Mounting according to valid application note<br>Schraube M8<br>- Montage gem. giltiger Applikationsschrift<br>Screw M8<br>- Mounting according to valid application note||M|1,8<br>8,0|-<br>-|2,1<br>10|Nm<br>Nm|
|Gewicht<br>Weight|||G||1200||g|



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## IGBT-Module IGBT-modules Technische Information FZ1500R33HE3 / Technical Information 

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IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>3000 3000<br>Tvj = 25°C VGE = 20V<br>2700 Tvj = 125°C 2700 VGE = 15V<br>F Tvj = 150°C TL VGE = 12V<br>VGE = 10V<br>2400 eee ee 2400 | VGE = 9V Le Ae<br>VGE = 8V<br>P P | PET Adel<br>2100 2100<br>1800 1800<br>PtP tT a J a<br>[E] [E]<br>1500 1500<br>PPT TTARP [VEE)] | E eea<br>1200 1200 LE Ae<br>PP it iAaAi, ra [tt] / / “<br>900 900<br>ee eeeee<br>600 600<br>300 SES,PPAfa 300 LaWH Zee—<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =047 Ω ,R Goff =15 Ω ,V CE =1800V,C GE =330<br>nF<br>3000 10000<br>Tvj = 25°C Eon, Tvj = 150°C<br>2700 | Tvj = 125°C pot ee 9000 | Eon, Tvj = 125°C |p<br>Tvj = 150°C Eoff, Tvj = 150°C<br>Ee : Eoff, Tvj = 125°C<br>2400 8000<br>r e e EB f oo<br>2100 7000<br>pi | | et fe P E<br>e s<br>1800 6000<br>1500 5000<br>1200 4000<br>ee ee ee ee 2a<br>ee LIE<br>900 3000<br>ee eAn e eeeee<br>600 2000<br>pa Le<br>300 1000<br>0 0<br>5 6 7 8 9 10 11 12 13 0 500 1000 1500 2000 2500 3000<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


5 

IGBT-Module IGBT-modules 

## FZ1500R33HE3 

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Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =1500A,V CE =1800V,C GE =330nF<br>16000 100<br>Eon, Tvj = 150°C | ZthJC : IGBT ee<br>HH— ee<br>Eon, Tvj = 125°C<br>14000 EF]. Eoff, Tvj = 150°C Yr Z|V4_ | oooSS PT TT TE E TTT THH} tH<br>Eoff, Tvj = 125°C<br>RY ) Eicon<br>12000<br>10<br>10000<br>/a v SePT<br>a |<br>ae eee<br>8000<br>LA PT TTeT<br>6000<br>J | ee<br>1<br>PEE<br>ji 7trooELIE ELIE UT<br>4000 7, | 7{ Tt Tt TritT<br>/ oo eeeeeesc2t? ZY | Tit TT<br>i:    1    2    3    4<br>2000 ri[K/kW]:   1    3,869   1,46    1,002<br>ee eee lel a τ i[s]:    0,003   0,042   0,256   4,984<br>0 0,1<br>0 1 2 3 4 5 6 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT, Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =1.5 Ω ,T vj =150°C,C GE = 330 nF<br>3500 3000<br>IC, Modul Tvj = 150°C<br>IC, Chip Tvj = 125°C<br>3000 Tvj = 25°C<br>2500<br>2500<br>2000<br>2000<br>1500<br>1500<br>1000<br>1000<br>500<br>500<br>0 0<br>0 500 1000 1500 2000 2500 3000 3500 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5<br>VCE  [V] VF [V]<br> [K/kW]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

IGBT-Module IGBT-modules 

## FZ1500R33HE3 

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**----- Start of picture text -----**<br>
Erec =f (I F) Erec =f(R G)<br>RGon =0.47 Ω ,V CE =1800V IF =1500A,V CE =1800V<br>3000 a 3000 LS<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>2500 2500<br>2000 2000<br>1500 1500<br>ae Z7aen ELT TTT<br>1000 1000<br>yet} LRN EEE<br>500 500<br>0 0<br>0 500 1000 1500 2000 2500 3000 0 1 2 3 4 5 6 7 8 9 10<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


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ZthJC = f(t) IR = f(V R)<br>Tvj = 150°C<br>100 ——— er 3600 —__—_<br>ZthJC : Diode IR, Modul<br>H o Con #H— o Feet e CnTT 3000 [—| |<br>o n c<br>10 2400<br>TIMa AMIE UM tt [ NEL<br>Pt et<br>PT TT reTT<br>a a<br>1800<br>Ht et<br>FAUNA OGUTOTT SeaNaa<br>1 2A 1200 \<br>a<br>T_TPTaPT TTTTTETTT TTAyTTT 600 ey yp RNa<br>i:    1    2    3    4<br>ri[K/kW]:   2,414   6,266   2,787   1,509<br>τ i[s]:    0,002   0,036   0,252   5,587<br>0,1 0<br>0,001 0,01 0,1 1 10 0 500 1000 1500 2000 2500 3000 3500<br>t [s] VR [V]<br> [K/kW]thJC  [A]IR<br>Z<br>**----- End of picture text -----**<br>


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Technische�Information�/�Technical�Information<br>IGBT-ModuleIGBT-modules FZ1500R33HE3<br>Schaltplan�/�circuit_diagram_headline<br>Gehäuseabmessungen�/�package�outlines<br>prepared�by:�SB date�of�publication:�2013-12-11<br>approved�by:�DTS revision:�3.1<br>**----- End of picture text -----**<br>


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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>


## FZ1500R33HE3 

## **Nutzungsbedingungen** 

application. 

9 



## Links

- [View this product on Novapart](https://novapart.co/products/FZ1500R33HE3BPSA1/igbt-module-single-switch-15-ka-255-v-17-kw-150-c)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/fz1500r33he3bpsa1/transistor-igbt-module-3-3kv-1/dp/2726195)
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